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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This paper compares total dose effects on two different technology (CMOS and BiCMOS) 12-bit ADCs from the same manufacturer, Burr-Brown.
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.
Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias during exposure. All devices exhibited Enhanced Low Dose Rate Sensitivity (ELDRS). An accelerated ELDRS test method for three different devices demonstrate results similar to tests at low dose rate. Behavior and critical parameters from these tests are compared and discussed.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.
A series of total ionizing dose (TID) measurements were performed on commercial hard drives to explore the possible uses of the devices for the high radiation mission, and to help the understanding of the reliability of current hard drive technology. Three different models from three major manufacturers were tested with the aid of a commercial hard drive test system.
We present results of continuing efforts to evaluate total dose bias dependency and ELDRS effects in bipolar linear microcircuits. Several devices were evaluated, each exhibiting moderate to significant bias and/or dose rate dependency.
We now have considerable experience with successfully designing science systems to function properly, even during and after exposure to ionizing radiation approaching one Megarad, and during large solar particle events with substantial high Z fluxes such as the events that happened in August, 1972 and in the fall of 1989. Nevertheless, with changing device dimensions and properties, newer technologies and new applications, new problems arise. Some recent basic research has shed light on these problems and pointed the way to better diagnostic tests. In the case of single event upsets, clearly one cannot always accurately predict upset probabilities simply by knowing the quiescent Linear Energy Transfer (LET) threshold and the asymptotic cross-section of the device.
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We present results of continuing efforts to evaluate total dose bias dependency and ELDRS effects in bipolar linear microcircuits. Several devices were evaluated, each exhibiting moderate to significant bias and/or dose rate dependency.
This paper reports and analyzes recent single event effects (SEE) and total ionizing dose (TID) test results for the Analog Devices RH3845 synchronous current mode step-down controller. This device has been tested and evaluated for use in a harsh space radiation environment.
A microcomputer-based expert system is being developed at the Aerospace Corporation Space Sciences Laboratory to assist in the diagnosis of satellite anomalies caused by the space environment. The expert system is designed to address anomalies caused by surface charging, bulk charging, single event effects and total radiation dose. These effects depend on the orbit of the satellite, the local environment (which is highly variable), the satellite exposure time and the hardness of the circuits and components of the satellite. The expert system is a rule-based system that uses the Texas Instruments Personal Consultant Plus expert system shell. The completed expert system knowledge base will include 150 to 200 rules, as well as a spacecraft attributes database, an historical spacecraft anomalies database, and a space environment database which is updated in near real-time. Currently, the expert system is undergoing development and testing within the Aerospace Corporation Space Sciences Laboratory.
The use of bipolar linear devices is prevalent in most satellite and some space applications. However, degradation as a result of low dose irradiations known as ELDERS (effects of enhanced low dose rate sensitivity) is a major concern when selecting flight hardware. Many studies and reports have been conducted on this possible phenomenon as well as their responsible physical mechanisms.
Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.
Space poses a variety of radiation hazards. These hazards pose different risks for different missions depending on the mission environment, duration and requirements. This presentation presents a brief look at several radiation related hazards, including destructive and nondestructive Single-Event Effect, Total Ionizing Dose, Displacement Damage and Spacecraft Charging. The temporal and spatial characteristics for the environments of concern for each are considered.
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.
Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects described in section IVA. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses [Srou88a, Summ92, Hopk97] which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves.
The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.