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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
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NASA NTRS1990

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗
NASA NTRS1991

Laterally stacked Schottky diodes for infrared sensor applications

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Lin, True-Lon↗
NASA NTRS1991

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

Abdulaziz, Salman S.↗
NASA NTRS1990

Advanced CCD imager technology for use from 1 to 10,000 A

A low-noise, high-sensitivity charge-coupled-device (CCD) technology for imaging applications extending from the soft X-ray (1 A) to the near-infrared (10,000 A) regimes was developed together with a fabrication technology for making back-illuminated versions of these devices with quantum efficiencies as high as 90 percent from 5000 to 7000 A. The efforts have focused on two devices, a 64 x 64 pixel back-illuminated imager with two output ports that operates at 2000 frames per second with 23 electrons read noise, and a larger device, with 420 x 420 pixel format, designed for lower frame rates with noise as low as 1.5 electrons and used at visible, UV, and X-ray wavelengths. Applications to plasma diagnostics include Thomson scattering and high-frame-rate imaging in the visible, as well as X-ray imaging and bolometry.

Twichell, J. C.↗
NASA NTRS1990

Imaging MAMA detector systems

Imaging multianode microchannel array (MAMA) detector systems with 1024 x 1024 pixel formats have been produced for visible and UV wavelengths; the UV types employ 'solar blind' photocathodes whose detective quantum efficiencies are significantly higher than those of currently available CCDs operating at far-UV and EUV wavelengths. Attention is presently given to the configurations and performance capabilities of state-of-the-art MAMA detectors, with a view to the development requirements of the hybrid electronic circuits needed for forthcoming spacecraft-sensor applications. Gain, dark noise, uniformity, and dynamic range performance data are presented for the curved-channel 'chevron', 'Z-plate', and helical-channel high gain microchannel plate configurations that are currently under evaluation with MAMA detector systems.

Slater, David C.↗
NASA NTRS1991

An abuttable CCD imager for visible and X-ray focal plane arrays

A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.

Burke, Barry E.↗
NASA NTRS1991

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗
NASA NTRS1990

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗
NASA NTRS1990

Sensors for the Hubble Space Telescope wide field and planetary cameras (1 and 2)

The technology of the wide field planetary camera (WFPC-2) CCD technology is examined with reference to the WFPC-1 experience. Strategies are presented for elimination of quantum efficiency (QE) hysteresis and implementation of maintenance-free QE stability, improved far-UV performance, on-orbit photometric calibrations, refinements in CCD electronics, and anticipated CCD particle radiation effects. Absorption depth vs. wavelength in silicon and a cross section of the CCD membrane are shown.

Trauger, John T.↗
NASA NTRS1990

The use of CCDs in the Space Telescope Imaging Spectrograph (STIS)

The present study describes the STIS instrument concept and the role and requirements of the CCD detectors. Specific required properties and the current status of the efforts to meet them are discussed. The goals of the STIS team include studies of the origin and evolution of the solar system, star formation, variable stellar phenomena, the nature and energy balance of the interstellar and intergalactic medium, and the origin and evolution of galaxies and their nuclear activity. The STIS operating modes (spectral range, resolving power, effective area, and angular range) and the optical arrangement to accomplish them are presented. The detective quantum efficiency of several candidate detector types are shown as a function of wavelength for the four STIS bands. Difficulties that arise in the use of CCDs are discussed. Consideration is given to the requirements imposed on STIS CCDs and to their performance.

Woodgate, Bruce E.↗
NASA NTRS1990

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

NASA has been pursuing the development of high-speed fiber-optic transceivers for use in a number of space data system applications. Current efforts are directed toward a high-performance all-integrated-circuit transceiver operating up to the 3-5 Gb/s range. Details of the evaluation and selection of candidate high-speed optical sources to be used in the space-qualified high-performance transceiver are presented. Data on the performance of commercially available DFB (distributed feedback) lasers are presented, and their performance relative to each other and to their structural design with regard to their use in high-performance fiber-optic transceivers is discussed. The DFB lasers were obtained from seven commercial manufacturers. The data taken on each laser included threshold current, differential quantum efficiency, CW side mode suppression radio, wavelength temperature coefficient, threshold temperature coefficient, natural linewidth, and far field pattern. It was found that laser diodes with buried heterostructures and first-order gratings had, in general, the best CW operating characteristics. The modulated characteristics of the DFB laser diodes are emphasized. Modulated linewidth, modulated side mode suppression ratio, and frequency response are discussed.

Cook, Anthony L.↗
NASA NTRS1992

Open-Pinned-Phase Charge-Coupled Device

Acceptable quantum efficiency obtained without back illumination and back-side thinning. NEW CCD technology referred to as "open-pinned-phase" (OPP) invented to unite best attributes of multiphase and virtual-phase technologies. Delivers high front-side sensitivity in conjunction with ultralow-signal-level performance.

Janesick, James R.↗
NASA NTRS1992

Reflections From Plasma Would Enhance Infrared Detector

Quantum efficiency of proposed photoemission semiconductor detector of long-wavelength infrared radiation enhanced by multiple passes of radiation. Device has features of back-to-back heterojunction internal-photoemission (HIP) detector, and Fabry-Perot interferometer. Arrays of devices of this type incorporated into integrated-circuit infrared imaging devices.

Maserjian, Joseph↗
NASA NTRS1991

Operation of the University of Hawaii 2.2M telescope on Mauna Kea

NASA's planetary astronomy program provides part of the funding for the 2.2 meter telescope. The parameters for time on the telescope are laid out. A major instrumental highlight has been the commissioning of a 256 x 256 near infrared camera which uses a Rockwell NICMOS-3 array. At the f/10 focus, image scales of 0.37 and 0.75 arcsec/pixel are available. A new, high quantum efficiency Tektronix 1024 x 1024 CCD saw first light on the telescope in 1991, and was available regularly from April 1991. Data from both of these detectors are transmitted directly to the Sun workstation for immediate analysis by the observers. The autoguider software was enhanced to permit guided tracking on objects have nonsideral motions (i.e., solar system objects).

Hall, Donald N. B.↗
NASA NTRS1990

Solar x ray astronomy rocket program

The dynamics were studied of the solar corona through the imaging of large scale coronal structures with AS&E High Resolution Soft X ray Imaging Solar Sounding Rocket Payload. The proposal for this program outlined a plan of research based on the construction of a high sensitivity X ray telescope from the optical and electronic components of the previous flight of this payload (36.038CS). Specifically, the X ray sensitive CCD camera was to be placed in the prime focus of the grazing incidence X ray mirror. The improved quantum efficiency of the CCD detector (over the film which had previously been used) allows quantitative measurements of temperature and emission measure in regions of low x ray emission such as helmet streamers beyond 1.2 solar radii or coronal holes. Furthermore, the improved sensitivity of the CCD allows short exposures of bright objects to study unexplored temporal regimes of active region loop evolution.

Source record↗
NASA NTRS1992

Receiver performance of laser ranging measurements between the Lunar Observer and a subsatellite for lunar gravity studies

The optimal receiver for a direct detection laser ranging system for slow Doppler frequency shift measurement is shown to consist of a phase tracking loop which can be implemented approximately as a phase lock loop with a 2nd or 3rd order loop filter. The laser transmitter consists of an AlGaAs laser diode at a wavelength of about 800 nm and is intensity modulated by a sinewave. The receiver performance is shown to be limited mainly by the preamplifier thermal noise when a silicon avalanche photodiode is used. A high speed microchannel plate photomultiplier tube is shown to outperform a silicon APD despite its relatively low quantum efficiency at wavelengths near 800 nm. The maximum range between the Lunar Observer and the subsatellite for lunar gravity studies is shown to be about 620 km when using a state-of-the-art silicon APD and about 1000 km when using a microchannel plate photomultiplier tube in order to achieve a relative velocity measurement accuracy of 1 millimeter per second. Other parameters such as the receiver time base jitter and drift also limit performance and have to be considered in the design of an actual system.

Davidson, Frederic M.↗
NASA NTRS1992

An ultra-sensitive coherent detector capable of single photon detection for lidar applications

The properties of Ultra-Sensitive Coherent Detectors (USCD's) are nearly that of an ideal detector for lidar applications. Recent progress in the development of USCD's is briefly reviewed, and its imaging capability is demonstrated. These new detectors possess properties with significant improvements over conventional technology. These improvements include a high quantum efficiency of 0.95, gain in excess of 10 exp 13, a narrow bandwidth of 180-300 MHz at 1 micron, imaging capability, and phase conjugation ability. We have constructed a USCD using two Nd:YAG laser amplifiers and a four-wave Brillouin mirror (FWBM) using SnCl4 as the Brillouin medium. Using a 10 Hz repetitively-pulsed single frequency laser, we have shown that the Brillouin medium is free from thermal blooming and from optical breakdown.

Amimoto, Sherwin↗