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NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗

NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗

NASA NTRS1991

Flexible fluoropolymer filled protective coatings

Metal oxide films such as SiO2 are known to provide an effective barrier to the transport of moisture as well as gaseous species through polymeric films. Such thin film coatings have a tendency to crack upon flexure of the polymeric substrate. Sputter co-deposition of SiO2 with 4 to 15 percent fluoropolymers was demonstrated to produce thin films with glass-like barrier properties that have significant increases in strain to failure over pure glass films which improves their tolerance to flexure on polymeric substrates. Deposition techniques capable of producing these films on polymeric substrates are suitable for durable food packaging and oxidation/corrosion protection applications.

Banks, Bruce A.↗

NASA NTRS1990

Design of a lunar oxygen production plant

To achieve permanent human presence and activity on the moon, oxygen is required for both life support and propulsion. Lunar oxygen production using resources existing on the moon will reduce or eliminate the need to transport liquid oxygen from earth. In addition, the co-products of oxygen production will provide metals, structural ceramics, and other volatile compounds. This will enable development of even greater self-sufficiency as the lunar outpost evolves. Ilmenite is the most abundant metal-oxide mineral in the lunar regolith. A process involving the reaction of ilmenite with hydrogen at 1000 C to produce water, followed by the electrolysis of this water to provide oxygen and recycle the hydrogen has been explored. The objective of this 1990 Summer Faculty Project was to design a lunar oxygen-production plant to provide 5 metric tons of liquid oxygen per year from lunar soil. The results of this study describe the size and mass of the equipment, the power needs, feedstock quantity and the engineering details of the plant.

Radhakrishnan, Ramalingam↗

NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗

NASA NTRS1990

Lead-ruthenium pyrochlores as oxygen electrocatalysts

An investigation of lead-ruthenium pyrochlores of the structure Pb2(Ru/2-x/Pb/x/) O7-y for use as oxygen electrocatalysts in alkaline media is discussed. Lead-ruthenium pyrochlore mixed metal oxides were prepared and characterized by X-ray diffraction, BET surface area, dry powder conductivity, and chemical stability. Gas diffusion electrodes were developed specifically for the lead-ruthenium pyrochlore materials. Also investigated were the effects of varying electrode fabrication parameters on the oxygen reduction performance of the lead-ruthenium pyrochlore electrocatalyst. Long-term stability performance was also evaluated. The oxygen reduction performance of the pyrochlore electrocatalyst is considerably higher than that of the state-of-the-art gold-platinum alloy electrocatalyst currently used by NASA. Furthermore, the pyrochlore electrocatalysts are attractive candidates for high-performance pressurized alkaline fuel cells.

Anderson, E. B.↗

NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗

NASA NTRS1991

Tridymite and maghemite formation in an Fe-SiO smoke

Grains produced in porous Fe-SiO smoke are analyzed by means of electron microscopy to determine their crystallographical, morphological, and chemical properties. The nucleation of metal oxide condensates takes place as the vapor evolves in a condensation-flow apparatus, initially producing simple crystalline phases. Fe nucleation follows, and the subsequent heterogeneous nucleation of quenched mixed high-Fe silica grains exhibits associated Fe-depletion, eventually producing pure silica grains. The coalescence exhibited by the pure silica grains is compatible with the higher surface energy found in the pure silica phase. During coagulation the grains melt and anneal to a chemically pure mixture of alpha- and beta-tridymite, and the precipitation of amorphous silica material is observed. The settling of grains in evolving solar nebula is theorized to be related to the stickiness of this material, and maghemite is suggested to contribute to the Fe/Si fractionation in solar nebula.

Rietmeijer, F. J. M.↗

NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗

NASA NTRS1992

FET's Perform Well At Cryogenic Temperatures

New metal-oxide-semiconductor field-effect transistors designed for source-follower preamplifiers operating at liquid-helium temperatures in conjunction with infrared detectors. Lower thresholds and offset give CryoFET's greater dynamic range and linearity than conventional MOSFET's at low temperatures and facilitates pair balancing to reduce offsets in output. Reduces heat loading of cryogenic system, extending life, reliability, and performance of cryogenic infrared instruments.

Sclar, N.↗

NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Johnson, R. Wayne↗

NASA NTRS1990

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's).

Buehler, M. G.↗

NASA NTRS1992

Catalysts for ultrahigh current density oxygen cathodes for space fuel cell applications

The objective was to identify promising electrocatalyst/support systems for oxygen cathodes capable of operating at ultrahigh current densities in alkaline fuel cells. Such cells will require operation at relatively high temperatures and O2 pressures. A number of materials were prepared, including Pb-Ru and Pb-Ir pyrochlores, RuO2 and Pt-doped RuO2, lithiated NiO and La-Ni perovskites. Several of these materials were prepared using techniques that had not been previously used to prepare them. Particularly interesting was the use of the alkaline solution technique to prepare Pt-doped and Pb-Ru pyrochlores in high area form. Also interesting was the use of the fusion (melt) method for preparing the Pb-Ru pyrochlore. Several of the materials were also deposited with platinum. Well-crystallized Pb2Ru2O(7-y) was used to fabricate very high performance O2 cathodes with good stability in room temperature KOH. This material was also found to be stable over a useful potential range at approx. 140 C in concentrated KOH. For some of the samples, fabrication of the gas-fed electrodes could not be fully optimized during this project period. Future work may be directed at this problem. Pyrochlores that were not well-crystallized were found to be unstable in alkaline solution. Very good O2 reduction performance and stability were observed with Pb2RuO(7-y) in a carbon-based gas-fed electrode with an anion-conducting membrane placed on the electrolyte side of the electrode. The performance came within a factor of about two of that observed without carbon. High area platinum and gold supported on several conductive metal oxide supports were examined. Only small improvements in O2 reduction performance at room temperature were observed for Pb2Ru2O(7-y) as a support because of the high intrinsic activity of the pyrochlore. In contrast, a large improvement was observed for Li-doped NiO as a support for Pt. Very poor performance was observed for Au deposited on Li-NiO at approx. 150 C. Nearly reversible behavior was observed for the O2/OH(-) couple for Li-doped NiO at approx. 200 C. The temperature dependence for the O2 reduction was examined.

Tryk, Donald A.↗

NASA NTRS1991

Laser surface interaction of high-Tc superconductors

During the past two years, one of the most exciting research fields in science has been the study of the newly discovered high-T(sub c) metal oxide superconductors. Although many theoretical models were proposed, there is no general agreement on any theory to explain these materials. One of the peculiar features of these high-T(sub c) materials is the noninteger number of oxygen atoms. The oxygen content is extremely critical to the superconductive properties. Take YBa2Cu3O(7-x) as an example. Its superconductive properties disappear whenever x is larger than 0.5. The existence of Cu(+ 3) was considered to account for x less than 0.5. However, results from mass spectroscopy of laser desorbed species indicate that significant quantities of oxygen molecules are trapped in the bulk of these high-T(sub c) superconductors. It appears that these trapped oxygen molecules may play key roles in superconductive properties. Preparation of superconductive thin films are considered very important for the applications of these new superconductors for the electronics industry. Fluorescence spectra and ion spectra following laser ablation of high-temperature superconductors were obtained. A real time monitor for preparation of superconductive thin films can possibly be developed.

Chen, C. H.↗

NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗

NASA NTRS1992

Elemental analyses of hypervelocity micro-particle impact sites on interplanetary dust experiment sensor surfaces

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity micro-particles that struck the active sensors with enough energy to breakdown the 0.4 to 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. These discharge features, which include 50 micron diameter areas where the aluminum top layer has been vaporized, facilitate the location of the impacts. The high purity Al-SiO2-Si substrates allow detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) is used to create two-dimensional elemental ion intensity maps of micro-particle impact sites on the IDE sensors. The element intensities in the central craters of the impacts are corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results are used to classify the particles' origins as 'manmade', 'natural' or 'indeterminate'. The last classification results from the presence of too little impactor residue (a frequent occurrence on leading edge impacts), analytical interference from high background contamination, the lack of information on silicon residue, the limited usefulness of data on aluminum in the central craters, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. A total of 35 impacts on leading edge sensors and 22 impacts on trailing edge sensors were analyzed.

Simon, Charles G.↗

NASA NTRS1992

Spectral identification of chemisorbed CO2 and application to Mars analog materials

The goal of this work is to identify the spectral signature of chemisorbed CO2, to test the efficacy of carbonate formation on Mars-analog materials via CO2 chemisorption, and to identify the surface-chemical characteristics of good chemisorbents, with the intent of assessing the possible geochemical importance of CO2 chemisorption as a quasipermanent CO2 sink in the Martian environment. Our approach is to search for infrared spectral bands that result from chemisorption of CO2 molecules onto chemical reagents and Mars-analog materials, and to identify the salient differences in adsorbents that favor strong, permanent CO2 chemisorption. The total amount of CO2 in the early Martian atmosphere, and consequent surface temperatures, are unknown. A CO2 greenhouse may not have been an adequate mechanism under any circumstances; however, it if were, then most of that CO2 must still be in the near-surface environment; no escape mechanism that could remove it after the decline of channeling has been identified. The only plausible reservoir is carbonate, and there are various remote sensing techniques that can be used to search for it. We are investigating CO2 chemisorption as a permanent CO2 sink, and to aid in interpretation of remotely sensed IR spectra of Mars. A common effect reported in CO2 adsorption studies is the formation of a layer of carbonate or bicarbonate anions on adsorbents that have OH- groups available on their surfaces. Inorganic hydroxyls occur on phyllosilicates, amorphous silicates, metal oxides and hydroxides; it is the most abundant and reactive surface functional group on the surfaces of terrestrial silicates. The process responsible for the reaction is chemisorption. Chemisorption is distinguished from physical adsorption in that there is a transfer of electrons between species, and the formation of a chemical bond. The heat of chemisorption is typically of the same order as heats of chemical reaction (i.e., a few hundred to a few thousand kJ/mole), as opposed to heats of physical adsorption (a few kJ per mole). Chemisorption is an activated process that is promoted by an increase in temperature - quite the opposite of physical adsorption. Chemisorption is not reversible in the sense that physical adsorption is.

Zent, A. P.↗

NASA NTRS1991

Space Station Furnace Facility - A multipurpose, high temperature microgravity research facility

This paper describes the Space Station Furnace Facility (SSFF) program. The SSFF is a new development intended to provide an advanced facility for materials research in the microgravity environment of the Space Station. The SSFF will be designed for research in metals, oxides, glasses, and alloy solidification and crystal growth of electronic and electrooptical materials. The facility will be designed to process multiple samples in one or more furnaces in an automated mode. The SSFF will be built around a general facility core which will provide common support functions not provided by the Space Station, subsystems which could best be centralized, and common subsystems which could be distributed with each experiment module. The SSFF will be capable of operation in both the manned and unmanned mode and is scheduled for early deployment aboard the Space Station.

Kirkindall, Arthur S.↗