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At least 667 records · Page 37

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NASA NTRS1988

Interfacial adhesion: Theory and experiment

Adhesion, the binding of different materials at an interface, is of general interest to many branches of technology, e.g., microelectronics, tribology, manufacturing, construction, etc. However, there is a lack of fundamental understanding of such diverse interfaces. In addition, experimental techniques generally have practical objectives, such as the achievement of sufficient strength to sustain mechanical or thermal effects and/or have the proper electronic properties. In addition, the theoretical description of binding at interfaces is quite limited, and a proper data base for such theoretical analysis does not exist. This presentation will review both experimental and theoretical aspects of adhesion in nonpolymer materials. The objective will be to delineate the critical parameters needed, governing adhesion testing along with an outline of testing objectives. A distinction will be made between practical and fundamental objectives. Examples are given where interfacial bonding may govern experimental consideration. The present status of theory is presented along wiith recommendations for future progress and needs.

Ferrante, John↗

NASA NTRS1988

Optical waveguides in oxygen-implanted buried-oxide silicon-on-insulator structures

An analysis is made of the waveguiding properties of the oxygen-implanted, buried-oxide, silicon-on-insulator structures currently being developed for use in microelectronics. It is found that in spite of the fact that the buried-oxide layer is only a few tenths of a micrometer thick, the single-crystal overlayer can support TEo guided-wave propagation, at subbandgap wavelengths, with losses due to substrate radiation leakage at or below the benchmark level of 1 dB/cm.

Kurdi, B. N.↗

NASA NTRS1988

Microwave and millimeter-wave resonant-tunneling devices

Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.

Sollner, T. C. L. Gerhard↗

NASA NTRS1988

A molecular shift register based on electron transfer

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Hopfield, J. J.↗

NASA NTRS1988

Commercial aspects of epitaxial thin film growth in outer space

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Ignatiev, Alex↗

NASA NTRS1989

Molecular-Beam Epitaxy Of CrSi2 on Si(111)

Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.

Fathauer, Robert W.↗

NASA NTRS1987

Robot design for a vacuum environment

The cleanliness requirements for many processing and manufacturing tasks are becoming ever stricter, resulting in a greater interest in the vacuum environment. Researchers discuss the importance of this special environment, and the development of robots which are physically and functionally suited to vacuum processing tasks. Work is in progress at the Center for robotic Systems in Microelectronics (CRSM) to provide a robot for the manufacture of a revolutionary new gyroscope in high vacuum. The need for vacuum in this and other processes is discussed as well as the requirements for a vacuum-compatible robot. Finally, researchers present details on work done at the CRSM to modify an existing clean-room compatible robot for use at high vacuum.

Belinski, S.↗

NASA NTRS1988

Interplanetary Particle Environment. Proceedings of a Conference

A workshop entitled the Interplanetary Charged Particle Environment was held at the Jet Propulsion Laboratory (JPL) on March 16 and 17, 1987. The purpose of the Workshop was to define the environment that will be seen by spacecraft operating in the 1990s. It focused on those particles that are involved in single event upset, latch-up, total dose and displacement damage in spacecraft microelectronic parts. Several problems specific to Magellan were also discussed because of the sensitivity of some electronic parts to single-event phenomena. Scientists and engineers representing over a dozen institutions took part in the meeting. The workshop consisted of two major activities, reviews of the current state of knowledge and the formation of working groups and the drafting of their reports.

Feynman, Joan↗

NASA NTRS1988

Current models of the intensely ionizing particle environment in space

The Cosmic Ray Effects on MicroElectronics (CREME) model that is currently in use to estimate single event effect rates in spacecraft is described. The CREME model provides a description of the radiation environment in interplanetary space near the orbit of the earth that contains no major deficiencies. The accuracy of the galactic cosmic ray model is limited by the uncertainties in solar modulation. The model for solar energetic particles could be improved by making use of all the data that has been collected on solar energetic particle events. There remain major uncertainties about the environment within the earth's magnetosphere, because of the uncertainties over the charge states of the heavy ions in the anomalous component and solar flares, and because of trapped heavy ions. The present CREME model is valid only at 1 AU, but it could be extended to other parts of the heliosphere. There is considerable data on the radiation environment from 0.2 to 35 AU in the ecliptic plane. This data could be used to extend the CREME model.

Adams, James H., Jr.↗

NASA NTRS1988

Coffee-can-sized spacecraft

The current status and potential scientific applications of intelligent 1-5-kg projectiles being developed by SDIO and DARPA for military missions are discussed. The importance of advanced microelectronics for such small spacecraft is stressed, and it is pointed out that both chemical rockets and EM launchers are currently under consideration for these lightweight exoatmospheric projectiles (LEAPs). Long-duration power supply is identified as the primary technological change required if LEAPs are to be used for interplanetary scientific missions, and the design concept of a solar-powered space-based railgun to accelerate LEAPs on such missions is considered.

Jones, Ross M.↗

NASA NTRS1987

Fast and stable recursive algorithms for continuous-time and discrete-time model conversions

Based on the Newton-Raphson method, this paper presents recursive algorithms that are rapidly convergent and more stable for modeling the equivalent continuous-time (discrete-time) model from the available discrete-time (continuous-time) model for a fixed sampling period. The newly developed recursive algorithms relax the constraints imposed upon the existing model conversion algorithms, and, thus, enhance the applications of microprocessors and associated microelectronics to digital control systems. A practical example is presented to demonstrate the effectiveness of the proposed procedures.

Shieh, L. S.↗

NASA NTRS1988

Interfacial adhesion - Theory and experiment

Ferrante, John↗

NASA NTRS1988

The scratch test - Different critical load determination techniques

Different critical load determination techniques such as microscopy, acoustic emission, normal, tangential, and lateral forces used for scratch test evaluation of complex or multilayer coatings are investigated. The applicability of the scratch test to newly developed coating techniques, systems, and applications is discussed. Among the methods based on the use of a physical measurement, acoustic emission detection is the most effective. The dynamics ratio between the signals below and above the critical load for the acoustic emission (much greater than 100) is well above that obtained with the normal, tangential, and lateral forces. The present commercial instruments are limited in load application performance. A scratch tester able to apply accurate loads as low as 0.01 N would probably overcome most of the actual limitations and would be expected to extend the scratch testing technique to different application fields such as optics and microelectronics.

Sekler, J.↗

NASA NTRS1990

Calculating Second-Order Effects in MOSFET's

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Benumof, Reuben↗

NASA NTRS1989

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗

NASA NTRS1989

NASA spinoffs to bioengineering and medicine

The societal and economic benefits derived from the application of aerospace technology to improved health care are examined, and examples of the space-technology spinoffs are presented. Special attention is given to the applications of aerospace technology from digital image processing, space medicine and biology, microelectronics, optics and electrooptics, and ultrasonic imaging. The role of the NASA Technology Application Team in helping the potential technology users to identify and evaluate the technology transfer opportunities and to apply space technology in the field of medicine is discussed.

Rouse, Doris J.↗

NASA NTRS1991

Low-Thermal-Conduction Links For Silicon Sensors

Simple method of texturing surface of silicon reduces thermal conductivities of links in silicon x-ray calorimeters and infrared bolometers. Gives links high density of phonon scattering sites reducing conduction of heat. Links made shorter and more robust. Used in making x-ray calorimeters and infrared bolometers. Applicable to any microelectronic device in which high degree of thermal isolation needed.

Mott, D. Brent↗

NASA NTRS1991

Deposition Of Diamondlike Films By ECR Microwave Plasma

Hard, amorphous hydrogenated carbon films of diamondlike quality deposited at room temperature on silicon, optical glass, and quartz through decomposition of CH4 in electron-cyclotron-resonance (ECR) microwave plasma of CH4 diluted with H2. Technique provides hard, abrasion-resistant coatings for lenses and other optical components. Films chemically inert and posses high electrical resistivity and breakdown fields, valuable properties in microelectronics applications.

Pool, Frederick S.↗