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At least 73 records · Page 4

Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

dielectric properties↗

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗

Porosity evolution during heating of copper made from powder by friction extrusion

Here, friction extrusion was used to compact and extrude solid copper rod from feedstock powders. Following extrusion, considerable porosity was observed throughout the extrudate cross section due to the entrained porosity in the feedstock material and the extrusion process. The thermal stability of the extrudate was investigated via a series of heat treatments. Porosity evolution exhibited three distinct stages—an unchanged plateau (0°C–300°C) followed by an abrupt increase (400°C–500°C) and ultimately a reduction, as the temperature increases (>500°C). The peak porosity measured was ~25%. The underlying driving force for pore evolution is described as the competition between the internal pore pressure, material strength, and sintering kinetics, as a function of temperature. The observed porosity evolution and driving force are not expected to be limited to copper. Thus, this manuscript reveals an important consideration regarding elevated-temperature thermal stability as advanced manufacturing methods involving direct powder extrusion are explored.

36 MATERIALS SCIENCE↗

Evaluation and selection of eutectic salts combined with metal foams for applications in high-temperature latent heat thermal energy storage

This study presents a systematic process for selecting eutectic salts for use in latent heat thermal energy storage (LHTES), and provides experimental evidence regarding their performance. One primary goal was to identify the most suitable eutectic salt for use with metallic foams over a temperature range of 450 °C–500 °C. Twenty-one eutectic salts were preselected for comparison. Here, the performance and cost-effectiveness of each were evaluated based on the Ragone relation, enabling a fair comparison of each salt's heat storage capacity and power density relative to cost. As a result, MgCl-NaCl, CaCl 2 -NaCl, and FLiNaK were selected as the most promising candidates. Subsequently, experiments were performed to demonstrate the compatibility of the selected salts with metal foams while the copper and aluminum foams were immersed in the salts at 550 °C for 120 h. Combining C10100 (copper alloy) foam with CaCl 2 -NaCl was observed to generate the least surface corrosion due to oxidation. The charge/discharge performance and thermal stability of CaCl 2 -NaCl, both with and without the copper foam, were also tested to confirm the feasibility of this combination. The capsule with the copper foam showed enhanced performance (a 13 % reduced discharge rate) in comparison to the capsule without copper foam. The melting point of the CaCl 2 -NaCl remained unchanged for 300-h duration of the cyclic melting/solidification experiments, and no thermal stability issues were observed.

25 ENERGY STORAGE↗

Impact of titanium content on the thermo-mechanical and oxidation response of TiAlTa

This study aimed to analyze how the addition of titanium (Ti) to TiAlTa alloys affects their mechanical properties (Young’s modulus and hardness) and oxidation behavior. Alloys with three different Ti additions and equi-atomic Al and Ta were fabricated with nominal compositions of 33Ti-33Al-33Ta at%, 50Ti-25Al-25Ta at%, and 70Ti-15Al-15Ta at%. Phase identification of as-processed and compositionally homogenized alloys was conducted by coupling various electron microscopy, diffraction, and chemical analysis techniques. Composition and structures were modeled using CALPHAD-based phase predictions and compared with experimental results. Each of the alloys exhibited a unique set of microstructures with distinctly different ordered precipitates, dependent on cooling rate and chemical composition. Subsequently, nanoindentation tests were performed at temperatures of 25°C, 250°C, 500°C, and 750°C. Oxidation studies were conducted under static air at 750°C for up to 200 h. 33Ti-33Al-33Ta at% and 70Ti-15Al-15Ta at% alloys showed higher hardness and modulus than 50Ti-25Al-25Ta at% at room temperature. The 50Ti-25Al-25Ta at% alloy exhibited higher hardness and modulus values but lower oxidation resistance at 750°C when compared with the other specimens. The X-ray photoelectron spectroscopy experiments were conducted to further analyze the oxides present in the samples. Despite each sample displaying combinations of mixed oxide layers, TiO 2 was the preferred oxide forming in the 50Ti-25Al-25Ta composition, while the other samples preferred to form Al 2 O 3 . In conclusion, the findings from this systematic exploration of phase evolution in the TiAlTa alloy space provide insights for optimized material chemistries, processing, and properties.

36 MATERIALS SCIENCE↗

Irradiation damage concurrent challenges with RAFM and ODS steels for fusion reactor first-wall/blanket: a review

Reduced activation ferritic martensitic (RAFM) and oxide dispersion strengthened (ODS) steels are the most promising candidates for fusion first-wall/blanket (FW/B) structures. The performance of these steels will deteriorate during service due to neutron damage and transmutation-induced gases, such as helium/hydrogen, at elevated operating temperatures. Here, after highlighting the operating conditions of fusion reactor concepts and a brief overview, the main irradiation-induced degradation challenges associated with RAFM/ODS steels are discussed. Their long-term degradation scenarios such as (a) low-temperature hardening embrittlement (LTHE)—including dose-temperature dependent yield stress, tensile elongations, necking ductility, test temperature effect on hardening, Charpy impact ductile-to-brittle transition temperature and fracture toughness, (b) intermediate temperature cavity swelling, (c) the effect of helium on LTHE and cavity swelling, (d) irradiation creep and (e) tritium management issues are reviewed. The potential causes of LTHE are discussed, which highlights the need for advanced characterisation techniques. The mechanical properties, including the tensile/Charpy impact of RAFM and ODS steels, are compared to show that the current generation of ODS steels also suffers from LTHE, and shows irradiation hardening up to high temperatures of ~400 °C–500 °C. To minimise this, future ODS steel development for FW/B-specific application should target materials with a lower Cr concentration (to minimise α'), and minimise other elements that could form embrittling phases under irradiation. RAFM steel-designing activities targeting improvements in creep and LTHE are reviewed. The need to better understand the synergistic effects of helium on the thermo-mechanical properties in the entire temperature range of FW/B is highlighted. Because fusion operating conditions will be complex, including stresses due to the magnetic field, primary loads like coolant pressure, secondary loads from thermal gradients, and due to spatial variation in damage levels and gas production rates, an experimentally validated multiscale modelling approach is suggested as a pathway to future reactor component designing such as for the fusion neutron science facility.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Investigation of the hydrochlorination of SiCl4

The hyrochlorination of SiC14 and m.g. silicon metal to produce SiHC13, was investigated. Reaction kinetic measurements were carried out to collect additional rate data at 525 C and 550 C. A theoretical study was carried out to provide a kinetic model and a rate equation for the hydrochlorination reaction. Results of this preliminary study show that the rate of formation of SiHC13 follows a pseudo first order kinetics. The rate constants were measured at three temperatures, 550 C, 500 C and 450 C, respectively. The activation energy was determined from the Arrhenius plot to give a value of 13.2 Kcal/mole. The design of a quartz reactor to measure reaction rates and equilibrium conversion of SiHC13 at reaction temperature up to 650 C was completed.

Mui, J. Y. P.↗

Release of noble gases and nitrogen from grain-surface sites in lunar ilmenite by closed-system oxidation

Noble gases and nitrogen were extracted from a 100 to 150 microns ilmenite separate from lunar soil 71501 by closed system stepped heating in approx. 10 torr O2 at 300 C, 400 C, 500 C, 600 C and 630 C, followed by stepped pyrolysis at ten temperatures between 680 C and approx. 1500 C. The five oxidation steps together liberated approx. 65% of the total He-4, 45% of the Ne-20, 23% of the N-14 and Ar-36, 12% of the Kr-84 and 8% of the Xe-132 in the sample; Ne-20/Ar-36 and Ne-20/Ne-22 ratios agree with the solar wind composition experiment, and Kr-84/Ar-36 and Xe-132/Ar-36 are within approx. 10% of Cameron's estimates for the sun and solar wind. The remaining gases, released above 630 C by pyrolysis, are strongly fractionated with respect to the SWC-Cameron solar wind elemental composition. Large concentrations of fractionated noble gases in grain interiors, their virtual absence in the relatively unfractionated surface gas reservoir, and the high N/noble gas ratio all imply that most of the solar wind noble gases initially implanted in grain surfaces are eventually lost by diffusion. Loss limits can be estimated by considering two given scenarios. It is concluded tat approx. 70 to 97% or more of the Ar implanted in 71501 ilmenite grains has diffusively escaped.

Frick, U.↗

Organic Carbon Concentrations in 3-Billion-Year-Old Lacustrine Mudstones of Mars

Understanding the inventory of carbon on Mars is relevant to the question of whether Mars was ever habitable. While the Mars atmosphere represents a large reservoir of carbon, in situ pyrolysis performed on Mars and meteorite analyses indicate that another significant reservoir of carbon is the rocks themselves. Complex organic carbon was discovered in 3.5 Ga mudstones sampled at Cumberland (CB) in the Yellowknife Bay Formation in Gale Crater by the Sample Analysis at Mars (SAM) instrument suite on the Mars Science Laboratory (MSL) using a thermal decomposition technique called evolved gas analysis (EGA). Other simple organics have also been detected in these same CB materials. Low temperature co-evolution of CO and CO2 (~200°C – 500°C) has been detected in many samples from Gale Crater where SAM EGA has been performed, and potential sources include combustion of terrestrial organics from SAM, as well as combustion and/or decarboxylation of either indigenous martian or exogenous organic carbon.

J. C. Stern↗

Graphene as reusable substrate for bialkali photocathodes

Bialkali photocathodes, such as cesium potassium antimonide (CsK 2 Sb), can generate a high-brightness electron beam using a high-power green laser. These photocathode materials have potential applications in advanced accelerators and electron microscopes. It is known that the quantum efficiency (QE) of these photocathodes is affected severely by their substrates; however, reusability of the substrates is not well known. Here, we use graphene, silicon (Si), and molybdenum (Mo) substrates to evaluate the effects of substrates on the QE of redeposited CsK 2 Sb photocathodes after thermal cleanings. We found the QE of CsK 2 Sb photocathodes redeposited on a graphene substrate after a thermal cleaning at 500 °C remained largely unchanged. On the other hand, the QE of redeposited photocathodes on Si and Mo substrates after thermal cleaning at the same temperature decreased drastically. We used X-ray photoelectron spectroscopy (XPS) to quantitatively evaluate the residues of photocathodes after thermal cleaning at 400 °C and 500 °C. We found that the Sb, K, and Cs are removed by thermal cleaning at 500 °C for the graphene substrate, but all or the majority of these elements remained on the Si and Mo substrates. The results were consistent with our density functional theory (DFT) calculations for the case of Si, which we investigated. Furthermore, our angle-resolved photoemission spectroscopy (ARPES) on graphene indicated that its intrinsic electronic structure is preserved after photocathode deposition and thermal cleaning at 500 °C. Hence, we attributed the difference in amount of photocathode residue to the unique dangling-bond- free surface of inert graphene. Our results provide a foundation for graphene-based reusable substrates for high-QE semiconductor photocathodes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Phase Transformation and Water Adsorption Behavior of As‐Deposited and Annealed Ru Metal Thin Films Prepared by Atomic Layer Deposition

ABSTRACT Surfaces play a central role in catalytic processes, and understanding the transformation of ruthenium metal into ruthenium oxide during annealing is essential for tailoring functional catalytic interfaces. In this study, we systematically investigate ≈22 nm thick Ru metal films deposited by atomic layer deposition (ALD) at 300°C, focusing on their chemical composition, structural evolution, and surface hydration behavior following post‐deposition annealing in air from 400 to 600°C. Lab‐based and synchrotron X‐ray photoelectron spectroscopy (XPS) reveal a gradual conversion from metallic Ru to fully oxidized Ru 4+ with increasing annealing temperature, accompanied by a corresponding increase in lattice oxygen. X‐ray diffraction (XRD) shows amorphous Ru oxide phases at 400°C and 500°C that evolve into crystalline RuO 2 at 600°C, while atomic force microscopy (AFM) indicates enhanced grain growth and surface roughening upon annealing. Ambient‐pressure XPS (AP‐XPS) under controlled H 2 O vapor environments (1–17 Torr) demonstrates that samples annealed at 400°C and 500°C exhibit initially high hydroxyl coverage that decreases with increasing water vapor pressure, concurrent with a rise in molecular H 2 O adsorption. In contrast, the crystalline RuO 2 surface formed at 600°C maintains stable hydroxylation and supports increased water uptake. Overall, this work provides fundamental insight into Ru oxide–H 2 O interactions and establishes design principles for engineering oxide surfaces optimized for electrocatalytic applications.

APXPS↗

Lowering oxygen evolution overpotential via morphology control of NiO x nanocatalysts

NiO x nanocatalysts with two distinct morphologies, nano-spindles and nano-plates, were synthesized and evaluated for oxygen evolution reaction (OER) performance. Spindle-like NiO x was prepared via a hydrothermal reaction of nickel nitrate and urea with cetyltrimethylammonium bromide as a surfactant at 120 °C for 24 h, forming Ni(OH) 2 -based intermediates that were subsequently calcined at 300 °C for 3 h. In contrast, platelet-like Ni(OH) 2 nanocrystals were obtained using nickel(II) acetate and KOH at 180 °C for 24 h, followed by calcination at 400 °C or 500 °C for 4 h to yield NiO x nano-plates. The NiO x nano-spindles exhibited an OER overpotential of 395 mV at 10 mA/cm 2 , whereas the NiO x nano-plates annealed at 400 °C and 500 °C showed overpotentials of 565 mV and 474 mV at 10 mA/cm 2 , respectively. Structural characterization and X-ray photoemission spectroscopy indicate these differences arise from morphology-dependent surface structures that govern catalytic activity.

36 MATERIALS SCIENCE↗

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗

Nanoscale serration characteristics of additively manufactured superalloys

Structural elements made of nickel-based superalloys usually operate at high temperatures. Many surface failure mechanisms such as creep, fatigue, fretting fatigue, corrosion, and stress corrosion cracking start from the surface. Thus, studying the surface mechanical properties and deformation behavior of materials is vital in order to draw a correlation between the surface properties and failures. Herein, a nanoindentation technique was implemented to characterize surface properties of a widely used additively manufactured (AM) superalloy, i.e., Inconel 625. The specimens were tested in a range of temperatures in a vacuum chamber. Serrated plastic flow characterized by pop-in events during nanoindentation, known as Portevin-Le Chatelier (PLC) effect, was observed in all three tested elevated temperatures. This phenomenon depicts itself as bursts of plasticity in the loading section of the load-displacement curves. These bursts were studied comprehensively to explore incipient plasticity. Hertzian contact mechanics were implemented to extract the maximum shear stress beneath the indenter from the pop-in loads. The results show that the initial pop-in load increases as the temperature increases. The average initial pop-in load increases by almost four times from 300 °C to 650 °C. This was attributed to the formation of strengthening precipitates. The average size of the serrations and the magnitude of dislocation nucleation increase from 300 °C to 500 °C and decrease from 500 °C to 650 °C. Finally, the serrations are attributed to the dislocation generation and movement as well as their interaction with the solute atoms and precipitates.

36 MATERIALS SCIENCE↗

The effect of thermal exposure on the mechanical properties of aluminum-graphite composites

To promote the development of aluminum-graphite composites with improved properties for aerospace applications, composite samples were fabricated by solid-state diffusion bonding of liquid-phase Al-infiltrated Thornel 50 fibers, and their mechanical properties were measured at room temperature in the as-received condition, after temperature exposure and after thermal cycling. The interface structure in aluminum-graphite composites and its effect on the composite properties, the effect of thermal cycling on the tensile properties of the composites, and the characteristics of failures of the composites in tension is discussed. The studied composites exhibited tensile properties corresponding well with those predicted by the rule of mixtures. Thermal cycling between 20 C and 500 C, as well as the formation of the Al4C3 at the Al-graphite interfaces at temperatures above 500 C resulted in degradation of the composite strength. Scanning electron microscopy of fractured surfaces indicated that the relatively weak interface governs the mode of failure in tension.

Khan, I. H.↗

Laser Doppler vibrometry for piezoelectric coefficient ($d_{33}$) measurements in irradiated aluminum nitride

Sensors used for experiments in advanced reactors must survive in harsh environments. Few material systems can be used to construct sensors viable for extreme conditions. Aluminum nitride (AlN) is one such material because it has high thermal stability and radiation resistance and sustains good piezoelectric and dielectric properties at high temperatures. In this work, the piezoelectric coefficient $d_{33}$ of the AlN single-crystal with thermal and irradiation damage was investigated using an indirect method with a laser Doppler vibrometer (LDV). Surface electrodes were deposited on the AlN samples, and the vibration response of the samples to an applied voltage was monitored using the LDV as a function of the excitation frequency. The $d_{33}$ estimation was based on the excitation voltage and the thickness-mode displacement extracted from the LDV measurements. Further, six AlN substrates were irradiated with 8 MeV Al 2+ at three fluences (10 15 , 10 16 , and 10 17 ions/cm 2 ) and two temperatures (300 °C and 500 °C). The $d_{33}$ for the six irradiated samples and one pristine sample were measured, and the measurement uncertainty was estimated based on five repeated tests. All samples were also measured by a commercial piezometer for comparison. The experimental results demonstrate that the piezoelectric coefficients obtained by LDV were about 0.8–1.16 pm/V lower than those obtained by the piezometer. With the compensation of the clamping effect, the corrected LDV values are similar to the piezometer results. Both show similar trends in all samples, which validates the feasibility of the proposed method for $d_{33}$ measurement. Based on the LDV results, the irradiated samples show a 12%–22% decrease in $d_{33}$ compared with the pristine samples. The samples irradiated under the same fluence at a higher temperature (500 °C) demonstrated a lower $d_{33}$ than those at 300 °C. The effect of the retro-reflective tape, sample temperature, and sample size on the $d_{33}$ measurement were also studied.

36 MATERIALS SCIENCE↗