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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Detection of dilute organic acids in water by inelastic tunneling spectroscopy

Study of inelastic electron tunneling spectroscopy (IETS) spectra obtained from junctions exposed to dilute solutions of organic molecules in both liquid and vapor phases. The results indicate that it is possible in principle to detect the presence and to measure the concentration of at least some organic molecules in dilute aqueous solution by means of the IETS technique. Some fine points pertaining to the application of this technique are discussed, and it is pointed out that through appropriate refinements IETS may become a valuable tool for analytical water chemistry.

Skarlatos, Y.↗
NASA NTRS1994

Improved Electromechanical Infrared Sensor

Proposed electromechanical infrared detector improved version of device described in "Micromachined Electron-Tunneling Infrared Detectors" (NPO-18413). Fabrication easier, and undesired sensitivity to acceleration reduced. In devices, diaphragms and other components made of micromachined silicon, and displacements of diaphragms measured by electron tunneling displacement transducer {see "Micromachined Tunneling Accelerometer" (NPO-18513)}. Improved version offers enhanced frequency response and less spurious response to acceleration.

Kenny, Thomas W.↗
NASA NTRS1977

Surge current and electron swarm tunnel tests of thermal blanket and ground strap materials

The results are described of a series of current conduction tests with a thermal control blanket to which grounding straps have been attached. The material and the ground strap attachment procedure are described. The current conduction tests consisted of a surge current examination of the ground strap and a dilute flow, energetic electron deposition and transport through the bulk of the insulating film of this thermal blanket material. Both of these test procedures were used previously with thermal control blanket materials.

Hoffmaster, D. K.↗
DOE OSTI2023

Anodic Dissolution Rates Accelerate with Decreasing MoS 2 Nanoflake Thickness

Electrochemical gating of 2D transition metal dichalcogenide (TMD) electrodes is an emerging frontier in the field of semiconductor electrochemistry. In this approach, an applied bias modifies the charge carrier concentration of the 2D TMD, causing band edge shifts and drastic changes in charge transfer rates. However, leveraging this effect for (photo)electrocatalysis is practically limited by the stability of the TMD material under gating conditions. Gerischer showed anodic dissolution of bulk TMD electrodes can occur in the dark and hypothesized that the reaction proceeds via an electron tunneling mechanism from surface states to the TMD conduction band [H. Gerischer, D. Ross, and M. Lubke, Z. Physickalische Chem., 139, 1 (1984)]. Here we investigate this possibility in single MoS 2 nanoflakes using in situ optical microscopy and explore whether Gerischer’s electron tunneling mechanism can explain anodic dissolution rates of thin 2D semiconductors. Here, spatially resolved measurements show anodic dissolution initiates at perimeter edge sites and accelerates exponentially with decreasing layer thickness, consistent with Gerischer’s tunneling mechanism. Interestingly, single layer MoS 2 is impervious to anodic dissolution at applied potentials >200 mV more positive than those required to drive dissolution in bulk and multilayer-thick nanoflakes.

2D semiconductor↗
DOE OSTI2021

Molecular bridge-mediated ultralow-power gas sensing

Abstract We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.5 nm ALD SiO 2 ), which is notched ~10 nm into the stack between the gold electrodes. The exposed gold surface is functionalized with a self-assembled monolayer (SAM) of conjugated thiol linker molecules. When the device is exposed to a target gas (1,5-diaminopentane), the SAM layer electrostatically captures the target gas molecules, forming a molecular bridge across the nanogap. The gas capture lowers the barrier potential for electron tunneling across the notched edge region, from ~5 eV to ~0.9 eV and establishes additional conducting paths for charge transport between the gold electrodes, leading to a substantial decrease in junction resistance. We demonstrated an output resistance change of >10 8 times upon exposure to 80 ppm diamine target gas as well as ultralow standby power consumption of <15 pW, confirming electron tunneling through molecular bridges for ultralow-power gas sensing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Two-Dimensional Molecular Charge Density Waves in Single-Layer-Thick Islands of a Dirac Fermion System

Charge density waves have been intensely studied in inorganic materials such as transition metal dichalcogenides however its counterpart in organic materials has yet to be explored in detail. Here we report the finding of a robust two dimensional charge density waves in molecular layers formed by α-(BEDT-TTF) 2 -I 3 on a Ag(111) surface. Low temperature scanning tunnelling microscopy images of a multi-layer thick α-(BEDT-TTF) 2 -I 3 on Ag(111) substrate reveal coexistence of 5a0 x 5a0 and √31 a0 x √31 a0 R9° charge density wave patterns commensurate with the underlying molecular lattice at 80 K. Both charge density wave patterns remain in nano-size molecular islands with just a single constituent molecular-layer thickness at 80 K and 5 K. Local tunneling spectroscopy measurements reveal the variation of the gap from 244 meV to 288 meV between the maximum and minimum charge density wave locations. Density functional theory calculations further confirm a vertical positioning of BEDT-TTF molecules in the molecular layer. While the observed charge density wave patterns are stable for the defect sites, they can be reversely switched for one molecular lattice site by means of inelastic tunnelling electron energy transfer with the electron energies exceeding 400 meV using a scanning tunneling microscope manipulation scheme.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1995

Improved, Easier-To-Use Tunneling Infrared Sensors

Designs of electron-tunneling infrared sensors and micromachining processes used to fabricate them modified to increase sensitivity and to simplify operation, adjustment, and associated circuitry. Corrugations, pinholes, and standard packaging incorporated into design. Deflection voltages reduced, and thermal drifts eliminated. Performances exceed those of other commercially available, uncooled infrared sensors. Operation of sensors simplified to such extent, now feasible to ship them to nonexpert users for routine testing and evaluation in their laboratories.

Muller, Richard E.↗
NASA NTRS1982

Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling

Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.

Maserjian, J.↗
DOE OSTI2020

Long-distance coherence of Majorana wires

Theoretically, a pair of Majorana bound states in a topological superconductor forms a single fermionic level even at large separations, implying that the parity information is stored nonlocally. The nonlocality leads to a long-distance coherence for electrons tunneling through a Coulomb-blockaded Majorana wire, an effect that can be observed, e.g., in an interferometer. Here, we examine theoretically the coherent electron transfer, taking into account that tunneling implies the long-distance transfer of charge, which is carried by one-dimensional plasmons. In this work, we show that the charge dynamics does not affect the coherence of the electron tunneling process in a topological superconductor consisting of a semiconductor wire proximitized by a single bulk superconductor. The coherence may be strongly suppressed, however, if the topological superconductivity derives from a semiconductor wire proximitized by a granular superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Attractive Su-Schrieffer-Heeger-Hubbard model on a square lattice away from half-filling

The Su-Schrieffer-Heeger (SSH) model, with bond phonons modulating electron tunneling, is a paradigmatic electron-phonon model that hosts an antiferromagnetic order to bond order transition at half-filling. In the presence of a repulsive Hubbard interaction, the antiferromagnetic phase is enhanced, but the phase transition remains first order. Here, we explore the physics of the SSH model with an attractive Hubbard interaction, which hosts an interesting interplay among charge order, s-wave pairing, and bond order. Using the numerically exact determinant quantum Monte Carlo method, we show that both charge order, present at weak electron-phonon coupling, and bond order, at large coupling, give way to s-wave pairing when the system is doped. Lastly, we demonstrate that the SSH electron-phonon interaction competes with the attractive Hubbard interaction and reduces the s-wave pairing correlation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Micromachined Tunneling Displacement Transducers for Physical Sensors

We have designed and constructed a series of tunneling sensors which take advantage of the extreme position sensitivity of electron tunneling. In these sensors, a tunneling displacement transducer, based on scanning tunneling microscopy principles, is used to detect the signal-induced motion of a sensor element. Through the use of high-resonant frequency mechanical elements for the transducer, sensors may be constructed which offer wide bandwidth, and are robust and easily operated. Silicon micromachining may be used to fabricate the transducer elements, allowing integration of sensor and control electronics. Examples of tunneling accelerometers and infrared detectors will be discussed. In each case, the use of the tunneling transducer allows miniaturization of the sensor as well as enhancement of the sensor performance.

Kenny, T. W.↗
DOE OSTI2025

Keldysh tuning of photoluminescence in a lead halide perovskite crystal

In 1964, Keldysh laid the groundwork for strong-field physics in atomic, molecular, and solid-state systems by delineating a ubiquitous transition from multiphoton absorption to quantum electron tunneling under intense AC driving forces. While both processes in semiconductors can generate carriers and result in photon emission through electron-hole recombination, the low quantum yields in most materials have hindered direct observation of the Keldysh crossover. Leveraging the large quantum yields of photoluminescence in lead halide perovskites, we show that we can not only induce bright light emission from extreme sub-bandgap light excitation but also distinguish between photon-induced and electric-field-induced processes. Our results are rationalized by the Landau-Dykhne formalism, providing insights into the non-equilibrium dynamics of strong-field light-matter interactions. These findings open new avenues for light upconversion and sub-bandgap photon detection, highlighting the potential of lead halide perovskites in advanced optoelectronic applications.

FOS: Physical sciences↗
NASA NTRS1991

Micromachined silicon tunnel sensor for motion detection

The extreme sensitivity of electron tunneling to variations in electrode separation has been used to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.

Kenny, T. W.↗
DOE OSTI2023

Tunnel ionization within a one-dimensional, undriven plasma sheath

In high density, high temperature plasmas, the plasma sheath that develops can result in extremely high electric fields, on the order of tens to hundreds of V/nm. Under the right conditions, these electric fields can reach magnitudes that can increase the probability of electron tunneling ionization to occur, resulting in one or more electron-ion pairs. The presence of tunneling ionization can then modify the development of the plasma sheath, as well as properties such as the ion and electron densities and plasma potential. The tunnel ionization process for hydrogen atoms is demonstrated, in this work, as implemented in a Sandia National Laboratories, particle-in-cell code Aleph. Results are presented for the application of the tunnel ionization process to a one-dimensional, undriven plasma sheath. Additional results for cases that consider warm ions and neutrals, the inclusion of electron–neutral collisions, and the injection of neutral particles, as well as the application to various plasma devices, will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Imaging the energy gap modulations of the cuprate pair-density-wave state

The defining characteristic of Cooper pairs with finite center-of-mass momentum is a spatially modulating superconducting energy gap Δ(r). Recently, this concept has been generalized to the pair density wave (PDW) state predicted to exist in cuprates. Although the signature of a cuprate PDW has been detected in Cooperpair tunneling, the distinctive signature in single-electron tunneling of a periodic Δ(r) modulation has never been observed. Here, using a new approach, we discover strong Δ(r) modulations in Bi 2 Sr 2 CaCu 2 O 8+δ that have eight-unit-cell periodicity or wavevectors Q ≈ (2π/a0)(1/8, 0) and Q ≈ (2π/a0)(0, 1/8). Simultaneous imaging of the localdensity- of-states N(r, E) reveals electronic modulations with wavevectors Q and 2Q, as anticipated when the PDW coexists with superconductivity. Finally, by visualizing the topological defects in these N(r, E) density waves at 2Q, we discover them to be concentrated in areas where the PDW spatial phase changes by !, as predicted by the theory of half-vortices in a PDW state. Overall, this is a compelling demonstration, from multiple single-electron signatures, of a PDW state coexisting with superconductivity in the canonical cuprate Bi 2 Sr 2 CaCu 2 O 8+δ .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1976

Traps in Al2O3 detected by tunneling

A structure, quite different from inelastic tunneling peaks, has been observed in electron-tunneling spectra of MOM junctions. A capacitance peak is associated with this structure, which is attributed to traps in the oxide at energies smaller than those previously reported. The C-V characteristics calculated using a single-energy trap model agree with experimental results; however, no satisfactory explanation has yet been found to account for the strong temperature dependence of the trap energy levels.

Skarlatos, Y.↗