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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Complementary heterojunction FET technology for space application

A 32-bit serial integer multiplier was designed to investigate the yield and performance of complementary heterojunction FET (CHFET) technology. This is the largest reported CHFET logic circuit. The maximum operating frequency was 500 MHz. Very low power dissipation of 3 mW was obtained at 5 MHz operation. Single-event upset (SEU) characteristics of CHFET devices and latches were also measured and indicates the potential for SEU hard circuits for space and military applications.

Larue, George↗
NASA NTRS2001

Analysis of long-channel nanotube field-effect-transistors (NT FETs)

This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

Toshishige, Yamada↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: The Effect of Load Conditions on Destructive SEE

Recent testing of Enhanced Power Conversion (EPC) eGaN FET devices design for power use has shown that the devices are susceptible to Single-Event Effects (SEE) that degrade or destroy the device. The exact mechanism of the SEE is not known. The testing so far has been in the static condition, in the fully off condition, and with minimal load conditions. These conditions may not be worst case. This report presents the results of a study that tests some of the load conditions for SEE. The EPC2012 and EPC1012 were chosen for the test. The tests were performed the TAMU radiation effects facility in May and June of 2013.

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: Comparison of EPC1000 and EPC2000 Series Devices for Destructive SEE

Recent testing of the EPC1000 series eGaN FETs has shown sensitivity to Single Event Effects (SEE) that are destructive. These effects are most likely the failure of the very thin gate structure in HEMT architecture. EPC has recently changed the doping of the substrate to improve the performance and the SEE response. This testing compares the SEE response of both devices.

Scheick, Leif↗
NASA NTRS2014

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

Scheick, Leif↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012

Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data.

Scheick, Leif↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗