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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Nuclear charge radii of germanium isotopes around N = 40

Collinear laser spectroscopy measurements were performed on 68−74 Ge isotopes (Z=32) at ISOLDE-CERN, by probing the 4s 2 4p 2 3 P 1 → 4s 2 4p5s 3 P$^{o}_{1}$ atomic transition (269~nm) of germanium. Nuclear charge radii are determined via the measured isotope shifts, revealing a larger local variation than the neighboring isotopic chains. Nuclear density functional theory with the Fayans functionals Fy(Δr,HFB) and Fy(IVP), and the SV-min Skyrme describes the experimental data for the differential charge radii δ⟨r 2 ⟩ and charge radii R c within the theoretical uncertainties. The observed large variation in the charge radii of germanium isotopes is better accounted for by theoretical models incorporating ground state quadrupole correlations. This suggests that the polarization effects due to pairing and deformation contribute to the observed large odd-even staggering in the charge radii of the Ge isotopic chain.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Formation of distinctive nanostructured metastable polymorphs mediated by kinetic transition pathways in germanium

High-pressure β -Sn germanium may transform into diverse metastable allotropes with distinctive nanostructures and unique physical properties via multiple pathways under decompression. However, the mechanism and transition kinetics remain poorly understood. Here, we investigate the formation of metastable phases and nanostructures in germanium via controllable transition pathways of β -Sn Ge under rapid decompression at different rates. High-resolution transmission electron microscopy reveals three distinct metastable phases with the distinctive nanostructures: an almost perfect st12 Ge crystal, nanosized bc8/r8 structures with amorphous boundaries, and amorphous Ge with nanosized clusters (0.8–2.5 nm). Fast in situ x-ray diffraction and x-ray absorption measurements indicate that these nanostructured products form in certain pressure regions via distinct kinetic pathways and are strongly correlated with nucleation rates and electronic transitions mediated by compression rate, temperature, and stress. This work provides deep insight into the controllable synthesis of metastable materials with unique crystal symmetries and nanostructures for potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ionization yield measurement in a germanium CDMSlite detector using photo-neutron sources

Two photo-neutron sources, Y 88 Be 9 and Sb 124 Be 9 , have been used to investigate the ionization yield of nuclear recoils in the CDMSlite germanium detectors by the SuperCDMS collaboration. In this study, we evaluate the yield for nuclear recoil energies between 1 and 7 keV at a temperature of ~ 50 mK . We use a geant4 simulation to model the neutron spectrum assuming a charge yield model that is a generalization of the standard Lindhard model and consists of two energy dependent parameters. We perform a likelihood analysis using the simulated neutron spectrum, modeled background, and experimental data to obtain the best fit values of the yield model. The ionization yield between recoil energies of 1 and 7 keV is shown to be significantly lower than predicted by the standard Lindhard model for germanium. There is a general lack of agreement among different experiments using a variety of techniques studying the low energy range of the nuclear recoil yield, which is most critical for interpretation of direct dark matter searches. This suggests complexity in the physical process that many direct detection experiments use to model their primary signal detection mechanism and highlights the need for further studies to clarify underlying systematic effects that have not been well understood up to this point.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Evidence of Coherent Elastic Neutrino-Nucleus Scattering with COHERENT’s Germanium Array

We report the first detection of coherent elastic neutrino-nucleus scattering (CEvNS) on natural germanium, measured at the Spallation Neutron Source at Oak Ridge National Laboratory. The Ge-Mini detector of the COHERENT collaboration employs large-mass, low-noise, high-purity germanium spectrometers, enabling excellent energy resolution, and an analysis threshold of 1.5 keV electron-equivalent ionization energy. We observe an on-beam excess of 20.6$^{+7.1}_{−6.3}$ counts with a total exposure of 10.22 GWhkg, and we reject the no-CEvNS hypothesis with 3.9⁢𝜎 significance. The result agrees with the predicted standard model of particle physics signal rate within 2⁢𝜎.

Electroweak interaction↗
DOE OSTI2024

First demonstration of 30 eVee ionization energy resolution with RICOCHET germanium cryogenic bolometers

The future RICOCHET experiment aims to search for new physics in the electroweak sector by measuring the Coherent Elastic Neutrino-Nucleus Scattering process from reactor antineutrinos with high precision down to the sub-100 eV nuclear recoil energy range. While the RICOCHET collaboration is currently building the experimental setup at the reactor site, it is also finalizing the cryogenic detector arrays that will be integrated into the cryostat at the Institut Laue Langevin in early 2024. In this paper, we report on recent progress from the Ge cryogenic detector technology, called the CryoCube. More specifically, we present the first demonstration of a 30 eVee (electron equivalent) baseline ionization resolution (RMS) achieved with an early design of the detector assembly and its dedicated High Electron Mobility Transistor (HEMT) based front-end electronics with a total input capacitance of about 40 pF. This represents an order of magnitude improvement over the best ionization resolutions obtained on similar phonon-and-ionization germanium cryogenic detectors from the EDELWEISS and SuperCDMS dark matter experiments, and a factor of three improvement compared to the first fully-cryogenic HEMT-based preamplifier coupled to a CDMS-II germanium detector with a total input capacitance of 250 pF. Additionally, we discuss the implications of these results in the context of the future RICOCHET experiment and its expected background mitigation performance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Communication—Controlling Etching of Germanium through Surface Charge Manipulation

Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to an etch rate of 1.45 ± 0.07 nm min −1 , increasing to 12.6 ± 0.2 nm min −1 when grounded, 97 ± 2 nm min −1 when biased at −0.9 V, and 138 ± 2 nm min −1 with periodic biasing. Results suggest that the previously reported limited etching in KOH is associated with the recombination of holes with electrons injected from the surface reaction. The results of this study demonstrate that changing the hole concentration through biasing is an effective tool to control electrolytic etch rates, enabling future selective etching processes for germanium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Germanium Telluride Chalcogenide Switches for RF Applications

This project developed prototype germanium telluride switches, which can be used in RF applications to improve SWAP (size, weight, and power) and signal quality in RF systems. These switches can allow for highly reconfigurable systems, including antennas, communications, optical systems, phased arrays, and synthetic aperture radar, which all have high impact on current National Security goals for improved communication systems and communication technology supremacy. The final result of the project was the demonstration of germanium telluride RF switches, which could act as critical elements necessary for a single chip RF communication system that will demonstrate low SWAP and high reconfigurability

42 ENGINEERING↗
DOE OSTI2021

A New Route to Quantum-Scale Structures through a Novel Enhanced Germanium Diffusion Mechanism

This project sought to develop a fundamental understanding of the mechanisms underlying a newly observed enhanced germanium (Ge) diffusion process in silicon germanium (SiGe) semiconductor nanostructures during thermal oxidation. Using a combination of oxidationdiffusion experiments, high resolution imaging, and theoretical modeling, a model for the enhanced Ge diffusion mechanism was proposed. Additionally, a nanofabrication approach utilizing this enhanced Ge diffusion mechanism was shown to be applicable to arbitrary 3D shapes, leading to the fabrication of stacked silicon quantum dots embedded in SiGe nanopillars. A new wet etch-based method for preparing 3D nanostructures for highresolution imaging free of obscuring material or damage was also developed. These results enable a new method for the controlled and scalable fabrication of on-chip silicon nanostructures with sub-10 nm dimensions needed for next generation microelectronics, including low energy electronics, quantum computing, sensors, and integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

This paper focuses on the research and development of high-purity germanium (HPGe) crystals for detector fabrication, specifically targeting applications in rare-event physics searches. The primary objective was to produce large-scale germanium crystals weighing >1 kg with a controlled diameter of ∼10 cm and an impurity range of approximately 1010/cm 3. Ensuring structural integrity and excellent crystalline quality requires a thorough assessment of dislocation density, a critical aspect of the crystal development process. Dislocation density measurements play a crucial role in maximizing the sensitivity of HPGe detectors, and our findings confirmed that the dislocation density fell within acceptable ranges for detector fabrication. Additionally, this paper examines the segregation coefficient of various contaminants during the crystal development process. Comprehensive analysis of impurity segregation is essential for reducing contaminant quantities in the crystal lattice and customizing purification processes. This, in turn, minimizes undesired background noise, enhancing signal-to-noise ratios for rare-event physics searches and overall detector performance. The investigation included the segregation coefficients of three major acceptors and one donor in crystals grown at the University of South Dakota, providing valuable insights for optimizing crystal purity and detector efficiency.

Bhattarai, Sanjay↗
NASA NTRS1968

Hydrogen peroxide etching proves useful for germanium

Influence of process variations in the etching of germanium with hydrogen peroxide has been studied, along with damage effects due to radiation. The work advances the knowledge of the etching process for germanium.

Dayal, Y.↗
NASA NTRS1973

High temperature material interactions of thermoelectric systems using silicon germanium.

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Stapfer, G.↗
NASA NTRS1976

Germanium-overcoated niobium Dayem bridges

Overcoating constriction microbridges with semiconducting germanium provides additional thermal conductivity at liquid-helium temperatures to reduce the effects of self-heating in these Josephson junctions. Microwave-induced steps were observed in the I-V characteristics of an overcoated Dayem bridge fabricated in a 15-nm-thick niobium film; at least 20 steps could be counted at 4.2 K. No steps were observed in the I-V characteristics of the bridge prior to overcoating. In addition, the germanium overcoat can protect against electrical disturbances at room temperature.

Holdeman, L. B.↗
NASA NTRS1978

Radiation damage of germanium detectors

Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.

Pehl, R. H.↗
NASA NTRS1983

Chemical Vapor Deposition of Germanium of Silicon

Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.

Aharoni, H.↗
NASA NTRS1982

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Gatos, H. C.↗
NASA NTRS1982

Measurement of the dispersive and refractive indices of germanium using diode lasers

Germanium Fabry-Perot etalons are commonly used in diode laser spectroscopy to establish relative frequency calibration scales for molecular absorption spectra. Typically the channel spectrum of the etalon is recorded simultaneously with the molecular spectrum as the laser injection current is tuned linearly, and the etalon free spectral range (fringe spacing) is used to measure the frequency separations among lines in the molecular spectrum. For this purpose, the etalon free spectral range must be known for the measurement wavelength, and this in turn relies on knowledge of the etalon length and the dispersive index at this wavelength. It is pointed out that the most satisfactory approach is to measure directly the free spectral range or dispersive index of the etalon at the wavelength of interest. A description is presented of measurements of this type, performed near 7.9 and 10.1 micrometers for a 7.7-cm long germanium etalon.

Jennings, D. E.↗
NASA NTRS1983

Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

Gehrels, N.↗
NASA NTRS1983

Neutron-transmutation-doped germanium bolometers

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Palaio, N. P.↗