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At least 73 records · Page 4

Latest trends in parts SEP susceptibility from heavy ions

JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.

Nichols, Donald K.↗

1990 IEEE Annual Conference on Nuclear and Space Radiation Effects, 27th, Reno, NV, July 16-20, 1990, Proceedings

Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, single-event upset and latchup, isolation technologies, device and integrated circuit effects and hardening, spacecraft charging and electromagnetic effects.

Fleetwood, Daniel M.↗

Laser Scanner Tests For Single-Event Upsets

Microelectronic advanced laser scanner (MEALS) is opto/electro/mechanical apparatus for nondestructive testing of integrated memory circuits, logic circuits, and other microelectronic devices. Multipurpose diagnostic system used to determine ultrafast time response, leakage, latchup, and electrical overstress. Used to simulate some of effects of heavy ions accelerated to high energies to determine susceptibility of digital device to single-event upsets.

Kim, Quiesup↗

Implementation of ionizing radiation environment requirements for Space Station

Proper functioning of Space Station hardware requires that the effects of high-energy ionizing particles from the natural environment and (possibly) from man-made sources be considered during design. At the Space Station orbit of 28.5-deg inclination and 330-440 km altitude, geomagnetically trapped protons and electrons contribute almost all of the dose, while galactic cosmic rays and anomalous cosmic rays may produce Single Event Upsets (SEUs), latchups, and burnouts of microelectronic devices. Implementing ionizing radiation environment requirements for Space Station has been a two part process, including the development of a description of the environment for imposing requirements on the design and the development of a control process for assessing how well the design addresses the effects of the ionizing radiation environment. We will review both the design requirements and the control process for addressing ionizing radiation effects on Space Station.

Boeder, Paul A.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗

Compiled Data On Single-Event Effects Caused By Heavy Ions

Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.

Nichols, Donald K.↗

To the Die Smartly: Heavy Ion Testing of PEMs on COTS Boards Through the Plastic

Seven commercial off the shelf (COTS) boards containing electronic devices (all in plastic packages, PEMS), under consideration for use in a spacecraft subsystem, were exposed to beams of very high energy ions at the National Superconducting Cyclotron Laboratory (MSU). The ion energies were high enough that an entire board could be exposed in air, and it could still penetrate through the plastic and reach the silicon die. A total of about 300 runs were made, and for each, the LET of the ion entering the silicon die had to be determined, based on the thickness of the plastic lid and the thickness of overlaying materials (e.g., aluminum degraders). Single event latchup (SEL) and functional interrupt (SEFI) were determined during each run, the SEFI by means of simple programs being continuously written to and read from the boards to monitor functionality, while each part was being exposed to the heavy ions.

Wert, J. L.↗

Current Radiation Issues for Programmable Elements and Devices

The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.

Katz, Richard↗

Natural Hazards of the Space Environment

Spacecraft in Low Earth Orbit (LEO) are subject to numerous environmental hazards. Here I'll briefly discuss three environment factors that pose acute threats to the survival of spacecraft systems and crew: atmospheric drag, impacts by meteoroids and orbital debris, and ionizing radiation. Atmospheric drag continuously opposes the orbital motion of a satellite, causing the orbit to decay. This decay will lead to reentry if not countered by reboost maneuvers. Orbital debris is a by-product of man's activities in space, and consists of objects ranging in size from miniscule paint chips to spent rocket stages and dead satellites. Ionizing radiation experienced in LEO has several components: geomagnetically trapped protons and electrons (Van Allen belts); energetic solar particles; galactic cosmic rays; and albedo neutrons. These particles can have several types of prompt harmful effects on equipment and crew, from single-event upsets, latchup, and burnout of electronics, to lethal doses to crew.All three types of prompt threat show some dependence on the solar activity cycle. Atmospheric drag mitigation and large debris avoidance require propulsive maneuvers. M/OD and ionizing radiation require some form of shielding for crew and sensitive equipment. Limiting exposure time is a mitigation technique for ionizing radiation and meteor streams.

Evans, Steven W.↗

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗

FPGAs in Space Environment and Design Techniques

This viewgraph presentation gives an overview of Field Programmable Gate Arrays (FPGA) in the space environment and design techniques. Details are given on the effects of the space radiation environment, total radiation dose, single event upset, single event latchup, single event transient, antifuse technology and gate rupture, proton upsets and sensitivity, and loss of functionality.

Katz, Richard B.↗

Space Radiation Effects in Advanced Flash Memories

Memory storage requirements in space systems have steadily increased, much like storage requirements in terrestrial systems. Large arrays of dynamic memories (DRAMs) have been used in solid-state recorders, relying on a combination of shielding and error-detection-and correction (EDAC) to overcome the extreme sensitivity of DRAMs to space radiation. For example, a 2-Gbit memory (with 4-Mb DRAMs) used on the Clementine mission functioned perfectly during its moon mapping mission, in spite of an average of 71 memory bit flips per day from heavy ions. Although EDAC worked well with older types of memory circuits, newer DRAMs use extremely complex internal architectures which has made it increasingly difficult to implement EDAC. Some newer DRAMs have also exhibited catastrophic latchup. Flash memories are an intriguing alternative to DRAMs because of their nonvolatile storage and extremely high storage density, particularly for applications where writing is done relatively infrequently. This paper discusses radiation effects in advanced flash memories, including general observations on scaling and architecture as well as the specific experience obtained at the Jet Propulsion Laboratory in evaluating high-density flash memories for use on the NASA mission to Europa, one of Jupiter's moons. This particular mission must pass through the Jovian radiation belts, which imposes a very demanding radiation requirement.

Johnston, A. H.↗

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗

Design Tools for Reconfigurable Hardware in Orbit (RHinO)

The Reconfigurable Hardware in Orbit (RHinO) project is focused on creating a set of design tools that facilitate and automate design techniques for reconfigurable computing in space, using SRAM-based field-programmable-gate-array (FPGA) technology. These tools leverage an established FPGA design environment and focus primarily on space effects mitigation and power optimization. The project is creating software to automatically test and evaluate the single-event-upsets (SEUs) sensitivities of an FPGA design and insert mitigation techniques. Extensions into the tool suite will also allow evolvable algorithm techniques to reconfigure around single-event-latchup (SEL) events. In the power domain, tools are being created for dynamic power visualiization and optimization. Thus, this technology seeks to enable the use of Reconfigurable Hardware in Orbit, via an integrated design tool-suite aiming to reduce risk, cost, and design time of multimission reconfigurable space processors using SRAM-based FPGAs.

French, Mathew↗

Virtex-II Pro SEE Test Methods and Results

The Xilinx Virtex-II Pro is a platform FPGA that embeds multiple microprocessors within the fabric of an SRAM-based reprogrammable FPGA. The variety and quantity of resources provided by this family of devices make them very attractive for spaceflight applications. However, these devices will be susceptible to single event effects (SEE), which must be mitigated. To use the Virtex-II Pro reliably in space applications, these devices must first be tested to determine if they are susceptible to single event latchup (SEL), the degree to which they are susceptible to single event upsets (SEU) and single event transients (SET), and how these effects are manifested in the device. With this information, mitigations schemes can be developed and tested that address the specific susceptiblities of these devices. This initial SEE test uses a commercial off the shelf Virtex-II Pro evaluation board, with a single processor XC2VP7 FPGA. The FPGA on this board is an acid etched device, which can be partially covered with a shield. The shield covers a portion of the logic, routing, and memory resources along with some of the RocketIO transceivers. The processor, along with a large portion of logic, routing, memory, and transceivers are left exposed. This test will be performed at the Cyclotron Laboratories at Texas A&M University and Michigan State University using ions of varying energy levels and fluencies.

Petrick, David↗

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗

Virtex-II Pro SEE Test Methods and Results

The objective of this coarse Single Event Effect (SEE) test is to determine the suitability of the commercial Virtex-II Pro family for use in spaceflight applications. To this end, this test is primarily intended to determine any Singe Event Latchup (SEL) susceptibilities for these devices. Secondly, this test is intended to measure the level of Single Event Upset (SEU) susceptibilities and in a general sense where they occur. The coarse SEE test was performed on a commercial XC2VP7 device, a relatively small single processor version of the Virtex-II Pro. As the XC2VP7 shares the same functional block design and fabrication process with the larger Virtex-II Pro devices, the results of this test should also be applicable to the larger devices. The XC2VP7 device was tested on a commercial Virtex-II Pro development board. The testing was performed at the Cyclotron laboratories at Texas A&M and Michigan State Universities using ions of varying energy levels and fluences.

Petrick, David↗