Search NASA⌕ Search

SEARCH · Search NASA

Results for “Schottky”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗
NASA NTRS2014

Destructive Single-Event Failures in Schottky Diodes

This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

Schottky Diodes↗
NASA NTRS2014

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

silicon carbide (SiC)↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

single-event effect (SEE)↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.

Radiation effects↗
NASA NTRS1973

Electron-beam studies of Schottky-barrier detector surfaces

Review of the surface anomalies occurring in Schottky-barrier particle detectors identifiable by means of an electron beam technique employed by Czaja (1965) for analyzing defects in diode structures. The technique is shown to make possible the detection and identification of the following anomalies: (1) chemical contamination of the detector surface; (2) mechanical damage of the wafer substrates; (3) damage introduced in semiconductor surface preparation; (4) radiation damage; and (5) defective surface metallization.

Peckerar, M. C.↗
NASA NTRS1974

Solar and laser energy conversion with Schottky barrier solar cells

Photovoltaic devices have been fabricated for solar and short-wavelength laser energy conversion using the thin metal film-semiconductor (Schottky barrier) approach. Studies of the metal film optical characteristics and the voltage outputs were emphasized. Air mass zero efficiencies of 8 to 9% in GaAs and laser conversion efficiencies of 25% at 4880 A in GaAs(0.6)P(0.4) are presently measured, with projected efficiencies of 15 and 45%, respectively. The techniques, if applied successfully to semiconductor thin films, could have an impact in solar energy terrestrial application.

Stirn, R. J.↗
NASA NTRS1975

Schottky barrier solar cell promises improved efficiency

Higher current and higher voltage can be obtained by using Schottky barrier device with wide band-gap semiconductor as top layer and lower band-gap semiconductor underneath. Significant amount of solar radiation that is not absorbed by side band-gap material will be absorbed by narrow band-gap material.

Stirn, R. J.↗
NASA NTRS1975

Silicon Schottky photovoltaic diodes for solar energy conversion

Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

Anderson, W. A.↗
NASA NTRS1975

Improved Schottky barrier solar cells

Schottky barrier (SB) solar cells have been fabricated for solar energy conversion using GaAs and GaAs 0.78P0.22. Conversion efficiencies of 9% for air mass zero and 12% for terrestrial sun were observed for antireflection coated GaAs0.78P0.22 SB cells. The corresponding efficiencies for GaAs SB cells were 7% and 10%, respectively. These efficiencies are for cells with no interfacial layer effect. The short circuit current density for GaAs SB cells has been improved. The use of an ellipsometer to determine the optimum antireflection coating parameters is illustrated.

Yeh, Y.-C. M.↗