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An electropolymerized film comprised of polymers and copolymers of a monomer is formed on the surface of an anode. The finished structures have superior electrical and mechanical properties for use in applications such as electrostatic dissipation and for the reduction of the radar cross section of advanced aircraft.
Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.
A contaminant is any material or substance which is potentially undesirable or which may adversely affect any part, component, or assembly. Contamination control of SRM hardware surfaces is a serious concern, for both Thiokol and NASA, with particular concern for contaminants which may adversely affect bonding surfaces. The purpose of this study is to develop laboratory analytical techniques which will make it possible to certify the cleanliness of any designated surface, with special focus on particulates (dust, dirt, lint, etc.), oils (hydrocarbons, silicones, plasticizers, etc.), and greases (HD-2, fluorocarbon grease, etc.). The hardware surfaces of concern will include D6AC steel, aluminum alloys, anodized aluminum alloys, glass/phenolic, carbon/phenolic, NBR/asbestos-silica, and EPDM rubber.
Thermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.
Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. In this work, photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O was observed. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.
The behavior in space environment of evaporated Al uncoated and coated with reactively deposited silicon oxide (SiOx), electron beam evaporated SiO2 and Al2O3, and Al and Ag coated with double layers of Al2O3 + SiOx is compared with metallized Teflon and Kapton, anodized Al (Alzak), and white paints. Flight data from three calorimetric experiments and one reflectometer flown in different orbital environments are compared with laboratory test data. The results demonstrate that evaporated thin films are extremely versatile and stable coatings for space applications. Through the use of control samples studied in different laboratory tests and monitored for up to 12,000 hours of solar exposure in different orbits, a classification of orbital severity and an estimate of laboratory simulation accuracy is obtained.
Candidate Space Station Freedom radiator coatings including Z-93, YB-71, anodized aluminum and SiO(x) coated silvered Teflon have been characterized for optical properties degradation upon exposure to environments containing atomic oxygen, vacuum ultraviolet (VUV) radiation, and/or silicone contamination. YB-71 coating showed a blue-gray discoloration, which has not been observed in space, upon exposure in atomic oxygen facilities which also provide exaggerated VUV radiation. This is evidence that damage mechanisms occur in these ground laboratory facilities which are different from those which occur in space. Radiator coatings exposed to an electron cyclotron resonance (ECR) atomic oxygen source in the presence of silicone-containing samples showed severe darkening from the intense VUV radiation provided by the ECR and from silicone contamination. Samples exposed to atomic oxygen from the ECR source and to VUV lamps, simultaneously, with in situ reflectance measurement, showed that significantly greater degradation occurred when samples received line-of-site ECR beam exposure than when samples were exposed to atomic oxygen scattered off of quartz surfaces without line-of-site view of the ECR beam. For white paints, exposure to air following atomic oxygen/VUV exposure reversed the darkening due to VUV damage. This illustrates the importance of in situ reflectance measurement.
A major goal of this project is to produce porous silicon carbide (PSiC) via an electroless process for eventual utilization in nanoscale sensing platforms. Results in the literature have shown a variety of porous morphologies in SiC produced in anodic cells. Therefore, predictability and reproducibility of porous structures are initial concerns. This work has concentrated on producing morphologies of known porosity, with particular attention paid toward producing the extremely high surface areas required for a porous flow sensor. We have conducted a parametric study of electroless etching conditions and characteristics of the resulting physical nanostructure and also investigated the relationship between morphology and materials properties. Further, we have investigated bulk etching of SiC using both photo-electrochemical etching and inductively-coupled-plasma reactive ion etching techniques.
A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.
Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.
The ability of SEM/EDAX to determine the physical and chemical composition of very small areas was used to study several diverse types of samples representative of NASA-LaRC technology. More systematic investigation was carried out on differences in the results of grit-blasting Ti 6-4 adherends and the presence of extraneous elements, primarily silicon, in some polymer/HT-S fiber composites. Initial results were obtained from a fractured (ILS) short-beam shear specimen, and from Ti 6-4 alloy, before and after a proprietary Boeing anodizing surface preparation for adhesive bonding. Photomicrographs and EDAX spectra were also obtained from new, fractured lap shear strength specimens that employed PPQ and LARC-13 adhesives.
The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.
The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.
When considering the construction of a lunar base, the high cost ($ 100,000 a kilogram) of transporting materials to the surface of the moon is a significant barrier. Therefore in-situ resource utilization will be a key component of any lunar mission. Oxygen gas is a key resource, abundant on earth and absent on the moon. If oxygen could be produced on the moon, this provides a dual benefit. Not only does it no longer need to be transported to the surface for breathing purposes; it can also be used as a fuel oxidizer to support transportation of crew and other materials more cheaply between the surface of the moon, and lower earth orbit (approximately $20,000/kg). To this end a stable, robust (lightly manned) system is required to produce oxygen from lunar resources. Herein, we investigate the feasibility of producing oxygen, which makes up almost half of the weight of the moon by direct electrolysis of the molten lunar regolith thus achieving the generation of usable oxygen gas while producing primarily iron and silicon at the cathode from the tightly bound oxides. The silicate mixture (with compositions and mechanical properties corresponding to that of lunar regolith) is melted at temperatures near 1600 C. With an inert anode and suitable cathode, direct electrolysis (no supporting electrolyte) of the molten silicate is carried out, resulting in production of molten metallic products at the cathode and oxygen gas at the anode. The effect of anode material, sweep rate, and electrolyte composition on the electrochemical behavior was investigated and implications for scale-up are considered. The activity and stability of the candidate anode materials as well as the effect of the electrolyte composition were determined. Additionally, ex-situ capture and analysis of the anode gas to calculate the current efficiency under different voltages, currents and melt chemistries was carried out.
While in space silicone based elastomer seals planned for use on NASA's Crew Exploration Vehicle (CEV) are exposed to threats from micrometeoroids and orbital debris (MMOD). An understanding of these threats is required to assess risks to the crew, the CEV orbiter, and missions. An Earth based campaign of hypervelocity impacts on small scale seal rings has been done to help estimate MMOD threats to the primary docking seal being developed for the Low Impact Docking System (LIDS). LIDS is being developed to enable the CEV to dock to the ISS (International Space Station) or to Altair (NASA's next lunar lander). The silicone seal on LIDS seals against aluminum alloy flanges on ISS or Altair. Since the integrity of a seal depends on both sealing surfaces, aluminum targets were also impacted. The variables considered in this study included projectile mass, density, speed, incidence angle, seal materials, and target surface treatments and coatings. Most of the impacts used a velocity near 8 km/s and spherical aluminum projectiles (density = 2.7 g/cubic centimeter), however, a few tests were done near 5.6 km/s. Tests were also performed using projectile densities of 7.7, 2.79, 2.5 or 1.14 g/cubic centimeter. Projectile incidence angles examined included 0 degrees, 45 degrees , and 60 degrees from normal to the plane of the target. Elastomer compounds impacted include Parker's S0383-70 and Esterline's ELA-SA-401 in the as received condition, or after an atomic oxygen treatment. Bare, anodized and nickel coated aluminum targets were tested simulating the candidate mating seal surface materials. After impact, seals and aluminum plates were leak tested: damaged seals were tested against an undamaged aluminum plate; and undamaged seals were placed at various locations over craters in aluminum plates. It has been shown that silicone elastomer seals can withstand an impressive level of damage before leaking beyond allowable limits. In general on the tests performed to date, the diameter of the crater in either the elastomer, or the aluminum, must be at least as big as 80% to 90% of width of the bulb of the seal before significant leakage occurs.
While in space silicone based elastomer seals planned for use on NASA's Crew Exploration Vehicle (CEV) are exposed to threats from micrometeoroids and orbital debris (MMOD). An understanding of these threats is required to assess risks to the crew, the CEV orbiter, and missions. An Earth based campaign of hypervelocity impacts on small scale seal rings has been done to help estimate MMOD threats to the primary docking seal being developed for the Low Impact Docking System (LIDS). LIDS is being developed to enable the CEV to dock to the ISS (International Space Station) or to Altair (NASA's next lunar lander). The silicone seal on LIDS seals against aluminum alloy flanges on ISS or Altair. Since the integrity of a seal depends on both sealing surfaces, aluminum targets were also impacted. The variables considered in this study included projectile mass, density, speed, incidence angle, seal materials, and target surface treatments and coatings. Most of the impacts used a velocity near 8 km/s and spherical aluminum projectiles (density = 2.7 g/cubic cm), however, a few tests were done near 5.6 km/s. Tests were also performed using projectile densities of 7.7, 2.79, 2.5 or 1.14 g/cubic cm. Projectile incidence angles examined included 0 deg, 45 deg, and 60 deg from normal to the plane of the target. Elastomer compounds impacted include Parker's S0383-70 and Esterline's ELA-SA-401 in the as received condition, or after an atomic oxygen treatment. Bare, anodized and nickel coated aluminum targets were tested simulating the candidate mating seal surface materials. After impact, seals and aluminum plates were leak tested: damaged seals were tested against an undamaged aluminum plate; and undamaged seals were placed at various locations over craters in aluminum plates. It has been shown that silicone elastomer seals can withstand an impressive level of damage before leaking beyond allowable limits. In general on the tests performed to date, the diameter of the crater in either the elastomer, or the aluminum, must be at least as big as 80% to 90% of width of the bulb of the seal before significant leakage occurs.
A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.
The NASA Long Duration Exposure Facility (LDEF), a passive experimental satellite, was placed into low-Earth orbit by the Shuttle Challenger in Apr. 1984. The LDEF spent an unprecedented 69 months in space. The flight and recovery of the LDEF provided a wealth of information on the longterm space environmental effects of a variety of materials exposed to the low-Earth orbit environment. Surface characterization of LDEF materials included polymers, composites, thermal control paints, and aluminum. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and contact angle analysis were used to document changes in both the surface composition and surface chemistry of these materials. Detailed XPS analysis of the polymer systems, such as Kapton, polyimide polysiloxane copolymers, and fluorinated ethylene propylene thermal blankets on the backside of the LDEF revealed significant changes in both the surface composition and surface chemistry as a result of exposure to the low-Earth orbit environment. Polymer systems such as Kapton, polyimide polysiloxane copolymers, and polysulfone showed a common trend of decreasing carbon content and increasing oxygen content with respect to the control sample. Carbon 1s curve fit XPS analysis of the composite samples, in conjunction with SEM photomicrographs, revealed significant ablation of the polymer matrix resin to expose the carbon fibers of the composite during exposure to the space environment. Surface characterization of anodized aluminum tray clamps, which were located at regular intervals over the entire LDEF frame, provided the first results to evaluate the extent of contamination with respect to position on the LDEF. The XPS results clearly showed that the amount and state of both silicon and fluorine contamination were directly dependent upon the position of the tray clamp on the LDEF.