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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Understanding the plasticity contributions during laser-shock loading and spall failure of Cu microstructures at the atomic scales

A hybrid atomic-scale and continuum modeling framework is used to study the microstructural evolution during the laser-induced shock deformation and failure (spallation) of copper microstructures. A continuum two-temperature model (TTM) is used to account for the interaction of Cu atoms with a laser in molecular dynamics (MD) simulations. The MD-TTM simulations study the effect of laser loading conditions (laser fluence) on the microstructure (defects) evolution during various stages of shock wave propagation, reflection, and interaction in single-crystal (sc) Cu systems. In addition, the role of the microstructure is investigated by comparing the defect evolution and spall response of sc-Cu and nanocrystalline (nc) Cu systems. The defect (stacking faults and twin faults) evolution behavior in the metal at various times is further characterized using virtual in situ selected area electron diffraction and x-ray diffraction during various stages of evolution of microstructure. Here, the simulations elucidate the uncertain relation between spall strength and strain-rate and the much stronger relation between the spall strength and the temperatures generated due to laser shock loading for the small Cu sample dimensions considered here.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.

14 SOLAR ENERGY↗
DOE OSTI2018

Spall fracture in additive manufactured tantalum

In this work, we present a series of experiments on the response of additive manufactured (AM) tantalum to dynamic loading, specifically the spall strength. Rectangular plates of AM tantalum were produced, with subsequent characterization revealing a highly anisotropic microstructure. Samples were taken from these plates to investigate the effect of anisotropy on the spall strength: the resistance to high strain-rate tensile damage. A conventional, wrought tantalum sample, possessing an equiaxed microstructure, was also tested to serve as a control. Additionally, shock loading was performed via light gas-gun flyer-plate impact experiments, with laser velocimetry on the rear of the samples to record the shock wave profiles and soft-recovery techniques to allow post-mortem analysis. In general, the AM samples were found to have a higher Hugoniot elastic limit, the dynamic yield strength under shock loading, while having a reduced spall strength, when compared to the wrought tantalum samples.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Numerical simulation of spall in lead accounting for its occurrence in solid as well as liquid phases

The capabilities of a recently-developed continuum-level model developed for the purpose of predicting the evolution of spall, including the compaction of damaged material, and applicable to the formation of spall in the material that is fully solid as well as material that is locally liquid, are evaluated against empirical data for lead. Here, the model accounts for inertial forces, elastoplastic constitutive behavior, viscosity, and surface tension. Predictions of spall layer thickness are shown to match the empirical data reasonably well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Cryogenic hybrid magnonic circuits based on spalled YIG thin films

Yttrium iron garnet (YIG) magnonics has garnered significant research interest because of the unique properties of magnons (quasiparticles of collective spin excitation) for signal processing. In particular, hybrid systems based on YIG magnonics show great promise for quantum information science due to their broad frequency tunability and strong compatibility with other platforms. However, their broad applications have been severely constrained by substantial microwave loss in the gadolinium gallium garnet (GGG) substrate at cryogenic temperatures. In this study, we demonstrate that YIG thin films can be spalled from YIG/GGG samples. Our approach is validated by measuring hybrid devices comprising superconducting resonators and spalled YIG films, which exhibit anti-crossing features that indicate strong coupling between magnons and microwave photons. Such new capability of separating YIG thin films from GGG substrates via spalling and the integrated superconductor-YIG devices represent a significant advancement for integrated magnonic devices, paving the way for advanced magnon-based coherent information processing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

In Situ MOVPE Smoothing of Acoustically Spalled GaAs for Substrate Reuse

High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.

14 SOLAR ENERGY↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.

III-V↗
DOE OSTI2013

Spall strength and ejecta production of gold under explosively driven shock wave compression

Explosively driven shock wave experiments were conducted to characterize the spall strength and ejecta production of high-purity cast gold samples. The samples were from 0.75 to 1.84 mm thick and 30 mm in diameter. Peak stresses up to 44 GPa in gold were generated using PBX-9501 high explosive. Sample free surface and ejecta velocities were recorded using photonic Doppler velocimetry techniques. Lithium niobate pins were used to quantify the time dependence of the ejecta density and the total ejected mass. An optical framing camera for time-resolved imaging and a single-image x-ray radiograph were used for additional characterization. Free surface velocities exhibited a range of spall strengths from 1.7 to 2.4 GPa (mean: 2.0 ±0.3 GPa). The pullback signals were faint, minimal ringing was observed in the velocity records, and the spall layer continued to decelerate after first pull back. These results suggest finite tensile strength was present for some time after the initial void formation. Ejecta were observed for every sample with a roughened free surface, and the ejecta density increased with increased surface roughness, which was different in every experiment. The total ejected mass is consistent with the missing mass model.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A Path to III-V Photovoltaic Cost Reduction Combining GaAs (211) Spalling with Halide Vapor Phase Epitaxy

This presentation is an overview of the following, Spalling on 211 oriented wafers produces flat surface without faceting: 1) Demonstrated spall on entire 2" wafer; 2) GaAs and GaInP grown on 211 wafers by HVPE; and 3) Promising cell with VOC=1.02 V and IQE-1. Next steps: 1) Grow cell on spalled wafer and 2) Growth studies to improve material and cell on 211 substrates.

14 SOLAR ENERGY↗
DOE OSTI2023

Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates

We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented GaAs has the potential to reduce substrate costs for III-V epitaxy; however, it creates regularly faceted surfaces that may complicate the growth of high-quality III-V optoelectronic devices. We leverage the anisotropic growth rate of HVPE to planarize these faceted GaAs substrates, reducing the surface roughness and degree of faceting. We observe degraded solar cell performance and material quality in sample areas where facets are not completely removed. We used dark lock-in thermography and photoluminescence to identify recombination in areas that were not fully planarized. We used cathodoluminescence to identify the presence of extended defects in these regions, which are correlated with bandgap fluctuations in the material. We hypothesize that these defects were created by strain from compositional fluctuations in ternary alloys grown on the faceted surfaces. This work elucidates the potential issues of solar cells grown on faceted surfaces and builds understanding toward realizing high performance III-V photovoltaics with the cost-reduction potential of controlled spalling.

14 SOLAR ENERGY↗
DOE OSTI2017

Layer transfer of bulk gallium nitride by controlled spalling

Successful wafer-scale layer transfer from high-quality 2-in. diameter bulk gallium nitride substrates was demonstrated using the Controlled Spalling technique. The crystal quality of both the as-fractured bulk substrate and the spalled GaN film was assessed using transmission electron microscopy analysis, and the defect density was below the detection limit (mid 107 cm−2) for both samples. By using the experimentally determined critical conditions for tensile stress and thickness of the Ni stressor layer, an effective fracture toughness KIC of 1.7 MPa m could be calculated for [0001] fracture using the Suo and Hutchinson mechanical model. The resulting in-plane contraction of the GaN film after spalling permitted a novel method for measuring film strain without knowledge of the elastic properties of the material. This was used to measure the Raman E2(high) peak shift coefficient of Δω(cm−1) = 1411ε which, when converted to a stress coefficient (2.95 cm−1/GPa), was in agreement with only one other literature value.

Bedell, S. W.↗
DOE OSTI2022

The role of pre-existing heterogeneities in materials under shock and spall

There has been a challenge for many decades to understand how heterogeneities influence the behavior of materials under shock loading, eventually leading to spall formation and failure. Experimental, analytical, and computational techniques have matured to the point where systematic studies of materials with complex microstructures under shock loading and the associated failure mechanisms are feasible. This is enabled by more accurate diagnostics as well as characterization methods. As interest in complex materials grows, understanding and predicting the role of heterogeneities in determining the dynamic behavior becomes crucial. Early computational studies, hydrocodes, in particular, historically preclude any irregularities in the form of defects and impurities in the material microstructure for the sake of simplification and to retain the hydrodynamic conservation equations. Contemporary computational methods, notably molecular dynamics simulations, can overcome this limitation by incorporating inhomogeneities albeit at a much lower length and time scale. This review discusses literature that has focused on investigating the role of various imperfections in the shock and spall behavior, emphasizing mainly heterogeneities such as second-phase particles, inclusions, and voids under both shock compression and release. Pre-existing defects are found in most engineering materials, ranging from thermodynamically necessary vacancies, to interstitial and dislocation, to microstructural features such as inclusions, second phase particles, voids, grain boundaries, and triple junctions. This literature review explores the interaction of these heterogeneities under shock loading during compression and release. Systematic characterization of material heterogeneities before and after shock loading, along with direct measurements of Hugoniot elastic limit and spall strength, allows for more generalized theories to be formulated. Further, continuous improvement toward time-resolved, in situ experimental data strengthens the ability to elucidate upon results gathered from simulations and analytical models, thus improving the overall ability to understand and predict how materials behave under dynamic loading.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Inverting infrasound data for the seismoacoustic source time functions and surface spall at the Source Physics Experiments Phase II: Dry Alluvium Geology

This report presents the infrasound data recorded as part of the Source Physics Experiment - Phase 2, Dry Alluvium Geology. This experiment, also known colloquially as DAG, consisted of four underground chemical explosions at the Nevada National Security Site. We focus our analysis on only the fourth explosion (DAG-4) as we determined that this was the only event that produced clear source-generated infrasound energy as recorded by the DAG sensors. We analyze the data using two inversion methods. The first method is designed to estimate the point-source seismoacoustic source time functions, and the second inversion method is designed to estimate the first-order characteristics (e.g. horizontal dimensions and maximum amplitude) of the actual spall surface. For both analysis methods, we are able to fit the data reasonably well, with various assumptions of the source model. The estimated seismoacoustic source appears to be a combination of a buried, isotropic explosion with a maximum amplitude of ~2 x 10 9 Nm and a vertically oriented force, applied to the Earth's surface with a maximum amplitude of 4 x 10 7 N. We use the vertically oriented force to simulate surface spall. The estimated spall surface has an approximate radius of ~40 m with a maximum acceleration magnitude in the range of 0.8 to 1.5 m/s/s. These estimates are approximately similar to the measured surface acceleration at the site.

58 GEOSCIENCES↗
DOE OSTI2022

Understanding Phase and Interfacial Effects of Spall Fracture in Additively Manufactured Ti-5Al-5V-5Mo-3Cr

Additive manufactured Ti-5Al-5V-5Mo-3Cr (Ti-5553) is being considered as an AM repair material for engineering applications because of its superior strength properties compared to other titanium alloys. Here, we describe the failure mechanisms observed through computed tomography, electron backscatter diffraction (EBSD), and scanning electron microscopy (SEM) of spall damage as a result of tensile failure in as-built and annealed Ti-5553. We also investigate the phase stability in native powder, as-built and annealed Ti-5553 through diamond anvil cell (DAC) and ramp compression experiments. We then explore the effect of tensile loading on a sample containing an interface between a Ti-6Al-V4 (Ti-64) baseplate and additively manufactured Ti-5553 layer. Post-mortem materials characterization showed spallation occurred in regions of initial porosity and the interface provides a nucleation site for spall damage below the spall strength of Ti-5553. Preliminary peridynamics modeling of the dynamic experiments is described. Finally, we discuss further development of Stochastic Parallel PARticle Kinteic Simulator (SPPARKS) Monte Carlo (MC) capabilities to include the integration of alpha (α)-phase and microstructural simulations for this multiphase titanium alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sound Assisted Low Temperature Spalling: Upscaling and Throughput

In evaluating the state-of-the-art spalling techniques, the key factor that is missing is the control of crack propagation, which is responsible for low quality wafers due to high surface roughness and Total Thickness Variation, TTV. This project has shown that acoustic waves can alter the conditions at the crack tip during thermal spalling, modifying the propagation speed and the stress field around it (stress intensity factor, K). Both factors are directly related to the roughness of the spalled surface, so as we control speed and stress, we can fine-tune the surface roughness through the entire wafer as suggested by Arakawa.

42 ENGINEERING↗
DOE OSTI2014

Three-Dimensional Characterization and Modeling of Microstructural Weak Links for Spall Damage in FCC Metals

Local microstructural weak links for spall damage were investigated using three-dimensional (3-D) characterization in multicrystalline copper samples (grain size ≈ 450 µm) shocked with laser-driven plates at low pressures (2 to 4 GPa). The thickness of samples and flyer plates, approximately 1000 and 500 µm respectively, led to short pressure pulses that allowed isolating microstructure effects on local damage characteristics. Electron Backscattering Diffraction and optical microscopy were used to relate the presence, size, and shape of porosity to local microstructure. The experiments were complemented with 3-D finite element simulations of individual grain boundaries (GBs) that resulted in large damage volumes using crystal plasticity coupled with a void nucleation and growth model. Results from analysis of these damage sites show that the presence of a GB-affected zone, where strain concentration occurs next to a GB, correlates strongly with damage localization at these sites, most likely due to the inability of maintaining strain compatibility across these interfaces, with additional effects due to the inclination of the GB with respect to the shock. Results indicate that strain compatibility plays an important role on intergranular spall damage in metallic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Demonstration of GaAs-Based Photovoltaics on Acoustically Spalled Surfaces Grown by MOCVD

This study demonstrates the potential of sonic lift-off (SLO) technology for repeatable substrate reuse in gallium arsenide (GaAs)–based photovoltaics (PVs), offering a pathway toward cost effective production for terrestrial PV applications. Single-junction GaAs solar cells fabricated on acoustically spalled substrates achieved performance metrics comparable with those grown on standard commercial substrates, exhibiting short-circuit current densities (J sc ) of approximately 26.2–26.4 mA/cm 2 , open-circuit voltages (V oc ) around 1001 mV, fill factors (FFs) of 84%, and AM1.5G efficiencies near 22%. These results confirm that one reuse cycle can be realized without a performance penalty, offering a direct pathway to reducing substrate cost in fabrication. Furthermore, subsequent reuse of the substrates highlighted critical challenges, as devices fabricated from reused substrates showed significant degradation in performance (J sc of 15.5 mA/cm 2 , V oc of 748 mV, FF of 72%, and efficiency of 8%), primarily due to degradation of the epitaxial structure resulting from repeated spalling cycles.

Acoustic Spalling↗
DOE OSTI2015

Cylinder Test Correction for Copper Work Hardening and Spall

As a basis for the corrections to be discussed, an analytical equation is first presented for calculating detonation energy densities from copper wall velocities in the Cylinder test. Steinberg-Guinan work hardening is sufficient for the Cylinder problem, between 1 and 60 GPa, with a change of Y o to 0.10 kJ cm –3 for annealed copper. An air gap correction was the first to be applied, which is a function of the initial air gap width and the tilt angle of the cylinder. Irreversible heat loss was also found to be a small error. Spall is calibrated using new copper gun shot data and this energy is also small. The model up through work hardening agrees with the code, which does not contain heat loss or spall, both of which equal the error of repetitive calculation. In conclusion, the effect of the many additions to the original Gurney energy is shown.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗