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Results for “charge-coupled devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

CCD architecture for spacecraft SAR image processing

A real-time synthetic aperture radar (SAR) image processing architecture amenable to future on-board spacecraft applications is currently under development. Using state-of-the-art charge-coupled device (CCD) technology, low cost and power are inherent features. Other characteristics include the ability to reprogram correlation reference functions, correct for range migration, and compensate for antenna beam pointing errors on the spacecraft in real time. The first spaceborne demonstration is scheduled to be flown as an experiment on a 1982 Shuttle imaging radar mission (SIR-B). This paper describes the architecture and implementation characteristics of this initial spaceborne CCD SAR image processor.

Arens, W. E.↗
NASA NTRS1978

Some performance tests of a microarea AES

An Auger electron spectroscopy (AES) system which has a submicron analysis capability is described. The system provides secondary electron imaging, as well as micro- and macro-area AES. The resolution of the secondary electron image of an oxidized Al contact pad on a charge-coupled device chip indicates a primary beam size of about 1000 A. For Auger mapping, a useful resolution of about 4000 A is reported

Todd, G.↗
NASA NTRS1979

Reliability of imaging CCD's

Report on reliability of imaging charge-coupled devices (CCD's) is intended to augment rather-meager existing information on CCD reliability. Study focuses on electrical and optical performance tests, packaging constraints, and failure modes of one commercially available device (Fairchild CCD121H).

Beal, J. R.↗
NASA NTRS1978

Application of microprocessors to spacecraft synthetic aperture radar processing

A ground-based digital synthetic aperture radar (SAR) processor capable of correlating images from raw spacecraft data at real-time rates is currently under development. The processor design requirements are particularly formidable due to (1) range migration effects resulting from planetary curvature and rotation, (2) antenna beam pointing errors, and (3) variation of the Doppler reference function with changing orbital parameters. Based upon the current effort, this paper describes a candidate real-time on-board SAR processing implementation approach that might evolve for future spacecraft applications. Key features include the use of custom large scale integration (LSI) charge-coupled device (CCD) technology to accomplish the correlation functions and microprocessor technology to effect control.

Arens, W. E.↗
NASA NTRS1979

Autonomous attitude determination systems

A summary of autonomous attitude determination systems is presented by separating it into four areas: types of attitude determination systems which can be automated, a description of the attitude determination problem and its solution, specific types of sensors, and the processor requirements of two automated systems. The sensors used in attitude determination have been characteristically carried on-board the spacecraft in the past, so the major development requirement of automated systems is in the area of on-board processors. It is concluded that standardization of computers is not as beneficial as the standardization of computer architecture and the basic components which go into making them. It is also concluded that charge-coupled devices (CCD) or other solid state star tracking devices offer considerable advantages over the image-dissector type of star tracker.

Lowrie, J. W.↗
NASA NTRS1980

Frequency response of charge transfer in MOS inversion layers

The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.

Lieneweg, U.↗
NASA NTRS1980

Nonmetallic materials contamination studies

In order to impose adequate contamination control requirements in the selection of Wide Field Planetary Camera (WFPC) materials and to develop a data base of potential optical degradation of the WFPC charge-couple device window, the outgassing properties of WFPC materials and the collected volatile condensed material (CVCM) effects on MgF2 transmittance were measured. Changes in the transmittance were monitored in the wavelength region from 115 nm to 300 nm for selected CVCM thicknesses up to 150 nm. The outgassing properties of reemitted CVCM were also studied.

Muscari, J. A.↗
NASA NTRS1981

CCD correlated quadruple sampling processor

A correlated quadruple sampling processor for improved signal-to-noise ratio in the output of a charge-coupled device (CCD) is comprised of: switching means for momentarily clamping a CCD signal line at a first reference level A before a CCD data pulse and then obtaining a first data sample B with respect to the reference A during a CCD data pulse, and storing the positive sample B-A; switching means for momentarily clamping the CCD signal line a second time at the level C during the presence of the CCD data pulse and then obtaining a second data sample D with respect to the reference level C after the CCD data pulse, and storing the negative sample D-C; and means for obtaining the difference between the stored samples +(B-A) and -(D-C), thus increasing the net signal amplitude by a factor of about 2 while the noise would be increased by only a factor of square root of 2 since there will be no correlation in the noise between the double samples +(B-A) and -(D-C) effectively added.

Gaalema, S. D.↗
NASA NTRS1981

Wideband comet camera lens design

A quarter-meter diameter, modified Ritchey-Chretien camera is described for spacecraft-based observation of Halley's Comet. The system will operate over an unusually broad spectral region, from 0.1216 micron (the hydrogen Lyman-alpha line) to 1.1 microns using reflective primary and secondary mirror optics and a thin UV-grade lithium fluoride refractive element as a field corrector near the image plane. The f/12, 3000 mm focal length camera has a 0.4 deg full field of view for operation with a 15 x 15 mm charge-coupled device detector array. The UV-enhanced silicon CCD detector is a 1000 x 1000 array of 15 micron pixels which establishes the system resolution requirement. The optical design and performance are discussed, with an emphasis on the image analysis with respect to pixel resolution elements used for viewing extended objects such as comets.

Huber, E. D.↗
NASA NTRS1982

Detection of the underlying galaxy in the QSO 3C48

Observation of the quasar 3C48 reveals that the faint nebulosity to the north and south of it is dominated by starlight and that the stars have a redshift close to that determined from the broad emission lines in the quasar spectrum. This provides the first direct evidence that a quasar is associated with a galaxy and lies at a distance corresponding to its redshift. The observations were made with a combination of a spectrograph and a charge-coupled device as a detector and took two hours of telescope time. A continuum with absorption features was seen as indicative of a young, hot stellar population. While the redshift of the underlying galaxy is the same as that of the permitted lines in the quasar, it differs from the redshift of the forbidden lines by 500 km/s.

Boroson, T. A.↗
NASA NTRS1976

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1977

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗
NASA NTRS1981

Development of a Shuttle Infrared Telescope Facility /SIRTF/ fine guidance sensor

Fine guidance technology development for the Shuttle Infrared Telescope Facility (SIRTF) centers upon the use of a single multiple-star-tracking sensor to provide the position information necessary to produce three-axis attitude control signals for precision payload pointing. The effort described in this paper is concerned with the development of a fine guidance sensor that employs a high-density charge-coupled imaging device for producing position information signals by using star fields. Multiple star position information produces three-axis position error signals that are used to update inertial reference gyros. The sensor employs advanced position interpolation algorithms to enhance field-of-view resolution and to correct for optical aberrations inherent in spatially chopped star images resulting from the telescope's movable secondary mirror. Operation of the sensor is under the control of a high-performance microcomputer that provides both autonomy and flexibility in a guidance application.

Salomon, P. M.↗
NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗
NASA NTRS1975

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗
NASA NTRS1975

A 190 by 244 charge-coupled area image sensor with interline transfer organization

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.

Walsh, L. R.↗