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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

Neuromorphic computers could overcome efficiency bottlenecks inherent to conventional computing through parallel programming and readout of artificial neural network weights in a crossbar memory array. However, selective and linear weight updates and <10-nanoampere read currents are required for learning that surpasses conventional computing efficiency. We introduce an ionic floating-gate memory array based on a polymer redox transistor connected to a conductive-bridge memory (CBM). Selective and linear programming of a redox transistor array is executed in parallel by overcoming the bridging threshold voltage of the CBMs. Synaptic weight readout with currents <10 nanoamperes is achieved by diluting the conductive polymer with an insulator to decrease the conductance. The redox transistors endure >1 billion write-read operations and support >1-megahertz write-read frequencies.

bio-inspired, energy storage (including batteries ↗
DOE OSTI2020

Na + -gated water-conducting nanochannels for boosting CO 2 conversion to liquid fuels

Robust, gas-impeding water-conduction nanochannels that can sieve water from small gas molecules such as hydrogen (H 2 ), particularly at high temperature and pressure, are desirable for boosting many important reactions severely restricted by water (the major by-product) both thermodynamically and kinetically. Identifying and constructing such nanochannels into large-area separation membranes without introducing extra defects is challenging. We found that sodium ion (Na + )–gated water-conduction nanochannels could be created by assembling NaA zeolite crystals into a continuous, defect-free separation membrane through a rationally designed method. Highly efficient in situ water removal through water-conduction nanochannels led to a substantial increase in carbon dioxide (CO 2 ) conversion and methanol yield in CO 2 hydrogenation for methanol production.

Science & Technology - Other Topics↗
DOE OSTI2021

Emissions in short-gated ns/ps/fs-LIBS for fuel-to-air ratio measurements in methane-air flames

A study of short-gated 10 nanosecond (ns), 100 picosecond (ps), and 100 femtosecond (fs) laser induced breakdown spectroscopy (LIBS) was conducted for fuel-to-air ratio (FAR) measurements in an atmospheric Hencken flame. The intent of the work is to understand which emission lines are available near the optical range in each pulse width regime and which emission ratios may be favorable for generating equivalence ratio calibration curves. The emission spectra in the range of 550–800 nm for ns-LIBS and ps-LIBS are mostly similar with slightly elevated atomic oxygen lines by ps-LIBS. Spectra from fs-LIBS show the lowest continuum background and prominent individual atomic lines, though have significantly weaker ionic emission from nitrogen. A qualitative explanation based on assumed local thermodynamic equilibrium and electron temperatures calculated by the N I I ( 565 n m ) and N I I ( 594 n m ) emissions is presented. In studying line emission ratios for FAR calculation, it is found that H α <#comment/> ( 656 n m ) / N I I ( 568 n m ) is best for FAR measurements with ns-LIBS and remains viable for ps-LIBS, while H α <#comment/> ( 656 n m ) / O I ( 777 n m ) is optimal for the ps-LIBS and fs-LIBS cases. Due to low continuum background and short time delay for spectra collection, fs-LIBS is very promising for high-speed FAR measurements using short-gated LIBS.

Gragston, Mark (ORCID:0000000324698995)↗
DOE OSTI2025

Reliable Determination of Pulses and Pulse-Shape Instability in Ultrashort Laser Pulse Trains Using Polarization-Gating and Transient-Grating Frequency-Resolved Optical Gating Using the RANA Approach

Devices that measure the presence of instability in the pulse shapes in trains of ultrashort laser pulses do not exist, so this task necessarily falls to pulse-measurement devices, like Frequency-Resolved Optical Gating (FROG) and its variations, which have proven to be a highly reliable class of techniques for measuring stable trains of ultrashort laser pulses. Fortunately, multi-shot versions of FROG have also been shown to sensitively distinguish trains of stable from those of unstable pulse shapes by displaying readily visible systematic discrepancies between the measured and retrieved traces in the presence of unstable pulse trains. However, the effects of pulse-shape instability and algorithm stagnation can be indistinguishable, so a never-stagnating algorithm—even when instability is present—is required and is generally important. In previous work, we demonstrated that our recently introduced Retrieved-Amplitude N-grid Algorithmic (RANA) approach produces highly reliable (100%) pulse-retrieval in the second-harmonic-generation (SHG) version of FROG for thousands of sample trains of pulses with stable pulse shapes. Further, it does so even for trains of unstable pulse shapes and thus both reliably distinguishes between the two cases and provides a rough measure of the degree of instability as well as a reasonable estimate of most typical pulse parameters. Here, we perform the analogous study for the polarization-gating (PG) and transient-grating (TG) versions of FROG, which are often used for higher-energy pulse trains. We conclude that PG and TG FROG, coupled with the RANA approach, also provide reliable indicators of pulse-shape instability. In addition, for PG and TG FROG, the RANA approach provides an even better estimate of a typical pulse in an unstable pulse train than SHG FROG does, even in cases of significant pulse-shape instability.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

A Gate-to-Gate Life Cycle Assessment for the CO 2 -EOR Operations at Farnsworth Unit (FWU)

Greenhouse gas (GHG) emissions related to the Farnsworth Unit’s (FWU) carbon dioxide enhanced oil recovery (CO 2 -EOR) operations were accounted for through a gate-to-gate life cycle assessment (LCA) for a period of about 10 years, since start of injection to 2020, and predictions of 18 additional years of the CO 2 -EOR operation were made. The CO 2 source for the FWU project has been 100% anthropogenically derived from the exhaust of an ethanol plant and a fertilizer plant. A cumulative amount of 5.25 × 106 tonnes of oil has been recovered through the injection of 1.64 × 106 tonnes of purchased CO 2 , of which 92% was stored during the 10-year period. An LCA analysis conducted on the various unit emissions of the FWU process yielded a net negative (positive storage) of 1.31 × 106 tonnes of CO 2 equivalent, representing 79% of purchased CO 2 . An optimized 18-year forecasted analysis estimated 86% storage of the forecasted 3.21 × 106 tonnes of purchased CO 2 with an equivalent 2.90 × 106 tonnes of crude oil produced by 2038. Major contributors to emissions were flaring/venting and energy usage for equipment. Improvements on the energy efficiency of equipment would reduce emissions further but this could be challenging. Improvement of injection capacity and elimination of venting/flaring or fugitive gas are methods more likely to be utilized for reducing net emissions and are the cases used for the optimized scenario in this work. This LCA illustrated the potential for the CO 2 -EOR operations in the FWU to store more CO 2 with minimal emissions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2015

Caution Is Required in Interpretation of Mutations in the Voltage Sensing Domain of Voltage Gated Channels as Evidence for Gating Mechanisms

The gating mechanism of voltage sensitive ion channels is generally considered to be the motion of the S4 transmembrane segment of the voltage sensing domains (VSD). The primary supporting evidence came from R→C mutations on the S4 transmembrane segment of the VSD, followed by reaction with a methanethiosulfonate (MTS) reagent. The cys side chain is –SH (reactive form –S−); the arginine side chain is much larger, leaving space big enough to accommodate the MTS sulfonate head group. The cavity created by the mutation has space for up to seven more water molecules than were present in wild type, which could be displaced irreversibly by the MTS reagent. Our quantum calculations show there is major reorientation of three aromatic residues that face into the cavity in response to proton displacement within the VSD. Two phenylalanines reorient sufficiently to shield/unshield the cysteine from the intracellular and extracellular ends, depending on the proton positions, and a tyrosine forms a hydrogen bond to the cysteine sulfur with its side chain –OH. These could produce the results of the experiments that have been interpreted as evidence for physical motion of the S4 segment, without physical motion of the S4 backbone. The computations strongly suggest that the interpretation of cysteine substitution reaction experiments be re-examined in the light of these considerations.

Biochemistry & Molecular Biology↗
DOE OSTI2018

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Charge storage and trapping properties of polymer dielectrics govern the charge densities of adjacent semiconductors and greatly influence the on-off switching voltage (threshold voltage, V th ) of organic field-effect transistors (OFETs) when the polymers are used as gate insulators. Intentional charging of polymer dielectrics in OFETs can change V th and affect the bias stress. We describe a chemical design and fabrication protocol to construct multilayer-stack dielectrics for pentacene-based OFETs using different polystyrene (PS)-based polymers in each layer, with oxidizable N,N-bis(4-methoxyphenyl)anilino (TPAOMe)-substituted styrene copolymers in arbitrary vertical positions in the stacks. Thermal, byproduct-free crosslinking of benzocyclobutene subunits provides integrity to the multilayer structure by preventing dissolution of the previous deposited layer. Neutron reflectivity data verified the multilayer morphology. We compared the Vth shift before and after charging the stacks by application of ±100V across 0.5-1 µm total film thicknesses. Bias stress was the dominant effect in bilayer devices with a TPAOMe layer in contact with the pentacene, indicated by the direction of V th shift associated with either polarity of external electric field. In structures with no TPAOMe subunit in contact with the pentacene, when charging with -100V on top of the source and drain electrodes, electron injection from pentacene to dielectric was the major charging mechanism, again consistent with the bias stress direction. When charging with +100V, bilayer devices without TPAOMe showed little change in V th , suggesting there was no bias stress effect or charge injection in these devices for this charging polarity. For the bilayer devices with the TPAOMe layer in the bottom, and the trilayer devices with TPOMe in the middle, when +100V was applied, the V th shifts were opposite those expected from bias stress. Dipole formation or partial ionization of chargeable groups at the interface between the dielectric layers are likely polarization mechanisms in these cases. A simple analytical model supports the plausibility of these mechanisms. This work provides examples of both stabilization and shifting of V th , and therefore controlling charge carrier density, in semiconductors overlying the dielectric multilayers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Comparison of implosion core metrics: A 10 ps dilation X-ray imager vs a 100 ps gated microchannel plate [Comparison of implosion core shape observations, 10 ps dilation X-ray imager vs 100 ps gated microchannel plate]

The dilation x-ray imager (DIXI) is a high-speed x-ray framing camera that uses the pulse-dilation technique to achieve a temporal resolution of less than 10 ps. This is a 10× improvement over conventional framing cameras currently employed on the National Ignition Facility (NIF) (100 ps resolution), and otherwise only achievable with 1D streaked imaging. A side effect of the dramatically reduced gate width is the comparatively lower detected signal level. Therefore we implement a Poisson noise reduction with non-local principal component analysis method to improve the robustness of the DIXI data analysis. Furthermore, we present results on ignition-relevant experiments at the NIF using DIXI. In particular we focus on establishing that/when DIXI gives reliable shape metrics (P 0 , P 2 and P 4 Legendre modes, and their temporal evolution/swings).

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1972

Gate protective device for insulated gate field-effect transistors

Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.

Sunshine, R. A.↗
DOE OSTI2020

Gating of Hydrophobic Nanopores with Large Anions

In this report, understanding ion transport in nanoporous materials is critical to a wide variety of energy and environmental technologies, ranging from ion-selective membranes, drug delivery, and biosensing, to ion batteries and supercapacitors. While nanoscale transport is often described by continuum models that rely on a point charge description for ions and a homogeneous dielectric medium for the solvent, here, we show that transport of aqueous solutions at a hydrophobic interface can be highly dependent on the size and hydration strength of the solvated ions. Specifically, measurements of ion current through single silicon nitride nanopores that contain a hydrophobic-hydrophilic junction show that transport properties are dependent not only on applied voltage but also the type of anion. We find that in Cl - -contained solutions the nanopores only conducted ionic current above a negative voltage threshold. On the other hand, introduction of large polarizable anions, such as Br - and I - , facilitated the pore wetting, making the pore conductive at all examined voltages. Molecular dynamics simulations revealed that the large anions, Br - and I - , have a weaker solvation shell compared to that of Cl - , and consequently were prone to migrate from the aqueous solution to the hydrophobic surface, leading to the anion accumulation responsible for pore wetting. The results are essential for designing nanoporous systems that are selective to ions of the same charge, for realization of ion-induced wetting in hydrophobic pores, as well as for fundamental understanding on the role of ion hydration shell on the properties of solid/liquid interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe 2

The effects of dimensional reduction and ion intercalation on superconductivity (SC) in the presence of charge density waves (CDWs) in two-dimensional crystals of 2H-TaSe 2 were characterized. We prepared atomically thin crystals by mechanical exfoliation and performed electrical transport measurements on devices made by photolithography. The superconducting transition temperature ($T$ $^{SC}_{c}$) was found to increase monotonically as the thickness decreased, changing from 0.14 K in the bulk to higher than 1.4 K for a 3-nm-thick crystal. Here, the temperature dependence of upper critical field was found to be anomalous. The CDW transition temperature ($T$ $^{CDW}_{c}$) was found to decrease, but to a less extent than $T$ $^{SC}_{c}$, from 120 K in the bulk to around 113 K for the 3-nm-thick crystal. In addition, ion intercalation was found to increase $T$ $^{SC}_{c}$ and suppress $T$ $^{CDW}_{c}$ in an atomically thin crystal of 2H-TaSe 2 . The implications of these findings are discussed. We suggest that dimensional reduction and ion intercalation are potentially effective ways to engineer material properties for layered transition metal chalcogenides.

2D material↗