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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4

One–Step Fabrication of Nanocrystalline Nanonetwork SnO 2 Gas Sensors by Integrated Multilaser Processing

An integrated multilaser process is developed to fabricate nanocrystalline nanonetwork SnO 2 gas sensors in one integrated procedure, which combines electrodes fabrication, nanomaterials deposition, and postannealing. Interdigit electrodes are fabricated on an Au-coated fused silica substrate using a picosecond (ps) laser, which ablates the Au coating from the back of the substrate to pattern the electrodes. A novel transmitted Ps laser deposition (TPLD) process is designed to deposit SnO 2 nanonetwork on the interdigit electrodes with precise deposition area control under a close target-to-substrate distance. The obtained SnO 2 nanonetwork is in situ postannealed by a CO 2 laser to improve the crystallinity, while the nano morphology and grain size keep intact. To investigate the morphology and formation process of the nanonetwork, the microstructure of the laser-deposited SnO 2 layer is characterized. As a result, the crystallization control of CO 2 laser annealing is investigated through analyzing the Raman spectrum, X-ray diffraction (XRD) patterns, and lattice structures of the samples. By exposed to H 2 atmosphere, the fabricated gas sensor is demonstrated for H 2 monitoring.

08 HYDROGEN↗

Printed-Circuit Tape Measures For X-Ray Inspections

Known pattern impressed on x-ray image for reference. Tapes made by flexible-printed-circuit technology provides identification and position references for x-ray images of weld joints. Proposed tapes consist of etched copper patterns on flexible substrates. X-rays record pattern of tape on film beneath butt-welded panels. Pattern becomes convenient reference for analysis and digitization of x-ray image.

Sullivan, John E., Jr.↗

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗

Systems and methods lattice spray substrates for mass spectrometry

The present disclosure relates to a lattice substrate adapted for use in direct ionization mass spectrometry. The substrate may have a plurality of tessellated unit cells forming an integral structure. Each tessellated unit cell may have a dimension of no more than about 1.5 mm and may include a plurality of pores arranged in an ordered pattern. The substrate may further include a form factor suitable for use with a direct ionization mass spectrometry system.

Prieto Conaway, Maria C.↗

Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

Davis, M. F.↗

Design of nematic liquid crystals to control microscale dynamics

The dynamics of small particles, both living such as swimming bacteria and inanimate, such as colloidal spheres, has fascinated scientists for centuries. If one could learn how to control and streamline their chaotic motion, that would open technological opportunities in the transformation of stored or environmental energy into systematic motion, with applications in micro-robotics, transport of matter, guided morphogenesis. This review presents an approach to command microscale dynamics by replacing an isotropic medium with a liquid crystal. Orientational order and associated properties, such as elasticity, surface anchoring, and bulk anisotropy, enable new dynamic effects, ranging from the appearance and propagation of particle-like solitary waves to self-locomotion of an active droplet. By using photoalignment, the liquid crystal can be patterned into predesigned structures. In the presence of the electric field, these patterns enable the transport of solid and fluid particles through nonlinear electrokinetics rooted in anisotropy of conductivity and permittivity. Director patterns command the dynamics of swimming bacteria, guiding their trajectories, polarity of swimming, and distribution in space. This guidance is of a higher level of complexity than a simple following of the director by rod-like microorganisms. Namely, the director gradients mediate hydrodynamic interactions of bacteria to produce an active force and collective polar modes of swimming. The patterned director could also be engraved in a liquid crystal elastomer. When an elastomer coating is activated by heat or light, these patterns produce a deterministic surface topography. The director gradients define an activation force that shapes the elastomer in a manner similar to the active stresses triggering flows in active nematics. Finally, the patterned elastomer substrates could be used to define the orientation of cells in living tissues. The liquid-crystal guidance holds a major promise in achieving the goal of commanding microscale active flows.

36 MATERIALS SCIENCE↗

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.

14 SOLAR ENERGY↗

Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures

Ferroelectric domain walls, topological entities separating domains of uniform polarization, are promising candidates as active elements for nanoscale memories. In such applications, controlled nucleation and stabilization of domain walls are critical. In this work, using in situ transmission electron microscopy and phase-field simulations, a controlled nucleation of vertically oriented 109° domain walls in (110)-oriented BiFeO 3 (BFO) thin films is reported. In the switching experiment, reversed domains that are nucleated preferentially at the nanoscale edges of the “crest and sag” pattern-like electrode under external bias subsequently grow into a stable stripe configuration. In addition, when triangular pockets (with an in-plane polarization component) are present, these domain walls are pinned to form stable flux-closure domains. Phase field simulations show that i) field enhancement at the edges of the electrode causes site-specific domain nucleation, and ii) the local electrostatics at the domain walls drives the formation of flux closure domains, thus stabilizing the striped pattern, irrespective of the initial configuration. The results demonstrate how flux closure pinning can be exploited in conjunction with electrode patterning and substrate orientation to achieve a desired topological defect configuration. These insights constitute critical advancements in exploiting domain walls in next generation ferroelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dispersion of sulfur creates a valuable new growth medium formulation that enables earlier sulfur oxidation in relation to iron oxidation in Acidithiobacillus ferrooxidans cultures

Abstract Acidithiobacillus ferrooxidans is an acidophilic chemolithoautotroph that is commonly reported to exhibit diauxic population growth behavior where ferrous iron is oxidized before elemental sulfur when both are available, despite the higher energy content of sulfur. We have discovered sulfur dispersion formulations that enables sulfur oxidation before ferrous iron oxidation. The oxidation of dispersed sulfur can lower the culture pH within days below the range where aerobic ferrous iron oxidation can occur. Thus, ferric iron reduction can be observed quickly which had previously been reported over extended incubation periods with untreated sulfur. Therefore, we demonstrate that this substrate utilization pattern is strongly dependent on the cell loading in relation to sulfur concentration, sulfur surface hydrophobicity, and the pH of the culture. Our dispersed sulfur formulation, lig‐sulfur, can be used to support the rapid antibiotic selection of plasmid‐transformed cells, which is not possible in liquid cultures where ferrous iron is the main source of energy for these acidophiles. Furthermore, we find that media containing lig‐sulfur supports higher production of green fluorescent protein compared to media containing ferrous iron. The use of dispersed sulfur is a valuable new tool for the development of engineered A. ferrooxidans strains and it provides a new method to control iron and sulfur oxidation behaviors.

Inaba, Yuta↗

Ionic complexation of endblock-sulfonated thermoplastic elastomers and their physical gels for improved thermomechanical performance

Thermoplastic elastomers (TPEs) composed of nonpolar triblock copolymers constitute a broadly important class of (re)processable network-forming macromolecules employed in ubiquitous commercial applications. Physical gelation of these materials in the presence of a low-volatility oil that is midblock-selective yields tunably soft TPE gels (TPEGs) that are suitable for emergent technologies ranging from electroactive, phase-change and shape-memory responsive media to patternable soft substrates for flexible electronics and microfluidics. Many of the high-volume TPEs used for these purposes possess styrenic endblocks that are inherently limited by a relatively low glass transition temperature. To mitigate this shortcoming, we sulfonate and subsequently complex (and physically crosslink) the endblocks with trivalent Al3+ ions. Doing so reduces the effective hydrophilicity of the sulfonated endblocks, as evidenced by water uptake measurements, while concurrently enhancing the thermomechanical stability of the corresponding TPEGs. Chemical modification results, as well as morphological and property development, are investigated as functions of the degree of sulfonation, complexation and TPEG composition. (C) 2020 Published by Elsevier Inc.

36 MATERIALS SCIENCE↗

A High-Quality Genome-Scale Model for Rhodococcus opacus Metabolism

Rhodococcus opacus is a bacterium that has a high tolerance to aromatic compounds and can produce significant amounts of triacylglycerol (TAG). Here, we present iGR1773, the first genome-scale model (GSM) of R. opacus PD630 metabolism based on its genomic sequence and associated data. The model includes 1773 genes, 3025 reactions, and 1956 metabolites, was developed in a reproducible manner using CarveMe, and was evaluated through Metabolic Model tests (MEMOTE). We combine the model with two Constraint-Based Reconstruction and Analysis (COBRA) methods that use transcriptomics data to predict growth rates and fluxes: E-Flux2 and SPOT (Simplified Pearson Correlation with Transcriptomic data). Growth rates are best predicted by E-Flux2. Flux profiles are more accurately predicted by E-Flux2 than flux balance analysis (FBA) and parsimonious FBA (pFBA), when compared to 44 central carbon fluxes measured by 13C-Metabolic Flux Analysis (13C-MFA). Under glucose-fed conditions, E-Flux2 presents an R2 value of 0.54, while predictions based on pFBA had an inferior R2 of 0.28. We attribute this improved performance to the extra activity information provided by the transcriptomics data. For phenol-fed metabolism, in which the substrate first enters the TCA cycle, E-Flux2’s flux predictions display a high R2 of 0.96 while pFBA showed an R2 of 0.93. We also show that glucose metabolism and phenol metabolism function with similar relative ATP maintenance costs. These findings demonstrate that iGR1773 can help the metabolic engineering community predict aromatic substrate utilization patterns and perform computational strain design.

Roell, Garrett W.↗

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗

Fungal Hyphosphere Microbiomes Are Distinct from Surrounding Substrates and Show Consistent Association Patterns

Fungi and bacteria are the most abundant and diverse organisms in soils (perhaps more so than any other habitat on earth), and together these microorganisms contribute to broad soil ecosystem processes. There is a suite of bacteria that appears consistently within the physical space called the hyphosphere, the area of influence surrounding fungal hyphae.

59 BASIC BIOLOGICAL SCIENCES↗

Size-Resolved Chemical Composition of Particles Collected Using STAC at the Ground Site During the SAIL Campaign in Gunnison, Colorado

Aerosol particles were collected using a four-stage Size and Time-resolved Aerosol Collector (STAC) during the SAIL field campaign. Each stage of STAC separates particles into distinct aerodynamic size fractions with 50% cut-off diameters: Stage A: 2.27 µm Stage B: 0.615 µm Stage C: 0.421 µm Stage D: 0.119 µm Each stage provides both size- and time-resolved sampling, enabling investigation of particle composition across different atmospheric regimes. Only a subset of samples was selected for analysis based on prevailing meteorological conditions (e.g., temperature, humidity, and air-mass influence) to capture representative aerosol types under distinct weather patterns. Collected substrates were first examined under Scanning Electron Microscopy (SEM) to evaluate particle loading, morphology, and spatial distribution. Subsequently, Computer-Controlled Scanning Electron Microscopy with Energy-Dispersive X-ray Spectroscopy (CCSEM/EDX) was performed to obtain size-resolved elemental composition of individual particles. A rule-based classification scheme was applied to categorize particles into major compositional groups (e.g., biological, carbonaceous, dust, sulfate, Na-rich, and mixed types). This dataset provides high-resolution morphological and chemical information on atmospheric particles collected during the SAIL campaign, offering insights into the influence of meteorology on aerosol composition and mixing state.

Size and Time-resolved Aerosol Collector↗

X-ray/VUV transmission gratings for astrophysical and laboratory applications

This paper describes the techniques used to fabricate deep-submicron-period transmission gratings for astrophysical and laboratory applications, with special attention given to the major steps involved in the transmission grating fabrication. These include the holographic lithography procedure used to pattern the master transmission grating, the fabrication of X-ray mask, the X-ray lithography step used to transfer the X-ray mask pattern into a substrate, and the electroplating of the substrate to form the final grating pattern. The various ways in which transmission gratings can be used in X-ray and VUV spectroscopy are discussed together with some examples of experiments reported in the literature.

Schattenburg, M. L.↗

Near-infrared cathodoluminescence imaging of defect distributions in In(0.2)Ga(0.8)As/GaAs multiple quantum wells grown on prepatterned GaAs

The defect distribution in a highly strained In(0.2)Ga(0.8)As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near IR. By spatially correlating the luminescence arising from the MQW exciton recombination (950 nm) with the longer wavelength (1000-1200 nm) luminescence arising from the defect-induced recombination, it is demonstrated that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

Rich, D. H.↗

Near-net-shape manufacturing: Spray-formed metal matrix composites and tooling

Spray forming is a materials processing technology in which a bulk liquid metal is converted to a spray of fine droplets and deposited onto a substrate or pattern to form a near-net-shape solid. The technology offers unique opportunities for simplifying materials processing without sacrificing, and oftentimes substantially improving, product quality. Spray forming can be performed with a wide range of metals and nonmetals, and offers property improvements resulting from rapid solidification (e.g. refined microstructures, extended solid solubilities and reduced segregation). Economic benefits result from process simplification and the elimination of unit operations. The Idaho National Engineering Laboratory is developing a unique spray-forming method, the Controlled Aspiration Process (CAP), to produce near-net-shape solids and coatings of metals, polymers, and composite materials. Results from two spray-accompanying technical and economic benefits. These programs involved spray forming aluminum strip reinforced with SiC particulate, and the production of tooling, such as injection molds and dies, using low-melting-point metals.

Mchugh, Kevin M.↗

Application of Rapid Prototyping and Wire Arc Spray to the Fabrication of Injection Mold Tools (MSFC Center Director's Discretionary Fund)

Rapid prototyping (RP) is a layer-by-layer-based additive manufacturing process for constructing three-dimensional representations of a computer design from a wax, plastic, or similar material. Wire arc spray (WAS) is a metal spray forming technique, which deposits thin layers of metal onto a substrate or pattern. Marshall Space Flight Center currently has both capabilities in-house, and this project proposed merging the two processes into an innovative manufacturing technique, in which intermediate injection molding tool halves were to be fabricated with RP and WAS metal forming.

Cooper, K. G.↗