SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single-event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer.
The radiation resistance of polymeric and composite materials to space radiation is currently based on irradiating materials with Co-60 gamma-radiation to the equivalent total ionizing dose (TID) expected during mission. This is an approximation since gamma-radiation is not truly representative of the particle species; namely, Solar Particle Event (SPE) protons and Galactic Cosmic Ray (GCR) nucleons, encountered in space. In general, the SPE and GCR particle energies are much higher than Co-60 gamma-ray photons, and since the particles have mass, there is a displacement effect due to nuclear collisions between the particle species and the target material. This effort specifically bridges the gap between estimated service lifetimes based on decades old Co-60 gamma-radiation data, and newer assessments of what the service lifetimes actually are based on irradiation with particle species that are more representative of the space radiation environment.
Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.
Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.
This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.
X-rays are an energetic and penetrating form of ionizing electromagnetic radiation, which can degrade NASA flight hardware. The main concern posed by such radiation is degradation of active electronic devices and, in some cases, diodes. Non-electronic components are only damaged at doses that far exceed the point where any electronic device would be destroyed. For the purposes of this document, flight hardware can be taken to mean an entire instrument, the flight electronics within the instrument or the individual microelectronic devices in the flight electronics. This document will discuss and describe the ways in which NASA flight hardware might be exposed to x-rays, what is and isn't a concern, and how to tell the difference. First, we must understand what components in flight hardware may be vulnerable to degradation or failure as a result of being exposed to ionizing radiation, such as x-rays. As stated above, bulk materials (structural metals, plastics, etc.) are generally only affected by ionizing radiation at very high dose levels. Likewise, passive electronic components (e.g. resistors, capacitors, most diodes) are strongly resistant to exposure to x-rays, except at very high doses. The main concerns arise when active components, that is, components like discrete transistors and microelectronic devices, are exposed to ionizing radiation. Active components are designed to respond to minute changes in currents and voltages in the circuit. As such, it is not surprising that exposure to ionizing radiation, which creates ionized and therefore electrically active particles, may degrade the way the hardware performs. For the most part, the mechanism for this degradation is trapping of the charges generated by ionizing radiation by defects in dielectric materials in the hardware. As such, the degree of damage is a function of both the quantity of ionizing radiation exposure and the physical characteristics of the hardware itself. The metric that describes the level of exposure to ionizing radiation is total ionizing dose (TID). The unit of TID is the rad, which is defined as 100 ergs absorbed per gram of material. Dose can be expressed in other units, for example grays (gy), where 1 gy = 100 rads. The actual fluence of radiation needed to deliver a rad depends on the absorbing material, so units of dose are usually stated in reference to the material of interest. That is, for microelectronic devices, the unit of dose is generally rad (Si) or rad (SiO2). However, the definition of absorbed dose in this fashion has the advantage that the type of radiation causing the ionization can be normalized so that a realistic and adequate comparison can be made. The sensitivity of microelectronic parts to TID varies over many orders of magnitude. (Note: Doses to humans are typically expressed in rems-or roentgen-equivalent-man-which measures tissue damage, and depends on the type of radiation, as well as the dose in rads.) Thus far, the "softest" parts tested at NASA showed damage at 500 rads (Si), while parts that are radiation-hardened by design can remain functional to doses on the order of 107 rads (Si). This broad range of sensitivity highlights one of the most important considerations when considering the effects of radiation on electronic parts: In order to determine whether a radiation exposure is a concern for a particular part, one must understand the technologies used in the part and their vulnerabilities to TID damage. A NASA radiation expert should be consulted to obtain such information.
We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.
The purpose of this lessons learned is to communicate the utility of shielding in small spacecraft planning for the support of mission assurance and reliability. Numerous SmallSats have been flying in polar low earth orbit for scientific, communications, technology demonstrations, and imaging with academic, commercial, and government interests. Shielding has been part of mission assurance and reliability from the advent of long duration spacecraft missions. The Shields-1 CubeSat has been operating in polar low earth orbit since 16 December 2018 with atomic number (Z)-grade radiation shielding and demonstrates shielding effectiveness. Shields-1 has collected a representative example of solar minimum data in 2019 with 8 Teledyne dosimeters over varying shielding effectiveness. It serves as current experimental data and has been compared with NOVICE Shielding estimates using the AP8 –AE8 trapped radiation model with the Shields-1 CAD and generic CubeSat 3 unit (U) models. Using NOVICE model radiation analysis coding, the shielding effectiveness's, based on a generic CubeSat 3U structure with 4 electronic boards, were estimated for aluminum wall thicknesses ranging from 0.204 cmto4.44 cm (0.550 g/cm2–12.0 g/cm2) thick aluminum. For modeled polar orbiting spacecraft, solar maximum total ionizing dose (TID)increases by nearly a magnitude for thin-walled aluminum 0.550g/cm2-0.686 g/cm2(0.204 cm –0.254 cm) typical CubeSat structures. The shielding effectiveness by NOVICE Sigma estimates, which is a shielding sphere approximation around a detector, showed a linear relationship with wall thickness, which increased over the wall thickness by a ratio of 1.43 determined by linear regression analysis. Using NOVICE Adjoint Monte-Carlo Modeling of solar minimum and solar maximum with the inclusion of a worst-case solar particle event over a one year mission without geomagnetic shielding, the TID for minimum and maximum conditions for a generic 3U with a wall thickness of 0.254 cm is 158 RAD and 1540 RAD, respectively. The modeled total solar maximum TID is over estimated, because at low orbital latitudes a spacecraft will have shielding from Earth's magnetic field. However, TID will still be significant at high latitudes over the poles, where a spacecraft is exposed in a solar particle event. In contrast, to a thin walled generic 3U CubeSat, Shields-1 electronics enclosure has a shielding effectiveness of 21.3 g/cm2from NOVICE Sigma modeling and is expected to show reduced total ionizing dose increases during the present active Solar Cycle 25 period. Because solar particle events during solar maximum increase TID on electronic parts with thin-walled shielding in short periods of time, it is a mission assurance and reliability consideration on the spacecraft’s mission value versus adding shielding for risk reduction of premature spacecraft or instrument payload loss. Since the volumes of many instruments and system electronics have reduced with small spacecraft, shielding material costs and weight penalties have diminished. A small spacecraft project budget and schedule may limit traditional radiation-hardened part use and radiation testing requirements, where shielding can contribute to mission assurance and reliability with reduced costs.
CubeSats have become an attractive platform for universities, industry, and government space missions because they are cheaper and quicker to develop than full-scale satellites. One way CubeSats keep costs low is by using commercial off-the-shelf parts (COTS) instead of space-qualified parts. Space-qualified parts are often costlier, larger, and consume more power than their commercial counterparts precluding their use within the CubeSat form-factor. Given typical power budgets, monetary budgets, and timelines for CubeSat missions, conventional radiation hardness assurance, like the use of space-qualified parts and radiation testing campaigns of COTS parts, is not practical. Instead, a system-level approach to radiation effects mitigation is needed. In this paper an assurance case for a system-level approach to mitigate radiation effects of a CubeSat science experiment is expressed using Goal Structuring Notation (GSN), a graphical argument standard. The case specifically looks at three main mitigation strategies for the radiation environment: total ionizing dose (TID) screening of parts, detection and recovery from single-event latch-ups (SEL) and single-event functional interrupts (SEFI). The graphical assurance case presented makes a qualitative argument for the radiation reliability of the CubeSat experiment using part and system-level mitigation strategies.
The purpose of this lessons learned paper is to communicate the utility of shielding in small spacecraft planning for the support of mission assurance and reliability. Numerous SmallSats have been flying in polar low Earth orbit for science, communications, technology demonstrations, and imaging with academic, commercial, and government interests. Shielding has been part of mission assurance and reliability from the advent of long duration spacecraft missions. The Shields-1 CubeSat has been operating in polar low Earth orbit since 16 December 2018 with atomic number (Z)-grade radiation shielding and demonstrates shielding effectiveness. Shields-1 has collected a representative example of solar minimum data in 2019 with eight Teledyne µDosimeters over varying shielding effectivenesses. It serves as current experimental data and has been compared with NOVICE Shielding estimates using the AP8 – AE8 trapped radiation model with the Shields-1 CAD and generic CubeSat three unit (3U) models. Using NOVICE model radiation analysis coding, the shielding effectivenesses, based on a generic CubeSat 3U structure with four electronic boards, were estimated for aluminum wall thicknesses ranging from 0.204 cm to 4.44 cm (0.550 g/cm 2 to 12.0 g/cm 2 ). For modeled polar orbiting spacecraft, solar maximum total ionizing dose (TID) increases by nearly a magnitude for thin-walled aluminum 0.550-g/cm 2 - 0.686-g/cm 2 (0.204-cm – 0.254-cm) typical CubeSat structures. The shielding effectiveness estimated by NOVICE Sigma, which is a shielding sphere approximation around a detector, showed a linear relationship with wall thickness, which increased over the wall thickness by a ratio of 1.43 determined by linear regression analysis. Using NOVICE Adjoint Monte-Carlo Modeling of solar minimum and solar maximum with the inclusion of a worst-case solar particle event over a one-year mission without geomagnetic shielding, the TID for minimum and maximum conditions for a generic 3U with a wall thickness of 0.254 cm is 158 RAD and 1540 RAD, respectively. The modeled total solar maximum TID is over estimated, because at low orbital latitudes a spacecraft will have shielding from the Earth’s magnetic field. However, TID will still be significant at high latitudes over the poles, where a spacecraft is exposed in a solar particle event. In contrast to a thin-walled generic 3U CubeSat, the Shields-1 electronics enclosure has a shielding effectiveness of 21.3 g/cm 2 from NOVICE Sigma modeling and is expected to show reduced total ionizing dose increases during the present active Solar Cycle 25 period. Because solar particle events during solar maximum increase TID on electronic parts with thin-walled shielding in short periods of time, it is a mission assurance and reliability consideration on the mission value of the spacecraft versus adding shielding for risk reduction of premature spacecraft or instrument payload loss. Since the volumes of many instruments and system electronics have reduced with small spacecraft, shielding material costs and weight penalties have diminished. A small spacecraft project budget and schedule may limit traditional radiation-hardened part use and radiation testing requirements, where shielding can contribute to mission assurance and reliability with reduced costs.
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.
This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.
Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.
The purpose of this testing was to characterize the InterFET Corporation U309 for total dose response. This test shall serve as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. The U309 is a discrete Junction Field Effect Transistor (JFET). High dose rate (HDR) irradiations were performed in this test so that the device susceptibility to Total Ionizing Dose (TID) could be determined.