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At least 73 records · Page 4

Measurements of Single Event Upset in ATLAS IBL

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

47 OTHER INSTRUMENTATION↗

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗

Current Radiation Issues for Programmable Elements and Devices

The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.

Katz, Richard↗

A Compendium of Recent Optocoupler Radiation Test Data

We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Label, K. A.↗

FPGAs in Space Environment and Design Techniques

This viewgraph presentation gives an overview of Field Programmable Gate Arrays (FPGA) in the space environment and design techniques. Details are given on the effects of the space radiation environment, total radiation dose, single event upset, single event latchup, single event transient, antifuse technology and gate rupture, proton upsets and sensitivity, and loss of functionality.

Katz, Richard B.↗

The Effectiveness of TAG or Guard-Gates in SET Suppression Using Delay and Dual-Rail Configurations at 0.35 microns

Design options for decreasing the susceptibility of integrated circuits to Single Event Upset (SEU) fall into two categories: (1) increasing the critical charge to cause an upset at a particular node, and (2) employing redundancy to mask or correct errors. With decreasing device sizes on an Integrated Circuit (IC), the amount of charge required to represent a logic state has steadily reduced. Critical charge methods such as increasing drive strength or increasing the time required to change state as in capacitive or resistive hardening or delay based approaches extract a steadily increasing penalty as a percentage of device resources and performance. Dual redundancy is commonly assumed only to provide error detection with Triple Modular Redundancy (TMR) required for correction, but less well known methods employ dual redundancy to achieve full error correction by voting two inputs with a prior state to resolve ambiguity. This requires special circuits such as the Whitaker latch [1], or the guard-gate [2] which some of us have called a Transition AND Gate (TAG) [3]. A 2-input guard gate is shown in Figure 1. It is similar to a Muller Completion Element [4] and relies on capacitance at node "out" to retain the prior state when inputs disagree, while eliminating any output buffer which would be susceptible to radiation strikes. This paper experimentally compares delay based and dual rail flip-flop designs wherein both types of circuits employ guard-gates to optimize layout and performance, and draws conclusions about design criteria and suitability of each option. In both cases a design goal is protection against Single Event Transients (SET) in combinational logic as well as SEU in the storage elements. For the delay based design, it is also a goal to allow asynchronous clear or preset inputs on the storage elements, which are often not available in radiation tolerant designs.

Shuler, Robert L.↗

SEU and Test Considerations for FPGA Devices

This viewgraph presentation provides an overview of Field Programmable Gate Arrays (FPGAs), what they are, implementations in space missions, and current available technologies. Single Event Upsets (SEUs) and Single Event Transients (SETs) are discussed in relation to their effects on FPGAs. Testing goals, considerations, and data analysis are reviewed.

Berg, Malanie↗

Total Dose Effects on Error Rates in Linear Bipolar Systems

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect SET system error rates in a radiation environment. If the transients are broadened by TID, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.

Buchner, Stephen↗

Single Event Effects (SEE) Testing of Embedded DSP Cores within Microsemi RTAX4000D Field Programmable Gate Array (FPGA) Devices

Motivation for this work is: (1) Accurately characterize digital signal processor (DSP) core single-event effect (SEE) behavior (2) Test DSP cores across a large frequency range and across various input conditions (3) Isolate SEE analysis to DSP cores alone (4) Interpret SEE analysis in terms of single-event upsets (SEUs) and single-event transients (SETs) (5) Provide flight missions with accurate estimate of DSP core error rates and error signatures.

Perez, Christopher E.↗

Cassini at Saturn Proximal Orbits - Attitude Control Challenges

The Cassini mission at Saturn will come to an end in the spring and summer of 2017 with a series of 22 orbits that will dip inside the rings of Saturn. These are called proximal orbits and will conclude with spacecraft disposal into the atmosphere of the ringed world on September 15, 2017. These unique orbits that cross the ring plane only a few thousand kilometers above the cloud tops of the planet present new attitude control challenges for the Cassini operations team. Crossing the ring plane so close to the inner edge of the rings means that the Cassini orientation during the crossing will be tailored to protect the sensitive electronics bus of the spacecraft. This orientation will put the sun sensors at some extra risk so this paper discusses how the team prepares for dust hazards. Periapsis is so close to the planet that spacecraft controllability with RCS thrusters needs to be evaluated because of the predicted atmospheric torque near closest approach to Saturn. Radiation during the ring plane crossings will likely trigger single event transients in some attitude control sensors. This paper discusses how the attitude control team deals with radiation hazards. The angular size and unique geometry of the rings and Saturn near periapsis means that star identification will be interrupted and this paper discusses how the safe mode attitude is selected to best deal with these large bright bodies during the proximal orbits.

Huygens↗

SEE Test Report for Arizona Microtek AZ88923 High Speed Limiting Post Amplifier

The primary purpose of this testing is to characterize the Texas Instruments AZ88923 post amplifier for susceptibility to single-event latchup (SEL) and other destructive Single-Event Effects (SEE). These data will be used to assess the destructive SEE risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the post amplifier to single-event transients (SET) and other nondestructive SEE. In particular, the loss-of-signal feature could give rise to some significant anomalies. However, it is not used on OLA.

Raymond Ladbury↗

Signal and Power Integrity Design Methodology for High-Performance Flight Computing Systems

Computing capabilities of space systems have in-creased onboard performance by orders of magnitude with the use of radiation-tolerant field-programmable gate arrays (FPGA)and processors. The incorporation of signal and power integrity analysis with printed circuit board (PCB) design in reliable computing architectures for space systems has become critical to enable future mission capabilities. Developers launch high-performance processors into a breadth of orbits and missions, running varying applications that create challenges for designing reliable computing hardware. Specifically, for these designs, academic and industry research has focused on component radiation performance, fault mitigation, and reliable architectures. How-ever, other design parameters including electromagnetic interference (EMI), PCB stackup, signal integrity (SI), voltage regulator module (VRM) design, and power distribution network (PDN)are often deprioritized or disregarded as the design matures. Since these characteristics are becoming more significant in high-performance processor designs, this research presents a hardware design and analysis methodology for high-performance, space-computing systems that focuses on a holistic design approach and PDN reliability. While these challenges exist across all space hardware, the reduced PCB dimensions imposed by SmallSats and CubeSats introduce additional hurdles, specifically to VRM and decoupling design. By examining the relationship between the PDN and radiation performance, an analytical relationship is developed that incorporates Total Ionizing Dose and Single-Event Transients to ensure reliability throughout the mission duration. The presented design methodology is applied to the SpaceCube v3.0 Mini, an FPGA-based on-board science data processing system developed at NASA Goddard Space Flight Center.

Advanced avionics↗

Single-Event Effect Testing of the Analog Devices AD8041ARZ Operational Amplifier

This study was undertaken to determine the single event transient distribution of a transimpedance amplifier configuration of the AD8041 Operational Amplifier. The AD8041 is made in a bipolar technology and the application of interest has a bipolar supply of ±5 V. The device was monitored for transient events on the output voltage during exposure to a heavy ion beam at Lawrence Berkeley National Laboratory’s (LBNL) 88-inch Cyclotron.

Matthew B. Joplin↗