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At least 73 records · Page 4

Russian Activities in Space Photovoltaic Power Modules with Concentrators

Space concentrator modules with point-and line-focus Fresnel lenses and with reflective parabolic troughs have been developed recently at Ioffe Physico-Technical Institute. PV receivers for these modules are based: on the single junction LPE and MOCVD AlGaAs/GaAs solar cells characterized by AM0 efficiencies of 23.5 - 24% at 20 - 50 suns and 24 - 24.75 at 50 - 200 suns; on the mechanically stacked tandem AlGaAs/GaAs-GaSb cells with efficiency of 27 - 28 at 20 - 100 suns. MOCVD AlGaAs/GaAs cells with internal Bragg reflector have shown a higher radiation resistance as compared to a traditional structure. Monolithic two-terminal tandems AlGaAs (top)-GaAs (bottom) for space application and GaSb (top) - InGaAsSb (bottom) for TRV application are under development as well.

Andreev, Vyacheslav M.↗

Potential of thin-film solar cell module technology

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Shimada, K.↗

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

14 SOLAR ENERGY↗

Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)

The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.

14 SOLAR ENERGY↗

Overcoming Shockley-Queisser limit using halide perovskite platform?

The Intergovernmental Panel on Climate Change (IPCC) reveals that the global temperature has reached its highest level in the last 2,000 years. Development of emissions-free electrification technologies such as photovoltaics (PV) can be a great paramountcy to balance the climate pressure and the growing demand on energy. Although many PV technologies have been demonstrated so far, all the single-junction PVs are still subjected to the well-known efficiency cap of the Shockley-Queisser limit (33.7%), with most of the absorbed solar energy lost into heat. In parallel to delicate system-level designs, such as tandem, multi-junction, photothermal, or up-/down-conversion, we ask the question about the feasibility of overcoming the SQ limit at material level. In this study, we first dissect the origin of the limit, and then, by using the emerging perovskite as the platform, we list several potential pathways (i.e., hot carrier, multi-exciton generation, intermediate band gap, and ferroelectricity that have been newly discovered or can be introduced in the perovskite) to the roadmap of exceeding the SQ limit.

14 SOLAR ENERGY↗

Multi-junction solar cells paving the way for super high-efficiency

In order to realize a clean energy society by using renewable energies, high-performance solar cells are a very attractive proposition. The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. As state-of-the-art of single-junction solar cells are approaching the Shockley–Queisser limit of 32%–33%, an important strategy to raise the efficiency of solar cells further is stacking solar cell materials with different bandgaps to absorb different colors of the solar spectrum. The III–V semiconductor materials provide a relatively convenient system for fabricating multi-junction solar cells providing semiconductor materials that effectively span the solar spectrum as demonstrated by world record efficiencies (39.2% under one-sun and 47.1% under concentration) for six-junction solar cells. This success has inspired attempts to achieve the same with other materials like perovskites for which lower manufacturing costs may be achieved. Recently, Si multi-junction solar cells such as III–V/Si, II–VI/Si, chalcopyrite/Si, and perovskite/Si have become popular and are getting closer to economic competitiveness. Here, we discuss the perspectives of multi-junction solar cells from the viewpoint of efficiency and low-cost potential based on scientific and technological arguments and possible market applications. In addition, this article provides a brief overview of recent developments with respect to III–V multi-junction solar cells, III–V/Si, II–VI/Si, perovskite/Si tandem solar cells, and some new ideas including so-called 3rd generation concepts.

14 SOLAR ENERGY↗

AquaPV: Regulatory and Environmental Considerations for Floating Photovoltaic Projects Located on Federally Controlled Reservoirs in the United States

To meet the nation's decarbonization goals, the U.S. Department of Energy's Solar Futures study forecasts that installed solar photovoltaic (PV) capacity must increase nearly tenfold, from 80 gigawatts (GW) in 2020 to approximately 760 GW cumulative installed capacity by 2035. Ground-mounted PV is expected to dominate future solar deployment and will require more than 3.5 million acres of land to meet annual demand projections (of nearly 45 GW) by 2030. However, various competing demands for land (e.g., agricultural production, conservation) and high land acquisition costs in specific locations could be challenges to meeting future PV demand solely with ground-mounted PV deployment. Floating photovoltaics (FPV) may be an alternative in locations where ground-mounted PV is not feasible and aid in reaching the nation's PV deployment and decarbonization goals. FPV is a newer siting approach in which a PV array is affixed to a floating apparatus and sited on a water body like a reservoir behind a dam. FPV systems may be stand-alone or co-located at new or existing hydroelectric facilities or pumped storage hydropower (PSH) facility reservoirs. Co-located FPV systems may or may not be operationally paired and work in tandem with the hydroelectric or PSH facility. This report provides novel analysis to understand the opportunities and challenges associated with developing stand-alone and co-located FPV projects on reservoirs in the United States. Specifically, the report explores potential environmental and energy benefits and environmental impacts associated with the siting, construction, and operation of FPV projects. The report also identifies and analyzes U.S. federal- and state-issued permits and authorizations required by federal laws to understand the licensing pathways and regulatory requirements for FPV projects sited on reservoirs licensed by the Federal Energy Regulatory Commission and on powered and non-powered reservoirs owned by the Bureau of Reclamation or U.S. Army Corps of Engineers.

13 HYDRO ENERGY↗

AquaPV: Regulatory and Environmental Considerations for Floating Photovoltaic Projects Located on Federally Controlled Reservoirs in the United States

To meet the nation's decarbonization goals, the U.S. Department of Energy's Solar Futures study forecasts that installed solar photovoltaic (PV) capacity must increase nearly tenfold, from 80 gigawatts (GW) in 2020 to approximately 760 GW cumulative installed capacity by 2035. Ground-mounted PV is expected to dominate future solar deployment and will require more than 3.5 million acres of land to meet annual demand projections (of nearly 45 GW) by 2030. However, various competing demands for land (e.g., agricultural production, conservation) and high land acquisition costs in specific locations could be challenges to meeting future PV demand solely with ground-mounted PV deployment. Floating photovoltaics (FPV) may be an alternative in locations where ground-mounted PV is not feasible and aid in reaching the nation's PV deployment and decarbonization goals. FPV is a newer siting approach in which a PV array is affixed to a floating apparatus and sited on a water body like a reservoir behind a dam. FPV systems may be stand-alone or co-located at new or existing hydroelectric facilities or pumped storage hydropower (PSH) facility reservoirs. Co-located FPV systems may or may not be operationally paired and work in tandem with the hydroelectric or PSH facility. This report provides novel analysis to understand the opportunities and challenges associated with developing stand-alone and co-located FPV projects on reservoirs in the United States. Specifically, the report explores potential environmental and energy benefits and environmental impacts associated with the siting, construction, and operation of FPV projects. The report also identifies and analyzes U.S. federal- and state-issued permits and authorizations required by federal laws to understand the licensing pathways and regulatory requirements for FPV projects sited on reservoirs licensed by the Federal Energy Regulatory Commission and on powered and non-powered reservoirs owned by the Bureau of Reclamation or U.S. Army Corps of Engineers.

ENERGY PLANNING, POLICY, AND ECONOMY,SOLAR ENERGY↗

AquaPV: Regulatory and Environmental Considerations for Floating Photovoltaic Projects Located on Federally Controlled Reservoirs in the United States

To meet the nation's decarbonization goals, the U.S. Department of Energy's Solar Futures study forecasts that installed solar photovoltaic (PV) capacity must increase nearly tenfold, from 80 gigawatts (GW) in 2020 to approximately 760 GW cumulative installed capacity by 2035. Ground-mounted PV is expected to dominate future solar deployment and will require more than 3.5 million acres of land to meet annual demand projections (of nearly 45 GW) by 2030. However, various competing demands for land (e.g., agricultural production, conservation) and high land acquisition costs in specific locations could be challenges to meeting future PV demand solely with ground-mounted PV deployment. Floating photovoltaics (FPV) may be an alternative in locations where ground-mounted PV is not feasible and aid in reaching the nation's PV deployment and decarbonization goals. FPV is a newer siting approach in which a PV array is affixed to a floating apparatus and sited on a water body like a reservoir behind a dam. FPV systems may be stand-alone or co-located at new or existing hydroelectric facilities or pumped storage hydropower (PSH) facility reservoirs. Co-located FPV systems may or may not be operationally paired and work in tandem with the hydroelectric or PSH facility. This report provides novel analysis to understand the opportunities and challenges associated with developing stand-alone and co-located FPV projects on reservoirs in the United States. Specifically, the report explores potential environmental and energy benefits and environmental impacts associated with the siting, construction, and operation of FPV projects. The report also identifies and analyzes U.S. federal- and state-issued permits and authorizations required by federal laws to understand the licensing pathways and regulatory requirements for FPV projects sited on reservoirs licensed by the Federal Energy Regulatory Commission and on powered and non-powered reservoirs owned by the Bureau of Reclamation or U.S. Army Corps of Engineers.

ENERGY PLANNING, POLICY, AND ECONOMY,SOLAR ENERGY↗

Ultra-High Efficiency and Stable All-Perovskite Tandem Solar Cells

In the project period, the research team has fabricated more than 6,000 single-junction wide-bandgap (wide-E g ) and low-bandgap (low-E g ) perovskite solar cells (PSCs) and more than 2,000 all-perovskite tandem solar cells (APTSCs). The best-performing wide-E g and low-E g PSCs and APTSCs showed PCEs greater than 19%, 23%, and 30%, respectively. The average PCEs for wide-E g and low-E g PSCs and APTSCs fabricated by the benchmark processes are (18.5 ± 0.4)%, (21.9 ± 0.8)%, and (26.8 ± 2.1)%, respectively. We have demonstrated APTSCs with T 80 lifetime of more than 1,000 h, which were measured by maximum power point tracking (MPPT) under one sun operation in the air. The team has also utilized various advanced characterization techniques to study the optical and electrical properties of wide-E g and low-E g perovskite materials and devices, developing a better understanding of the unique working principle and degradation mechanism of APTSCs. The team has met most GNG decision criteria except for the stability goal of APTSCs under 85 °C/85 RH accelerated lifetime test (ALT). The shortfall of the device ALT stability is mainly limited by the intrinsic instability of Sn-Pb perovskites under illumination at elevated temperatures. The team discussed with stakeholders in the PV academic and industry about these durability concerns and concluded that this is the major technical barrier preventing the market entry of APTSCs. Future fundamental study and R&D work are needed to advance this promising technology.

14 SOLAR ENERGY↗

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se) 2 , which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices—e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu 2 BaSnS 4 -related family. Altogether, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

14 SOLAR ENERGY↗

32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells: Preprint

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

GaAsP↗

High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications

Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based on high temperature diffused p-n junctions, featuring a low power conversion efficiency (PCE). Recent years have seen the successful development of Si heterojunction technologies, boosting the PCE of c-Si solar cells over 26%. This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a-Si:H) based silicon heterojunction technology, polycrystalline silicon (poly-Si) based carrier selective passivating contact technology, metal compounds and organic materials based dopant-free passivating contact technology. The application of silicon heterojunction solar cells for ultra-high efficiency perovskite/c-Si and III-V/c-Si tandem devices is also reviewed. In the last, the perspective, challenge and potential solutions of silicon heterojunction solar cells, as well as the tandem solar cells are discussed.

14 SOLAR ENERGY↗

Quantum Mechanical Simulations of Dynamics of Electronic Excitations in Low-Dimensional Photovoltaics Materials

Dynamics of electronically excited states including exciton generation and relaxation, exciton-exciton interaction, and charge/energy transfer and transport, are critical to understanding and optimizing photovoltaic materials. Although considerable progress has been made, accurate experimental characterization of such crucial dynamics remains extremely challenging, especially in low-dimensional materials. In this talk, I will discuss how the advancement of quantum mechanical simulations of the dynamics of electronic excitations can reveal the physical mechanisms hindering or improving solar energy harvest. Specifically, we find that surface dangling-bond defects on silicon quantum dots cause rapid charge recombination and low carrier mobility in the inorganic-organic PV cells. Although small quantum dots are essentially free of defects, their optical gaps are too large. To solve this issue, a full-spectrum-light-absorption scheme is computationally designed, taking advantage of complexity and flexibility of low-dimensional materials consisting of different characteristics and dimensions. In this scheme the multifunctional ligands are used to (1) passivate against oxidation, (2) facilitate interfacial charge transfer, and (3) improve both charge transport and optical absorption. A joint theoretical and experimental study has demonstrated the feasibility of this approach. Finally, I will briefly talk about how this scheme and the well-tested quantum mechanical simulations can be employed to help improve energy-conversion efficiency in perovskite photovoltaics including perovskite-based tandem cells.

Zhigang Wu↗

Flexible Perovskite-Perovskite PV for Mobile Power Applications (Final Technical Report)

This is the final report for the referenced TCF award which ran from Oct. 2019 through Jan. 2024 in conjunction with the industry partner Swift Solar. The long duration of the program was due to several factors including the pandemic and a technical work stoppage due to changes in the scope. Additionally, Swift’s business focus shifted during the course of the program. As a result of these factors, this program underwent two distinct modifications that dramatically changed the work scope. The following report is organized into three separate sections, each of which addresses a distinct work scope. Those scope changes, what necessitated them, and any new tasks/milestones are given, briefly, at the top of each section. The work performed was research on the hybrid halide perovskites (HHP), both the absorber material itself as well as other material layers that are required in a full device stack. At the start of the period of performance, there were two distinct challenges that we sought to address: (1) a wide band gap absorber (>1.6 eV), and (2) a recombination layer for tandem devices that provided good sequestration of the individual cell absorber materials in their respective device layers. NREL had previously published, and patented, advancements in both of these areas and they were the focus of much of the work throughout the program.

14 SOLAR ENERGY↗

Passivated Interfaces and Surface Recombination Velocities in Halide Perovskites

Surfaces and charge-extracting contacts remain major sources of non-radiative recombination loss; limiting the performance of perovskite PV compared to theoretical limits. We investigate mixed-cation mixed-halide perovskites and demonstrate that, with chemical surface passivation, they can achieve >4 μs minority carrier lifetimes, and >20% external PL quantum yields (PLQY), and nearly single-exponential decay kinetics. This high PLQY observed corresponds to ~97% of the Shockley-Queisser theoretical quasi-fermi level splitting, a first for MA-free mixed-cation mixed-halide compositions. The high PLQY and long PL lifetimes allow us to measure average surface recombination velocities (SRV) <10cm/s, with a champion low of ~1cm/s (a conservative estimate). We show how such improvements in SRV should lead to an absolute improvement in PCE of >4% even with the best of contact alignments. We investigate different MA-free high bandgap compositions, including bandgaps relevant for tandem applications (1.7-1.8eV), and demonstrate performance improvements across all these compositions with our surface passivation strategy. Lastly, using a combination of surface characterization techniques, we show Lewis base interactions of the passivating agent with the perovskite surfaces.

14 SOLAR ENERGY↗

Passivated Interfaces and Surface Recombination Velocities in Halide Perovskites

Surfaces and charge-extracting contacts remain major sources of non-radiative recombination loss; limiting the performance of perovskite PV compared to theoretical limits. We investigate mixed-cation mixed-halide perovskites and demonstrate that, with chemical surface passivation, they can achieve >4 μs minority carrier lifetimes, and >20% external PL quantum yields (PLQY), and nearly single-exponential decay kinetics. This high PLQY observed corresponds to ~97% of the Shockley-Queisser theoretical quasi-fermi level splitting, a first for MA-free mixed-cation mixed-halide compositions. The high PLQY and long PL lifetimes allow us to measure average surface recombination velocities (SRV) <10cm/s, with a champion low of ~1cm/s (a conservative estimate). We show how such improvements in SRV should lead to an absolute improvement in PCE of >4% even with the best of contact alignments. We investigate different MA-free high bandgap compositions, including bandgaps relevant for tandem applications (1.7-1.8eV), and demonstrate performance improvements across all these compositions with our surface passivation strategy. Lastly, using a combination of surface characterization techniques, we show Lewis base interactions of the passivating agent with the perovskite surfaces.

passivation↗