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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Progress Towards Prognostic Health Management of Passive Components in Advanced Small Modular Reactors

Sustainable nuclear power to promote energy security and to reduce greenhouse gas emissions are two key national energy priorities. The development of deployable small modular reactors (SMRs) is expected to support these objectives by developing technologies that improve the reliability, sustain safety, and improve affordability of new reactors. Advanced SMRs (AdvSMRs) refer to a specific class of SMRs and are based on modularization of advanced reactor concepts. Prognostic health management (PHM) systems can benefit both the safety and economics of deploying AdvSMRs and can play an essential role in managing the inspection and maintenance of passive components in AdvSMR systems. This paper describes progress on development of a prototypic PHM system for AdvSMR passive components, with thermal creep chosen as the target degradation mechanism.

prognostics, small modular reactors, passive compo↗
DOE OSTI2018

Measuring Diode Resistivity of Passivated Contacts

A technique of examining carrier-selective, passivated contacts is presented, where the contact resistivity is found from the measured diode characteristic. Importantly, this extends the understanding of a passivated contact's resistivity to the case where it is also used to form an emitter or p-n junction.

14 SOLAR ENERGY↗
DOE OSTI2020

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

14 SOLAR ENERGY↗
DOE OSTI2020

Luminescent Solar Concentrator Tandem-on-Silicon with above 700mV Passivated Contact Silicon Bottom Cell

Luminescent solar concentrator (LSC) tandem-on-silicon (Si) provides a route towards achieving higher than 30% overall efficiency which can overcome the theoretical efficiency limit of a single junction Si cell. Here, we present optical coupling and performance of high Voc passivated contact Si bottom cell for LSC tandem-on-Si where the top module consists of highly efficient luminophores and an array of micro InGaP cells embedded in a poly (lauryl methacrylate) waveguide. In this device configuration, InGaP cell area coverage is only ~0.5% of the total LSC area which significantly reduces the high cost III-V material usage. The performance of Si sub-cell is investigated under LSC spectrum and is compared against the measurement done under 1 um thick InGaP filter which mimics the spectrum seen by Si bottom cell in a conventional III-V/Si tandem. V oc of greater than 700 mV has been observed for the passivated contact Si bottom cell in these tandem applications.

14 SOLAR ENERGY↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2021

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗
DOE OSTI2020

Sulfurization as a promising surface passivation approach for both n- and p-type Si

Sulfur is shown to be an effective and promising surface passivation element for both n- and p-type Si wafers after reacting in dilute hydrogen sulfide gas (2 - 6% in argon) at 550°C. Effective minority carrier lifetimes of > 2 ms and > 0.25 ms are achieved for n- and p-type Si wafers, respectively, comparable to the industry standard thermal oxide and atomic layer deposited aluminum oxide passivation level. Surface characterization by x-ray photoelectron and emission spectroscopy reveals that sulfur is primarily bonded in a sulfide environment.

42 ENGINEERING↗
DOE OSTI2021

Submicron Thickness Characterization of Poly-Si Thin Films on Textured Surfaces by X-Ray Diffraction for Minimizing Parasitic Absorption in Poly-Si/SiO2 Passivating Contact Cells

Poly-Si/SiO2 passivating contacts have shown great potential for industry-relevant next-generation solar cells. Previous work has demonstrated an improved Jsc from dry reactive ion etching in an SF6 environment, using front metal grids as a self-aligned mask. Here, we show an effective method to measure the front poly-Si thickness on an alkaline textured surface using X-ray diffraction. The calculated thicknesses are compared with cross-section SEM analysis and Quokka simulation. We show that by thinning the front poly-Si from 200 nm to 60 nm, Jsc increases by 2.4 mA/cm2, leading to an absolute efficiency gain of 1.73%. Finally, we discuss possible reasons for the premature loss of passivation before the removal of all poly-Si.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells

In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.

14 SOLAR ENERGY↗
DOE OSTI2019

A 220-$\mu$ W –83-dBm 5.8-GHz Third-Harmonic Passive Mixer-First LP-WUR for IEEE 802.11ba

A 40-nm CMOS IEEE 802.11ba low-power wake-up receiver (LP-WUR) is presented. It receives 802.11ba messages generated by an 802.11 orthogonal frequency-division multiplexing (OFDM) transmitter operating at 5.8 GHz. The power consumption of the RF front-end is minimized by removing active RF gain stages and using a third harmonic passive mixer with a ring-based local oscillator (LO) operating at one-third of the RF frequency. The noise figure is 14 dB, taking advantage of a 1:3 transformer that provides passive voltage gain in front of the high switch loss mixer-first RF front-end, and matching across 5.5-5.8 GHz with <; -12 dB S11. Here, the receiver achieves a sensitivity of -83-dBm and -20-dB adjacent channel signal-tointerference ratio (SIR) while consuming 220 μW at a bit error rate (BER) of 10-3 and data rate of 62.5 kb/s, which shows the best sensitivity-power tradeoff among >3-GHz receivers.

42 ENGINEERING↗
DOE OSTI2024

Wideband Impedance Passivation of MMCs for Suppressing Harmonic Oscillations

Harmonic instability and associated oscillation events have become one of the main concerns in MMC-based HVdc systems. These oscillations can appear in the range from a few hundred hertz to several kilohertz, and the root cause is identified as delay-induced negative damping of MMC impedance appearing at the system resonance frequency. Here, this paper introduces a wideband impedance reshaping method through MMC control to eliminate such negative damping for both grid-following (GFL) and grid-forming (GFM) MMCs, which makes the MMC impedance completely passive from the second harmonic frequency upward, thus preventing all harmonic oscillations. First, simplified impedance models of MMCs are derived for the harmonic stability analysis and the impedance reshaping control design. Next, a passivity-based impedance reshaping method is presented, as well as practical considerations for its implementation. In addition, to maintain the MMC's disturbance ride-through capability, an adaptive activation scheme is developed, which enables the wideband impedance reshaping control only in the presence of harmonic oscillation events. The effectiveness of the proposed method is validated by frequency domain analysis and by electromagnetic transient (EMT) simulations of two typical MMC-based power systems.

17 WIND ENERGY↗
DOE OSTI2015

Effect of substrate pretreatments on the atomic layer deposited Al{sub 2}O{sub 3} passivation quality

The authors show here that the passivation quality of Al{sub 2}O{sub 3} is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200 °C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO{sub 2} layer resulting from diluted HCl solves the blistering problem often encountered in H{sub 2}O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of surface passivation by SiN/SiO{sub 2} of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO{sub 2} passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO{sub 2} film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Perspective—Localized Corrosion: Passive Film Breakdown vs Pit Growth Stability

A debate about the critical step in localized corrosion has raged for decades. Some researchers focus on the composition and structure of the passive film associated with the initial breakdown of the film, whereas others consider that the susceptibility to pitting is controlled by the pit growth kinetics and the stabilization of pit growth. The basis for a unified theory of pitting is presented here in which pit stability considerations are controlling under aggressive conditions (harsh electrolytes and extreme environments and/or susceptible microstructures) and the passive film properties and protectiveness are the critical factors in less extreme environments and/or for less susceptible alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Performance data for an axial-flow turbine with passive adaptive blades

To support the development of simulation tools for passive adaptive turbine rotors, an experimental data set from a laboratory-scale axial-flow turbine with passive adaptive blades is provided. The 0.45-meter diameter turbine was tested in the Alice C. Tyler Flume at the University of Washington. Blade and rotor loads were measured at 1 kHz using six-axis force/torque sensors while deflection and twist at the blade tip were tracked using a high-speed camera. This data submission includes a technical report, the raw and processed experimental data, and a README file explaining the file/folder structure and where to find the processing/plotting scripts used to produce the figures in the technical report.

16 TIDAL AND WAVE POWER↗
DOE OSTI2016

Brookfield Homes Passive House Performance Evaluation

In 2012-2013, IBACOS worked with a builder, Brookfield Homes in Denver, Colorado, to design and construct a Passive House certified model home. IBACOS used several modeling programs and calculation methods to complete the final design package along with Brookfield's architect KGA Studio. This design package included upgrades to the thermal enclosure, basement insulation, windows, and heating, ventilation, and air conditioning. Short-term performance testing in the Passive House was done during construction and after construction.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗