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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 847 records · Page 47
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Effect of Temperature on the Deformation Behavior of B2 Austenite in a Polycrystalline Ni49.9Ti50.1 (at.Percent) Shape Memory Alloy

Superelasticity in austenitic B2-NiTi is of great technical interest and has been studied in the past by several researchers [1]. However, investigation of temperature dependent deformation in B2-NiTi is equally important since competing mechanisms of stress-induced martensite (SIM), retained martensite, plastic and deformation twinning can lead to unusual mechanical behaviors. Identification of the role of various mechanisms contributing to the overall deformation response of B2-NiTi is imperative to understanding and maturing SMA-enabled technologies. Thus, the objective of this work was to study the deformation of polycrystalline Ni49.9Ti50.1 (at. %) above A(sub f) (105 C) in the B2 state at temperatures between 165-440 C, and generate a B2 deformation map showing active deformation mechanisms in different temperature-stress regimes.

Garg, A.↗
NASA NTRS2004

Mitigation of High Altitude and Low Earth Orbit Radiation Effects on Microelectronics via Shielding or Error Detection and Correction Systems

The NASA Cooperative Agreement NAG4-210 was granted under the FY2000 Faculty Awards for Research (FAR) Program. The project was proposed to examine the effects of charged particles and neutrons on selected random access memory (RAM) technologies. The concept of the project was to add to the current knowledge of Single Event Effects (SEE) concerning RAM and explore the impact of selected forms of radiation on Error Detection and Correction Systems. The project was established as an extension of a previous FAR awarded to Prairie View A&M University (PVAMU), under the direction of Dr. Richard Wilkins as principal investigator. The NASA sponsored Center for Applied Radiation Research (CARR) at PVAMU developed an electronic test-bed to explore and quantify SEE on RAM from charged particles and neutrons. The test-bed was developed using 486DX microprocessor technology (PC-104) and a custom test board to mount RAM integrated circuits or other electronic devices. The test-bed had two configurations - a bench test version for laboratory experiments and a 400 Hz powered rack version for flight experiments. The objectives of this project were to: 1) Upgrade the Electronic Test-bed (ETB) to a Pentium configuration; 2) Accommodate more than only 8 Mbytes of RAM; 3) Explore Error Detection and Correction Systems for radiation effects; 4) Test modern RAM technologies in radiation environments.

Gupta, Kajal↗
NASA NTRS2021

Non-Volatile Memory Radiation Update

This work provides a current update of radiation testing activities on non-volatile memories in support of the NEPP program. Single-event effects data from heavy-ion testing is highlighted on two off-the-shelf high-speed memory modules.

Flash↗
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
NASA NTRS1983

Distributed multiport memory architecture

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Kohl, W. H.↗
NASA NTRS1978

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Simons, M.↗
DOE OSTI2024

Improving streamflow predictions across CONUS by integrating advanced machine learning models and diverse data

Accurate streamflow prediction is crucial to understand climate impacts on water resources and develop effective adaption strategies. A global long short-term memory (LSTM) model, using data from multiple basins, can enhance streamflow prediction, yet acquiring detailed basin attributes remains a challenge. To overcome this, we introduce the Geo-vision transformer (ViT)-LSTM model, a novel approach that enriches LSTM predictions by integrating basin attributes derived from remote sensing with a ViT architecture. Applied to 531 basins across the Contiguous United States, our method demonstrated superior prediction accuracy in both temporal and spatiotemporal extrapolation scenarios. Geo-ViT-LSTM marks a significant advancement in land surface modeling, providing a more comprehensive and effective tool for better understanding the environment responses to climate change.

Tayal, Kshitij↗
DOE OSTI2016

Facile fabrication of highly ordered poly(vinylidene fluoride-trifluoroethylene) nanodot arrays for organic ferroelectric memory

Nano-patterned ferroelectric materials have attracted significant attention as the presence of two or more thermodynamically equivalent switchable polarization states can be employed in many applications such as non-volatile memory. In this work, a simple and effective approach for fabrication of highly ordered poly(vinylidene fluoride–trifluoroethylene) P(VDF-TrFE) nanodot arrays is demonstrated. By using a soft polydimethylsiloxane mold, we successfully transferred the 2D array pattern from the initial monolayer of colloidal polystyrene nanospheres to the imprinted P(VDF-TrFE) films via nanoimprinting. The existence of a preferred orientation of the copolymer chain after nanoimprinting was confirmed by Fourier transform infrared spectra. Local polarization switching behavior was measured by piezoresponse force microscopy, and each nanodot showed well-formed hysteresis curve and butterfly loop with a coercive field of ∼62.5 MV/m. To illustrate the potential application of these ordered P(VDF-TrFE) nanodot arrays, the writing and reading process as non-volatile memory was demonstrated at a relatively low voltage. As such, our results offer a facile and promising route to produce arrays of ferroelectric polymer nanodots with improved piezoelectric functionality.

36 MATERIALS SCIENCE↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗
DOE OSTI2016

SU-F-J-10: Sliding Mode Control of a SMA Actuated Active Flexible Needle for Medical Procedures

Purpose: In medical interventional procedures such as brachytherapy, ablative therapies and biopsy precise steering and accurate placement of needles are very important for anatomical obstacle avoidance and accurate targeting. This study presents the efficacy of a sliding mode controller for Shape Memory Alloy (SMA) actuated flexible needle for medical procedures. Methods: Second order system dynamics of the SMA actuated active flexible needle was used for deriving the sliding mode control equations. Both proportional-integral-derivative (PID) and adaptive PID sliding mode control (APIDSMC) algorithms were developed and implemented. The flexible needle was attached at the end of a 6 DOF robotic system. Through LabView programming environment, the control commands were generated using the PID and APIDSMC algorithms. Experiments with artificial tissue mimicking phantom were performed to evaluate the performance of the controller. The actual needle tip position was obtained using an electromagnetic (EM) tracking sensor (Aurora, NDI, waterloo, Canada) at a sampling period of 1ms. During experiment, external disturbances were created applying force and thermal shock to investigate the robustness of the controllers. Results: The root mean square error (RMSE) values for APIDSMC and PID controllers were 0.75 mm and 0.92 mm, respectively, for sinusoidal reference input. In the presence of external disturbances, the APIDSMC controller showed much smoother and less overshooting response compared to that of the PID controller. Conclusion: Performance of the APIDSMC was superior to the PID controller. The APIDSMC was proved to be more effective controller in compensating the SMA uncertainties and external disturbances with clinically acceptable thresholds.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Spatial Locality-Aware Cache Partitioning for Effective Cache Sharing, In: 2015 44th International Conference on Parallel Processing

In modern multi-core processors, last-level caches (LLCs) are typically shared among multiple cores. Previous works have shown that such sharing is beneficial as different workloads have different needs for cache capacity, and logical partitioning of capacity can improve system performance. However, what is missing in previous works on partitioning shared LLCs is that the heterogeneity in spatial locality among workloads has not been explored. In other words, all the cores use the same block/line size in shared LLCs. In this work, we highlight that exploiting spatial locality enables much more effective cache sharing. The fundamental reason is that for many memory intensive workloads, their cache capacity requirements can be drastically reduced when a large block size is employed, therefore they can effectively donate more capacity to other workloads. To leverage spatial locality for cache partitioning effectively, we first propose a simple yet effective mechanism to measure both spatial and temporal locality at run-time. The locality information is then used to determine both the proper block size and the capacity assigned to each workload. Our experiments show that our Spatial Locality-aware Cache Partitioning (SLCP) significantly outperforms the previous works. We also present several case studies that dissect the effectiveness of SLCP compared to the existing approaches.

Computer Science↗
DOE OSTI2026

Molecular pathways for learning in the single-cell Stentor coeruleus

The single-cell Stentor coeruleus contracts in response to mechanical taps but habituates and learns to ignore the taps after repeated stimulation. Here, we explored the molecular changes that occur during the formation of this cellular memory in order to improve our understanding of non-synaptic learning. We impaired cellular protein synthesis with cycloheximide and puromycin and found that, contrary to the effects of such treatments on metazoa, these drugs accelerate habituation and prolong memory retention in Stentor . Exploratory proteomic and transcriptomic analyses identified candidate proteins and genes that changed over the course of habituation and response recovery, pointing toward the regulation of Stentor learning by calcium signaling and protein phosphorylation. Building on these results, we found that using RNA interference to knock down the calcium-binding, EF-hand domain-containing protein SteCoe_6763 accelerated habituation. Furthermore, increased extracellular calcium improved Stentor learning, while treatment with kinase and phosphatase inhibitors impaired learning. In particular, KN-93, a drug known to inhibit calcium/calmodulin-dependent kinase II and voltage-gated calcium channels, decreased both the rate and extent of habituation in Stentor , similar to its effects on learning in metazoa. We also discovered that habituation memory can be maintained in progeny following cell division. Taken together, these results suggest that response recovery in Stentor requires new protein synthesis and that memory formation involves the modification of delocalized mechanoreceptors by phosphorylation and calcium signaling. This is consistent with our previous model of Stentor learning, in which habituation occurs through the inactivation of cell-surface receptors.

CaMKII↗
DOE OSTI2015

Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the voltage at the end of the write pulse, the STT decays more slowly or at least at the same rate as the temperature. This condition is necessary to make sure that the storage layer magnetization remains in the desired written direction during cooling of the cell. The influence of the write current pulse decay rate was investigated on two exchange biased synthetic ferrimagnet (SyF) electrodes. For a NiFe based electrode, a significant improvement in writing reproducibility was observed using a gradual linear voltage transition. The write error rate decreases by a factor of 10 when increasing the write pulse fall-time from ∼3 ns to 70 ns. For comparison, a second CoFe/NiFe based electrode was also reversed by magnetic field assisted by STT. In this case, no difference between sharp and linear write pulse fall shape was observed. We attribute this observation to the higher thermal stability of the CoFe/NiFe electrode during cooling. In real-time measurements of the magnetization reversal, it was found that Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling in the SyF electrode vanishes for the highest pulse voltages that were used due to the high temperature reached during write. As a result, during the cooling phase, the final state is reached through a spin-flop transition of the SyF storage layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2018

The Effect of Thin Film Adhesives on Mode I Interlaminar Fracture Toughness in Carbon Fiber Composites with Shape Memory Alloy Inserts

Shape Memory Alloy (SMA) was placed within Polymer Matrix Composite (PMC) panels alongside film adhesives to examine bonding. Double cantilever beam (DCB) testing was performed using ASTM D5528. C-scanning was performed before testing, modal acoustic emissions (MAE) were monitored during testing, and microscopy performed post-test. Data was analyzed using modified beam theory (MBT), compliance calibration (CC) and modified compliance calibration (MCC) methods. Fracture toughness for control specimens was higher than previously reported due to fiber-bridging. Specimens with SMAs and adhesives stabilized crack propagation. Results revealed SMA-bridging; a phenomenon mimicking fiber-bridging which increased the load and fracture toughness of SMA specimens.

Derek J Quade↗
NASA NTRS2019

The Effect of Thin Film Adhesives on Mode II Interlaminar Fracture Toughness in Carbon Fiber Composites with Shape Memory Alloy Inserts

A single sheet of nickel-titanium (NiTi) shape memory alloy (SMA) was introduced within an IM7/8552 polymer matrix composite (PMC) panel in conjunction with multiple thin film adhesives to promote the interfacial bond strength between the SMA and PMC. End notched flexure (ENF) testing was performed in accordance to ASTM D7905 method for evaluation of mode II interlaminar fracture toughness (GIIC) of unidirectional fiber-reinforced polymer matrix composites. Acoustic emissions (AE) were monitored during testing with two acoustic sensors attached to the specimens. The composite panels examined using scanning electron microscopy techniques after part failure. GIIC values for the control composite samples were found to be higher than those of samples with embedded SMA sheets. The presence of adhesives bonded to SMA sheets further diminished the GIIC values. AE values revealed poor bonding of the panels, with little to no signals during testing.

End Notched Flexure↗