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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Pulse-by-pulse transient thermal deformation in crystal optics under high-repetition-rate FEL

Time-domain modeling of the thermal deformation of crystal optics can help define acceptable operational ranges across the pulse-energy repetition-rate phase space. In this paper, we have studied the transient thermal deformation of a water-cooled diamond crystal for a cavity-based X-ray free-electron laser (CBXFEL), either an X-ray free-electron laser oscillator (XFELO) or a regenerative amplifier X-ray free-electron laser (RAFEL), by numerical simulations including finite-element analysis and advanced data processing. Pulse-by-pulse transient thermal deformation of a 50 µm-thick diamond crystal has been performed with X-ray pulse repetition rates between 50 kHz and 1 MHz. Results for temperature and thermal deformation have been compared with the results of transient analysis using a continuous wave (CW) power loading. Temperature and thermal deformation results from pulse-by-pulse transient analysis vary with time about the results for the CW case for the same average power. The variation amplitude increases with pulse energy and decreases with repetition rate. When the repetition rate increases to infinity, both temperature and thermal deformation converge to the results for the CW case. Two critical time scales for the operation of crystal optics in a CBXFEL are (1) first-turn time, i.e. the time for the XFEL pulse to complete the first turn around the cavity so that the crystal sees the recirculated XFEL pulse, and (2) period-end time, i.e. the time that the next electron bunch arrives for the amplification, so that the crystal outcouples the amplified FEL power. For the same average power, simulation results show that the crystal thermal deformation seen by the XFEL beam decreases with repetition rate at the first-turn time of a 300 m-long cavity and increases with repetition rate at the period-end time. For the wavefront preservation requirement of the crystal optics, a pulse-energy versus repetition-rate phase space has been established. The upper bounds of the pulse energy at both first-turn and period-end times decreases with repetition rate, especially at the period-end time. The upper bound of the thermal deformation of the crystal at the period-end time for any repetition frequency can be estimated from the CW case. For a water-cooled diamond crystal of dimension 5 mm × 5 mm × 0.05 mm, the time to reach a quasi steady-state is about 50 ms for temperature and 50 µs for thermal deformation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1988

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Bautista, J. J.↗
NASA NTRS1989

32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Duh, K. H. George↗
NASA NTRS1991

A cooled 1- to 2-GHz balanced HEMT amplifier

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

G. G. Ortiz↗
NASA NTRS2012

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

cryogenically cooled superconductorinsulator- supe↗
NASA NTRS2007

High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube

The L-3 Communications Model 999H traveling-wave tube (TWT) has been demonstrated to generate an output power of 144 W at 60-percent overall efficiency in continuous-wave operation over the frequency band from 31.8 to 32.3 GHz. The best TWT heretofore commercially available for operation in the affected frequency band is characterized by an output power of only 35 W and an efficiency of 50 percent. Moreover, whereas prior TWTs are limited to single output power levels, it has been shown that the output power of the Model 999H can be varied from 54 to 144 W. A TWT is a vacuum electronic device used to amplify microwave signals. TWTs are typically used in free-space communication systems because they are capable of operating at power and efficiency levels significantly higher than those of solid-state devices. In a TWT, an electron beam is generated by an electron gun consisting of a cathode, focusing electrodes, and an anode. The electrons pass through a hole in the anode and are focused into a cylindrical beam by a stack of periodic permanent magnets and travel along the axis of an electrically conductive helix, along which propagates an electromagnetic wave that has been launched by an input signal that is to be amplified. The beam travels within the helix at a velocity close to the phase velocity of the electromagnetic wave. The electromagnetic field decelerates some of the electrons and accelerates others, causing the beam to become formed into electron bunches, which further interact with the electromagnetic wave in such a manner as to surrender kinetic energy to the wave, thereby amplifying the wave. The net result is to amplify the input signal by a factor of about 100,000. After the electrons have passed along the helix, they impinge on electrodes in a collector. The collector decelerates the electrons in such a manner as to recover most of the remaining kinetic energy and thereby significantly increase the power efficiency of the TWT.

Krawczyk, Richard↗
NASA NTRS2003

MMIC HEMT Power Amplifier for 140 to 170 GHz

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

Samoska, Lorene↗
NASA NTRS2008

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
NASA NTRS1977

Secondary-electron-emission properties of conducting surfaces with application to multistage depressed collectors for microwave amplifiers

To improve the efficiency of high power microwave tubes, low secondary electron yield electrode surface for use in depressed collectors are needed. The secondary emission characteristics of a number of materials were investigated. The materials studied were beryllium, carbon (soot and pyrolytic graphite), copper, titanium carbide, and tantalum. Both total secondary yield delta and relative reflected primary yield were measured. These measurements were made in conjunction with Auger spectroscopy so that the secondary emission characteristics could be determined as a function of surface contamination or purity. The results show that low atomic weight elements, such as beryllium and carbon, have the lowest reflected primary yield and that roughening the surface of an electrode can markedly decrease secondary yield both for delta and reflected primaries. All factors considered, a roughened pyrolytic graphite surface showed the greatest potential for use as an electrode surface in depressed collectors.

Forman, R.↗
DOE OSTI2024

Electron diffusion in microbunched electron cooling

Coherent electron cooling is a novel method to cool dense hadron beams on timescales of a few hours. This method uses a copropagating beam of electrons to pick up the density fluctuations within the hadron beam in one straight section and then provides corrective energy kicks to the hadrons in a downstream straight, cooling the beam. Microbunched electron cooling is an extension of this idea, which induces a microbunching instability in the electron beam as it travels between the two straights, amplifying the signal. However, initial noise in the electron bunch will also be amplified, providing random kicks to the hadrons downstream which tend to increase their emittance. In this paper, we develop an analytic estimate of the effect of the electron noise and benchmark it against simulations. We also discuss how this effect has impacted the cooler design. Published by the American Physical Society 2024

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS2009

Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph

A single-pixel prototype of a W-band detector module with a digital back-end was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers, and a WR10 waveguide input with a coaxial local oscillator. State-of-the-art InP HEMT (high electron mobility transistor) MMIC amplifiers at the front end provide approximately 40 dB of gain. The measured noise temperature of the module, at an ambient temperature of 300 K, was found to be as low as 450 K at 95 GHz. The modules will be used to develop multiple instruments for astrophysics radio telescopes, both on the ground and in space. The prototype is being used by Stanford University to characterize noise performance at cryogenic temperatures. The goal is to achieve a 30-50 K noise temperature around 90 GHz when cooled to a 20 K ambient temperature. Further developments include characterization of the IF in-phase (I) and quadrature (Q) signals as a function of frequency to check amplitude and phase; replacing the InP low-noise amplifiers with state-of-the-art 35-nm-gate-length NGC low-noise amplifiers; interfacing the front-end module with a digital back-end spectrometer; and developing a scheme for local oscillator and IF distribution in a future array. While this MMIC is being developed for use in radio astronomy, it has the potential for use in other industries. Applications include automotive radar (both transmitters and receivers), communication links, radar systems for collision avoidance, production monitors, ground-penetrating sensors, and wireless personal networks.

Kangaslahti, Pekka P.↗
NASA NTRS2011

Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation

HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactured at 100 GHz, but the advances in technology should make it possible to develop receiver modules with even greater operation frequency up to 200 GHz. A prototype heterodyne amplifier module has been developed for operation from 140 to 170 GHz using monolithic millimeter-wave integrated circuit (MMIC) low-noise InP high electron mobility transistor (HEMT) amplifiers. The compact, scalable module is centered on the 150-GHz atmospheric window using components known to operate well at these frequencies. Arrays equipped with hundreds of these modules can be optimized for many different astrophysical measurement techniques, including spectroscopy and interferometry. This module is a heterodyne receiver module that is extremely compact, and makes use of 35-nm InP HEMT technology, and which has been shown to have excellent noise temperatures when cooled cryogenically to 30 K. This reduction in system noise over prior art has been demonstrated in commercial mixers (uncooled) at frequencies of 160-180 GHz. The module is expected to achieve a system noise temperature of 60 K when cooled. An MMIC amplifier module has been designed to demonstrate the feasibility of expanding heterodyne amplifier technology to the 140 to 170-GHz frequency range for astronomical observations. The miniaturization of many standard components and the refinement of RF interconnect technology have cleared the way to mass-production of heterodyne amplifier receivers, making it a feasible technology for many large-population arrays. This work furthers the recent research efforts in compact coherent receiver modules, including the development of the Q/U Imaging ExperimenT (QUIET) modules centered at 40 and 90 GHz, and the production of heterodyne module prototypes at 90 GHz.

Kangaslahti, Pekka P.↗
NASA NTRSDate not supplied

How Auroral Electron Precipitations Contribute to the Formation of Electron Heat Fluxes to the Ionosphere?

Electron heat fluxes (also called electron thermal fluxes) in the ionosphere are carried by thermal electrons whose energy is below a few eV. Electron heat fluxes greatly impact on electron temperature, which is a fundamental parameter in the ionospheric dynamics. At the high latitude in the auroral regions electron heat flux is originated dominantly from the magnetosphere through high-energy electron energy fluxes. High-energy electron fluxes in the diffuse auroral region can undergo multiple backscatters between the magnetically conjugated regions of both hemispheres, and different kind of wave-particle interactions along the magnetic field line. High-energy electron fluxes in discrete auroral region can be trapped below the auroral acceleration region and can also undergo backscatter and multiple reflection. These processes, in turn, amplify super-thermal electrons (<~500-600 eV) that dominantly form electron heat fluxes through Coulomb collision between thermal electrons. Such electron heat fluxes play an important role to determine electron temperature profile in the ionosphere, which is one of the key parameters that controls the ionospheric dynamics. Thus, it is necessary to include electron heat flux as a topside energy input in all global ionospheric models. We demonstrate all above results based on Superthermal Electron Transport (STET), Superthermal Proton, Electron and Atomic Hydrogen tRansport in the Ionosphere and Thermosphere (SPEAH-RIT), and Comprehensive Inner Magnetosphere and Ionospheres (CIMI) codes developed at NASA Goddard Space Flight Center.

George V. Khazanov↗
NASA NTRS1980

Performance of a flight qualified, thermoelectrically temperature controlled QCM sensor with power supply, thermal controller and signal processor

A thermoelectrically temperature controlled quartz crystal microbalance (QCM) system was developed for the measurement of ion thrustor generated mercury contamination on spacecraft. Meaningful flux rate measurements dictated an accurately held sensing crystal temperature despite spacecraft surface temperature variations from -35 C to +60 C over the flight temperature range. An electronic control unit was developed with magentic amplifier transformer secondary power supply, thermal control electronics, crystal temperature analog conditioning and a multiplexed 16 bit frequency encoder.

Wallace, D. A.↗
NASA NTRS1972

The plasma physics of the Jovian decameter radiation.

We have assumed that the decameter radiation from Jupiter is produced near the local electron gyrofrequency and is amplified as it propagates out of the Jovian magnetosphere. We have derived the growth rate for radiation that propagates almost perpendicular to the direction of the magnetic field. When the electrons are described by a loss-cone distribution function, the growth rate is large enough to lead to a large amplification factor over a source of 100-4000 km, depending on the choice of parameters. Because we expect low-energy electrons to be trapped in the Jovian dipole field regardless of the position of the satellite Io, we maintain that this model provides a plausible mechanism for the decametric radiation not associated with Io.

Goldstein, M. L.↗
NASA NTRSDate not supplied

Linear Array Photodiode and Data Acquisition System Development for Multi-Point Line FLDI Measurements

The continuous development and advancement of multi-point line focused laser differential interferometry (FLDI) instruments requires larger numbers of acquisition channels to make more finely spatially resolved measurements of high-frequency flow fluctuations. No current off-the-shelf system exists for these line FLDI measurements, and so a single unified system consisting of a linear array photodiode, required electronics, and a data acquisition system has been developed to enhance the measurement resolution, both spatially and temporally. A printed circuit board was developed on which the linear array photodiode is mounted for inclusion into an existing FLDI system, and amplifier breakout boards incorporate electronics to condition the signal for the data acquisition system while retaining the necessary high frequency response. The data acquisition system uses a National Instruments chassis and multiple oscilloscope modules, with a specially-designed LabVIEW user interface for laboratory and wind tunnel setup, calibration, and testing. Details regarding the development of the linear array photodiode system and the data acquisition system are provided, and systematic testing of all components is presented, culminating in a test of the system integrated into an existing line FLDI system for measurements of a turbulent jet.

Joshua M Weisberger↗