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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

Kumar, Sushil↗
NASA NTRS2010

Discovery of X-Ray-Emitting O-Ne-Mg-Rich Ejecta in the Galactic Supernova Remnant Puppis A

We report on the discovery of X-ray-emitting O-Ne-Mg-rich ejecta in the middle-aged Galactic O-rich supernova remnant Puppis A with Chandra and XMM-Newton. We use line ratios to identify a low-ionization filament running parallel to the northeastern edge of the remnant that requires super-solar abundances, particularly for O, Ne, and Mg, which we interpret to be from O-Ne-Mg-rich ejecta. Abundance ratios of Ne/O, Mg/O, and Fe/O are measured to be [approx]2, [approx]2, and <0.3 times the solar values. Our spatially resolved spectral analysis from the northeastern rim to the western rim otherwise reveals sub-solar abundances consistent with those in the interstellar medium. The filament is coincident with several optically emitting O-rich knots with high velocities. If these are physically related, the filament would be a peculiar fragment of ejecta. On the other hand, the morphology of the filament suggests that it may trace ejecta heated by a shock reflected strongly off the dense ambient clouds near the northeastern rim.

Katsuda, Satoru↗
NASA NTRS2013

Active Matrix Organic Light Emitting Diode (AMOLED) Environmental Test Report

This report focuses on the limited environmental testing of the AMOLED display performed as an engineering evaluation by The NASA Johnson Space Center (JSC)-specifically. EMI. Thermal Vac, and radiation tests. The AMOLED display is an active-matrix Organic Light Emitting Diode (OLED) technology. The testing provided an initial understanding of the technology and its suitability for space applications. Relative to light emitting diode (LED) displays or liquid crystal displays (LCDs), AMOLED displays provide a superior viewing experience even though they are much lighter and smaller, produce higher contrast ratio and richer colors, and require less power to operate than LCDs. However, AMOLED technology has not been demonstrated in a space environment. Therefore, some risks with the technology must be addressed before they can be seriously considered for human spaceflight. The environmental tests provided preliminary performance data on the ability of the display technology to handle some of the simulated induced space/spacecraft environments that an AMOLED display will see during a spacecraft certification test program. This engineering evaluation is part of a Space Act Agreement (SM) between The NASA/JSC and Honeywell International (HI) as a collaborative effort to evaluate the potential use of AMOLED technology for future human spaceflight missions- both government-led and commercial. Under this SM, HI is responsible for doing optical performance evaluation, as well as temperature and touch screen studies. The NASA/JSC is responsible for performing environmental testing comprised of EMI, Thermal Vac, and radiation tests. Additionally, as part of the testing, limited optical data was acquired to assess performance as the display was subjected to the induced environments. The NASA will benefit from this engineering evaluation by understanding AMOLED suitability for future use in space as well as becoming a smarter buyer (or developer) of the technology. HI benefits from the environmental testing results by understanding its performance limitations/shortcomings to improve subsequent generations of AMOLED technology. Note that the AMOLED used in this test was not deSigned for the space environment but rather for commercial/industrial terrestrial applications.

Salazar, George A.↗
NASA NTRS2016

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗
NASA NTRS2017

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗
NASA NTRS2016

First Demonstration of Single-Mode Distributed Feedback Type-I GaSb Cascade Diode Laser Emitting near 2.9 µm

We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 µm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.

type-I↗
NASA NTRS2021

Broadband X-ray burst spectroscopy of the fast-radio-burst-emitting Galactic magnetar

Magnetars are young, magnetically powered neutron stars that possess the strongest magnetic fields in the Universe. Fast radio bursts (FRBs) are extremely intense millisecond-long radio pulses of primarily extragalactic origin, and a leading attribution for their genesis focuses on magnetars. A hallmark signature of magnetars is their emission of bright, hard X-ray bursts of sub-second duration. On 27 April 2020, the Galactic magnetar SGR J1935+2154 emitted hundreds of X-ray bursts within a few hours. One of these temporally coincided with an FRB, the first known detection of an FRB from the Milky Way. Here, we present spectral and temporal analyses of 24 X-ray bursts emitted 13 hours prior to the FRB and seen simultaneously with the Neutron Star Interior Composition Explorer (NICER) mission of the National Aeronautics and Space Administration and with the Fermi Gamma-ray Burst Monitor (GBM) mission in their combined energy range of 0.2 keV to 30 MeV. These broadband spectra permit direct comparison with the spectrum of the FRB-associated X-ray burst (FRB-X). We demonstrate that all 24 NICER and GBM bursts are very similar temporally to the FRB-X, but strikingly different spectrally. The singularity of the FRB-X burst is perhaps indicative of an uncommon locale for its origin. We suggest that this event originated in quasi-polar open or closed magnetic field lines that extend to high altitudes.

G. Younes↗
NASA NTRS2020

Spatial distribution of the X-ray-emitting plasma of U Geminorum in quiescence and outburst

We present our analysis of the Suzaku data of U Geminorum (U Gem) from 2012 both in quiescence and outburst. Unlike SS Cygni (SS Cyg), the hard X-ray flux of U Gem is known to increase at times of optical outburst. A sophisticated spectral model and reliable distance estimate now reveal that this can be attributed to the fact that the mass accretion rate onto the white dwarf (WD) does not exceed the critical rate that causes the optically thin to thick transition of the boundary layer. From comparison of the X-ray and optical light curves, the X-ray outburst peak seems to be retarded by 2.1 ± 0.5 d, although there remains uncertainty in the X-ray peak identification, due to short data coverage. The larger delay than SS Cyg (0.9–1.4 d) also supports the lower accretion rate in U Gem. A fluorescent iron 6.4 keV emission line bears significant information about the geometry of the X-ray-emitting hot plasma and the accretion disk (AD) that reflects the hard X-ray emission. Our reflection simulation has shown that the optically thick AD is truncated at a distance of 1.20–1.25 times the white dwarf radius (RWD) in quiescence, and the accreting matter in the disk turns into the optically thin hard-X-ray-emitting plasma at this radius. In outburst, on the other hand, our spectral analysis favors the picture that the optically thick disk reaches the WD surface, although disk truncation can take place in the region of <1.012 RWD. From the profile of the 6.4 keV line, we have also discovered that the accreting matter is heated up close to the maximum temperature immediately after the matter enters the boundary layer at the disk truncation radius. This is consistent with the fact that the hard X-ray spectra of dwarf novae, in general, can be well represented with the cooling flow model.

Mai Takeo↗
DOE OSTI2025

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗
DOE OSTI2024

Effect of molecular permanent dipole moment on guest aggregation and exciton quenching in phosphorescent organic light emitting diodes

This study explores the effect of molecular permanent dipole moment (PDM) on aggregation of guest molecules in phosphorescent host–guest organic light-emitting diodes (OLEDs). Through a combination of photoluminescence measurements, high-angle annular dark-field scanning transmission electron microscopy analysis, and an Ising model based physical vapor-deposition simulation, we show that higher PDM of tris[2-phenylpyridinato-C2,N]iridium(III) guest can actually lead to a reduced aggregation relative to tris[bis[2-(2-pyridinyl-N)phenyl-C] (acetylacetonato)iridium(III) when doped into a non-polar host 1,3,5-tris(carbazol-9-yl)benzene. This study further explores the effect of host polarity by using a polar host 3′,5′-di(carbazol-9-yl)-[1,1′-biphenyl]-3,5-dicarbonitrile, and it is shown that the polar host leads to reduced guest aggregation. In conclusion, this study provides a comprehensive understanding of the impact of molecular PDM on OLED material efficiency and stability, providing insights for optimizing phosphorescent OLED materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

The quantum efficiency of AlGaN ultraviolet light-emitting diodes declines (droops) at increasing operating powers due to Auger–Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron–phonon coupling and alloy disorder can induce bulk C coefficients as large as ~10 –31 cm 6 /s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. Furthermore, this results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗
DOE OSTI2025

Efficiency droop contributors in InGaN green light emitting diodes

Here, efficiency droop contributors (i.e., inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction) in InGaN green light emitting diodes (LEDs) are decoupled and quantified. First, a modified ABC model is developed, and external quantum efficiency measurements are taken under constant and pulsed currents (⁠ EQE Constant and EQE Pulsed ⁠, respectively). The LED internal quantum efficiency with and without thermal effects (⁠ IQE$^{ABC}_{Constant}$ and IQE$^{ABC}_{Pulsed}$⁠, respectively) is extracted using the modified model. Then, using Raman spectroscopy, the LED junction temperature is extracted. Finally, using the optical-electrical model (OEM), the polarization- and temperature-independent LED internal quantum efficiency (⁠ IQE OEM ) is calculated from the modified ABC model and the extracted junction temperature. By comparing external (⁠ EQE Constant ⁠) and the three internal quantum efficiencies (⁠ IQE$^{ABC}_{Constant}$, IQE$^{ABC}_{Pulsed}$⁠, and IQE OEM ), the impacts of inherent Auger–Meitner recombination, polarization-induced effects, thermal effects, and light extraction on the efficiency droop are decoupled and quantified. It is found that inherent Auger–Meitner recombination-induced droop is approximately 49% of the total efficiency droop in commercial green LEDs, while polarization-induced effects contribute about 35%, and thermal droop accounts for nearly 16%. Lastly, these findings suggest, to quash the green gap, it is critical to search for materials and device designs with low inherent Auger–Meitner coefficients and polarization fields, respectively.

42 ENGINEERING↗
DOE OSTI2024

Roadmap on perovskite light-emitting diodes

Abstract In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to over 30% (in 2023) across a wide range of wavelengths. However, several challenges still hinder their commercialization, including the relatively low EQEs of blue/white devices, limited EQEs in large-area devices, poor device stability, as well as the toxicity of the easily accessible lead components and the solvents used in the synthesis and processing of PeLEDs. This roadmap addresses the current and future challenges in PeLEDs across fundamental and applied research areas, by sharing the community’s perspectives. This work will provide the field with practical guidelines to advance PeLED development and facilitate more rapid commercialization.

14 SOLAR ENERGY↗
DOE OSTI2024

Volumetric carrier injection in InGaN quantum well light emitting diodes

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. Here, we have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

InGaN/GaN quantum wells↗
NASA NTRS1997

Quantum cascade light emitting diodes based on type-2 quantum wells

The authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

Light Emitting Diodes↗
NASA NTRS2000

Proton displacement damage in light-emitting and laser diodes

The effects of proton displacement damage on light-emitting diodes and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exists in the literature.

space radiation laser light-emitting diode↗