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Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.
Spin-helical Dirac Fermions at a doped topological insulator’s boundaries can support Majorana quasiparticles when coupled with s-wave superconductors, but in n-doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are p-doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in p-doped topological Sb 2 Te 3 on superconducting Nb. Despite no momentum-space degeneracy, the topological and bulk states of Sb 2 Te 3 /Nb exhibit the same isotropic superconducting gaps at low temperatures. Furthermore, our results unify principles for realizing accessible pairing in Dirac Fermions relevant to topological superconductivity.
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Commercial-off-the-shelf area array package technologies in high-reliability versions are being considered for NASA electronic systems. These packages are prone to early failure due to the severe mechanical shock and vibration of launch, as well as other less severe conditions, such as mechanical loading during descent, rough terrain mobility, handling, and ground tests. As the density of these packages increases and the size of ball interconnections decrease, susceptibility to mechanical loading and cycling fatigue grows. This report presents a summary of the body of knowledge developed for the evaluation of area array packages and is based on surveys of literature from industry and academia. For high-reliability applications, the limited data that exists will be presented. Most data from industry deals with mechanical fatigue caused by four-point bend tests, as well as from drop tests for hand-held electronics; the most recent data will be presented, along with a brief background of prior literature. Understanding the key design guidelines and failure mechanisms from past tests is critical to developing an approach that will minimize future failures. Additional specific testing enables low-risk insertion of these advanced electronic packages.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 2200G microprocessor with integrated graphics. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.
Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.
Radon daughter plate-out may pose a fundamental limitation to realizing large-scale superconducting quantum computers. Radon daughters plated-out onto a superconducting qubit chip can decay, releasing energy into the substrate, producing phonons. Phonon induced quasiparticles generate bit flip errors and reduce coherence times. We seek to increase plate-out on chips to enable future study of the impact of Radon on coherence times. In this project, we utilize COMSOL Multiphysics simulations to finalize design for a device to increase radon plate-out.
The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.
We present a novel method of FPGA TID testing that measures propagation delay between flip-flops operating at maximum speed. Measurement is performed on-chip at-speed and provides a key design metric when building system-critical synchronous designs.
A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.
Deep neural networks use skip connections to improve training convergence. However, these skip connections are costly in hardware, requiring extra buffers and increasing on- and off-chip memory utilization and bandwidth requirements. In this article, we show that skip connections can be optimized for hardware when tackled with a hardware-software codesign approach. We argue that while a network’s skip connections are needed for the network to learn, they can later be removed or shortened to provide a more hardware-efficient implementation with minimal to no accuracy loss. We introduceTailor, a codesign tool whose hardware-aware training algorithm gradually removes or shortens a fully trained network’s skip connections to lower the hardware cost.Tailorimproves resource utilization by up to 34% for block random access memories (BRAMs), 13% for flip-flops (FFs), and 16% for look-up tables (LUTs) for on-chip, dataflow-style architectures.Tailorincreases performance by 30% and reduces memory bandwidth by 45% for a two-dimensional processing element array architecture.
The ETROC2, the first full size and full functionality prototype chip for the CMS Endcap Timing Layer readout, is strategically designed to meet the SEE immunity requirements of detector operation with the low power constraint. The triplicated periphery and pixel I2C configuration registers are designed with self-correction feature. The pixel readout control is centralized in the global readout and fully triplicated. The pixel readout is not triplicated, instead protected with power-efficient one-bit correction Hamming code. The TMR protection of the on-pixel threshold calibration can be turned off allowing the detection of the beam spot during the beam test by checking the bit-flips of the internal memory cells. In the initial proton beam test in January 2024, the chip readout process did not hang throughout the tests. The Hamming code correction strategy works because the error corrected TDC data were observed in the data frames. The error-injection simulation is performed to analy ze the small number of bit-flips in the configuration registers. We also performed SEE testing with a heavy ion beam in April and the data analysis is ongoing. The detailed design on the SEE immunity and the testing as well as simulation results will be presented, including follow-up SEE testing results in May and June 2024.
Radon daughter plate-out may pose a fundamental limitation to realizing large-scale superconducting quantum computers. Radon daughters plated-out on a superconducting qubit can decay, releasing energy into the substrate, producing phonons. Phonon-induced quasiparticles then generate bit-flip errors and reduce coherence times. We seek to increase plate-out on chips to enable future study of the impact of radon on coherence times. In this project, we utilize COMSOL Multiphysics simulations to visualize electric field configuration and model ion transport to finalize design of a device to increase radon plate-out on qubit chips.
Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.