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Simple iterative accumulator combined with gated-carry, carry-completion detection, and skip-carry circuits produces three accumulators with decreased carry propagation times. Devices are used in machine control, measurement equipment, and computer applications to increase speed of binary addition. NAND gates are used in combining network.
Synchronous counter design incorporating cascaded binary stages driven by previous stages and inputs through NAND gates
A user's manual for a computer program DALG which generates test patterns for detecting faults in combinational logic circuits containing up to 200 logical gates is presented. The gates may be of logical types AND, OR, NAND, NOR, NOT, or Exclusive OR is presented. The faults may be any one gate or input struck at a fixed value (0 or 1). In addition to test pattern generation DALG will also determine whether or not the given test pattern will detect given faults in a circuit. Sample problems are given along with input data sheets and printed output to illustrate the capabilities of the program.
Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy electrons, and neutrons is discussed. The bipolar circuits were SE480 Q NAND gate, and a micropower frequency divider was used in electronic wrist watches. The MOS device was a dual p-channel MOSFET.
This research was designed to implement and extend a previously defined design automation system for the design of small digital structures. A description is included of the higher level language developed to describe systems as a sequence of register transfer operations. The system simulator which is used to determine if the original description is correct is also discussed. The design automation system produces tables describing the state transistions of the system and the operation of all registers. In addition all Boolean equations specifying system operation are minimized and converted to NAND gate structures. Suggestions for further extensions to the system are also given.
A carrier type transducer is supplied with a carrier wave via an audio amplifier, a filter, a frequency divider, and an oscillator. The carrier is modulated in accordance with the parameter being measured by the transducer and is fed to the input of a digital data system which may include a voltmeter. The output of the oscillator and the output of each stage of the divider are fed to an AND or a NAND gate and suitable variable and fixed delay circuits to the command input of the digital data system. With this arrangement, the digital data system is commanded to sample at the proper time so that the average voltage of the modulated carrier is measured. It may be utilized with ancillary circuitry for control of the parameter
Consisting of NAND gates, switch can be expanded to multipole input and can switch at frequencies up to 30MHz. Device uses digital integrated circuits to provide isolation between inputs and between input and output ports.
The application of high temperature accelerated test techniques was shown to be an effective method of microcircuit defect screening. Comprehensive microcircuit evaluations and a series of high temperature (473 K to 573 K) life tests demonstrated that a freak or early failure population of surface contaminated devices could be completely screened in thirty two hours of test at an ambient temperature of 523 K. Equivalent screening at 398 K, as prescribed by current Military and NASA specifications, would have required in excess of 1,500 hours of test. All testing was accomplished with a Texas Instruments' 54L10, low power triple-3 input NAND gate manufactured with a titanium- tungsten (Ti-W), Gold (Au) metallization system. A number of design and/or manufacturing anomalies were also noted with the Ti-W, Au metallization system. Further study of the exact nature and cause(s) of these anomalies is recommended prior to the use of microcircuits with Ti-W, Au metallization in long life/high reliability applications. Photomicrographs of tested circuits are included.
Output of latching four-input open-collector NAND gate is connected to isolating reed relay and intersection pushbutton. In matrix assembly, edge and corner circuits will require fewer gates, since they originate control lines. Collective row or column reset buttons operate on respective control-line originating points, and control-board disable switch operates on line connecting ground side of all intersection pushbuttons.
Failure detection and substitution of a spare module is provided in a system having a plurality of phase staggered modules connected in parallel to deliver regulated voltage from an unregulated source. Phase control signals applied to the active converter modules are applied to the spare module through NOR gates associated with and disabled by the power output of respective modules such that failure of any one enables its phase control signal to be applied to the spare module, thus controlling the spare module to operate in the phase position of the failed module. A NAND gate detects when any one active module fails and enables a gate in the spare module, thus activating the spare module.
A major problem in the qualification of integrated circuit cells and in the development of adequate tests for the circuits is to lack of information on the nature and density of fault models. Some of this information is being obtained from the test structures. In particular, the Pinhole Array Capacitor is providing values for the resistance of gate oxide shorts, and the Addressable Inverter Matrix is providing values for parameter distributions such as noise margins. Another CMOS fault mode, that of the open-gated transistor, is examined and the state of the transistors assessed. Preliminary results are described for a number of open-gated structures such as transistors, inverters, and NAND gates. Resistor faults are applied to various CMOS gates and the time responses are noted. The critical value for the resistive short to upset the gate response was determined.
Circuit synchronizes clock and gate signals within one-quarter of clock cycle. Clock synchronizer with one-quarter-cycle skew constructed from three flip-flops, three NAND gates, and inverter. In addition gate signal to which clock synchronized, circuit requires square-wave input at twice desired clock frequency.
Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.
This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.
A new logic family, which is immune to single event upsets, is described. Members of the logic family are capable of recovery, regardless of the shape of the upsetting event. Glitch propagation from an upset node is also blocked. Logic diagrams for an Inverter, Nor, Nand, and Complex Gates are provided. The logic family can be implemented in a standard, commercial CMOS process with no additional masks. DC, transient, static power, upset recovery and layout characteristics of the new family, based on a commercial 1 micron CMOS N-Well process, are described.
Logic isomers are labeled, 2-isomorphic graphs that implement the same logic function. Logic isomers may have significantly different power requirements even though they have the same number of transistors in the implementation. The power requirements of the isomers depend on the transition activity of the input signals. The power requirements of isomorphic graph isomers of n-input NAND and NOR gates are shown. Choosing the less power-consuming isomer instead of the others can yield significant power savings. Experimental results on a ripple-carry adder are presented to show that the implementation using the least power-consuming isomers requires approximately 10 percent less power than the implementation using the most power-consuming isomers. Simulations of other random logic designs also confirm that designs using less power-consuming isomers can reduce the logic power demand by approximately 10 percent as compared to designs using more power-consuming isomers.
The efficiency of the Simultaneous Analysis and Design (SAND) approach in the minimum weight optimization of structural systems subject to strength and displacement constraints as well as size side constraints is investigated. SAND allows for an optimization to take place in one single operation as opposed to the more traditional and sequential Nested Analysis and Design (NAND) method, where analyses and optimizations alternate. Thus, SAND has the advantage that the stiffness matrix is never factored during the optimization retaining its original sparsity. One of SAND's disadvantages is the increase in the number of design variables and in the associated number of constraint gradient evaluations. If SAND is to be an acceptable player in the optimization field, it is essential to investigate the efficiency of the method and to present a possible cure for any inherent deficiencies.
This paper presents a DOD E3 program overview on integrated circuit immunity. The topics include: 1) EMI Immunity Testing; 2) Threshold Definition; 3) Bias Tee Function; 4) Bias Tee Calibration Set-Up; 5) EDM Test Figure; 6) EMI Immunity Levels; 7) NAND vs. and Gate Immunity; 8) TTL vs. LS Immunity Levels; 9) TP vs. OC Immunity Levels; 10) 7805 Volt Reg Immunity; and 11) Seventies Chip Set. This paper is presented in viewgraph form.