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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Theoretical analysis of Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.

Hutchby, J. A.↗
NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗
NASA NTRS1976

Introduction to basic solar cell measurements

The basic approaches to solar cell performance and diagnostic measurements are described. The light sources, equipment for I-V curve measurement, and the test conditions and procedures for performance measurement are detailed. Solar cell diagnostic tools discussed include analysis of I-V curves, series resistance and reverse saturation current determination, spectral response/quantum yield measurement, and diffusion length/lifetime determination.

Brandhorst, H. W., Jr.↗
NASA NTRS1977

Thermionic converter performance with oxide collectors

Thermionic converters using a variety of metal oxide collector surfaces have been fabricated and tested. Both work function and power output data are presented and evaluated. Oxides of barium, strontium, zinc, tungsten and titanium have been incorporated into a variable spacing converter. Tungsten oxide was found to give the highest converter performance and to furnish oxygen for the emitter at the same time. Oxygenated emitters operate at reduced cesium pressure with an increase in electrode spacing. Electron spectroscopy for chemical analysis (ESCA) performed on several tungsten oxide collectors showed cesium penetration of the oxide layer, possibly forming a cesium tungstate bronze. Titanium oxide showed high performance but did not furnish oxygen for the emitter; strontium oxide, in the form of a sprayed layer, appeared to dissociate in the presence of cesium. Sprayed coatings of barium and zinc oxides produced collector work functions of about 1.3 eV, but had excessive series resistance. Lanthanum hexaboride, in combination with oxygen introduced through a silver tube, and cesium produced a low work function collector and better than average performance.

Lieb, D.↗
NASA NTRS1978

Basic mechanisms study for MIS solar cell structures on GaAs

The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

Fonash, S. J.↗
NASA NTRS1977

A theoretical analysis of the current-voltage characteristics of solar cells

The correlation of theoretical and experimental data is discussed along with the development of a complete solar cell analysis. The dark current-voltage characteristics, and the parameters for solar cells are analyzed. The series resistance, and impurity gradient effects on solar cells were studied, the effects of nonuniformities on solar cell performance were analyzed.

Fang, R. C. Y.↗
NASA NTRS1976

Basic corrections to predictions of solar cell performance required by nonlinearities

The superposition principle is used to derive the approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. The derivation requires the linearity of the boundary value problems that underlie the electrical characteristics. The shifting approximation is invalid if considerable photocurrent and considerable dark current both occur within the junction space-charge region; it is invalid also if sizable series resistance is present or if high-injection concentrations of holes and electrons exist within the quasi-neutral regions.

Lindholm, F. A.↗
NASA NTRS1977

MIS diode structure in As/+/ implanted CdS

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

Hutchby, J. A.↗
NASA NTRS1978

Primordial metamorphism of asteroids via electrical induction in a T Tauri-like solar wind

Possible heating mechanisms for an intense thermal cycle in the early solar system are considered, and inductive asteroid heating in a T Tauri environment is examined. Calculations of thermal models based on recent measurements of the electrical conductivity of carbonaceous meteorites are reported which are presumably more representative of actual conditions in the early solar nebula. Asteroidal thermal evolution is computed using a highly simplified code that restricts induction to the dc limit of the TM mode, approximates the complete unipolar-generation differential equation by a simple series-resistance model, and restricts the modeling of thermal conduction to a calculation of heat transfer across a thin planar shell of given thickness increasing with time, which blankets a body assumed to have an isothermal core. A grid of results is obtained for 20 combinations of asteroid radius and solar distance representing the populaton of asteroids. It is found that there is a relative heating maximum with respect to body radius, that this effect is due to the operation of two distinct heating-rate restrictions which have opposite radius dependences, and that the maximum current density is roughly proportional to the inverse of interior radius.

Herbert, F.↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
NASA NTRS1977

Studies of silicon pn junction solar cells

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Lindholm, F. A.↗
NASA NTRS1977

Improvement of the mechanical and thermal properties of the metallized polycarbonate capacitor

Changes were studied which enable polycarbonate metallized film capacitors to withstand 500 thermal shock cycles while maintaining electrical characteristic integrity without becoming intermittent, and without losing hermeticity. The task was for metallized polycarbonate film capacitors designed to meet MIL-C-39022/9 and MIL-C-83421/1. The capacitor design improvements implemented were the insertion of a rubber washer between spray cap and end seal and the utilization of a flexible lead assembly. One hundred fifty capacitors incorporating the design improvements were manufactured and subsequently underwent 500 thermal shock cycles. One hundred forty nine capacitors survived the test. Failure analysis revealed that the lone failure was due to a poor solder joint, initially detected in pre-screening tests as having poor dissipation factor and equivalent series resistance measurement readings.

Kellerman, H. J.↗
NASA NTRS1979

Optimization of tapered busses for solar cell contacts

Some fraction of the power produced by a solar cell is necessarily lost by series resistance associated with the metallized contact grid and by shadowing of cell active area by the grid. There are several approaches to reducing these losses, such as choosing a more efficient pattern, optimizing line spacing, and using tapered buses. The present paper analyzes tapered lines and derives from this analysis a theoretical lower bound to metallization power loss, independent of pattern chosen.

Landis, G. A.↗
NASA NTRS1980

Study of surge current effects on solid tantalum capacitors

Results are presented of a 2,000 hour cycled life test program conducted to determine the effect of short term surge current screening on approximately 47 micron f/volt solid tantalum capacitors. The format provides average values and standard deviations of the parameters, capacitance, dissipation factor, and equivalent series resistance at 120 Hz, 1KHz, abd 40 KHz.

Source record↗
NASA NTRS1979

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Kerr, A. R.↗
NASA NTRS1981

Internal fuse modules for solid tantalum capacitors

Miniature fuse modules were designed for and incorporated into two styles of solid tantalum capacitors. One is an epoxy molded, radial leaded, high frequency decoupling capacitor; the other is an hermetically sealed device with axial lead wires. The fusible element for both devices consists of a fine bimetallic wire which reacts exothermically upon reaching a critical temperature and then disintegrates. The desirability of having fused devices is discussed and design constraints, in particular those which minimize inductance and series resistance while optimizing fuse actuation characteristics, are reviewed. Factors affecting the amount of energy required to actuate the fuse and reliability of acuation are identified.

Dematos, H. V.↗
NASA NTRS1981

High-frequency measurements of multilayer ceramic capacitors

A resonant coaxial transmission line, short circuited at one end and open circuited at the other, whose fundamental resonant frequency and Q factor are known, is perturbed with a test capacitor connected either in series at the shorted end of the line, or in shunt at the open end. Measuring the Q factor of the system with the delta f technique yields the effective series resistance, capacitance, and the Q factor of the test specimen. This method of measurement has the advantage that there are no adjustable elements to alter circuit conditions in an unprescribed way, the only variable is the frequency which can be measured with an uncertainty of less than 1 ppm, the loss of the line as a function of frequency is quite predictable, and the Q factor of the line can be made sufficiently high to support accurate measurements of low loss capacitors.

Lafferty, R. E.↗
NASA NTRS1981

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗