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87 records · Page 5

Update on parts SEE suspectibility from heavy ions

JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.

Nichols, D. K.↗

Current Radiation Issues for Programmable Elements and Devices

The purpose of this presentation is to discuss the COTS performance, clock upset / single event transient, device configuration upset, antifuse hardening, heavy ion SEU, total dose, proton sensitivities, latchup, and additional information and data.

Katz, Richard↗

Microcircuit radiation effects databank

This databank is the collation of radiation test data submitted by many testers and serves as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. It contains radiation sensitivity results from ground tests and is divided into two sections. Section A lists total dose damage information, and section B lists single event upset cross sections, I.E., the probability of a soft error (bit flip) or of a hard error (latchup).

Source record↗

Microcircuit radiation effects databank

Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

Source record↗

Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings

Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.

Source record↗

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗

Latest trends in parts SEP susceptibility from heavy ions

JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.

Nichols, Donald K.↗

Single-Event-Upset Studies: A Compilation

Document summarizes 15 studies of single-event upsets covering 60 different types of semiconductor devices. Studies discussed in document include verification of basic reactions induced by heavy ions and protons and surveys of latchup and bit-flip susceptibility of several types of devices and device-fabrication technologies.

Nichols, D. K.↗

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

Nichols, Donald K.↗

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Poivey, Christian↗

Verification and Quantification of Single Event Effects on High Speed SRAM in Terrestrial Environments

As integrated circuits become more sensitive to charged particles and neutrons, anomalous performance due to single event effects (SEE) is a concern and requires experimental verification and quantification. The Center for Applied Radiation Research (CARR) at Prairie View A&M University has developed experiments as a participant in the NASA ER-2 Flight Program, the APEX balloon flight program and the Student Launch Program. Other high altitude and ground level experiments of interest to DoD and commercial applications are being developed. The experiment characterizes the SEE behavior of high speed and high density SRAM's. The system includes a PC-104 computer unit, an optical drive for storage, a test board with the components under test, and a latchup detection and reset unit. The test program will continuously monitor the stored checkerboard data pattern in the SW and record errors. Since both the computer and the optical drive contain integrated circuits, they are also vulnerable to radiation effects. A latchup detection unit with discrete components will monitor the test program and reset the system when necessary. The first results will be obtained from the NASA ER-2 flights, which are now planned to take place in early 1998 from Dryden Research Center in California. The series of flights, at altitudes up to 70,000 feet, and a variety of flight profiles should yield a distribution of conditions for correlating SEES. SEE measurements will be performed from the time of aircraft power-up on the ground throughout the flight regime until systems power-off after landing.

Huff, H.↗

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗