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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Electrification: 2023 Final Progress Report

This project proposes to develop a high-power density, high speed traction motor architecture called QMag, driven by a high-power density motor drive inverter using silicon carbide semiconductor devices. This new architecture will achieve the efficiency and power density targets by means of innovative winding and rotor structures, high bandwidth controls, and advanced thermal management solutions. The project team will pursue the goals of the project systematically, through Finite Element Analysis for machine design, through simulation and co-simulation techniques for power electronics and controls evaluation, and finally system design, fabrication, testing and evaluation. If this project successfully achieves and demonstrates the DOE targets for power density, cost, and reliability, the technology has the potential to become a core enabler of the flagship higher power product portfolio in commercial traction businesses, which has so far been confined to DC, induction, Brush Less DC (BLDC), Permanent Magnet AC (PMAC), and reluctance machines.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1984

A new FET-bipolar combinational power semiconductor switch

A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

Chen, D. Y.↗
DOE OSTI2022

Semiconductor: Supply Chain Deep Dive Assessment

In February 2021, President Biden signed Executive Order (EO) 14017, “America’s Supply Chains,” directing seven executive agencies to evaluate the resilience and security of the nation’s critical supply chains and to craft strategies for six industrial bases that underpin America’s economic and national security. See Sec. 3(b) of E.O. 14017. As part of the one-year response to EO 14017, the U.S. Department of Energy (DOE), through the national laboratories, conducted evaluations of the supply chains that encompass the Energy Sector Industrial Base, with a particular focus on technologies required to decarbonize the U.S. by 2050. This report focuses on one of these technologies, semiconductors, both conventional and wide bandgap (WBG) power electronics (PE). As noted in the 100-Day report, conventional semiconductors are a keystone technology that are essential for the operation of nearly every electronic device, including those that are critical to decarbonization, such as electric vehicles (EVs), industrial and building applications, and electricity generation and end use. In addition, power electronics have been applied to industrial equipment to improve energy efficiency and enhance controllability. Power electronics have also been used to improve the reliability of data centers and critical infrastructure, including the stabilization of the electric grid while subjected to disturbances. Increasingly, power electronics are being used to integrate renewable energy and battery storage systems, enabling new grid services and the development of microgrids. It is estimated that 30% of the electricity used in the U.S. passes through power electronic devices, and studies suggest that this number could reach 80% as power electronics are deployed in more markets. Nearly all forms of electrified transportation will depend on power electronics. Power electronic systems utilize high-capacity semiconductor devices at their core. The continued growth in power electronics depends on sustained innovation in the semiconductor industry.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
NASA NTRS1982

Component technology for space power systems

The Lewis/OAST program for the development of Component Technology for Space Power Systems is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and thermal control devices. Examples of progress in each of the five areas is discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 mu sec rise and fall time are presented. A new class of semiconductor devices with a possibility of switching 1000 000 V is described. Several 100 kW rotary power transformer designs and a 25 kW, 20 kHz transformer weighting 3.2 kg have been developed. Progress on the creation of diamond-like films for thermal devices and intercalated carbon fibers with the strength of steel and the conductivity of copper at one third the mass of copper is presented.

Finke, R.↗
NASA NTRS1982

Component technology for space power systems

Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.

Finke, R. C.↗
DOE OSTI2024

Automated Algorithms for Screening Electronic Parts for Aging using Power Spectra Analysis (PSA) Data

Understanding the age of semiconductor parts being built into devices and systems is of interest for manufacturing quality control. Power spectrum analysis (PSA) is a fast, non-destructive, sensitive method for examining semiconductor parts. This talk will cover the use of multivariate analysis on both PSA data and conventional current-voltage data generated prior to PSA analysis to create algorithms that can be automated to screen semiconductor parts for aging.

Multari, Rosalie A↗
DOE OSTI2022

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect transistors. We show that the technique is sensitive to both the Pb0 and Pb1 dangling bond centers and that the presence of both centers can be inferred through NZFMR via hyperfine interactions with the central 29Si atoms of the dangling bonds. The NZFMR results also provide evidence for the redistribution of mobile hydrogen atoms at the Si/SiO2 interface and also a potential change in the average dipolar coupling constant between electrons in neighboring defects. This work shows that NZFMR offers significant analytical power for studying technologically relevant semiconductor device reliability problems and has advantages in experimental simplicity over comparable techniques.

Moxim, Stephen J. (ORCID:0000000309659904)↗
NASA NTRS1998

Computational Nanoelectronics and Nanotechnology at NASA ARC

Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technology are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotechnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.

Saini, Subhash↗
NASA NTRS1998

Computational Nanoelectronics and Nanotechnology at NASA ARC

Both physical and economic considerations indicate that the scaling era of CMOS will run out of steam around the year 2010. However, physical laws also indicate that it is possible to compute at a rate of a billion times present speeds with the expenditure of only one Watt of electrical power. NASA has long-term needs where ultra-small semiconductor devices are needed for critical applications: high performance, low power, compact computers for intelligent autonomous vehicles and Petaflop computing technolpgy are some key examples. To advance the design, development, and production of future generation micro- and nano-devices, IT Modeling and Simulation Group has been started at NASA Ames with a goal to develop an integrated simulation environment that addresses problems related to nanoelectronics and molecular nanotecnology. Overview of nanoelectronics and nanotechnology research activities being carried out at Ames Research Center will be presented. We will also present the vision and the research objectives of the IT Modeling and Simulation Group including the applications of nanoelectronic based devices relevant to NASA missions.

Saini, Subhash↗
NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗
DOE OSTI2023

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗
DOE OSTI2020

Point and extended defects in heteroepitaxial 𝛽−G⁡a 2 ⁢O 3 films

G⁡a 2 ⁢O 3 is emerging as an excellent potential semiconductor for high power and optoelectronic devices. However, the successful development of G⁡a 2⁢ O 3 in a wide range of applications requires a full understanding of the role and nature of its point and extended defects. Here, in this work, high quality epitaxial G⁡a 2 ⁢O 3 films were grown on sapphire substrates by metal-organic chemical vapor deposition and fully characterized in terms of structural, optical, and electrical properties. Then defects in the films were investigated by a combination of depth-resolved Doppler broadening and lifetime of positron annihilation spectroscopies and thermally stimulated emission (TSE). Positron annihilation techniques can provide information about the nature and concentration of defects in the films, while TSE reveals the energy level of defects in the bandgap. Despite very good structural properties, the films exhibit short positron diffusion length, which is an indication of high defect density and long positron lifetime, a sign for the formation of Ga vacancy related defects and large vacancy clusters. These defects act as deep and shallow traps for charge carriers as revealed from TSE, which explains the reason behind the difficulty of developing conductive G⁡a 2 ⁢O 3 films on non-native substrates. Positron lifetime measurements also show nonuniform distribution of vacancy clusters throughout the film depth. Further, the work investigates the modification of defect nature and properties through thermal treatment in various environments. It demonstrates the sensitivity of G⁡a 2 ⁢O 3 microstructures to the growth and thermal treatment environments and the significant effect of modifying defect structure on the bandgap and optical and electrical properties of G⁡a 2 ⁢O 3 .

defects↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1980

JANTX2N4150 transistor

Report evaluates effects of power and temperature overstress on General Semiconductor and Transitron devices. General Semiconductor lot exceeded 50 percent failure 500 hours into 125 percent maximum rated power test. Catastrophic failure rates differed between manufacturers. Modes of failure are analyzed.

Source record↗
DOE OSTI2025

Intercell Power Transformer for Power Balancing of Polyphase Wireless Power Transfer Systems

Polyphase wireless power transfer (PWPT) systems experience receiver side imbalances in misaligned conditions. This paper proposes a method for power balancing in PWPT systems, specifically addressing the challenges caused by receivers coil unequal coupling. An intercell power transformer (IPT) is introduced at the receiver side to mitigate the effects of coil mismatch. Simulations of the PWPT system incorporating IPT demonstrate its effectiveness in enhancing power distribution. For voltage-fed rectifiers (VFR), the IPT increases the conduction angle, resulting in higher output power. In current- fed rectifiers (CFR), the IPT promotes uniform power sharing among rectifiers, thereby reducing electrical stress on semiconductor devices and passive components. Simulation results indicate that, under coil misalignment, the IPT improves output power by approximately 49% for VFRs and 44% for CFRs compared to conventional PWPT systems without IPT.

Wojda, Rafal [ORNL] (ORCID:0000000286609268)↗