Search NASA⌕ Search

SEARCH · Search NASA

Results for “semiconductor device measurement”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Investigation of advanced fault insertion and simulator methods

The cooperative agreement partly supported research leading to the open-literature publication cited. Additional efforts under the agreement included research into fault modeling of semiconductor devices. Results of this research are presented in this report which is summarized in the following paragraphs. As a result of the cited research, it appears that semiconductor failure mechanism data is abundant but of little use in developing pin-level device models. Failure mode data on the other hand does exist but is too sparse to be of any statistical use in developing fault models. What is significant in the failure mode data is that, unlike classical logic, MSI and LSI devices do exhibit more than 'stuck-at' and open/short failure modes. Specifically they are dominated by parametric failures and functional anomalies that can include intermittent faults and multiple-pin failures. The report discusses methods of developing composite pin-level models based on extrapolation of semiconductor device failure mechanisms, failure modes, results of temperature stress testing and functional modeling. Limitations of this model particularly with regard to determination of fault detection coverage and latency time measurement are discussed. Indicated research directions are presented.

Dunn, W. R.↗
NASA NTRS1979

InP and GaAs characterization with variable stoichiometry obtained by molecular spray

Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

Massies, J.↗
NASA NTRS1998

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗
NASA NTRS2003

Improved Process for Fabricating Carbon Nanotube Probes

An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.

Stevens, R.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗
NASA NTRS1992

Sub-Kelvin resistance thermometer

A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting pad bonded near the other end of the heat sink wafer; and an oblong doped semiconductor crystal such as germanium. The oblong doped semiconductor crystal has a third conducting pad bonded on its bottom surface with the oblong doped semiconductor crystal bonded to the heat sink wafer by having the fourth conducting pad bonded to the first conducting pad. A wire is bonded between the second and third conducting pads. Current and voltage wires bonded to the first and second conducting pads measure the change in resistance of the oblong doped semiconductor crystal; this indicates the temperature of the object whose temperature is to be measured.

Castles, Stephen H.↗
NASA NTRS2012

Spectroscopic Chemical Analysis Methods and Apparatus

This invention relates to non-contact spectroscopic methods and apparatus for performing chemical analysis and the ideal wavelengths and sources needed for this analysis. It employs deep ultraviolet (200- to 300-nm spectral range) electron-beam-pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor lightemitting devices, and hollow cathode metal ion lasers. Three achieved goals for this innovation are to reduce the size (under 20 L), reduce the weight [under 100 lb (.45 kg)], and reduce the power consumption (under 100 W). This method can be used in microscope or macroscope to provide measurement of Raman and/or native fluorescence emission spectra either by point-by-point measurement, or by global imaging of emissions within specific ultraviolet spectral bands. In other embodiments, the method can be used in analytical instruments such as capillary electrophoresis, capillary electro-chromatography, high-performance liquid chromatography, flow cytometry, and related instruments for detection and identification of unknown analytes using a combination of native fluorescence and/or Raman spectroscopic methods. This design provides an electron-beampumped semiconductor radiation-producing method, or source, that can emit at a wavelength (or wavelengths) below 300 nm, e.g. in the deep ultraviolet between about 200 and 300 nm, and more preferably less than 260 nm. In some variations, the method is to produce incoherent radiation, while in other implementations it produces laser radiation. In some variations, this object is achieved by using an AlGaN emission medium, while in other implementations a diamond emission medium may be used. This instrument irradiates a sample with deep UV radiation, and then uses an improved filter for separating wavelengths to be detected. This provides a multi-stage analysis of the sample. To avoid the difficulties related to producing deep UV semiconductor sources, a pumping approach has been developed that uses ballistic electron beam injection directly into the active region of a wide bandgap semiconductor material.

Hug, William F.↗
NASA NTRS1982

Pulsed plasma thruster ignitor plug ignition characteristics

The operating characteristics of the semiconductor spark gap ignitor plug used to initiate the discharge in a pulsed plasma thruster are investigated. Current and voltage waveform measurements for the ignitor plug alone, and for the plug mounted in the thruster cathode indicate an average dynamic impedance of 0.2 ohms for a wide range of operating conditions, and a trigger circuit energy transfer efficiency to the plug on the order of 25%. Two modes of trigger ignition are found which are related to the rise time of the applied voltage pulse. Analysis of plasma characteristics reveals plug erosion to occur primarily in the semiconductor and anode regions, by mechanisms including plug metal embrittlement, plasma sputtering and vaporization caused by the discharge current pulse. Measurements also indicate a plume velocity on the order of 1580,000 cm/sec which increases with trigger circuit stored energy. The results establish levels of performance for future applications of semiconductor spark gap ignitor plugs in plasma devices.

Brady, M. E.↗
NASA NTRS2014

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

Kroupa, M.↗
NASA NTRS1994

Instrumentation for X-ray Astronomy

Less than five decades ago, the first X-ray observations of the sky were made using simple devices such as film and geiger counters with crude collimators. These instruments were carried aloft by sounding rockets and made observations lasting only a few minutes at most. Today, orbiting observatories, utilizing high-resolution charged coupled devices (CCD's) at the focus of arc sec optics, have lifetimes measured in years. To maintain the pace of discovery in X-ray astronomy, detectors must continue to evolve into devices of ever increasing sensitivity and sophistication. Further progress depends upon a host of technologies: grazing incidence optics, proportional counters, semiconductors, calorimeters, etc. In this article we present a brief qualitative overview of these technologies and of the principles behind them, as well as some examples of how they are employed in scientific missions for X-ray observations at energies up to 100 keV.

Ramsey, Brian D.↗
NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗
NASA NTRS1997

High performance thermoelectric materials and methods of preparation

Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.), and low thermal conductivities (as low as 15 mW/cmK). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a two fold increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Fleurial, Jean-Pierre↗
NASA NTRS2006

NASA Tech Briefs, October 2006

Topics covered include: Protein Sensors Based on Optical Ring Resonators; Phase Sensor for Aligning a Segmented Telescope Mirror; Control Software for Advanced Video Guidance Sensor; Generating Control Commands From Gestures Sensed by EMG; Multiple-Flat-Panel System Displays Multidimensional Data; 3D X-Ray Luggage-Screening System; Probe Station and Near-Field Scanner for Testing Antennas; Photodetector Arrays for Multicolor Visible/Infrared Imaging; Semiconductor Bolometers Give Background-Limited Performance; Multichannel X-Band Dielectric-Resonator Oscillator; Automatic Alignment of Displacement-Measuring Interferometer; Earth Observing System Data Gateway; Power User Interface; Mercury Shopping Cart Interface; Cassini Archive Tracking System; Architecture Adaptive Computing Environment; Computing Fault Displacements from Surface Deformations; Oxygen-Permeable, Hydrophobic Membranes of Silanized alpha-Al2O3; SiC Composite Turbine Vanes; Retaining Device for the Interior Structure of a Spacecraft Payload; Tool for Torquing Circular Electrical-Connector Collars; System for Continuous Deaeration of Hydraulic Oil; Solar-Powered Cooler and Heater for an Automobile Interior; Improved Oxygen-Beam Texturing of Glucose-Monitoring Optics; Tool for Two Types of Friction Stir Welding; Stationary Apparatus Would Apply Forces of Walking to Feet; Instrument Would Detect and Collect Biological Aerosols; Boundary Condition for Modeling Semiconductor Nanostructures; Miniature Distillation Column for Producing LOX From Air; Even Illumination from Fiber-Optic-Coupled Laser Diodes; Optically Driven Deformable Mirrors; Algorithm for Automated Detection of Edges of Clouds; Exploiting Quantum Resonance to Solve Combinatorial Problems; Hybrid Terrain Database; On Release of Microbe-Laden Particles from Mars Landers; A Concept for Run-Time Support of the Chapel Language; Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x); and Spacecraft Escape Capsule.

Source record↗
NASA NTRS1981

Planar Rowland spectrometer for fiber-optic wavelength demultiplexing

A planar Rowland spectrometer was fabricated and characterized as a wavelength demultiplexer for multimode fiber-optic applications. The spectrometer consisted of a planar multimode glass waveguide with two curved end faces and a cylindrical concave attached to one of the end faces. Semiconductor lasers with wavelengths between 0.825 and 0.845 micron were used for the measurements. Cross-talk isolation between two adjacent fibers with center-to-center separation of 175 microns (100 A in wavelength difference) was measured to be 18 dB. The device's performance was limited by grating diffraction efficiency, optical aberration, waveguide dispersion, and waveguide losses.

Yen, H. W.↗
NASA NTRSDate not supplied

Wide Band Gap Radiation Detectors for Deep Space Science

Understanding how the Sun, Earth, and other objects in the solar system interact with the space radiation environment is crucial for improving activities of humans on Earth and in space. Low-power, low-noise, multidirectional robust detectors for detecting ions with a wide range of mass and energies will provide a more complete understanding of space environment physics. To meet these challenges, new ion detectors based on wide band gap (WBG) semiconductors are being developed for integration on a variety of deep space platforms. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies to enable improved instruments for space science missions. New detector technologies being developed at GRC include SiC solid-state devices as practical robust, thermally stable large area detectors for LET measurements in compact, stacked charged particle telescope. The low-noise, thermally stable nature of the WBG detectors allows a small multidirectional array of charged particle telescopes to be packed in a 6U CubeSat without active cooling for operation in lunar orbit or deep space. Using a full variety of different WBG detectors, an extremely compact instrument to provide multi-directional, comprehensive (composition, velocity, and direction) in-situ measurements of heavy ions in space plasma environments can be realized.

ion detectors↗
NASA NTRS1971

NASA multidisciplinary research grant

Research is discussed in the multidisciplinary areas of space and planetary science; materials and radiation; systems, instrumentation, and structures; and technology and man. Highlights are identified as an alpha-recoil track method of archeological dating; infrared astronomical telescope; reaction rates data, semiconductor radiation detectors, and analysis of time-dependent systems; Gunn effect devices for microwave generation and detection, mode-locked lasers, and radiation theory; and the application of a satellite communication system to educational development. Detectors to be flown on Apollo 16 to measure heavy particle flux in the solar wind and to be part of the HEAO-A experiment on extremely heavy nuclei in cosmic rays were developed. The impact of the multidisciplinary research on university activities is described, and individual departmental reports are included.

Source record↗