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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Superconducting Radio Frequency Resonators for Quantum Computing: A Short Review

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high-quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. Here, we present a short review of current microwave technology used in quantum computers and progress towards the 3D resonators to enhance thecoherence time.

Dhakal, Pashupati↗
DOE OSTI2021

3D superconducting radio-frequency resonators for quantum computing

Superconducting radiofrequency (SRF) technology is being used not only in discovery science programs and basic research but also for several applications that benefit society more directly. The advantage of superconducting resonators over those made of normal-conducting metal is their ability to store electromagnetic energy with much lower dissipation. The high quality factor and longer dissipation time provided by these superconducting resonators can deliver superior performance. Currently, the quantum processing architecture uses resonators and interconnecting circuits operating in the microwave regime with superconducting strip-line technology and low noise electronic devices for switching and communication. The performance of these devices can be enhanced by embedding them in 3D SRF cavity resonators to prolong the coherence time, which improves the utility of the device by reducing error rates and allowing more manipulations (calculations) before the quantum state decays. In this presentation, I will review the current technology and progress towards the three dimensional SRF cavities to enhance the coherence time.

Dhakal, Pashupati↗
DOE OSTI2021

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Herein, proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The Demonstration of Power over Ethernet (PoE) Technologies in Commercial and Institutional Buildings

Power over Ethernet (PoE) technologies are currently ubiquitous in offices in the form of phones, access points, and IP security cameras. They are systems that are familiar to and managed by on-site IT staff. As low voltage DC-power capabilities have increased with the advancement of IT network switches within offices, PoE devices are now being integrated across additional building systems, including lighting, computers, and HVAC controls. The connection of PoE devices to network switches offers the opportunity for energy monitoring and management to be performed through IT network management software. Data and results from technology validations of PoE equipment remain very limited. This lack of information hinders expansion of PoE as an energy management strategy as its benefits and challenges have been insufficiently quantified in real-world scenarios. This final report presents the findings of a DOE/State of Minnesota-funded project that demonstrated and assessed the energy and non-energy benefits of Power over Ethernet (PoE) technologies at six sites: two offices, three schools, and a hotel. The goals of the demonstrations were to: (1) assess the receptiveness of commercial and institutional markets to these new technologies, (2) demonstrate the feasibility of PoE technologies within standard design/construction practices and commercial codes, (3) assess the energy and cost savings opportunities of these technologies, (4) provide energy management opportunities where not typically available, and (5) formulate approaches to spur adoption of these technologies in the marketplace.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Method and system for microwave mixer phase response measurement

A system, method and apparatus for mixer phase response measurement comprises a vector network analyzer connectable to a device under test, an additional device connected to the analyzer the additional device configured to have an equal phase response to that of the device under test, a local oscillator connected to the device under test and the additional device, a series of switches connecting the device under test and the additional device to a vector voltmeter, and a reference generator connected to the vector voltmeter.

Frolov, Daniil↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Voltage positioning using co-optimization of controllable grid assets in radial networks

With increasing penetration of solar PV, some distribution feeders are experiencing highly variable net-load flows and even reverse flows. To optimize distribution systems under such conditions, the scheduling of mechanical devices, such as OLTCs and capacitor banks, needs to take into account forecasted solar PV and actual grid conditions. However, these legacy switching assets are operated on a daily or hourly timescale, due to the wear and tear associated with mechanical switching, which makes them unsuitable for real-time control. Therefore, there is a natural timescale- separation between these slower mechanical assets and the responsive nature of inverter-based resources. In this paper, we present a network admissible convex formulation for holistically scheduling controllable grid assets to position voltage optimally against solar PV. An optimal hourly schedule is presented that utilizes mechanical resources to position the predicted voltages close to nominal values, while minimizing the use of inverter-based resources (i.e., DERs), making them available for control at a faster time-scale (after the uncertainty reveals itself). A convex, inner approximation of the OPF problem is adapted to a mixed-integer linear program that minimizes voltage deviations from nominal (i.e., maximizes voltage margins). Here, the resulting OPF solution respects all the network constraints and is, hence, robust against modeling simplifications. Simulation based analysis on IEEE distribution feeders validates the approach.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Voltage-controlled spin–orbit torque switching in W/CoFeB/MgO

Voltage control of magnetism and spintronics have been highly desirable but rarely realized. In this work, we show voltage-controlled spin–orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO 3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first- and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

3D Printing of Functional Hydrogel Devices for Screenings of Membrane Permeability and Selectivity

Developing a fundamental understanding of the effects of varying ligand chemistries on mass transport rates is key to designing membranes with solute-specific selectivity. While permeation cells offer a robust method to characterize membrane performance, they are limited to assessing a single membrane chemistry or salt solution per test. As a result, investigating the effects of varying ligand chemistries on membrane performance can be a tedious process, involving both the preparation of multiple samples and numerous, time-consuming permeation tests. This study uses digital light processing (DLP) 3D printing to fabricate a millifluidic flow-based permeation device made from a hydrogel active ester network that can be easily functionalized with ion-selective ligands. Without the need for bonding or assembly steps, ligands can be introduced and tested in the permeation device by simply injecting a small volume of a ligand solution. Various salt concentrations and molecular species can be cycled through a single device by switching the solution feeding into the salt reservoir, thereby reducing the number of samples needed for permeability and selectivity screenings. This research sets the groundwork for formulation development and postprocessing methods to 3D-print functional millifluidic devices capable of assessing solute selectivity in membranes and polymer adsorbents for aqueous separations. In this work, comparable salt permeability trends were observed with both 3D-printed devices and traditional assays. Devices were functionalized with an imidazole ligand to investigate salt permeability and selectivity of monovalent and divalent salts. Measurements showed increasing permeability for monovalent salts (NaCl) relative to divalent salts (MgCl 2 , CuCl 2 ) in functionalized membranes, with higher monovalent/divalent selectivity at increasing imidazole grafting densities. Here, the methods and findings described here represent a step toward developing higher-throughput methods with 3D-printed devices for screening the effects of ligand chemistry on mass transport rates in membrane materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Enhanced Optical Contrast and Switching in Near‐Infrared Electrochromic Devices by Optimizing Conjugated Polymer Oligo(Ethylene Glycol) Sidechain Content and Gel Electrolyte Composition

Abstract A detailed investigation addressing the effects of functionalizing conjugated polymers with oligo(ethylene glycol) (EG n ) sidechains on the performance and polymer‐electrolyte compatibility of electrochromic devices (ECDs) is reported. The electrochemistry for a series of donor‐acceptor copolymers having near‐infrared (NIR)‐optical absorption, where the donor fragment is 3,4‐ethylenedioxythiophene (EDOT) or an EG n functionalized bithiophene (g2T) and the acceptor fragment is diketopyrrolopyrrole (DPP) functionalized with branched alkyl or EG n sidechains, is extensively probed. ECDs are next fabricated and it is found that EG n sidechain incorporation must be finely balanced to promote polymer‐electrolyte compatibility and provide efficient ion exchange. Proper electrolyte‐cation pairing and polymer structural tuning affords a 2x increase in optical contrast (from 12% to 24%) and >60x reduction in switching time (from 20 to 0.3 s). Atomic force microscopy (AFM)/grazing incidence wide‐angle X‐ray scattering (GIWAXS) characterization of the polymer film morphology/microstructure reveals that an over‐abundance of EG n sidechains generates large polymer crystallites, which can suppress ion exchange. Lastly, time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) indicates sidechain/electrolyte identity does not influence the electrolyte penetration depth into the films, and EG n sidechain inclusion increases electrolyte cation uptake. The material structural design insight and guidelines regarding the polymer‐electrolyte ion insertion/expulsion dynamics reported here should be of significant utility for developing next‐generation mixed ionic‐electronic conducting materials.

Chemistry↗
DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be controlled by read and write voltages. The individual FTJs are measured to have a tunneling electroresistance of 10 during the read state without significant filament conduction formation and reasonable ferroelectric performance. Endurance and remanent polarizations of up to 10 5 cycles and 20 μC/cm 2 , respectively, are measured and are shown to be dependent on the cycling voltage. Electrical measurements demonstrate how magnitude of the write pulse can modulate the high state resistance and the read pulse influences both resistance values as well as separation of resistance states. Then, by using two opposite switching FTJ devices in series, a programmable nonvolatile resistor divider is demonstrated. Measurements of these two FTJ unit memory cells show wide applicability to a BEOL microfabrication process for a re-readable, rewritable, and nonvolatile memory cell.

42 ENGINEERING↗
DOE OSTI2020

Low Current and Analog Memristor with Ru as Mobile Species

The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 mu A), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

analog switching↗
DOE OSTI2021

Magnetic‐Field‐Switchable Laser via Optical Pumping of Rubrene

Abstract Volumetric optical imaging of magnetic fields is challenging with existing magneto‐optical materials, motivating the search for dyes with strong magnetic field interactions, distinct emission spectra, and an ability to withstand high photon flux and incorporation within samples. Here, the magnetic field effect on singlet‐exciton fission is exploited to demonstrate spatial imaging of magnetic fields in a thin film of rubrene. Doping rubrene with the high‐quantum yield dye dibenzotetraphenylperiflanthene (DBP) is shown to enable optically pumped, slab waveguide lasing. This laser is magnetic‐field‐switchable: when operated just below the lasing threshold, application of a 0.4 T magnetic field switches the device between nonlasing and lasing modes, accompanied by an intensity modulation of +360%. This is thought to be the first demonstration of a magnetically switchable laser, as well as the largest magnetically induced change in emission brightness in a singlet‐fission material to date. These results demonstrate that singlet‐fission materials are promising materials for magnetic sensing applications and could inspire a new class of magneto‐optical modulators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Origin of high optical contrast in zinc-zinc oxide electrodeposits for dynamic windows

The control of solar light and heat emission through windows is an important strategy for increasing the energy efficiency of buildings. Reversible Zn electrodeposition has recently emerged as a promising method for constructing electronically tintable robust dynamic windows. In Zn electrodeposits formed from dimethyl sulfoxide (DMSO) electrolytes during device tinting, we observe extraordinary absorption that is in excess of what is predicted by the Beer-Lambert law for a uniform Zn thin film. Here, the charge required to electroplate these films is abnormally low, significantly less than previously reported dynamic windows based on reversible metal electrodeposition, which facilitates the construction of large-area devices that switch uniformly. Finite-difference time-domain (FDTD) simulations are used to investigate the origin of this enhanced absorption, which arises from plasmonic effects among the Zn nanoparticles and ZnO dendrites in the film. The dielectric ZnO dendrites promote absorption via slit-like Zn-dielectric-Zn structures that from hybrid surface plasmon resonance at metal walls. Through these investigations, we provide design principles to construct low-charge and high-contrast metal and metal oxide-based dynamic windows.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2021

Vacuum system design, construction, and operation for the Cornell High Energy Synchrotron Source upgrade

During the summer and fall 2018, the Cornell High Energy Synchrotron Source (CHESS), underwent an upgrade that recast the facility as primarily a low emittance X-ray source. The upgrade replaced one sixth of the Cornell Electron Storage Ring (CESR) with six double-bend achromats, featuring four novel CHESS Compact Undulator (CCU) insertion devices, and switched CESR to single particle beam operation. At the time of this writing, the upgraded storage ring has achieved the CHESS-U design goal of operating with 200 mA of positron current at 6.0 GeV beam energy. Additionally, seven out of eleven CHESS-U beamlines are currently in X-ray user operation. The construction and the commissioning of the new section of the CESR accelerator required novel solutions to design, fabrication, and vacuum system operations. Significant design considerations and efforts were made to minimize X-ray ‘dark-time’, returning to operation less than 1 year. This paper describes the important milestones of the process, the solutions implemented, and the present status of CHESS-U.

43 PARTICLE ACCELERATORS↗