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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 955 records · Page 53
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

The establishment of a production-ready manufacturing process utilizing thin silicon substrates for solar cells

Three inch diameter Czochralski silicon substrates sliced directly to 5 mil, 8 mil, and 27 mil thicknesses with wire saw techniques were procured. Processing sequences incorporating either diffusion or ion implantation technologies were employed to produce n+p or n+pp+ solar cell structures. These cells were evaluated for performance, ease of fabrication, and cost effectiveness. It was determined that the use of 7 mil or even 4 mil wafers would provide near term cost reductions for solar cell manufacturers.

Pryor, R. A.↗
NASA NTRS1981

Prototype Ge:Ga detectors for the NASA-Ames cooled grating spectrometer

The detectors were fabricated from a Ge:Ga wafer from Eagle-Pitcher with a room temperature resistivity of approx. 12ohms cm. The wafer is approximately 2 inches in diameter and 0.061 inches thick. The contact material was ion implanted with Boron using 10 to the 14th power ions/sq cm at 25 Kev and 2 x10 to the 14th power ions/sq cm at 50 Kev. The crystal was then sputter-cleaned and metallized first with sputtered Ti and then sputter Au. In addition to the usual infrared measurements of responsivity and noise, measurements were made of the detectors' response to ionizing radiation.

Houck, J. R.↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS1980

Empirical study of the interaction of silicon substrate thinness, device design, and solar cell processing

Processing experiments using wire-saw techniques to slice thin silicon wafers are described. Substrates were sliced directly to 17 mil, 8 mil, and 5 mil thicknesses. Some of the 8 mil substrates and all of the 5 mil substrates were chemically etched to 7 and 4 mils, respectively, to guarantee removal of any saw damage. The wafers wire sawed to 17 mil thicknesses were processed as reference cells. A baseline process which results in an n(+)-p cell structure, and two advanced processes which provide n(+)-p-p(+) structures were utilized. By using a p(+) enhancement layer on the solar cell back surface, the performance of the 7 mil wafers was increased to exceed that of the 17 mil solar cells with simple n(+)-p structures. Cells fabricated by an ion implantation sequence utilizing elemental boron and phosphorus implants were shown to be capable of equalling or exceeding the performance of cells fabricated by an equivalent all-diffusion process.

Pryor, R. A.↗
NASA NTRS1980

Nature of the fossil evidence - Moon and meteorites

The nature of the fossil evidence to be found in extraterrestrial materials concerning the history of solar activity is reviewed. The various types of lunar rocks and meteorites containing evidence of exposure to solar radiations are distinguished, including igneous rocks, breccias, glassy agglutinates, single mineral crystals, carbonaceous meteorites, and the Antarctic meteorites, some of which fell to earth as much as a million years ago. The characteristic effects of energetic particles from space in materials are then examined, including ion implantation and surface radiation damage to a depth of several hundred A by the solar wind, radioactivity, electron trapping and track production induced by solar flares to depths from millimeters to centimeters, and spallation due to galactic cosmic rays at depths from centimeters to meters. Complications in the interpretation of radiation exposure histories represented by dynamic surface processes, the nonsolar origin of some trapped elements, and difficulties in determining the duration and epoch of surface exposure of individual crystals are also noted.

Walker, R. M.↗
NASA NTRS1981

Development and fabrication of a solar cell junction processing system

Modifications to the ground plane, to insure a good electrical return path during the pulse discharge, were made using a ring of beryllium copper finger stock attached to the underside of the aluminum ground plate. Experiments on annealing of wafers with ion implantation damage continued. The entire surface of 100 mm diameter wafers were annealed by one pulse for the standard implant (10 keV, phosphorus, 2x10 to the 15th power ions/sq cm). While samples are being fabricated into solar cells for electrical characterization, work is continuing on improvement of the electron beam uniformity and the optimization of the diode parameters. The engineering design was completed and the manufacturing detail drawings were released for fabrication. Assembly of the subcomponents for the exit and entrance locks is almost complete. These components include the cassettes, the indexing mechanisms, main doors, and wafer carrier transfer modules. The 'Y' track and three phase transition track sections are under final assembly and test.

Giesling, R.↗
NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗
NASA NTRS1981

Development and fabrication of a solar cell junction processing system

A solar cell junction processing system was developed and fabricated. A pulsed electron beam for the four inch wafers is being assembled and tested, wafers were successfully pulsed, and solar cells fabricated. Assembly of the transport locks is completed. The transport was operated successfully but not with sufficient reproducibility. An experiment test facility to examine potential scaleup problems associated with the proposed ion implanter design was constructed and operated. Cells were implanted and found to have efficiency identical to the normal Spire implant process.

Bunker, S.↗
NASA NTRS1982

Large area low-cost space solar cell development

A development program to produce large-area (5.9 x 5.9 cm) space quality silicon solar cells with a cost goal of 30 $/watt is descibed. Five cell types under investigation include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm-cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover-glass simultaneously is being developed. A description of cell developments by Applied Solar Energy Corp., Spectrolab and Spire is included. Results are given for cell and array tests, performed by Lockheed, TRW and NASA. Future large solar arrays that might use cells of this type are discussed.

Baraona, C. R.↗
NASA NTRS1981

Undoped semi-insulating LEC GaAs - A model and a mechanism

Undoped semi-insulating GaAs grown by the high-pressure liquid encapsulated Czochralski (LEC) method has been produced for use in direct ion implantation in several laboratories. A clear understanding of the factors controlling impurity transport and compensation in these materials has been lacking to date. In this work, detailed characterization has been performed on undoped semi-insulating crystals grown from both SiO2 and PBN crucibles followed by a proposed impurity model and compensation mechanism.

Oliver, J. R.↗
NASA NTRS1981

Hollow cathode startup using a microplasma discharge

Attention is given to a microplasma discharge to initiate a hollow cathode discharge for such applications as plasma flow experiments, the electric propulsion of space vehicles, and as a replacement for filament cathodes in neutral beam injector ion sources. The technique results in a cathode that is easy to start, simple in design, and which does not require external RF exciters, inserts or heating elements. Future applications may include ion beam milling and ion implantation.

Aston, G.↗
NASA NTRS1981

Diagnostic study of BSF silicon solar cells

Solar cells equipped with back surface fields (BSF) were fabricated by means of an aluminum alloy, boron diffusion, and boron ion implantation. The importance of initial thickness, resistivity, orientation, and the crystal growth method were examined. Aluminum in paste form was screen printed on the cell, followed by alloy formation at 800 C for a minute. Application of the BSFs resulted in open circuit voltage improvements dependent on the substrate resistivity, ranging from 10 mV at 0.3 ohm-cm to 50 mV at 15 ohm-cm. The gains in performance were attributed to a longer penetration depth, a heightened concentration profile at the interface, and higher concentrations in the p+ layer.

Yoo, H.↗
NASA NTRS1981

Laser processing of silicon solar cells

Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.

Katzeff, J. S.↗
NASA NTRS1981

An automated process sequence using preformed cell contacts and interconnects with a total cost of $0.64 per peak watt in 1986

A process sequence is described which utilizes a preformed metal mesh electrostatically bonded to each cell to provide the front contact. Cells of 12 percent AM1 efficiency have been produced using this scheme. This method also permits access to both contacts on the cell from the back side. In addition, low cost cell interconnection is accomplished using a flexible 'printed circuit' sheet which is ultrasonically bonded to the cell contacts. The complete process sequence as well as automated equipment which also uses ion implantation and pulse annealing is described. The total cost for module fabrication is estimated at $0.64 per peak watt for a 30 MW/year plant.

Armini, A. J.↗
NASA NTRS1981

Design, fabrication and performance of high efficiency photovoltaic modules

Design details and performance and environmental test results of newly developed high performance and reliability photovoltaic modules are presented. Efficiencies averaging 14.3% for 3040 cells were obtained by using ion implantation for cell junction and back surface field formation. 152 rectangular (6.0 cm x 4.6 cm) cells arranged with a 97% local packing density comprise the circuit assembly, and cells are wired 4 in parallel by 38 in series. The top cover of the superstrate design module is composed of tempered low-iron glass to provide transparent protection for the optical surface. Results show that this design has an encapsulation system which does not fail in the event of reverse-bias operation, and an average module efficiency of 12.2% was achieved at a 58.6W power which varied only 2% among all 20 modules.

Nowlan, M. J.↗
NASA NTRS1982

Bolometer and photosensitive detector systems for IR

In order to achieve the full sensitivity required for future space astronomy applications, IR detector systems will have to be cooled to 0.1 K or less. The feasibility of such cryocooling has been demonstrated for the established laboratory technique of adiabatic demagnetization, and it has been shown that bolometers made from compensated silicon, with ion-implanted contacts, come close to calculated ultimate performance limits. Unlike bolometers, silicon and germanium photoconductors are highly wavelength-dependent. Useful wavelengths are presented for the most promising photodetectors based on these materials. It is noted that, as the relevant microelectronic technology advances, array detectors in the near-IR may be expected to approach the size and performance of large, intrinsic silicon CCD arrays now available for optical wavelengths.

Low, F. J.↗
NASA NTRS1984

Improved Hollow Cathode

Improved hollow cathode for neutral-beam injector ion sources rapidly started by dielectric breakdown of ignitor plug located at one end of open ended tube. Used in low-current ion implantation, milling, sputtering, and bombardment for surface treatment.

Aston, G.↗
NASA NTRS1982

Large area low-cost space solar cell development

A development program to produce 5.9 x 5.9 cm space quality silicon solar cells with a cost goal of 30 $/W is described. Cell types investigated include wraparound dielectric, mechanical wraparound and conventional contact configurations with combinations of 2 or 10 ohm/cm resistivity, back surface reflectors and/or fields, and diffused or ion implanted junctions. A single step process to cut cell and cover glass simultaneously is being developed. Results for cell and array tests are given. Large solar arrays that might use cells of this type are discussed.

Barona, C. R.↗