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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Diffusion of Si in thin CoSi2 layers

Evidence of silicon diffusion in 100-A CoSi2 layers grown by room-temperature codeposition and annealing on Si(111) substrates was from Auger peak height ratios, which were interpreted in terms of a Si overlayer. It was found that this layer could be removed by chemical etching and reformed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the CoL23 VV Auger peak, the effective thickness of the Si overlayer was measured as a function of annealing temperature, by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. Similar results were found for samples grown both with and without the addition of a 10-A Si cap to prevent pinhole formation in the CoSi2; moreover, Si diffusion was also observed at temperatures well below the point where pinhole formation is first found, suggesting that Si diffusion does not depend on the presence of observable pinholes.

Schowengerdt, F. D.↗
NASA NTRS1990

Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation, and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

Grabow, B. E.↗
NASA NTRS1990

Electrical characterization of chemically modified YBa2Cu3O(7-x) surfaces

Results on electrical characterization of YBa2Cu3O(7-x) thin-film surfaces treated with a Br/ethanol chemical etch are presented. Electrical measurements of YBa2Cu3O(7-x)/Au/Nb device structures fabricated using polycrystalline, post-annelaed YBa2Cu3O(7-x) films with Br-etched surfaces, show improvements of approximately one or two orders of magnitude in current densities and resistivities (resistance-area products) relative to unetched devices. The existence of supercurrents in these structures has been confirmed by observation of the ac Josephson effect, and by magnetic field and temperature studies of the critical currents. The Br-etch process has produced 10 x 10 sq micron devices with critical current densities greater than 400 A/sq cm and resistivities as low as 4 x 10 to the -7th ohm/sq cm.

Hunt, B. D.↗
NASA NTRS1990

Cosmogenic neon from individual grains of CM meteorites - Extremely long pre-compaction exposure histories or an enhanced early particle flux

This paper presents the results on cosmogenic Ne extracted from individual meteoritic grains by a laser extraction system which used, at different times, two CW lasers: an Ar-ion laser and an Nd:YAG laser, with 20 and 70 W of deliverable power, respectively. Chemical etching was used to select grains exposed to solar flare VH particles. Results show that most of the grains with solar flare VH tracks (but not those which did not exhibit such tracks) contain spallation-produed Ne in significant excess of that due to the nominal cosmic-ray exposure, providing evidence for extensive energetic particle exposure during the precompaction era.

Hohenberg, Charles M.↗
NASA NTRS1990

Revealing the microstructure of materials

The objectives are to demonstrate how the microstructure of materials may be revealed by abrasive polishing and chemical etching, and to illustrate how microstructural information is used to monitor manufacturing processes, provide in-depth inspection, and perform failure analysis. Microstructural analysis is the procedure used to reveal the internal microstructural details of a material or part by sectioning and polishing the cut surface so that it may be examined under a suitable microscope. A printed wiring board was selected as the test material because it contains both metals and nonmetals that have distinctive microstructures, and because this technique is used throughout the electronic industry as a key quality control tool. The three principle component materials in printed circuit boards are glass/epoxy laminates faced with copper foil; copper, deposited by both electroless and electrolytic plating; and tin/lead solder. Sample preparation, mounting, grinding, polishing, and examination and analysis are discussed.

Nelson, James A.↗
NASA NTRS1991

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Thomas, Walter B., III↗
NASA NTRS1991

Process for the manufacture of seamless metal-clad fiber-reinforced organic matrix composite structures

A process for producing seamless metal-clad composite structures includes providing a hollow, metallic inner member and an outer sleeve to surround the inner member and define an inner space therebetween. A plurality of continuous reinforcing fibers is attached to the distal end of the outside diameter of the inner member, and the inner member is then introduced, distal end first, into one end of the outer sleeve. The inner member is then moved, distal end first, into the outer sleeve until the inner member is completely enveloped by the outer sleeve. A liquid matrix material is then injected into the space containing the reinforcing fibers between the inner member and the outer sleeve. Next a pressurized heat transfer medium is passed through the inner member to cure the liquid matrix material. Finally, the wall thickness of both the inner member and the outer sleeve are reduced to desired dimensions by chemical etching, which adjusts the thermal expansion coefficient of the metal-clad composite structure to a desired value.

Bluck, Raymond M.↗
NASA NTRS1991

Matrix plasticity in SiC/Ti-15-3 composite

An experimental method is described which allows for the observation of slip bands due to matrix plasticity in the SiC/Ti-15-3 composite system. A post-test heat treatment and subsequent chemical etch is employed to reveal slip bands in the titanium matrix. Composite specimens of various laminates were examined after tensile testing at room temperature. This method definitively shows that matrix plasticity has occurred in all the laminates investigated and at load/strain levels which were insufficient to cause fiber breakage.

Lerch, Bradley A.↗
NASA NTRS1991

Optical and microwave detection using Bi-Sr-Ca-Cu-O thin films

Recent progress at the Johns Hopkins University Applied Physics Laboratory (JHU/APL) in the development of optical and microwave detectors using high temperature superconducting thin films is described. Several objectives of this work have been accomplished, including: deposition of Bi-Sr-Ca-Cu-O thin films by laser abation processing (LAP); development of thin film patterning techniques, including in situ masking, wet chemical etching, and laser patterning; measurements of bolometric and non-bolometric signatures in patterned Bi-Sr-Ca-Cu-O films using optical and microwave sources, respectively; analysis and design of an optimized bolometer through computer simulation; and investigation of its use in a Fourier transform spectrometer. The focus here is primarily on results from the measurement of the bolometric and non-bolometric response.

Grabow, B. E.↗
NASA NTRS1991

Chemical nature of the barrier in Pb/YBa2Cu3O(7-x) tunneling structures

Several reports of reproducible tunneling measurements on YBa2Cu3O(7-x) thin films or single crystals with a Pb counterelectrode have recently appeared. The nature of the tunnel barrier, formed by air exposure, in these structures has been unknown. In the present work, the chemical nature of the tunnel barrier is studied with X-ray photoelectron spectroscopy (XPS). Laser-ablated films grown on LaAlO3 which have been chemically etched and heated in air are found to form nonsuperconducting surface Ba species, evident in an increase of the high binding energy Ba 3d and O 1s signals. A deposited Pb film about 10 A thick is found to be oxidized, and Cu(+2) is partially reduced to Cu(+1). The tunneling barrier thus appears to consist of species resulting from a combination of the air exposure and a reaction between the superconductor and the deposited Pb counterelectrode.

Vasquez, R. P.↗
NASA NTRS1993

Amorphous-Carbon Films

Report describes structure, preparation, characterization, and applications of films of amorphous-carbon. Amorphous-carbon films potentially useful as masks in x-ray lithography, layers for passivation of high-speed microelectronic circuits, hard films to protect magnetic recording media and optical components from degradation by chemical etching or wear, and radiation detectors.

Pouch, John J.↗
NASA NTRS1994

A monolithic Si bolometer array for the Caltech Submillimeter Observatory

We are developing a submillimeter continuum camera for the Caltech Submillimeter Observatory (CSO) located on Mauna Kea. The camera will employ a monolithic Si bolometer array which was developed by Moseley et al. at the NASA Goddard Space Flight Center (GSFC). The camera will be cooled to a temperature of about 300 mK in a He-3 cryostat, and will operate primarily at wavelengths of 350 and 450 micrometers. We plan to use a bolometer array with 1x24 directly illuminated pixels, each pixel of dimension 1x2 sq mm, which is about half of the F/4 beam size at these wavelengths. Each pixel is 10 to 12 micrometers thick and is supported only by four thin Si legs formed by wet chemical etch. The pixels are doped n-type by phosphorus implantation, compensated by boron implantation. Signals from the bolometer pixels are first amplified by cryogenically cooled FET's. The signals are further amplified by room-temperature amplifiers and then separately digitized by 16 bit A/D converters with differential inputs. The outputs of the A/D converters are fed into a digital signal processing board via fiber-optic cables. The electronics and data acquisition system were designed by the Goddard group. We will report the status of this effort.

Wang, Ning↗
NASA NTRS1994

Helium and neon in lunar ilmenites of different antiquities

Helium and neon were extracted from individual lunar ilmenite grains, approximately 100 micrometers in diameter, using a pulsed step-heating technique. Grains from lunar samples 71501 and 79035, believed to have been exposed to solar corpuscular radiation at greatly different times, were studied. The results found were consistent with the hypothesis that in addition to solar-wind-implanted gas, a second more deeply implanted component was present in both species of grains. Average isotopic ratios were determined giving equal weight to each of the particles. As found in depth studies employing chemical etching, both the He-3/He-4 and Ne-20/Ne-22 ratios were lower in the more deeply implanted gas than in the solar wind component. The He-3/He-4 ratio in the solar wind component of the more ancient grains was lower than that in the more recently exposed ones, whereas no difference was found for the more deeply embedded He. In the deeply embedded component of the ancient grains, the He-4/Ne-20 ratio was approx. 2x that found in the more recently exposed grains. In the shallowly implanted component, the ratio varied greatly from grain to grain, preventing comparison with the solar wind elemental composition.

Nier, A. O.↗
NASA NTRS1994

Solar wind noble gases and nitrogen in metal from lunar soil 68501

Noble gases and N were analyzed in handpicked metal separates from lunar soil 68501 by a combination of step-wise combustions and pyrolyses. Helium and Ne were found to be unfractionated with respect to one another when normalized to solar abundances, for both the bulk sample and for all but the highest temperature steps. However, they are depleted relative to Ar, Kr and Xe by at least a factor of 5. The heavier gases exhibit mass-dependent fractionation relative to solar system abundance ratios but appear unfractionated, both in the bulk metal and in early temperature steps, when compared to relative abundances derived from lunar ilmenite 71501 by chemical etching, recently put forward as representing the abundance ratios in solar wind. Estimates of the contribution of solar energetic particles (SEP) to the originally implanted solar gases, derived from a basic interpretation of He and Ne isotopes, yield values of about 10%. Analysis of the Ar isotopes requires a minimum of 20% SEP, and Kr isotopes, using our preferred composition for solar wind Kr, yield a result that overlaps both these values. It is possible to reconcile the data from these gases if significant loss of solar wind Ar, Kr and presumably Xe has occurred relative to the SEP component, most likely by erosive processes that are mass independent, although mass-dependent losses (Ar greater than Kr greater than Xe) cannot be excluded. If such losses did occur, the SEP contribution to the solar implanted gases must have been no more than a few percent. Nitrogen is a mixture of indigenous meteoritic N, whose isotopic composition is inferred to be relatively light, and implanted solar N, which has probably undergone diffusive redistribution and fractionation. If the heavy noble gases have not undergone diffusive loss, then N/Ar in the solar wind can be inferred to be at least several times the accepted solar ratio. The solar wind N appears, even after correction for fractionation effects, to have a minimum delta N-15 value equal to or greater than +150% and a more probable value equal to or greater than +200%.

Becker, Richard H.↗
NASA NTRS1991

In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

Yao, Huade↗
NASA NTRS1995

Reshaping Light-Emitting Diodes To Increase External Efficiency

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Rogowski, Robert↗
NASA NTRS1995

Integrated Microreactor for Chemical and Biochemical Applications

A completely integrated microreactor was developed that allows for the processing of very small amounts of chemical solutions. The entire system comprises several pumps and valves arranged in different branches as well as a mixing unit and a reaction chamber. The streaming path of each branch contains two valves and one pump each. The pumps are driven by piezoelectric elements mounted on thin glass membranes. Each pump is about 3.5 mm x 3.5 mm x 0.7 mm. A pumping rate up to 25 microliters per hour can be achieved. The operational voltage ranges between 40 and 200 V. A volume stroke up to 1.5 millimeter is achievable from the membrane structures. The valves are designed as passive valves. Sealing is by thin metal films. The dimension of a valve unit is 0.8 x 0.8. 07 mm. The ends of the separate streaming branches are arranged to meet in one point. This point acts as the beginning of a mixer unit which contains several fork-shaped channels. The arrangement of these channels allows for the division of the whole liquid stream into partial streams and their reuniting. A homogeneous mixing of solutions and/or gases can be observed after having passed about 10 of the fork elements. A reaction chamber is arranged behind the mixing unit to support the chemical reaction of special fluids. This unit contains heating elements placed outside of the chamber. The complete system is arranged in a modular structure and is built up of silicon. It comprises three silicon wafers bonded together by applying the silicon direct bonding technology. The silicon structures are made only by wet chemical etching processes. The fluid connections to the outside are realized using standard injection needles glued into v-shaped structures on the silicon wafers. It is possible to integrate other components, like sensors or electronic circuits using silicon as the basic material.

Schwesinger, N.↗
NASA NTRS1997

Seeded Physical Vapor Transport of Cadmium-Zinc Telluride Crystals: Growth and Characterization

Crystals of Cd(1-x)Zn(x)Te with x = 0.2 and 40 g in weight were grown on monocrystalline cadmium-zinc telluride seeds by closed-ampoule physical vapor transport with or without excess (Cd + Zn) in the vapor phase. Two post-growth cool-down rates were used. The crystals were characterized using low temperature photoluminescence, atomic force microscopy, chemical etching, X-ray diffraction and electrical measurements. No formation of a second, ZnTe-rich phase was observed.

Palosz, W.↗