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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Melting behavior and phase relations of lunar samples

An attempt was made to show that feldspar would float during melting. Large anorthite crystals were placed beneath a silicate glass representative of liquid in which plagioclase accumulation is thought to have occurred. In less than 3 hours at 1,300 C, the crystals rose to the top in a Pt crucible 3 cm deep equilibrated in air and in a Mo crucible 1.5 cm deep equilibrated in an H2/CO2 gas stream of log PO2 = -10.9 (below Fe/FeO). These results suggest that lunar crustal formation by feldspar flotation is possible without special recourse to differential sinking of plagioclase versus mafic minerals or selective elutriation of plagioclase.

Hays, J. F.↗
NASA NTRS1977

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Duncan, C. S.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗
NASA NTRS1978

LSSA large area silicon sheet task continuous Czochralski process development

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Rea, S. N.↗
NASA NTRS1978

Analysis and evaluation of process and equipment in tasks 2 and 4 of the Low Cost Solar Array project

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.

Goldman, H.↗
NASA NTRS1982

Gravity-Feed Growth of Silicon Ribbon

In inverted Stepanov apparatus, silicon is melted in vee-shaped crucible that has long narrow slot at bottom of vee. Molten silicon flows from slot at a rate controlled by fluid pressure. As it emerges, it cools and solidifies to form a continuous ribbon. To eliminate surface-tension effects, crucible walls are made of a material that liquid silicon does not wet.

Cullen, G. W.↗
NASA NTRS1981

Containerless undercooling and solidification in drop tubes

A containerless low-gravity environment, produced within a 32 m drop tube apparatus, has been used to undercool and solidify metals, alloys or glasses by eliminating crucible induced nucleation processes. Niobium droplets with diameters in the range of 2 to 5 mm have been undercooled by 525 K which corresponds to the maximum undercooling reported by Turnbull and others on fine dispersions of low melting point metals. Solidification at large undercooling resulted in single crystalline spheres with the formation of interdendritic shrinkage channels on the sample surface rather than interior shrinkage cavities. The grain refinement as observed for Ni samples undercooled and solidified in fused silica crucibles does not occur in free-falling drops of Nb. A calculated solidification speed of undercooled Nb is compared to Ni. A solidification speed of 320 m/s is found for the Nb drops. This solidification speed is greater than or comparable to the solidification speeds calculated in splat cooled samples. Thus, a drop tube apparatus can be useful in the preparation and study of high temperature metastable compounds or alloys in bulk form.

Lacy, L. L.↗
NASA NTRS1983

Pellet Feed for Dendritic-Web Growth

Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.

Duncan, C. S.↗
NASA NTRS1983

Modified Silicon Furnace Lowers Crystal Cost

Modified Czochralski setup grows several large crystals in succession from one crucible. Modified apparatus is expected to reduce cost per crystal by about 50 percent. Key features are: isolation valve between growth and pulling chamber, and recharging mechanism. Functional changes reduce cycle time and prolong crucible life.

Lane, R. L.↗
NASA NTRS1983

Controlling Thermal Gradients During Silicon Web Growth

Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.

Duncan, C. S.↗
NASA NTRS1984

Growing Single Crystals From Low-Purity Silicon

Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.

Schmid, F.↗
NASA NTRS1982

Exothermic furnace module development

An exothermic furnace module was developed to rapidly heat and cool a 0.820-in. (2.1 cm) diameter by 2.75-in. (7.0 cm) long TZM molybdenum alloy crucible. The crucible contains copper, oxygen, and carbon for processing in a low-g environment. Peak temperatures of 1270 C were obtainable 3.5 min after start of ignition, and cooling below 950 C some 4.5 min later. These time-temperature relationships were conditioned for a foam-copper experiment, Space Processing Applications Rocket experiment 77-9, in a sounding rocket having a low-g period of 5 min.

Darnell, R. R.↗
NASA NTRS1982

Advanced Czohcralski ingot growth

A summary of advanced Cz ingot-growth activities is presented. Five ingots (totalling 150 kg) were grown from one crucible by use of chunk silicon replenishment between ingot pulls. The cost of the ingot growth was reduced from $80/kg (conventional Cz growth) to $20/kg. Further improvements can be made by achieving a better understanding of crystalline silicon growth and the influence on growth of contaminants from the atmosphere and/or the crucible. This should lead to a higher percentage of monocrystalline growth and possible increased growth rates.

Lane, R. L.↗
NASA NTRS1982

Silicon crystal growth in vacuum

The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Khattak, C. P.↗
NASA NTRS1983

Ionized cluster beam deposition

Ionized Cluster Beam (ICB) deposition, a new technique originated by Takagi of Kyoto University in Japan, offers a number of unique capabilities for thin film metallization as well as for deposition of active semiconductor materials. ICB allows average energy per deposited atom to be controlled and involves impact kinetics which result in high diffusion energies of atoms on the growth surface. To a greater degree than in other techniques, ICB involves quantitative process parameters which can be utilized to strongly control the characteristics of films being deposited. In the ICB deposition process, material to be deposited is vaporized into a vacuum chamber from a confinement crucible at high temperature. Crucible nozzle configuration and operating temperature are such that emerging vapor undergoes supercondensation following adiabatic expansion through the nozzle.

Kirkpatrick, A. R.↗
NASA NTRS1984

Effects of Non-equilibrium Solidification on the Material Properties of Brick Silicon for Photovoltaics

Silicon ingot growth technologies like the Ubiquitous Crystallization Process (UCP) are solidified within a shaping crucible. The rate at which heat can be lost from this crucible minus the rate at which heat is input from an external source determines the rate at which crystallization will occur. Occasionally, when the process parameters for solidification are exceeded, the normally large multi-centimeter grain size material assocated with the UCP will break down into regions containing extremely small, millimeter or less, grain size material. Accompanying this breakdown in grain growth is the development of so called sinuous grain boundaries. The breakdown in grain growth which results in this type of small grain structure with sinuous boundaries is usually associated with the rapid crystallization that would accompany a system failure. This suggests that there are limits to the growth velocity that one can obtain and still expect to produce material that would possess good photovoltaic properties. It is the purpose to determine the causes behind the breakdown of this material and what parameters will determine the best rates of solidification.

Regnault, W. F.↗
NASA NTRS1984

Recent advances in LPE GaAs-based solar cells

Several modifications were made to an infinite solution liquid phase epitaxy system that help fabricate both GaAs-based cells and thin cells that effectively reduce power-to-weight ratio for space applications. The most important development is the multiwell crucible for multilayer growth. Using a split crucible in one system, as many as five layers were grown in succession with varying Al levels and dopants. The structures grown were used to produce thin GaAs cells only 10 to 20 microns thick and also to grow cascade cell components. Results of these studies are presented and their applications to the future development of GaAs-based cells are discussed.

Kamath, G. S.↗
NASA NTRS1984

Rapid solidification via melt spinning - Equipment and techniques

One of the simpler methods available to accomplish rapid solidification processing is free jet melt spinning. With only a modest expenditure of time, effort, and capital, an apparatus suitable for preliminary experimentation can be assembled. Wheel and crucible materials, process atmospheres, crucible design, heating methods, and process parameters and their relationship to melt composition are described. Practical solutions to processing problems, based on 'hands-on' experience, are offered. Alloys with melting points up to 3000 F have been rapidly solidified using the techniques described.

Jech, R. W.↗