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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Orbital performance of communication satellite microwave power amplifiers (MPAs)

This paper presents background data on the performance of microwave power amplifiers (MPAs) used as transmitters in currently operating commercial communication satellites. Specifically aspects of two competing MPA types are discussed. These are well known TWTA (travelling wave tube amplifier) and the SSPA (solid state power amplifier). Extensive in-orbit data has been collected from over 2000 MPAs in 1991 and 1993. The study in 1991 invovlved 75 S/C (spacecraft) covering 463 S/C years. The 1993 'second-look' study encompassed a slightly different population of 72 S/C with 497 S/C years of operation. A surprising result of both studies was that SSPAs, although quite reliable, did not achieve the reliability of TWTAs were one-third more reliable in the 1993 study. This was at C-band with comparable power amplifiers, e.g. 6-16W of RF output power and similar gains. Data at K(sub u)-band is for TWTAs only since there are no SSPAs in the current S/C inventory. The other complementary result was that the projected failure rates used as S/C payload design guidelines were, on average, somewhat higher for TWTAs than the actual failure rates uncovered by this study. SSPA rates were as projected.

Strauss, R.↗
NASA NTRS1997

Ka-Band GaAs FET Monolithic Power Amplifier Development

Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

Saunier, Paul↗
NASA NTRS1999

Optical Amplifier for Space Applications

We describe an optical amplifier designed to amplify a spatially sampled component of an optical wavefront to kilowatt average power. The goal is means for implementing a strategy of spatially segmenting a large aperture wavefront, amplifying the individual segments, maintaining the phase coherence of the segments by active means, and imaging the resultant amplified coherent field. Applications of interest are the transmission of space solar power over multi-megameter distances, as to distant spacecraft, or to remote sites with no preexisting power grid.

Fork, Richard L.↗
NASA NTRS2003

Magnetic Bearing Amplifier Output Power Filters for Flywheel Systems

Five power filters and two types of power amplifiers were tested for use with active magnetic bearings for flywheel applications. Filter topologies included low pass filters and low pass filters combined with trap filters at the PWM switching frequency. Two state and three state PWM amplifiers were compared. Each system was evaluated based on current magnitude at the switching frequency, voltage magnitude at 500 kHz, and power consumption. The base line system was a two state amplifier without a power filter. The recommended system is a three state power amplifier with a 50 kHz low pass filter and a 27 kHz trap filter. This system uses 5.57 W. It reduces the switching current by an order of magnitude and the 500 kHz voltage by two orders of magnitude. The relative power consumption varied depending on the test condition between 60 to 130 percent of the baseline.

Lebron-Velilla, Ramon C.↗
NASA NTRS2002

Digital Distortion Caused by Traveling- Wave-Tube Amplifiers Simulated

Future NASA missions demand increased data rates in satellite communications for near real-time transmission of large volumes of remote data. Increased data rates necessitate higher order digital modulation schemes and larger system bandwidth, which place stricter requirements on the allowable distortion caused by the high-power amplifier, or the traveling-wave-tube amplifier (TWTA). In particular, intersymbol interference caused by the TWTA becomes a major consideration for accurate data detection at the receiver. Experimentally investigating the effects of the physical TWTA on intersymbol interference would be prohibitively expensive, as it would require manufacturing numerous amplifiers in addition to acquiring the required digital hardware. Thus, an accurate computational model is essential to predict the effects of the TWTA on system-level performance when a communication system is being designed with adequate digital integrity for high data rates. A fully three-dimensional, time-dependent, TWT interaction model has been developed using the electromagnetic particle-in-cell code MAFIA (Solution of Maxwell's equations by the Finite-Integration-Algorithm). It comprehensively takes into account the effects of frequency-dependent AM (amplitude modulation)/AM and AM/PM (phase modulation) conversion, gain and phase ripple due to reflections, drive-induced oscillations, harmonic generation, intermodulation products, and backward waves. This physics-based TWT model can be used to give a direct description of the effects of the nonlinear TWT on the operational signal as a function of the physical device. Users can define arbitrary excitation functions so that higher order modulated digital signals can be used as input and that computations can directly correlate intersymbol interference with TWT parameters. Standard practice involves using communication-system-level software packages, such as SPW, to predict if adequate signal detection will be achieved. These models use a nonlinear, black-box model to represent the TWTA. The models vary in complexity, but most make several assumptions regarding the operation of the high-power amplifier. When the MAFIA TWT interaction model was used, these assumptions were found to be in significant error. In addition, digital signal performance, including intersymbol interference, was compared using direct data input into the MAFIA model and using the system-level analysis tool SPW for several higher order modulation schemes. Results show significant differences in predicted degradation between SPW and MAFIA simulations, demonstrating the significance of the TWTA approximations made in the SPW model on digital signal performance. For example, a comparison of the SPW and MAFIA output constellation diagrams for a 16-ary quadrature amplitude modulation (16-QAM) signal (data shown only for second and fourth quadrants) is shown. The upper-bound degradation was calculated from the corresponding eye diagrams. In comparison to SPW simulations, the MAFIA data resulted in a 3.6-dB larger degradation.

Kory, Carol L.↗
NASA NTRS2005

Fiber lasers and amplifiers for science and exploration at NASA Goddard Space Flight Center

We discuss present and near-term uses for high-power fiber lasers and amplifiers for NASA- specific applications including planetary topography and atmospheric spectroscopy. Fiber lasers and amplifiers offer numerous advantages for both near-term and future deployment of instruments on exploration and science remote sensing orbiting satellites. Ground-based and airborne systems provide an evolutionary path to space and a means for calibration and verification of space-borne systems. We present experimental progress on both the fiber transmitters and instrument prototypes for ongoing development efforts. These near-infrared instruments are laser sounders and lidars for measuring atmospheric carbon dioxide, oxygen, water vapor and methane and a pseudo-noise (PN) code laser ranging system. The associated fiber transmitters include high-power erbium, ytterbium, neodymium and Raman fiber amplifiers. In addition, we will discuss near-term fiber laser and amplifier requirements and programs for NASA free space optical communications, planetary topography and atmospheric spectroscopy.

Krainak, Michael A.↗
NASA NTRS2004

Class E/F switching power amplifiers

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Hajimiri, Seyed-Ali↗
NASA NTRS2008

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗
NASA NTRS2009

Low-Noise MMIC Amplifiers for 120 to 180 GHz

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Pukala, David↗
NASA NTRS2007

Wide-Temperature-Range Integrated Operational Amplifier

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Mojarradi, Mohammad↗
NASA NTRS2006

Waveguide Power-Amplifier Module for 80 to 150 GHz

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Samoska, Lorene↗
NASA NTRS2010

Modeling a Common-Source Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a common-source amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the common-source amplifier is the most widely used amplifier in MOS technology, understanding and modeling the behavior of the FeFET-based common-source amplifier will help in the integration of FeFETs into many circuits.

Sayyah, Rana↗
NASA NTRS1964

Nylon Sleeve for Cavity Amplifier Holds Tuning Despite Heat

The problem: Detuning of cavity amplifiers with change in temperature. This results in deterioration of the performance of the amplifier at its design frequency. In cavity amplifiers and filters it is desirable that constant performance be maintained regardless of thermal changes. These changes often cause an "off resonance shift" in a cavity filter and a deterioration of performance in a cavity amplifier. The solution: Mount the tuning probe in a nylon sleeve. Thermal expansion and contraction of the nylon nullifies unwanted capacitive and inductive changes in the resonant elements.

Derr, Lloyd↗
NASA NTRS2012

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

cryogenically cooled superconductorinsulator- supe↗
NASA NTRS2014

Challenges and Techniques in Measurements of Noise, Cryogenic Noise and Power in Millimeter-Wave and Submillimeter-Wave Amplifiers

We will present the topic of noise measurements, including cryogenic noise measurements, of Monolithic Microwave Integrated Circuit (MMIC) and Sub-Millimeter-Wave Monolithic Microwave Integrated Circuit (S-MMIC) amplifiers, both on-wafer, and interfaced to waveguide modules via coupling probes. We will also present an overview of the state-of-the-art in waveguide probe techniques for packaging amplifier chips, and discuss methods to obtain the lowest loss packaging techniques available to date. Linearity in noise measurements will be discussed, and experimental methods for room temperature and cryogenic noise measurements will be presented. We will also present a discussion of power amplifier measurements for millimeter-wave and submillimeter-wave amplifiers, and the tools and hardware needed for this characterization.

Samoska, Lorene↗
NASA NTRS2016

Ka-Band Waveguide 2-Way Hybrid Combiner for MMIC Amplifiers with Unequal and Arbitrary Power Output Ratio

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

Simons, Rainee N↗
DOE OSTI2025

Compensating for Amplifier Non-Linearity in a SEL Controller

The Self-Excited Loop (SEL) architecture, used in some continuous-wave (CW) superconducting linacs, relies on a positive feedback mechanism that requires carefully defined operating limits to ensure stable operation. These limits are typically derived from amplifier calibration, which characterizes the relationship between forward power and DAC drive. However, amplifier non-linearity often prevents a simple linear fit of this characteristic, introducing errors that can compromise stability. To address this, we present a modified calibration procedure that incorporates amplifier non-linearity into the SEL framework. The approach is validated with test data from a 32 kW solid-state amplifier (SSA) and a cavity emulator developed for the Fermilab PIP-II linac.

Raman, S. [Fermilab] (ORCID:0009000735937206)↗