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NASA NTRS1985

CCD charge collection efficiency and the photon transfer technique

The charge-coupled device (CCD) has shown unprecendented performance as a photon detector in the areas of spectral response, charge transfer, and readout noise. Recent experience indicates, however, that the full potential for the CCD's charge collection efficiency (CCE) lies well beyond that which is realized in currently available devices. A definition of CCE performance is presented and a standard test tool (the photon transfer technique) for measuring and optimizing this important CCD parameter is introduced. CCE characteristics for different types of CCDs are compared; the primary limitations in achieving high CCE performance are discussed, and the prospects for future improvement are outlined.

Janesick, J.↗

NASA NTRS1987

Orbit determination accuracy assessment for an asteroid flyby - A Galileo case study

The Galileo spacecraft may be targeted for a close flyby of an asteroid on its way to an encounter with Jupiter. An orbit determination accuracy analysis was carried out for the case of the asteroid 29 Amphitrite based on the use of radio metric and optical data types. Prior to encounter, the uncertainty in the asteroid's position, based on astrometric observations from earth, amounts to several hundred kilometers. This ephemeris uncertainty constitutes the dominant error in the determination of the spacecraft orbit with respect to Amphitrite. It is shown that the spacecraft-asteroid relative position can be improved by imaging asteroid-star pairs with the Galileo charge-coupled device (CCD) camera, enabling an accurate flyby of the asteroid. The main benefit of optical navigation is to enable the instrument pointing updates necessary for closeup viewing of the asteroid. A discussion of the evolution of the target error ellipse parameters as a function of data coverage and various combinations of radiometric and optical data types is also presented.

Kechichian, Jean A.↗

NASA NTRS1987

Coronagraph for astronomical imaging and spectrophotometry

A coronagraph designed to minimize scattered light in astronomical observations caused by the structure of the primary mirror, secondary mirror, and secondary support structure of a Cassegrainian telescope is described. Direct (1:1) and reducing (2.7:1) imaging of astronomical fields are possible. High-quality images are produced. The coronagraph can be used with either a two-dimensional charge-coupled device or photographic film camera. The addition of transmission dispersing optics converts the coronagraph into a low-resolution spectrograph. The instrument is modular and portable for transport to different observatories.

Vilas, Faith↗

NASA NTRS1987

Qualification of S-glass/epoxy thermal isolator bands

Unidirectional fiberglass reinforced epoxy structures have been evaluated as thermal isolator tension straps for the charge-coupled devices on the Hubble Space Telescope's Wide Field/Planetary Camera. Mechanical and thermal properties are reported for filament-wound S-2 glass in a generic epoxy resin and compared to S-901 glass bands used on a previous camera. Measurements were performed on very small paper clip-shaped bands. Probably the smallest in length and have a load carrying mean cross sectional area of only 0.00024 square inches.

Bauer, Jerry↗

NASA NTRS1987

A geostationary imaging spectrometer TOMS instrument

One design for a geostationary Total Ozone Mapping Spectrometer (TOMS) with many desirable features is an imaging spectrometer. A preliminary study makes use of a 0.25 m Czerny-Turner spectrometer with which the Earth is imaged on a charge-coupled device (CCD) in dispersed light. The wavelength is determined by a movable grating which can be set arbitrarily by ground control. The signal integration time depends on wavelength but this system allows arbitrary timing by command. Special circumstances such as a requirement to track a low-lying sulfur dioxide cloud or a need to discriminate high level ozone from total ozone at midlatitudes could be obtained by adding a particular wavelength to the normally pre-programmed time sequence. The incident solar irradiance is measured by deploying a diffuser plate in the field of view. Individual detector elements correspond to scene elements in which the several wavelengths are serially sampled and the Earth radiance is compared to the incident sunlight. Thus the problem of uncorrelated drift of multiple detectors is removed.

Krueger, Arlin J.↗

NASA NTRS1989

Metal Film Increases CCD Quantum Efficiency

Thin layer of platinum or other high-work-function metal applied to back side of rear-illuminated charge-coupled device (CCD) achieves quantum efficiency (QE)-pinned state, an ideal condition allowing sensor to achieve 100-percent internal charge-collection efficiency within its photosensitive volume. Metal layer, called flash gate, easily applied by tungsten vacuum deposition during last step of sensor fabrication.

Janesick, James R.↗

NASA NTRS1989

Composite Semiconductor Substrates

Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.

Nouhi, Akbar↗

NASA NTRS1989

A programmable CCD driver circuit for multiphase CCD operation

A programmable CCD (charge-coupled device) driver circuit was designed to drive CCDs in multiphased modes. The purpose of the drive electronics is to operate developmental CCD imaging arrays for NASA's tiltable moderate resolution imaging spectrometer (MODIS-T). Five objectives for the driver were considered during its design: (1) the circuit drives CCD electrode voltages between 0 V and +30 V to produce reasonable potential wells, (2) the driving sequence is started with one input signal, (3) the driving sequence is started with one input signal, (4) the circuit allows programming of frame sequences required by arrays of any size, (5) it produces interfacing signals for the CCD and the DTF (detector test facility). Simulation of the driver verified its function with the master clock running up to 10 MHz. This suggests a maximum rate of 400,000 pixels/s. Timing and packaging parameters were verified. The design uses 54 TTL (transistor-transistor logic) chips. Two versions of hardware were fabricated: wirewrap and printed circuit board. Both were verified functionally with a logic analyzer.

Ewin, Audrey J.↗

NASA NTRS1982

Integrated optics in an electrically scanned imaging Fourier transform spectrometer

An efficient, lightweight and stable, Fourier transform spectrometer was developed. The mechanical slide mechanism needed to create a path difference was eliminated by the use of retro-reflecting mirrors in a monolithic interferometer assembly in which the mirrors are not at 90 degrees to the propagation vector of the radiation, but rather at a small angle. The resulting plane wave fronts create a double-sided inteferogram of the source irradiance distribution which is detected by a charge-coupled device image sensor array. The position of each CCD pixel in the array is an indication of the path difference between the two retro-reflecting mirrors in the monolithic optical structure. The Fourier transform of the signals generated by the image sensor provide the spectral irradiance distribution of the source. For imaging, the interferometer assembly scans the source of irradiation by moving the entire instrument, such as would occur if it was fixedly mounted to a moving platform, i.e., a spacecraft. During scanning, the entrace slot to the monolithic optical structure sends different pixels to corresponding interferograms detected by adjacent columns of pixels of the image sensor.

Breckinridge, James B.↗

NASA NTRS1976

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗

NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗

NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗

NASA NTRS1977

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗

NASA NTRS1981

Development of a Shuttle Infrared Telescope Facility /SIRTF/ fine guidance sensor

Fine guidance technology development for the Shuttle Infrared Telescope Facility (SIRTF) centers upon the use of a single multiple-star-tracking sensor to provide the position information necessary to produce three-axis attitude control signals for precision payload pointing. The effort described in this paper is concerned with the development of a fine guidance sensor that employs a high-density charge-coupled imaging device for producing position information signals by using star fields. Multiple star position information produces three-axis position error signals that are used to update inertial reference gyros. The sensor employs advanced position interpolation algorithms to enhance field-of-view resolution and to correct for optical aberrations inherent in spatially chopped star images resulting from the telescope's movable secondary mirror. Operation of the sensor is under the control of a high-performance microcomputer that provides both autonomy and flexibility in a guidance application.

Salomon, P. M.↗

NASA NTRS1988

Improved Charge-Coupled Imager For X Rays

Device proposed to improve imaging of x rays. Features thin layer of oxide in virtual phase to increase quantum efficiency and depletion layer nearly as thick as epitaxial silicon layer to increase resolution. Applications include imaging spectrometers for x-ray astronomy, investigations of plasmas, and x-ray crystallography.

Wadsworth, Mark↗

NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗

NASA NTRS1975

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗

NASA NTRS1975

A 190 by 244 charge-coupled area image sensor with interline transfer organization

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.

Walsh, L. R.↗