Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electrical Contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Multiband superconductivity in strongly hybridized 1 T ' - WTe 2 / NbSe 2 heterostructures

The interplay of topology and superconductivity has become a subject of intense research in condensed-matter physics for the pursuit of topologically nontrivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer $1T$' - $\mathrm{WTe_2}$ grown on NbSe 2 by van der Waals epitaxy. The superconducting local density of states, resolved in scanning tunneling spectroscopy down to 500 mK, reflects a hybrid electronic structure well described by a multiband framework based on the McMillan equations which captures the multiband superconductivity inherent to the NbSe 2 substrate and that is induced by proximity to $\mathrm{WTe_2}$ self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively and confirms that strong interlayer hopping gives rise to a semimetallic density of states in the two-dimensional $\mathrm{WTe_2}$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter Δ ≅ 0.6 meV induced in the $\mathrm{WTe_2}$ monolayer bulk, stable beyond a 2 T magnetic field. So we believe that our detailed multiband analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.

36 MATERIALS SCIENCE↗

Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape

In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.

42 ENGINEERING↗

Electrophoretic Deposition of Platinum Nanoparticles using Ethanol-Water Mixtures Significantly Reduces Neural Electrode Impedance

We report platinum electrodes are critical components in many biomedical devices, an important example being implantable neural stimulation or recording electrodes. However, upon implantation, scar tissue forms around the electrode surface, causing unwanted deterioration of the electrical contact. We demonstrate that sub-monolayer coatings of platinum nanoparticles (PtNPs) applied to 3D neural electrodes by electrophoretic deposition (EPD) can enhance the electrode's active surface area and significantly lower its impedance. In this work we use ethanol-water mixtures as the EPD solvent, in contrast to our previous studies carried out in water. We show that EPD coating in 30 vol.% ethanol improves the device's electrochemical performance. Computational mesoscale multiparticle simulations were for the first time applied to PtNP-on-Pt EPD, revealing correlations between ethanol concentration, electrochemical properties, and coating homogeneity. Thereto, this optimum ethanol concentration (30 vol.%) balances two opposing trends: (i) the addition of ethanol reduces water splitting and gas bubble formation, which benefits surface coverage, and (ii) increased viscosity and reduced permittivity occur at high ethanol concentrations, which impair the coating quality and favoring clustering. A seven-fold increase in active surface area and significantly reduced in vitro impedance of the nano-modified neural stimulation electrode surfaces highlight the influence of ethanol-water mixtures in PtNP EPD.

36 MATERIALS SCIENCE↗

Study of Cathode Gas Diffusion Architecture for Improved Oxygen Transport in Hydroxide Exchange Membrane Fuel Cells

The high pH environment in hydroxide exchange membrane fuel cells (HEMFCs) has the potential to reach lower costs than the current proton exchange membrane fuel cells (PEMFCs), the incumbent technology. A significant difference between HEMFCs and PEMFCs is the location of water production within the cell. In PEMFCs, the water is produced on the cathode, limiting oxygen transport. In HEMFCs, the water is produced on the anode where the fuel is pure hydrogen. This allows the cathode to be optimized for oxygen transport without the presence of excess liquid water. Limiting current analysis, a technique previously used in PEMFCs, is adopted in HEMFCs to evaluate the oxygen mass transport resistances for different sections of the cathode. Through elimination of the microporous layer (MPL), gas diffusion layer (GDL), and traditional flow field and using porous nickel foam for gas distribution, the transport resistance at an operating condition of 150 kPa(g) and with the cell temperature at 80 °C was decreased from 112 s m −1 to 48 s m −1 , effectively halved. The optimal configuration for performance was found with Ni foam and a GDL, eliminating the MPL and traditional flow field, which vastly improved oxygen transport while maintaining adequate electrical contact with the cathode catalyst layer.

25 ENERGY STORAGE↗

Carbon Corrosion in Polymer Electrolyte Fuel Cells: A Complex Interplay between Morphological Changes and Electrochemical Performance

Due to the high gravimetric energy density of hydrogen, the focus of implementation of polymer electrolyte fuel cells (PEFCs) has shifted from light duty passenger vehicles to heavy duty vehicles such as buses, trucks, locomotives and marine vessels. A mechanistic understanding of degradation is therefore necessary to improve durability and efficiency. During start-up and shut-down (SUSD) of PEFC systems, the catalyst (Pt nanoparticles embedded on carbon support) undergoes local potentials ~ 1 - 1.5 V caused by a combination of fuel (H 2 ) starvation, mixed fuel region and cell reversal. This leads to a series of degradation phenomenon including reduction in cathode catalyst layer (cCL) thickness and porosity, loss in electrochemical surface area (ECSA), ionomer degradation and loss in electrical contact, therefore resulting in severe performance loss. The convoluted relationship between these individual degradation mechanisms, their chronology and their effects on electrochemical performance are yet unresolved. Here, the complex interplay between morphological changes due to carbon corrosion and its effects on the electrochemical performance were analyzed using a combination of detailed electrochemical characterization, spectroscopy, and electron microscopy techniques.

25 ENERGY STORAGE↗

TTW (Transition to Wire Device) [SWR-25-02]

The Transition to Wire (TTW) hardware project is a method for connecting solar research samples with fragile interconnects to robust, weatherproof and consistent commercial connectors. The Transition to Wire device is a printed circuit board designed to facilitate the transition from tab ribbon or other unsecured electrical contacts on research samples to either wires or a connector. The four pin connector provides a kelvin (4 wire) connection at the solder pad where the sample connects.

McDanold, Byron↗

Whether at Home or the Office -- Keep in Mind Power Strip Safety (LL-2020-002)

Purpose: To remind personnel of potential power strip electrical hazards at the office and home Before you reach for that power strip, read this! This Lessons Learned Snapshot highlights the very real potential for electrical contact with power strip usage. It happens more often than you might think! But there are ways to reduce this potential.

96 KNOWLEDGE MANAGEMENT AND PRESERVATION↗

Task 12 PV Sustainability - Human Health Risk Assessment Methods for PV, Part 3: Module Disposal Risks

End-of-life management is important for addressing large future photovoltaic (PV) waste volumes and conserving raw materials for use in new PV modules. In regions without regulatory mandates for PV recycling, end-of-life PV modules can be disposed in accordance with general waste laws. Given the use of various metals as raw materials in semiconductor compounds and electrical contacts in commercial PV modules, some stakeholders have raised concerns regarding potential environmental impacts if PV modules are subject to improper disposal instead of being recycled or disposed in sanitary landfills, as is required in most world regions. To evaluate these concerns, screening-level risk assessment methods are developed herein that evaluate potential human health risks from groundwater and surface (air, soil, surface water) exposure pathways. The methods estimate potential impacts from disposal of end-of-life (EOL) PV modules in non-sanitary landfills under the following worst-case conditions: no leachate collection or groundwater monitoring, no liner for preventing leachate migration, uncovered waste, and lack of stormwater management. Examining worst-case conditions allows the exploration of maximum potential risk to attempt to ensure disposal does not increase health risk above regulatory thresholds. Specifically, this report presents an analysis of potential human health risks associated with non-sanitary landfill disposal for three PV technologies, focusing on release of the highest-prioritized chemical element for each: lead (Pb) in crystalline-silicon (c-Si) PV modules, cadmium (Cd) in thin film cadmium telluride (CdTe) PV modules, and selenium (Se) in thin film copper indium selenide (CIS) PV modules. The prioritization of these chemical elements for analysis is based on stakeholder interest. Because the methodology is chemical-specific, the risk assessment results for these chemicals cannot be directly generalized to other chemicals, although the risk assessment methodology can be applied to other chemicals. If the chemicals chosen are indeed the ones presenting greatest risk, then the results herein should represent the upper bound of health risk from exposure to a single constituent.

14 SOLAR ENERGY↗

Wafer-Free Crystalline Silicon Solar Cells (CRADA Final Report)

This CRADA project, based on the DOE Solar Energy Technologies Office (SETO) Solar Prize Voucher program, helped Leap Photovoltaics to develop methodologies to immobilize Si particles by permanently attaching them to an Al-coated substrate and thereby forming carrier-selective electrical contacts to the Si particles. The bigger goal was to help Leap Photovoltaics develop these immobilized and contacted particle arrays into relatively efficient, inexpensive, and industrially relevant solar cells. By using Si particles instead of wafers in a solar cell absorber layer, one can avoid costs associated with growing monocrystalline Si ingots, then diamond-sawing them into wafers, then processing wafers into cells – a mainstream practice in today's high-efficiency Si cell and module technology. Monocrystalline or polycrystalline Si particles can be obtained in various ways: for example, Si kerf from wafer sawing is monocrystalline; recycled Si cell wafers can be ball-milled into particles; particles can be grown using various gas-phase techniques (mostly from SiH4). These Si particles can be assembled onto a substrate and serve as an absorber layer for the solar cell, absorbing photons to generate photocarriers. The challenge with this technique is to collect photocarriers from individual Si particles, with separation of photogenerated electrons to the negative cell’s electrode and positive photogenerated holes to the positive electrode. Therefore, each particle must have two isolated, carrier-selective contacts: one for electrons and one for holes. Plus, particles need to be immobilized onto a solid substrate. The goal of this work was focused on the immobilization of Si particles and creating hole-selective contact to them at the same time, using industrially relevant Si photovoltaic (PV) cell technology: screen printing of Al back-surface field electrodes. This is used in the mainstream Propane Education and Research Council (PERC) technology for hole-collecting contacts at the back of the cell. The work performed at NREL consisted of screen printing of Al metal paste on substrates, spreading Si particles onto it, and thermally processing the structures to form hole-collecting contacts. The final structures were investigated by scanning electron microscopy (SEM) after focused ion beam (FIB) cross-sectioning and polishing. The work was done jointly by NREL staff and Leap Photovoltaics (Leap PV) employees stationed at NREL. The samples were then taken to Leap PV for further processing. Training the Leap PV employee on various NREL techniques (laser cutting, screen printing, thermal processing, characterization) was part of the scope.

14 SOLAR ENERGY↗

Feasibility Assessment of Using Electrical Impedance Tomography for Damage Localization in Graphite Microreactor Components

Microreactors have great potential to decrease capital costs and construction timelines, reducing the barriers to implementing advanced nuclear reactor technologies. However, the lower power output of these microreactors introduces economic challenges if the operation and maintenance costs cannot be reduced sufficiently. Many microreactor concepts use graphite materials for in-core moderator and structural purposes, which will require periodic inspection or, ideally, in situ structural health monitoring. This work describes an initial evaluation of the feasibility of leveraging graphite’s semiconducting properties to perform electrical impedance tomography (EIT) for defect localization. First, a study was performed to identify the best methods for bonding electrical contacts to minimize the effects of contact resistance that interfere with impedance measurements of the graphite. After determining the best bonding approach, electrodes were attached to multiple graphite components with varying geometries (e.g., simple block and more representative microreactor hexagonal block). In parallel, finite element analysis approaches were developed and implemented to analyze the impact of defects and contact resistances and to inform an iterative inverse model for reconstructing the conductivity distribution. The results of this study show that defect localization in graphite components is possible using EIT if a sufficient number of electrodes (to improve spatial resolution) can be bonded using a technique with very low contact resistance and those contact resistances remain stable during reactor operation. If the reactor core and vessel design do not allow electrodes to be bonded during reactor operation, then it may be possible to detach/reattach electrodes between reactor operation and outages if a suitable mechanical connection that offers repeatable contact resistance can be identified. Alternatively, future work could focus on identifying contacts that can survive the harsh reactor operating environment so that contacts do not need to be removed.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Towards Commercialization of Low-Cost, Crack-Tolerant, Screen-Printable Metallization by Full-Size Module Testing and Field Characterization

This project is motivated by the need to develop a materials engineering solution to reduce solar module degradation caused by cell cracks. The cell-crack-induced power loss is a long-term degradation mechanism and one of the main causes of solar panel field failures. Cell cracks can occur during module fabrication, transportation, installation, and long-term operation due to thermomechanical stressors. Our team’s internal estimation – based on the national weather pattern, frequency of severe weather, and 39- GW asset survey by Heliolytics – reveals that the cell-crack-induced module degradation translates to lost revenues >$17B over an average 5-year period for solar farm owners and to reduced reliability (<25 years panel lifetime) for solar energy consumers. In response to this challenge, the prime recipient offers a metal matrix composite (MMC) silver paste that is tailor-engineered for screen-printing gridlines and busbars, which serve as the electrical contacts on solar cells. We formulate our MMC paste by adding low-cost (∼0.02¢/WDC for research grade), surface-engineered carbon nanotubes to commercially available silver paste. The MMC paste offers a drop-in, cost-effective solution to cell cracks for solar cell and module manufacturers. The main goal of this project was to conduct field-relevant, module-level analysis and qualification of MMC metallization.

14 SOLAR ENERGY↗

Thin-Entrance Window Process for Soft X-Ray Sensors

New free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250 eV to 1.5 KeV. Achieving adequately shallow entrance windows is challenging because the high temperature anneal needed to activate the dopant also drives the dopant profile deeper, growing the region that is insensitive to soft x-rays. A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. The microwave anneal technique can activate dopants at low substrate temperature, with minimal dopant diffusion, and can be used to fabricate both n-type and p-type entrance windows. SRP and SIMS measurements were used to verify dopant activation with negligible dopant diffusion. We then applied the microwave anneal process to a planar sensor wafer, using the new process to create the backside diode contact. Electrical test of the resulting sensors shows good reverse bias characteristics. The sensors have been bump-bonded to a read-out ASIC and used successfully to measure an Fe-55 x-ray spectrum. Process and device simulations were performed to characterize the quantum efficiency of the entrance window for soft x-rays. This technique is useful for other sensor applications requiring a shallow entrance window, including detectors for UV photons, low energy ions and low energy electrons.

47 OTHER INSTRUMENTATION↗

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.

42 ENGINEERING↗

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

TCF Base Technology-Specific Final Report: Negative Cracked Film Lithography for PERC CdTe

NLR worked with the world's leading thin-film photovoltaic manufacturer - First Solar, an American company - to develop electrical contacting methods that improve the power conversion efficiency of First Solar's cells by 0.5% absolute. We met this milestone but contrary to our hypothesis, these performance gains are not passivation (PERC)-based. Instead, we identified another mechanism by which our micropatterned Al 2 O 3 contacts improve efficiency. Using the results of this project, we will adapt NLR's cracked film lithography intellectual property (IP) toward the application we identified, which is a new route to commercialization.

14 SOLAR ENERGY↗

Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

36 MATERIALS SCIENCE↗

Dielectrics for Power Electronics Applications

This presentation discusses the role of dielectric materials in power electronic packages. Two dielectric technologies - a dielectric material film-based substrate for insulation and a dielectric coolant - are discussed. The thermal performance benefits of dielectric film-based substrate in comparison with traditional direct-bond-copper substrates are studied through finite element analysis. Also, a novel cooling concept based on dielectric liquids that can contact electrically active surfaces are presented.

30 DIRECT ENERGY CONVERSION↗

Solder hermetic sealing for OLEDs

An OLED device comprising a substrate with a top surface; a first electrode covering the top surface of the substrate; a first insulating structure patterned over a portion of the first electrode where the pattern defines an inside area of the first electrode that is completely surrounded by the insulating structure, and an outside area of the first electrode not covered by the insulating structure; at least one organic layer for light emission within the inside area defined by the insulating structure; a second electrode over the at least one organic layer within the inside area defined by the insulating structure and at least partially over the first insulating structure; a cover slip located at least over the second electrode in the inside area defined by the insulating structure; and an electrically conductive solder seal making a hermetic seal between the insulating structure and the cover slip where the solder seal is in electrical contact with the second electrode. The insulating structure is desirably made of glass frit.

42 ENGINEERING↗