Nonhazardous acid etches weld samples
Nonhazardous citric acid solution used with 24 volt dc power supply etches weld samples. This etching method is limited to 300 stainless steel and a small range of other high temperature alloys.
Allen, B. C↗
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Hydrogen peroxide etching proves useful for germanium
Influence of process variations in the etching of germanium with hydrogen peroxide has been studied, along with damage effects due to radiation. The work advances the knowledge of the etching process for germanium.
Dayal, Y.↗
Controlled etching of printed-circuit boards
Ferric chloride in an aqueous medium etches copper from the surface of printed-circuit boards. Ferric ions are reduced to ferrous ions resulting in a reduced etching rate.
Kovell, S. P.↗
Ultrasonic metal etching for metallographic analysis
Ultrasonic etching delineates microstructural features not discernible in specimens prepared for metallographic analysis by standard chemical etching procedures. Cavitation bubbles in ultrasonically excited water produce preferential damage /etching/ of metallurgical phases or grain boundaries, depending on hardness of metal specimens.
Young, S. G.↗
The nature of dark-etching rims in meteoritic taenite.
Taenite fields when etched develop a cloudy brown rim with approximate compositional limits of 25 and 40% Ni. In iron meteorites this cloudy zone is only a few microns wide, with a sharp, high-Ni edge about 1 micron from the kamacite interface and a diffuse edge several microns from the central plessite. It is always present in irons unless the meteorite has been cosmically or terrestrially reheated. X-ray and electron diffraction of grains scratched from exceptionally larger areas of cloudy taenite in the mesosiderite Estherville show that this etching zone contains a fine exsolution of kamacite. Detailed electron-probe investigations of taenite in Estherville show that there is a step in the M-shaped Ni profile at the sharp, high-Ni edge of the cloudy region, the Ni dropping suddenly from approximately 45 to 42%. It is proposed that exsolution in the cloudy region effectively froze in the Ni profile at that temperature. On subsequent cooling only the clear outer taenite continued to equilibrate with the kamacite matrix, producing the kink in the M profile. Cloudy taenite is therefore a variety of plessite differing from the usual varieties in that it forms at lower temperatures in areas much richer in Ni, and the morphology is not crystallographically oriented. Its absence can provide a sensitive indication of reheating.
Scott, E. R. D.↗
Sputtered gold mask for deep chemical etching of silicon
Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.
Pisciotta, B. P.↗
Improved photochemical etching of stainless steel
Improved process yields tougher and more adherent coating that withstands longer exposure to acid etch spray without cracking or flaking and permits etching to depth of 0.127 cm.
Lotgering, G. E.↗
Rare gases in etched 10084 ilmenite - A search for trapped solar-flare rare gases
Results are presented of rare-gas analyses of 10084 ilmenite samples which have been etched to depths of about 1 micrometer in an attempt to remove the surface layer of trapped solar-wind gases, thereby allowing detection of the more deeply implanted solar-flare ions in the remaining trapped gases. A tendency found for the Ne-20/Ne-22 ratios in the etched ilmenite to reflect the solar-wind ratio measured in the solar-wind composition experiment foils may represent a cancellation of mass-fractionation effects. The Ne-20/Ne-22 ratio in the saturated layer is lowered with respect to the solar wind by preferential diffusive loss, but is raised again in the gas diffusing inward by the same preferential mobilization of Ne-20 relative to Ne-22. Attention is also given to the significance of the findings in the case of argon, krypton, and xenon.
Leich, D. A.↗
Homogeneous alignment of nematic liquid crystals by ion beam etched surfaces
A wide range of the ion beam etch parameters are capable of producing uniform homogeneous alignment of nematic liquid crystals on SiO2 films. The alignment surfaces were generated by obliquely incident argon ions; a smaller range of ion beam parameters was also investigated with ZrO2 films and found suitable for homogeneous alignment. Extinction ratios were very high, and twist and tilt-bias angles were very small. The SEM results indicate a parallel oriented surface structure on the ion beam etched surfaces which may determine alignment.
Wintucky, E. G.↗
The development of a method of producing etch resistant wax patterns on solar cells
A potentially attractive technique for wax masking of solar cells prior to etching processes was studied. This technique made use of a reuseable wax composition which was applied to the solar cell in patterned form by means of a letterpress printing method. After standard wet etching was performed, wax removal by means of hot water was investigated. Application of the letterpress wax printing process to silicon was met with a number of difficulties. The most serious shortcoming of the process was its inability to produce consistently well-defined printed patterns on the hard silicon cell surface.
Pastirik, E.↗
Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.
Jhabvala, M. D.↗
Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching
It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.
Wurzbach, J. A.↗
Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt
The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.
Banks, B. A.↗
Electrochemical etching of the semiconductor lead tin telluride
Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid-liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.
Barber, P. G.↗
Laboratory simulation of meteoritic noble gases. II - Sorption of xenon on carbon: Etching and heating experiments
The release of trapped Xe from amorphous-C phases of meteorites is simulated experimentally by HNO3 etching of carbon-black and pyrolyzed polyvinylidene chloride samples exposed to Xe-127 for 0.5-240 h at 100-1000 C and then degassed for 9 h or more at the same temperatures, as reported by Wacker et al. (1985). The results are presented in tables and graphs and characterized in detail. Samples exposed at 100-200 C are found to lose most of their Xe after etching to a depth of only about 20 pm, while those exposed at 800-1000 C exhibit a second more tightly bound component extending to a depth of 3 nm, indicative of diffusion of Xe during exposure and resembling planetary Xe. The higher noble-gas concentrations measured in meteorites are attributed to rate-controlled Xe uptake over a long period in the solar nebula.
Zadnik, M. G.↗
Etching Silicon Films With Xenon Difluoride
Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.
Hecht, M. H.↗
Masking Technique for Ion-Beam Sputter Etching
Improved process for fabrication of integrated circuits developed. Technique utilizes simultaneous ion-beam sputter etching and carbon sputter deposition in conjunction with carbon sputter mask or organic mask decomposed to produce carbon-rich sputter-mask surface. Sputter etching process replenishes sputter mask with carbon to prevent premature mask loss.
Banks, B. A.↗
Ion beam sputter etching
An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.
Banks, Bruce A.↗