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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

SU-F-T-230: A Simple Method to Assess Accuracy of Dynamic Wave Arc Irradiation Using An Electronic Portal Imaging Device and Log Files

Purpose: The Dynamic Wave Arc (DWA) technique, where the multi-leaf collimator (MLC) and gantry/ring move simultaneously in a predefined non-coplanar trajectory, has been developed on the Vero4DRT. The aim of this study is to develop a simple method for quality assurance of DWA delivery using an electronic portal imaging device (EPID) measurements and log files analysis. Methods: The Vero4DRT has an EPID on the beam axis, the resolution of which is 0.18 mm/pixel at the isocenter plane. EPID images were acquired automatically. To verify the detection accuracy of the MLC position by EPID images, the MLC position with intentional errors was assessed. Tests were designed considering three factors: (1) accuracy of the MLC position (2) dose output consistency with variable dose rate (160–400 MU/min), gantry speed (2.4–6°/s), ring speed (0.5–2.5°/s), and (3) MLC speed (1.6–4.2 cm/s). All the patterns were delivered to the EPID and compared with those obtained with a stationary radiation beam with a 0° gantry angle. The irradiation log, including the MLC position and gantry/ring angle, were recorded simultaneously. To perform independent checks of the machine accuracy, the MLC position and gantry/ring angle position were assessed using log files. Results: 0.1 mm intentional error can be detected by the EPID, which is smaller than the EPID pixel size. The dose outputs with different conditions of the dose rate and gantry/ring speed and MLC speed showed good agreement, with a root mean square (RMS) error of 0.76%. The RMS error between the detected and recorded data were 0.1 mm for the MLC position, 0.12° for the gantry angle, and 0.07° for the ring angle. Conclusion: The MLC position and dose outputs in variable conditions during DWA irradiation can be easily detected using EPID measurements and log file analysis. The proposed method is useful for routine verification. This research is (partially) supported by the Practical Research for Innovative Cancer Control (15Ack0106151h0001) from Japan Agency for Medical Research and development, AMED. Authors Takashi Mizowaki and Masahiro Hiraoka have consultancy agreement with Mitsubishi Heavy Industries, Ltd., Japan.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

SU-F-T-515: Increased Skin Dose in Supine Craniospinal Irradiation Due to Carbon Fiber Couch and Vacuum Bag Immobilization Device

Purpose: To measure the surface dose for supine craniospinal irradiation employing posterior beams, treating through an imaging couch and BlueBag immobilization device. Methods: The percentage depth dose (PDD) in the buildup region of a clinical 6 MV photon beam was measured using an Advanced Markus parallel plate ionization chamber in a solid water phantom. The PDD from a 10×10 cm{sup 2} anterior beam was measured at 100 cm SSD, simulating a traditional prone craniospinal technique. The measurements were compared to commissioning and treatment planning system data. The PDD was also measured in a posterior setup with the phantom surface laying directly on the Brainlab carbon fiber imaging couch, with the phantom surface 100 cm from the source, simulating a supine craniospinal setup. The posterior measurements were repeated with a BlueBag vacuum immobilization device between the couch and phantom, with thicknesses of 1.7 cm and 5 cm. The PDD from a 10×10 cm{sup 2} field and a typical 6×30 cm{sup 2} craniospinal field were also compared. The PDDs were normalized at 5 cm to reflect typical craniospinal prescription dose normalization. Results: The measured PDD curve from the anterior setup agreed well with commissioning and treatment planning data, with surface doses of 19.9%, 28.8% and 27.7%, respectively. The surface doses of the 10×10 cm{sup 2} and 6×30 cm{sup 2} fields delivered through the imaging couch were both 122.4%. The supine setup yielded surface doses of 122.4%, 121.6%, and 119.6% for the couch only, 1.7 cm bag, and 5 cm bag setups, respectively. Conclusion: Delivering craniospinal irradiation through a carbon fiber couch removes the majority of skin sparing. The addition of a vacuum bag immobilization device restores some skin sparing, but the magnitude of this effect is negligible.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Optically controlled multiple switching operations of DNA biopolymer devices

We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗
DOE OSTI2016

Silicon/HfO{sub 2} interface: Effects of gamma irradiation

Quality of MOS devices is a strong function of substrate and oxide interface. In this work we have studied how gamma photon irradiation affects the interface of a 13 nm thick, atomic layer deposited hafnium dioxide deposited on silicon wafer. CV and GV measurements have been done for pristine and irradiated samples to quantify the effect of gamma photon irradiation. Gamma photon irradiation not only introduces positive charge in the oxide and at the interface of Si/HfO{sub 2} interface but also induce phase change of oxide layer. Maximum oxide capacitances are affected by gamma photon irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1994

Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Woodyard, James R.↗
NASA NTRS1994

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗
DOE OSTI2024

Unraveling radiation damage and healing mechanisms in halide perovskites using energy-tuned dual irradiation dosing

Perovskite photovoltaics have been shown to recover, or heal, after radiation damage. Here, we deconvolve the effects of radiation based on different energy loss mechanisms from incident protons which induce defects or can promote efficiency recovery. We design a dual dose experiment first exposing devices to low-energy protons efficient in creating atomic displacements. Devices are then irradiated with high-energy protons that interact differently. Correlated with modeling, high-energy protons (with increased ionizing energy loss component) effectively anneal the initial radiation damage, and recover the device efficiency, thus directly detailing the different interactions of irradiation. We relate these differences to the energy loss (ionization or non-ionization) using simulation. Dual dose experiments provide insight into understanding the radiation response of perovskite solar cells and highlight that radiation-matter interactions in soft lattice materials are distinct from conventional semiconductors. These results present electronic ionization as a unique handle to remedying defects and trap states in perovskites.

14 SOLAR ENERGY↗
NASA NTRS1994

Investigation of the stability and 1.0 MeV proton radiation resistance of commercially produced hydrogenated amorphous silicon alloy solar cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters or fluences below 1(exp 14) cm(exp -2); fluences above 1(exp 14) cm(exp -2) require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗
DOE OSTI2019

Irradiance and temperature considerations in the design and deployment of high annual energy yield perovskite/CIGS tandems

The annual energy yields for metal halide perovskite/copper indium gallium diselenide (CIGS) tandem photovoltaics have been calculated for 16 different bandgap combinations, using both 2 terminal and 4 terminal device designs, with fixed-tilt mounting as well as 1- and 2-axis tracking. Measured complex index of refraction data were used for the materials comprising the devices, and hourly irradiance data were extracted from Version 3 of the National Solar Radiation Database. Simulations were performed for Toledo OH, Golden CO, Phoenix AZ, and New Orleans LA, and the effect of local temperature variation was also considered. The combination of irradiance and temperature variations throughout the year cause different devices to be optimal at different times of the year. Interestingly, devices constructed to maximize AM1.5 photoconversion efficiency do not necessarily maximize the annual energy yield. A detailed analysis of the monthly energy yields at the different locations reveals the interplay between the changing light and temperature conditions. Over the course of the year these effects average to some degree so that annual energy yields that are close to the maximum possible value can be achieved by several different tandem device designs. The conclusions are valid for devices made with relatively thin perovskite layers, such as those used in champion efficiency devices. When the perovskite layers are thicker, however, the device is less tolerant to variation. Our results show that close matching of bandgap pairs is not essential for the fabrication of high-performance tandems. These findings should allow manufacturing efforts to proceed without the need for precise compositional control during formation of the absorber layers.

14 SOLAR ENERGY↗
DOE OSTI2023

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2019

OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated.

Forney, James↗
DOE OSTI2022

Irradiation-induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN

Here, recent work to evaluate the prospects for surface acoustic wave (SAW) devices fabricated on bulk aluminum nitride (AlN) for elevated temperature and radiation environments is reported and discussed. The design and fabrication of an array of SAW devices using commercial wafers is described, including the non-standard fabrication approach taken to overcome the stress-induced warpage of the 50 mm diameter AlN substrates. Radio frequency performance characterization of the SAW devices, with resonance frequencies ranging from 0.5 GHz to 1.5 GHz, is described. The linear temperature coefficient of frequency (TCF) near room temperature was measured and is compared to theoretical results from other investigators. Further, the effects of 8 MeV Al ion irradiation at 300°C and 500°C to damage levels of 0.01, 0.1 and 1 displacements per atom (dpa), as a proxy for neutron irradiation, was investigated. The ion irradiation damage was observed to decrease the SAW resonant frequency, and this effect is characterized and discussed. Significant degradation in the conductivity of the Ti/Al electrodes of the SAW devices was also observed and characterized. These experimental results provide a basis for further investigation of the prospects for development of SAW sensor devices in bulk AlN material for application in elevated temperature and radiation environments.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.

Stanley, A. G.↗
NASA NTRS2004

Solar Variability and the Near-Earth Environment: Mining Enhanced Low Dose Rate Sensitivity Data From the Microelectronics and Photonics Test Bed Space Experiment

This effort is a detailed analysis of existing microelectronics and photonics test bed satellite data from one experiment, the bipolar test board, looking to improve our understanding of the enhanced low dose rate sensitivity (ELDRS) phenomenon. Over the past several years, extensive total dose irradiations of bipolar devices have demonstrated that many of these devices exhibited ELDRS. In sensitive bipolar transistors, ELDRS produced enhanced degradation of base current, resulting in enhanced gain degradation at dose rates <0.1 rd(Si)/s compared to similar transistors irradiated at dose rates >1 rd(Si)/s. This Technical Publication provides updated information about the test devices, the in-flight experiment, and both flight-and ground-based observations. Flight data are presented for the past 5 yr of the mission. These data are compared to ground-based data taken on devices from the same date code lots. Information about temperature fluctuations, power shutdowns, and other variables encountered during the space flight are documented.

Turflinger, T.↗
DOE OSTI2015

The 14 MeV Neutron Irradiation Facility in MARIA Reactor

The MARIA reactor with thermal neutron flux density up to 3x10{sup 14} cm{sup -2} s{sup -1} and a number of vertical channels is well suited to material testing by thermal neutron treatment. Beside of that some fast neutron irradiation facilities are operated in MARIA reactor as well. One of them is thermal to 14 MeV neutron converter launched in 2014. It is especially devoted to fusion devices material testing irradiation. The ITER and DEMO research thermonuclear facilities are to be run using the deuterium - tritium fusion reaction. Fast neutrons (of energy approximately 14 MeV) resulting from the reaction are essential to carry away the released thermonuclear energy and to breed tritium. However, constructional materials of which thermonuclear reactors are to be built must be specially selected to survive intense fluxes of fast neutrons. Strong sources of 14 MeV neutrons are needed if research on resistance of candidate materials to such fluxes is to be carried out effectively. Nuclear reactor-based converter capable to convert thermal neutrons into 14 MeV fast neutrons may be used to that purpose. The converter based on two stage nuclear reaction on lithium-6 and deuterium compounds leading to 14 MeV neutron production. The reaction chain is begun by thermal neutron capture by lithium-6 nucleus resulted in triton release. The neutron and triton transport calculations have been therefore carried-out to estimate the thermal to 14 MeV neutron conversion efficiency and optimize converter construction. The usable irradiation space of ca. 60 cm{sup 3} has been obtained. The released energy have been calculated. Heat transport has been asses to ensure proper device cooling. A set of thermocouples has been installed in converter to monitor its temperature distribution on-line. Influence of converter on reactor operation has been studied. Safety analyses of steady states and transients have been done. Performed calculations and analyses allow designing the converter and formulate its operation limits and conditions. During first tested operation of the converter the 14 MeV neutron flux density was estimated to 10{sup 9} cm{sup -2} s{sup -1}, whereas fast fission neutrons inside converter achieved 10{sup 12} cm{sup -2} s{sup -1}, and thermal neutrons were reduced down to 109 cm-2 s-1. Taking into account the feasibility of almost incessant converter operation for a number of months, its arisen as one of the most powerful (in terms of fluence), currently available 14 MeV neutron source. Such a converter currently under operation in the MARIA reactor core will be presented. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2015

Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components.

The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I 3 TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

36 MATERIALS SCIENCE↗