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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

RD53 pixel readout integrated circuits for ATLAS and CMS HL-LHC upgrades

The RD53 collaboration has since 2013 developed new hybrid pixel detector chips with 50 × 50 μm2 pixels for the HL-LHC upgrades of the ATLAS and CMS experiments at CERN. A common architecture, design and verification framework has been developed to enable final pixel chips of different sizes to be designed, verified and tested to handle extreme hit rates of 3 GHz/cm2 (up to 12 GHz per chip) together with an increased trigger rate of 1 MHz and efficient readout of up to 5.12 Gbits/s per pixel chip. Tolerance to an extremely hostile radiation environment with 1 Grad over 10 years and induced SEU (Single Event Upset) rates of up to 100 upsets per second per chip have been major challenges to make reliable pixel chips. Three generations of pixel chips, and many specific mixed signal building blocks and radiation test chips, have been submitted and extensively tested to get to final production chips. The large, complex and high rate pixel chips have been developed with a strong emphasis on low power consumption together with a concurrent development and qualification of novel serial powering at chip, module and system level, to minimize detector material budget.

Alimonti, G↗
NASA NTRS1992

Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser

A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.

Kim, Q.↗
NASA NTRS2008

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

LaBel, Kenneth A.↗
NASA NTRS2003

Characteristics of Single-Event Upsets in a Fabric Switch (ADS151)

Abstract-Two types of single event effects - bit errors and single event functional interrupts - were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion LET and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single event functional interrupts occurred when the laser was focused on the second rank latch containing the data specifying the state of each switch in the 33x17 matrix.

Buchner, Stephen↗
NASA NTRS2017

Single Event Effect Testing of the Micron MT46V128M8

The Micron MT46V128M8 was tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in June of 2017. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI) and possible soft data errors classified as single event upsets (SEU).

Single Event Functional Interrupts (SEFI)↗
NASA NTRS2004

A Re-programmable Platform for Dynamic Burn-in Test of Xilinx Virtexll 3000 FPGA for Military and Aerospace Applications

Field Programmable Gate Arrays (FPGA) have played increasingly important roles in military and aerospace applications. Xilinx SRAM-based FPGAs have been extensively used in commercial applications. They have been used less frequently in space flight applications due to their susceptibility to single-event upsets. Reliability of these devices in space applications is a concern that has not been addressed. The objective of this project is to design a fully programmable hardware/software platform that allows (but is not limited to) comprehensive static/dynamic burn-in test of Virtex-II 3000 FPGAs, at speed test and SEU test. Conventional methods test very few discrete AC parameters (primarily switching) of a given integrated circuit. This approach will test any possible configuration of the FPGA and any associated performance parameters. It allows complete or partial re-programming of the FPGA and verification of the program by using read back followed by dynamic test. Designers have full control over which functional elements of the FPGA to stress. They can completely simulate all possible types of configurations/functions. Another benefit of this platform is that it allows collecting information on elevation of the junction temperature as a function of gate utilization, operating frequency and functionality. A software tool has been implemented to demonstrate the various features of the system. The software consists of three major parts: the parallel interface driver, main system procedure and a graphical user interface (GUI).

Field Programmable Gate Arrays (FPGA)↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗
NASA NTRS2014

Investigation of HZETRN 2010 as a Tool for Single Event Effect Qualification of Avionics Systems

NASA's future missions are focused on long-duration deep space missions for human exploration which offers no options for a quick emergency return to Earth. The combination of long mission duration with no quick emergency return option leads to unprecedented spacecraft system safety and reliability requirements. It is important that spacecraft avionics systems for human deep space missions are not susceptible to Single Event Effect (SEE) failures caused by space radiation (primarily the continuous galactic cosmic ray background and the occasional solar particle event) interactions with electronic components and systems. SEE effects are typically managed during the design, development, and test (DD&T) phase of spacecraft development by using heritage hardware (if possible) and through extensive component level testing, followed by system level failure analysis tasks that are both time consuming and costly. The ultimate product of the SEE DD&T program is a prediction of spacecraft avionics reliability in the flight environment produced using various nuclear reaction and transport codes in combination with the component and subsystem level radiation test data. Previous work by Koontz, et al.1 utilized FLUKA, a Monte Carlo nuclear reaction and transport code, to calculate SEE and single event upset (SEU) rates. This code was then validated against in-flight data for a variety of spacecraft and space flight environments. However, FLUKA has a long run-time (on the order of days). CREME962, an easy to use deterministic code offering short run times, was also compared with FLUKA predictions and in-flight data. CREME96, though fast and easy to use, has not been updated in several years and underestimates secondary particle shower effects in spacecraft structural shielding mass. Thus, this paper will investigate the use of HZETRN 20103, a fast and easy to use deterministic transport code, similar to CREME96, that was developed at NASA Langley Research Center primarily for flight crew ionizing radiation dose assessments. HZETRN 2010 includes updates to address secondary particle shower effects more accurately, and might be used as another tool to verify spacecraft avionics system reliability in space flight SEE environments.

Rojdev, Kristina↗
NASA NTRS2010

Single Event Test Methodologies and System Error Rate Analysis for Triple Modular Redundant Field Programmable Gate Arrays

We present a test methodology for estimating system error rates of Field Programmable Gate Arrays (FPGAs) mitigated with Triple Modular Redundancy (TMR). The test methodology is founded in a mathematical model, which is also presented. Accelerator data from 90 nm Xilins Military/Aerospace grade FPGA are shown to fit the model. Fault injection (FI) results are discussed and related to the test data. Design implementation and the corresponding impact of multiple bit upset (MBU) are also discussed.

error rate calculations↗
NASA NTRS1994

Making A D-Latch Sensitive To Alpha Particles

Standard complementary metal oxide/semiconductor (CMOS) D-latch integrated circuit modified to increase susceptibility to single-event upsets (SEU's) (changes in logic state) caused by impacts of energetic alpha particles. Suitable for use in relatively inexpensive bench-scale SEU tests of itself and of related integrated circuits like static random-access memories.

Buehler, Martin G.↗
NASA NTRS2001

A SEU-Hard Flip-Flop for Antifuse FPGAs

A single event upset (SEU)-hardened flip-flop has been designed and developed for antifuse Field Programmable Gate Array (FPGA) application. Design and application issues, testability, test methods, simulation, and results are discussed.

Katz, R.↗
NASA NTRS2014

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗
NASA NTRS2015

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

spacecraft electronics↗
NASA NTRS2016

Goal Structured Notation in a Radiation Hardening Safety Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structured Notation (GSN) for spacecraft containing COTS parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Assurance Case↗
NASA NTRS2016

Goal Structuring Notation in a Radiation Hardening Assurance Case for COTS-Based Spacecraft

A systematic approach is presented to constructing a radiation assurance case using Goal Structuring Notation (GSN) for spacecraft containing commercial-off-the-shelf (COTS) parts. The GSN paradigm is applied to an SRAM single-event upset experiment board designed to fly on a CubeSat November 2016. Construction of a radiation assurance case without use of hardened parts or extensive radiation testing is discussed.

Witulski, Arthur↗
NASA NTRS1990

Assessing the SEU resistance of CMOS latches using alpha-particle sensitive test circuits

The importance of Cosmic Rays on the performance of integrated circuits (IC's) in a space environment is evident in the upset rate of the Tracking and Data Relay Satellite (TDRS) launched in Apr. 1983. This satellite experiences a single-event-upset (SEU) per day which must be corrected from the ground. Such experience caused a redesign of the Galileo spacecraft with SEU resistant IC's. The solution to the SEU problem continues to be important as the complexity of spacecraft grows, the feature size of IC's decreases, and as space systems are designed with circuits fabricated at non-radiation hardened foundries. This paper describes an approach for verifying the susceptibility of CMOS latches to heavy-ion induced state changes. The approach utilizes alpha particles to induce the upsets in test circuits. These test circuits are standard cells that have offset voltages which sensitize the circuits to upsets. These results are then used to calculate the upsetability at operating voltages. In this study results are presented for the alpha particle upset of a six-transistor static random access memory (SRAM) cell. Then a methodology is described for the analysis of a standard-cell inverter latch.

Buehler, M.↗
NASA NTRS1981

Investigation for single-event upset in MSI devices

The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.

Woods, J. P.↗
NASA NTRS1991

Galileo environmental test and analysis program summary

This paper presents an overview of the Galileo Project's environmental test and analysis program during the spacecraft development phase - October 1978 through launch in October 1989. After describing the top-level objectives of the program, summaries of-the approach, requirements, and margins are provided. Examples of assembly- and system-level test results are given for both the pre-1986 (direct mission) testing and the post-1986 (Venus-Earth-Earth gravity assist mission) testing, including dynamic, thermal, electromagnetic compatibility (EMC), and magnetic. The approaches and results for verifying by analysis that the requirements of certain environments (e.g., radiation, micrometeoroids, and single event upsets) are satisfied are presented. The environmental program implemented on Galileo satisfied the spirit and intent of the requirements imposed by the Project during the spacecraft's development. The lessons learned from the Galileo environmental program are discussed in this paper.

Hoffman, A. R.↗