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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Martian Dust Abrasion Damage on Solar Arrays: HALT Experimental Investigation and Opportunity Rover Performance Analysis

We explored the utility of ground-based highly accelerated life testing (HALT) on epitaxial lift-off (ELO) triple-junction coverglass interconnected cells (CICs) after exposure to simulated Martian dust storms. Dust storm impingement was replicated by sandblasting CICs with Mars dust simulant replicating conditions similar to the weather conditions reported by the Viking landers. We observed that even in cases when there are no observable open circuit voltage (VOC) losses, the minority carrier lifetime is reduced. Short circuit current (JSC) losses can be recovered upon cleaning, suggesting JSC losses are not linked to permanent damage, like cell cracking. This suggests a permanent degradation could be determined by quantifying the difference between recoverable and non-recoverable power loss. We mined field data from the Mars Exploration Rover, Opportunity and extracted a degradation rate to compare to our experimental data. We found exceptional agreement between 4.9 Martian years of mined field data (9.4%) and the irreversible damage observed in our HALT experiment (9.7%). We demonstrate that the laboratory method for exposing CICs to Martian dust storm conditions well represents the physical reality of long duration CIC operation on Mars.

Lyndsey McMillon-Brown↗
NASA NTRS1998

Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 deg. C

The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.

Neudeck, Philip G.↗
NASA NTRS1984

Development of a 30 percent efficient 3-junction monolithic cascade solar cell

The individual subcells of the 3-junction monolithic cascade concentrator cell are grown lattice mismatched with respect to each other, if appropriate grading layers are inserted between the mismatched layers. Under these conditions, negligible degradation of the properties of either underlying or overlying material results, and high-efficiency subcells are produced by this technique.

Lewis, C. R.↗
NASA NTRS1996

InP tunnel junctions for InP/InGaAs tandem solar cells

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Vilela, Mauro F.↗
NASA NTRS1995

InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Vilela, M. F.↗
NASA NTRS1966

Beam splitter used in dual filming technique

Tubular tee is intersected at its junction by a reflecting/transmitting mirror angled to provide two images of an object for simultaneous photographing from two positions. This method is used when space and focal conditions are limited.

Zeldin, S.↗
NASA NTRS1981

Optimal trajectories in atmospheric flight

Aspects of optimization theory and switching theory are discussed, taking into account the necessary conditions for extrema, a solution subject to constraints, the calculus of variations, the Pontryagin maximum principle, the canonical transformation, Contensou's domain of maneuverability, optimal switching, a junction with singular arc, and linearized singular control. Equations of motion are considered along with aerodynamic and propulsive forces, the general properties of optimal trajectories, flight in a horizontal plane, optimal coasting flight, supersonic cruise, the supersonic turn, supersonic maneuvers in a vertical plane, energy state approximation, a modified Chapman's formulation for optimal reentry trajectories, optimal planar reentry trajectories, and an optimal glide of reentry vehicles. Orbital aerodynamic maneuvers are examined, giving attention to aerodynamic capture, a change in the apogee, a change in the eccentricity, a change in the perigee, an orbital maneuver, an aerodynamic maneuver, and a combined maneuver.

Vinh, N. X.↗
NASA NTRS1987

Excimer laser annealing: A gold process for CZ silicon junction formation

A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.

Wong, David C.↗
NASA NTRS2011

Prognostics of Power MOSFET

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

Celaya, Jose Ramon↗
NASA NTRS1971

Development of reverse biased p-n junction electron emission

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Fowler, P.↗
NASA NTRS1976

LaRC design analysis report for National Transonic Facility for 9% nickel tunnel shell. Volume 1: Finite difference analysis of cone/cylinder junction

The results of extensive computer (finite element, finite difference and numerical integration), thermal, fatigue, and special analyses of critical portions of a large pressurized, cryogenic wind tunnel (National Transonic Facility) are presented. The computer models, loading and boundary conditions are described. Graphic capability was used to display model geometry, section properties, and stress results. A stress criteria is presented for evaluation of the results of the analyses. Thermal analyses were performed for major critical and typical areas. Fatigue analyses of the entire tunnel circuit are presented.

Ramsey, J. W., Jr.↗
NASA NTRS1976

LaRC design analysis report for National Transonic Facility for 304 stainless steel tunnel shell. Volume 1S: Finite difference analysis of cone/cylinder junction

The results of extensive computer (finite element, finite difference and numerical integration), thermal, fatigue, and special analyses of critical portions of a large pressurized, cryogenic wind tunnel (National Transonic Facility) are presented. The computer models, loading and boundary conditions are described. Graphic capability was used to display model geometry, section properties, and stress results. A stress criteria is presented for evaluation of the results of the analyses. Thermal analyses were performed for major critical and typical areas. Fatigue analyses of the entire tunnel circuit are presented.

Ramsey, J. W., Jr.↗
NASA NTRS1995

Development of advanced Si and GaAs solar cells for interplanetary missions

The deep space and planetary exploration project have been acquiring more and more importance and some of them are now well established both in ESA and NASA programs. This paper presents the possibility to utilize both silicon and gallium arsenide solar cells as spacecraft primary power source for missions far from the Sun, in order to overcome the drawbacks related to the utilisation of radioisotope thermoelectric generators - such as cost, safety and social acceptance. The development of solar cells for low illumination intensity and low temperature (LILT) applications is carried out in Europe by ASE (Germany) and CISE (Italy) in the frame of an ESA programme, aimed to provide the photovoltaic generators for ROSETTA: the cometary material investigation mission scheduled for launch in 2003. The LILT cells development and testing objectives are therefore focused on the following requirements: insolation intensity as low as 0.03 Solar Constant, low temperature down to -150 C and solar flare proton environment. At this stage of development, after the completion of the technology verification tests, it has been demonstrated that suitable technologies are available for the qualification of both silicon and gallium arsenide cells and both candidates have shown conversion efficiencies over 25% at an illumination of 0.03 SC and a temperature of -150 C. In particular, when measured at those LILT conditions, the newly developed 'Hl-ETA/NR-LILT' silicon solar cells have reached a conversion efficiency of 26.3%, that is the highest value ever measured on a single junction solar cell. A large quantity of both 'Hl-ETA/NR-LILT' silicon and 'GaAs/Ge-LILT' solar cells are presently under fabrication and they will be submitted to a qualification test plan, including radiation exposure, in order to verify their applicability with respect to the mission requirements. The availability of two valid options will minimize the risk for the very ambitious scientific project. The paper describes how the technical achievements have been possible with Si and GaAs LILT solar cells (including a comparison between measured and modelled l-V characteristics) and it presents the technology verification tests results.

Strobl, G.↗
NASA NTRS2002

The Electrostatic Breakdown on Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in low-density plasmas. Two samples of conventional solar arrays and four different metal-quartz junctions have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. It has been proved that the are inception mechanism in plasma is different from one in vacuum.

Vayner, Boris V.↗
NASA NTRS1998

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.↗
NASA NTRS1971

Adavanced RTG and thermoelectric materials study

A comprehensive, generalized two-dimensional RTG analysis computer program was developed. This program is capable of analyzing any specified RTG design under a wide range of transient as well as steady-state operating conditions. The feasibility of a new concept for the design of segmented (or single-phase) thermoelectric couples was demonstrated. A SiGe-PbTe segmented couple involving pressure contacted junctions at the intermediate- and hot-junction temperatures was successfully encapsulated in a hermetically sealed bellows enclosure. This bellows-encapsulated couple was operated between a hot- and cold-junction temperature of 1200 K and 450 K, respectively, with a measured energy conversion efficiency of 7.6 + or - .5 per cent. An experimental study of selected sublimation barrier schemes revealed that a significant reduction in the sublimation rate of p-type PbTe could be achieved by using multiple layers of SiO2 fibers. A comparison of the barrier effectiveness is given for three different barrier designs.

Eggers, P. E.↗
NASA NTRS1986

Input impedance of a probe-fed circular microstrip antenna with thick substrate

A method of computing the input impedance for the probe fed circular microstrip antenna with thick dielectric substrate is presented. Utilizing the framework of the cavity model, the fields under the microstrip patch are expanded in a set of modes satisfying the boundary conditions on the eccentrically located probe, as well as on the cavity magnetic wall. A mode-matching technique is used to solve for the electric field at the junction between the cavity and the coaxial feed cable. The reflection coefficient of the transverse electromagnetic (TEM) mode incident in the coaxial cable is determined, from which the input impedance of the antenna is computed. Measured data are presented to verify the theoretical calculations. Results of the computation of various losses for the circular printed antenna as a function of substrate thickness are also included.

Davidovitz, M.↗