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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Device concept permits parallel computers to scan several commonnetwork-connected data stations at maximum rate. Sequencers leap-frog to bypass ports already being serviced by another computer. Two-path system for 16-port star switch controller is cost effective if added bandwidth or increased reliability is desired. Triple-path system would be cost effective for 32-port controller.
A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.
A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.
The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.
This study was undertaken to determine the Single Event Latchup (SEL) susceptibility of the Vishay DG403DY-E3 (Analog Switch). The device was under a biased and switching configuration during irradiation and continuously monitored for destructive events. The parts were tested at the Lawrence Berkeley National Laboratory 88 inch cyclotron facility
High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.
The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.
Device design, fabrication process, transistor evaluation, and test methods in development of 10 nanosecond semiconductor switch
The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.
Logic element switches flows of low pressure process control fluid in fluidics assemblies. Device operates both electrically and fluidically and is controlled by passing permanent magnet or electromagnet over elements, thus providing proximity switching functions.
This novel structure is a heterojunction phototransistor which can be used as an emitter-detector, and when placed in a quiescent mode, the device becomes a passive transmitter. By varying the voltage bias, this novel device will switch between all three modes of operation. Such a device has broad application in network environments with operation speeds of less than 50 MHz and distances of less than 1 km, e.g. automobiles, airplanes, and intra-instrumentation. During this period, the emission mode for this device was studied and mathematically modeled.
Electro-thermal-mechanical switches based on shape-memory effect in Ti-Ni alloys
We examine theoretically and experimentally the space-time domain properties of high-speed electro-optically switched microlaser devices susceptible of construction at optical wavelength-packing densities. We address adjustable phase and group delays with wide dynamic range, coherent logic, temporal storage and reconfiguration of pulse arrays and applications to optical phased arrays.
Solid state switch for electronic gating system in spacecraft with multiplexing applications
Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.
Aerospace projects have traditionally employed federated avionics architectures, in which each computer system is designed to perform one specific function (e.g. navigation). There are obvious downsides to this approach, including excessive weight (from so much computing hardware), and inefficient processor utilization (since modern processors are capable of performing multiple tasks). There has therefore been a push for integrated modular avionics (IMA), in which common computing platforms can be leveraged for different purposes. This consolidation of multiple vehicle functions to shared computing platforms can significantly reduce spacecraft cost, weight, and design complexity. However, the application of IMA principles introduces significant challenges, as the data network must accommodate traffic of mixed criticality and performance levels - potentially all related to the same shared computer hardware. Because individual network technologies are rarely so competent, the development of truly integrated network architectures often proves unreasonable. Several different types of networks are utilized - each suited to support a specific vehicle function. Critical functions are typically driven by precise timing loops, requiring networks with strict guarantees regarding message latency (i.e. determinism) and fault-tolerance. Alternatively, non-critical systems generally employ data networks prioritizing flexibility and high performance over reliable operation. Switched Ethernet has seen widespread success filling this role in terrestrial applications. Its high speed, flexibility, and the availability of inexpensive commercial off-the-shelf (COTS) components make it desirable for inclusion in spacecraft platforms. Basic Ethernet configurations have been incorporated into several preexisting aerospace projects, including both the Space Shuttle and International Space Station (ISS). However, classical switched Ethernet cannot provide the high level of network determinism required by real-time spacecraft applications. Even with modern advancements, the uncoordinated (i.e. event-driven) nature of Ethernet communication unavoidably leads to message contention within network switches. The arbitration process used to resolve such conflicts introduces variation in the time it takes for messages to be forwarded. TTEthernet1 introduces decentralized clock synchronization to switched Ethernet, enabling message transmission according to a time-triggered (TT) paradigm. A network planning tool is used to allocate each device a finite amount of time in which it may transmit a frame. Each time slot is repeated sequentially to form a periodic communication schedule that is then loaded onto each TTEthernet device (e.g. switches and end systems). Each network participant references the synchronized time in order to dispatch messages at predetermined instances. This schedule guarantees that no contention exists between time-triggered Ethernet frames in the network switches, therefore eliminating the need for arbitration (and the timing variation it causes). Besides time-triggered messaging, TTEthernet networks may provide two additional traffic classes to support communication of different criticality levels. In the rate-constrained (RC) traffic class, the frame payload size and rate of transmission along each communication channel are limited to predetermined maximums. The network switches can therefore be configured to accommodate the known worst-case traffic pattern, and buffer overflows can be eliminated. The best-effort (BE) traffic class behaves akin to classical Ethernet. No guarantees are provided regarding transmission latency or successful message delivery. TTEthernet coordinates transmission of all three traffic classes over the same physical connections, therefore accommodating the full spectrum of traffic criticality levels required in IMA architectures. Common computing platforms (e.g. LRUs) can share networking resources in such a way that failures in non-critical systems (using BE or RC communication modes) cannot impact flight-critical functions (using TT communication). Furthermore, TTEthernet hardware (e.g. switches, cabling) can be shared by both TTEthernet and classical Ethernet traffic.
This story begins with a bit of serendipity: I was on a trip to see a Shuttle launch and I happened to sit next to a guy who was in charge of batteries for Space Systems/Loral. He told me that they needed to create a new battery bypass switch, the device that takes a battery out of commission if it goes bad. After discussing the conversation back at my company, we decided that we could create the switch. We contacted the folks at Loral and they said, 'Okay, let s see what you can come up with. We need it as small as possible.' We asked, 'How small?' They said, 'We need it as small as you can possibly make it.'
Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.