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Results for “test effectiveness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

We report low-energy proton and low-energy alpha particle single-event effects (SEE) data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) latches and static random access memory (SRAM) that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 megaelectron-volt. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.

random access memory↗
NASA NTRS2011

Improving Single Event Effects Testing Through Software

Radiation encountered in space environments can be damaging to microelectronics and potentially cause spacecraft failure. Single event effects (SEE) are a type of radiation effect that occur when an ion strikes a device. Single event gate rupture (SEGR) is a type of SEE that can cause failure in power transistors. Unlike other SEE rates in which a constant linear energy transfer (LET) can be used, SEGR rates sometimes require a non-uniform LET to be used to be accurate. A recent analysis shows that SEGR rates are most easily calculated when the environment is described as a stopping rate per unit volume for each ion species. Stopping rates in silicon for pertinent ions were calculated using the Stopping and Range of Ions in Matter (SRIM) software and CREME-MC software. A reference table was generated and can be used by others to calculate SEGR rates for a candidate device. Additionally, lasers can be used to simulate SEEs, providing more control and information at lower cost than heavy ion testing. The electron/hole pair generation rate from a laser pulse in a semiconductor can be related to the LET of an ion. MATLAB was used to generate a plot to easily make this comparison.

generation equation↗
NASA NTRS2024

Single Event Effects Test Report Vishay Siliconix Si7113DN P-Channel 100V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the Si7113DN P-Channel 100V MOSFET from Vishay Siliconix. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkely Accelerator Space Effects (BASE) Facility at the Lawrence Berkely National Laboratory (LBNL).

MOSFET↗
DOE OSTI2017

Tribology behavior on scratch tests: Effects of yield strength

In this paper, a three-dimensional (3D) scratch model is proposed to investigate the effects of yield strength of both coatings and substrates. With the help of combined Coulomb and plastic friction, the obtained results comprehensively interpret the experimental phenomena in most metals that with the growth of hardness after heat treatment the scratch friction coefficient (SFC) increases. This interpretation could not be done before. Scratch tests on the surface with or without the coating are discussed. Without the coating the SFC increases due to the decrease of the area with plastic slippage and/or the increase of friction stress during the increase of the yield strength in the material. With a softer substrate the friction stress decreases but the SFC increases, which is caused by the growth of the entire contact area and surface deformation. Conversely, with a stronger substrate the SFC decreases due to an intensified plastic slippage In conclusion, the obtained results pave a new way to understanding the effects of yield strength on scratch tests, interpret experimental phenomena, and should be helpful for an optimum design in experiments.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Accelerated life testing effects on CMOS microcircuit characteristics

This report covers the time period from May 1976 to December 1979 and encompasses the three phases of accelerated testing: Phase 1, the 250 C testing; Phase 2, the 200 C testing; and Phase 3, the 125 C testing. The duration of the test in Phase 1 and Phase 2 was sufficient to take the devices into the wear out region. The wear out distributions were used to estimate the activation energy between the 250 C and the 200 C test temperatures. The duration of the 125 C test, 20,000 hours, was not sufficient to bring the test devices into the wear out region; consequently the third data point at 125 C for determining the consistency of activation energy could not be obtained. It was estimated that, for the most complex of the three device types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment was assessed. Guidelines for the development of accelerated life test conditions were proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life test characteristics of CMOS microcircuits was explored in Phase 4 of this study and is attached as an appendix to this report.

Source record↗
DOE OSTI2022

GCR: Alloy 617 Notch Effect Testing Status

A presentation that discusses ongoing work being conducted at INL to understand the impact of a multiaxial stress, structural discontinuities, and notch effects.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-Fluence Active Irradiation and Combined Effects Testing of Sapphire Optical Fiber Distributed Temperature Sensors - ASI Project Summary

The goal of this work is to investigate the performance of sapphire optical fiber temperature sensors and develop clad sapphire optical fibers for in-pile instrumentation. This work tests the distributed sensing performance of sapphire sensors by using optical backscatter reflectometry methods under combined radiation/temperature effects and high fluence. A series of irradiations will be completed to evaluate the effect of irradiation on sapphire optical fiber temperature sensors and to determine an operational limit for the sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1999

A Methodology for the Measurement of Test Effectiveness

In developing a software system, we would like to estimate the total number of faults inserted in to the system, its residual fault content at any given time, and the efficacy of the testing activity in executing the code containing the newly inserted faults.

software reliability software faults software faul↗
NASA NTRS2006

Single Event Effects Test Results for Advanced Field Programmable Gate Arrays

Reconfigurable Field Programmable Gate Arrays (FPGAs) from Altera and Actel and an FPGA-based quick-turnApplication Specific Integrated Circuit (ASIC) from Altera were subjected to single-event testing using heavy ions. Both Altera devices (Stratix II and HardCopy II) exhibited a low latchup threshold (below an LET of 3 MeV-cm2/mg) and thus are not recommended for applications in the space radiation environment. The flash-based Actel ProASIC Plus device did not exhibit latchup to an effective LET of 75 MeV-cm2/mg at room temperature. In addition, these tests did not show flash cell charge loss (upset) or retention damage. Upset characterization of the design-level flip-flops yielded an LET threshold below 10 MeV-cm2/mg and a high LET cross section of about lxlO-6 cm2/bit for storing ones and about lxl0-7 cm2/bit for storing zeros . Thus, the ProASIC device may be suitable for critical flight applications with appropriate triple modular redundancy mitigation techniques.

Field Programmable Gate Arrays↗
NASA NTRS1999

Propulsion Induced Effects Test Program

The objective of this milestone is to assess the propulsion/airframe integration characteristics of the Technology Concept Airplane and design variations through computational analysis and experimental subsonic through supersonic wind tunnel testing. The Milestone will generate a comprehensive CFD and wind tunnel data base of the baseline, and design variations. Emphasis will be placed on establishing the propulsion induced effects on the flight performance of the Technology Concept Airplane with all appropriate wind tunnel corrections.

Cappuccio, Gelsomina↗
NASA NTRS1979

Accelerated life testing effects on CMOS microcircuit characteristics

Modifications and additions to the present process of making CMOS microcircuits which are designed to provide protective layers on the chip to guard against moisture and contaminants were investigated. High and low temperature Si3N4 protective layers were tested on the CMOS microcircuits and no conclusive improvements in device reliability characteristics were evidenced.

Source record↗