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At least 145 records · Page 8

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DOE OSTI2026

Ultra-low thermal resistance and pressure drop copper and copper-tungsten diamond-shaped pin fin cold plates for liquid cooling of electronics

Modern and future data centers face increasing cooling challenges due to increasing chip thermal design power and die size, along with the need to reduce energy consumption used for cooling. High performance cooling solutions that maintain a low chip junction temperature are needed to ensure electronics reliability. This work develops an ultra-low thermal resistance and low pressure drop 75 mm × 75 mm cold plate, intended for next-generation electronics cooling. The cold plate features an array of diamond-shaped pin fins and integrated copper tungsten heat spreader, selected for its low coefficient of thermal expansion which reduces thermomechanical deformation and allows for closer integration of the cold plate with silicon dies. Starting with 300 candidate designs, three-dimensional computational fluid dynamics simulations predict the thermal-hydraulic performance of cold plate subsections. The highest performing geometries are evaluated with high fidelity simulations. Four cold plates are manufactured for experiments: three with diamond-shaped pin fins and one with straights fins for comparison purposes. The cold plates are fabricated from copper-tungsten (CuW), copper (Cu), or aluminum-silicon-magnesium alloy (AlSi10Mg). The diamond-shaped pin fins achieve a roughly 15 % lower thermal resistance compared to the conventional straight fin microchannel. The highest performing design achieves a chip-to-coolant (including thermal interface material) thermal resistance of 9.0 K/kW in CuW and 6.9 K/kW in Cu under a 1 kW heat load with an inlet-to-outlet pressure drop of 9.0 kPa and water as the working fluid. This work demonstrates ultra-low thermal resistance and pressure drop cold plates for large die, high heat load applications, and shows that CuW is an attractive cold plate material for improved reliability in next generation data center cooling.

Coefficient of thermal expansion↗

NASA NTRS1973

Thick silicon growth techniques

Hall mobility measurements on a number of single crystal silicon ribbons grown from graphite dies have shown some ribbons to have mobilities consistent with their resistivities. The behavior of other ribbons appears to be explained by the introduction of impurities of the opposite sign. Growth of a small single crystal silicon ribbon has been achieved from a beryllia dia. Residual internal stresses of the order of 7 to 18,000 psi have been determined to exist in some silicon ribbon, particularly those grown at rates in excess of 1 in./min. Growth experiments have continued toward definition of a configuration and parameters to provide a reasonable yield of single crystal ribbons. High vacuum outgassing of graphite dies and evacuation and backfilling of growth chambers have provided significant improvements in surface quality of ribbons grown from graphite dies.

Bates, H. E.↗

NASA NTRS1974

Thick film silicon growth techniques

One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time.

Bates, H. E.↗

NASA NTRS1978

Transistor screening evaluation SJ6708H

A manufacturer was contracted to screen 125 transistors capable of withstanding the high level inductive voltages obtained when switching inductive loads. Planned differences included a change in die bonding to comply with NASA's desire for hard solder die attachment which further necessitated a change in package to conform to the required die mounting system. Evaluation of the electrical performance and recommended changes were made during the preliminary build phase of the program. The following sections are outlined: (1) narrative outline; (2) customer data summary and X-ray reports; (3) device specification; (4) failure analysis reports; (5) test facilities list; and (6) test measurement data.

Barton, J. L.↗

NASA NTRS1982

Selective Etching of Semiconductor Glassivation

Selective etching technique removes portions of glassivation on a semi-conductor die for failure analysis or repairs. A periodontal needle attached to a plastic syringe is moved by a microprobe. Syringe is filled with a glass etch. A drop of hexane and vacuum pump oil is placed on microcircuit die and hexane is allowed to evaporate leaving a thin film of oil. Microprobe brings needle into contact with area of die to be etched.

Casper, N.↗

NASA NTRS1986

Wrinkle-Free Hydroforming of Wire Mesh

Plastic films lubricate workpiece so it deforms smoothly. Thin layers of plastic below top die and above bottom die ensure wire screen slides as shaped by hydroforming. Plastic layers are 0.0043 in. (0.11 m) thick. Preformed to contours of dies and final workpiece. New method of hydroforming fine-wire-mesh heat-shield screens eliminates wrinkles and marks. Prevents screen from being damaged and pores from becoming blocked.

Fadness, J.↗

NASA NTRS1985

Ultrasonic angle beam standard reflector

A method that provides an impression profile in a reference standard material utilized in inspecting critically stressed components with pulsed ultrasound is described. A die stamp having an I letter is used to impress the surface of a reference material. The die stamp is placed against the surface and struck with an inertia imparting member to impress the I in the reference standard material. Upset may appear on the surface as a result of the impression and is removed to form a smooth surface. The stamping and upset removal is repeated until the entire surface area of a depth control platform on the die stamp uniformly contacts the material surface. The I impression profile in the reference standard material is utilized for reflecting pulsed ultrasonic beams for inspection purposes.

Berry, R. F., Jr.↗

NASA NTRS1986

A thermal-capillary mechanism for a growth rate limit in edge-defined film-fed growth of silicon sheets

Capillarity, acting to set the shape of the melt/gas interfaces, and heat transfer can interact to cause limits to steady-state growth of thin silicon sheets by the Edge-Defined Film-Fed Growth (EFG) method. A finite-element/Newton solution method for a two-dimensional thermal-capillary model of EFG is used to show that limiting values of pull rate exist beyond which steady-state growth is impossible. The pull rate limit is also predicted by a one-dimensional heat transfer model valid when the die sides and menisci are almost parallel and when the thermal conductivities of melt, crystal, and die are all equal. Both the one- and two-dimensional heat transfer models show that heat loss from the melt is dominated by conduction into the crystal and slow heat release to the ambient along the length of the ribbon. The limiting pull rate results from the reduced efficiency of conduction through the melt caused by the curvature of the meniscus which increases height of the die top above the level of the melt. Thermal-capillary limits are predicted for both positive and negative pressure differences across the meniscus.

Thomas, P. D.↗

NASA NTRS1987

Effect of treatment with interferon-gamma and concanavalin A on the course of infection of mice with Salmonella typhimurium strain LT-2

The effect of pretreatment of mice with 34 units/day, for five days, of interferon-gamma (IFN-gamma) on the course of infection with LD50 of Salmonella typhimurium strain LT-2 was assessed, using two IFN preparations: (1) a hybridoma supernatant fluid containing concanavalin-A-induced IFN-gamma activity and (2) pure murine IFN-gamma produced by recombinant DNA technology. The hybridoma supernatant-treated Salmonella-infected mice were found to die faster than mice treated only with Salmonella. Pure murine IFN-gamma was found to protect infected mice significantly, with 95 percent of mice surviving LD50 infection. In contrast, the Salmonella-infected mice treated with hybridoma supernatant were found to die faster than the Salmonella-infected untreated controls. Mice treated with concanavalin A alone prior to infection with S. typhimurium died more quickly than the untreated infected controls, suggesting that contamination with concanavalin A had a detrimental effect on mice survival.

Gould, Cheryl L.↗

NASA NTRS1993

Continuous fiber thermoplastic prepreg

A pultrusion machine employing a corrugated impregnator vessel to immerse multiple, continuous strand, fiber tow in an impregnating material, and an adjustable metered exit orifice for the impregnator vessel to control the quantity of impregnating material retained by the impregnated fibers, is provided. An adjustable height insert retains transverse rod elements within each depression of the corrugated vessel to maintain the individual fiber tows spread and in contact with the vessel bottom. A series of elongated heating dies, transversely disposed on the pultrusion machine and having flat heating surfaces with radiused edges, ensure adequate temperature exposed dwell time and exert adequate pressure on the impregnated fiber tows, to provide the desired thickness and fiber/resin ratio in the prepreg formed. The prepreg passing through the pulling mechanism is wound on a suitable take-up spool for subsequent use. A formula is derived for determining the cross sectional area opening of the metering device. A modification in the heating die system employs a heated nip roller in lieu of one of the pressure applying flat dies.

Wilson, Maywood L.↗

NASA NTRS1990

Corticosterone, but not Glucose, Treatment Enables Fasted Adrenalectomized Rats to Survive Moderate Hemorrhage

Fed adrenalectomized rats survive the stress of hemorrhage and hypovolemia, whereas fasted adrenalectomized rats become hypotensive and hypoglycemic after the first 90 min and die within 4 hours (h). We have studied the effects of glucose and corticosterone (B) infusions after hemorrhage as well as treatment with B at the time of adrenalectomy on the capacity of chronically prepared, conscious, fasted, adrenalectomized rats to survive hemorrhage. We have also measured the magnitudes of vasoactive hormone responses to hemorrhage. Maintenance of plasma glucose concentrations did not sustain life; however, treatment of rats at the time of adrenalectomy with B allowed 100 percent survival, and acute treatment of adrenalectomized rats at the time of hemorrhage allowed about 50 percent survival during the 5-h posthemorrhage observation period. Rats in the acute B infusion group that died exhibited significantly increased plasma B and significantly decreased plasma glucose concentrations by 2 h compared to the rats that lived. Plasma vasopressin, renin, and norepinephrine responses to hemorrhage were markedly augmented in the adrenalectomized rats not treated with B, and plasma vasopressin concentrations were significantly elevated at 1 and 2 h in all of the rats that subsequently died compared to values in those that lived. We conclude that: 1) death after hemorrhage in fasted adrenalectomized rats is not a result of lack of glucose; 2) chronic and, to an extent, acute treatment of fasted adrenalectomized rats with B enables survival; 3) fasted adrenalectomized rats exhibit strong evidence of hepatic insufficiency which is not apparent in either fed adrenalectomized rats or B-treated fasted adrenalectomized rats; 4) death after hemorrhage in fasted adrenalectomized rats may result from hepatic failure as a consequence of marked splanchnic vasoconstriction mediated bv the actions of extraordinarily high levels of vasoactive hormones after hemorrhage; and 5) B appears to act to decrease the magnitude of response of vasoactive hormones after hemorrhage in fasted adrenatectomized rats.

Darlington, Daniel N.↗

NASA NTRS2002

Systems Integration, Analysis and Modeling Support to the HEDS Technology/Commercialization Initiative (HTCI)

In response to a recommendation from OMB, NASA's Fiscal Year 2001 budget included a new program within the HEDS (Human Exploration and Development of Space) Enterprise called HEDS Technology/ Commercialization Initiative (HTCI). HTCI had three overarching goals: to support REDS analysis and planning for safe, affordable and effective future programs and projects that advance human exploration, scientific discovery, and the commercial development of space; to pursue research, development, and validation of breakthrough technologies and highly innovative systems concepts; and to advance die creation of strong partnerships within NASA, with U.S. industry and universities, and internationally. As part of its contracted effort, SAIC was to write a report contribution, describing die results of its task activities, to a final HTCI report prepared by MSFC. Unfortunately, government cancellation of the HTCI program in the summer of 2001 curtailed all efforts on the program including die Final HTCI report. In the absence of that report, SAIC has issued this final report in an attempt to document some of the technical material it produced. The report contains SAIC presentations for both HTCI workshops; a set of roadmap charts for the Systems Analysis, Integration and Modeling; and charts showing the evolution of the current TITAN modeling architecture.

Feingold, Harvey↗

NASA NTRS2003

Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems

A series of ceramic substrates and thick-film metalization-based prototype microsystem packages designed for silicon carbide (SiC) high-temperature microsystems have been developed for operation in 500 C harsh environments. These prototype packages were designed, fabricated, and assembled at the NASA Glenn Research Center. Both the electrical interconnection system and the die-attach scheme for this packaging system have been tested extensively at high temperatures. Printed circuit boards used to interconnect these chip-level packages and passive components also are being fabricated and tested. NASA space and aeronautical missions need harsh-environment, especially high-temperature, operable microsystems for probing the inner solar planets and for in situ monitoring and control of next-generation aeronautical engines. Various SiC high-temperature-operable microelectromechanical system (MEMS) sensors, actuators, and electronics have been demonstrated at temperatures as high as 600 C, but most of these devices were demonstrated only in the laboratory environment partially because systematic packaging technology for supporting these devices at temperatures of 500 C and beyond was not available. Thus, the development of a systematic high-temperature packaging technology is essential for both in situ testing and the commercialization of high-temperature SiC MEMS. Researchers at Glenn developed new prototype packages for high-temperature microsystems using ceramic substrates (aluminum nitride and 96- and 90-wt% aluminum oxides) and gold (Au) thick-film metalization. Packaging components, which include a thick-film metalization-based wirebond interconnection system and a low-electrical-resistance SiC die-attachment scheme, have been tested at temperatures up to 500 C. The interconnection system composed of Au thick-film printed wire and 1-mil Au wire bond was tested in 500 C oxidizing air with and without 50-mA direct current for over 5000 hr. The Au thick-film metalization-based wirebond electrical interconnection system was also tested in an extremely dynamic thermal environment to assess thermal reliability. The I-V curve1 of a SiC high-temperature diode was measured in oxidizing air at 500 C for 1000 hr to electrically test the Au thick-film material-based die-attach assembly.

Chen, Liang-Yu↗

NASA NTRS2010

Foil Gas Thrust Bearings for High-Speed Turbomachinery

A methodology has been developed for the design and construction of simple foil thrust bearings intended for parametric performance testing and low marginal costs, supporting continued development of oil-free turbomachinery. A bearing backing plate is first machined and surface-ground to produce flat and parallel faces. Partial-arc slots needed to retain the foil components are then machined into the plate by wire electrical discharge machining. Slot thicknesses achievable by a single wire pass are appropriate to accommodate the practical range of foil thicknesses, leaving a small clearance in this hinged joint to permit limited motion. The backing plate is constructed from a nickel-based superalloy (Inconel 718) to allow heat treatment of the entire assembled bearing, as well as to permit hightemperature operation. However, other dimensionally stable materials, such as precipitation-hardened stainless steel, can also be used for this component depending on application. The top and bump foil blanks are cut from stacks of annealed Inconel X-750 foil by the same EDM process. The bump foil has several azimuthal slits separating it into five individual bump strips. This configuration allows for variable bump spacing, which helps to accommodate the effects of the varying surface velocity, thermal crowning, centrifugal dishing, and misalignment. Rectangular tabs on the foil blanks fit into the backing plate slots. For this application, a rather traditional set of conventionally machined dies is selected, and bump foil blanks are pressed into the dies for forming. This arrangement produces a set of bump foil dies for foil thrust bearings that provide for relatively inexpensive fabrication of various bump configurations, and employing methods and features from the public domain.

Edmonds, Brian↗

NASA NTRS2010

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Celaya, Jose R.↗

NASA NTRS2014

AE (Acoustic Emission) for Flip-Chip CGA/FCBGA Defect Detection

C-mode scanning acoustic microscopy (C-SAM) is a nondestructive inspection technique that uses ultrasound to show the internal feature of a specimen. A very high or ultra-high-frequency ultrasound passes through a specimen to produce a visible acoustic microimage (AMI) of its inner features. As ultrasound travels into a specimen, the wave is absorbed, scattered or reflected. The response is highly sensitive to the elastic properties of the materials and is especially sensitive to air gaps. This specific characteristic makes AMI the preferred method for finding "air gaps" such as delamination, cracks, voids, and porosity. C-SAM analysis, which is a type of AMI, was widely used in the past for evaluation of plastic microelectronic circuits, especially for detecting delamination of direct die bonding. With the introduction of the flip-chip die attachment in a package; its use has been expanded to nondestructive characterization of the flip-chip solder bumps and underfill. Figure 1.1 compares visual and C-SAM inspection approaches for defect detection, especially for solder joint interconnections and hidden defects. C-SAM is specifically useful for package features like internal cracks and delamination. C-SAM not only allows for the visualization of the interior features, it has the ability to produce images on layer-by-layer basis. Visual inspection; however, is only superior to C-SAM for the exposed features including solder dewetting, microcracks, and contamination. Ideally, a combination of various inspection techniques - visual, optical and SEM microscopy, C-SAM, and X-ray - need to be performed in order to assure quality at part, package, and system levels. This reports presents evaluations performed on various advanced packages/assemblies, especially the flip-chip die version of ball grid array/column grid array (BGA/CGA) using C-SAM equipment. Both external and internal equipment was used for evaluation. The outside facility provided images of the key features that could be detected using the most advanced C-SAM equipment with a skilled operator. Investigation continued using in-house equipment with its limitations. For comparison, representative X-rays of the assemblies were also gathered to show key defect detection features of these non-destructive techniques. Key images gathered and compared are: Compared the images of 2D X-ray and C-SAM for a plastic LGA assembly showing features that could be detected by either NDE technique. For this specific case, X-ray was a clear winner. Evaluated flip-chip CGA and FCBGA assemblies with and without heat sink by C-SAM. Only the FCCGA package that had no heat sink could be fully analyzed for underfill and bump quality. Cross-sectional microscopy did not revealed peripheral delamination features detected by C-SAM. Analyzed a number of fine pitch PBGA assemblies by C-SAM. Even though the internal features of the package assemblies could be detected, C-SAM was unable to detect solder joint failure at either the package or board level. Twenty times touch ups by solder iron with 700degF tip temperature, each with about 5 second duration, did not induce defects to be detected by C-SAM images. Other techniques need to be considered to induce known defects for characterization. Given NASA's emphasis on the use of microelectronic packages and assemblies and quality assurance on workmanship defect detection, understanding key features of various inspection systems that detect defects in the early stages of package and assembly is critical to developing approaches that will minimize future failures. Additional specific, tailored non-destructive inspection approaches could enable low-risk insertion of these advanced electronic packages having hidden and fine features.

Ghaffarian, Reza↗

NASA NTRS2022

A Discussion of the Failure of a Quad Diode Module and Efforts to Assure the Flight Spares

In 2019 the International Space Station (ISS) experienced an on on-orbit failure that affected 1 of 28 Battery Charge Discharge Units (BCDUs). Telemetry pointed to a short circuit failure of a Power Rectifier Quad Diode Module. Astronauts removed the failed unit from service which was then returned to Earth for failure analysis. The failure analysis confirmed that the quad diode module had failed short circuit. The investigation identified silver dendrites had grown on the insulated, sloped edge of the mesa semiconductor die of the failed diode and also a 2nd diode in the same quad diode module. Voids between the diode’s protective encapsulating ring and the die provided space within which dendrites were able to form and cause catastrophic failure. The NASA Engineering & Safety Center (NESC) convened a EEE Parts Sub-Team to investigate root cause and to assist with risk assessment for all of the flight diode modules (4 distinct production lots) and the flight spares (from a 5th lot). Analysis of the original diode manufacturer’s read and record screening test data identified some lots which contained diodes with parametric instabilities that could signal conditions suited for silver dendrite formation. Computed Tomography (CT) X-ray screening inspection was performed on flight spare modules to identify diodes that do not exhibit voids between the edge of die and encapsulating ring as a mitigation against dendrite formation.

Jay Brusse↗

DOE OSTI2026

Influence of microstructure and temperature on impact toughness of H13 steel produced by binder jet additive manufacturing

Binder Jet Additive Manufacturing (BJAM) is a promising manufacturing pathway to produce H13 steel dies and tooling with complex geometries for applications in high pressure aluminum die casting, hot stamping, and injection molding. While fully dense H13 coupons produced using BJAM have been subjected to detailed microstructure characterization, properties which are critical and relevant to the aforementioned applications, such as impact toughness, have not been reported. Here, this work evaluated the influence of microstructural characteristics and test temperature on the impact toughness of H13 produced by BJAM. Coupons were produced from three different powder size distributions (PSDs), with nominal powder size ranges of −22 μm, 10-32 μm, and 15-53 μm. Coupons were printed, sintered, hot isostatically pressed (HIPed), and heat treated by quenching and tempering. After HIPing, the measured porosities of the different PSDs were all less than 0.015 vol%. The −22 μm PSD BJAM material exhibited the best impact toughness of all three PSDs across the entire test temperature range from 25 to 400 °C, and also exhibited an ambient temperature impact toughness of 10.9 J at a hardness of 46 HRC, equivalent to minimum threshold requirements for premium grade H13. However, all three BJAM PSDs exhibited moderately lower impact toughness than premium grade wrought H13 from RT to 400 °C. We attribute this in part due to the very large prior-austenite grain (PAG) sizes near 400 μm and segregation from former liquid channels leading to greater amounts of carbide precipitation on PAG boundaries. Technical pathways for optimizing processing and chemistry of BJAM H13 to further improve impact toughness are discussed.

Binder jet additive manufacturing↗