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At least 145 records · Page 8

Circuit Methods for VLF Antenna Couplers

The limitations of different E-field antenna coupler or preamplifier circuits are presented. All circuits were evaluated using actual Loran or Omega signals. Electric field whip or wire antennas are the simplest types which can be used for reception of VLF signals in the 10 to 100 kHz range. JFET or MOSFET transistors provide impedance transformation and some voltage gain in simple circuits where the power for operating the preamplifier uses the same coaxial cable that feeds the signal back to the receiver. The circuit techniques provide useful alternative methods for Loran-Omega receiver system designers.

Burhans, R. W.↗

A dc amplifier for nuclear particle measurement

A monolithic preamplifier-postamplifier combination has been developed for use with solid state particle detectors. The direct coupled amplifiers employ interdigitated n-channel JFET's, diodes, and diffused resistors. The circuits developed demonstrate the feasibility of matching the performance of existing discrete component designs. The fabrication procedures for the monolithic amplifier fabrication are presented and the results of measurements on a limited number of sample amplifiers are given.

Macnee, A. B.↗

Time-delay-and-integration charge coupled devices /CCDs/ applied to the Thematic Mapper

The visible focal plane of the Thematic Mapper, the next generation sensor system for application to earth resource survey, uses complex hybrid assembly techniques to interface silicon photodiodes to JFET preamplifiers. This complexity can be ameliorated by the use of a 20-channel time-delay-and-integration (TDI) CCD with nine stages of integration per channel. By going to a CCD array operating in a TDI mode, over 700 individual op amps can be replaced with only 48 op amps. Smooth spectral response and 70% quantum efficiency have been provided by using doped tin oxide gates over the imaging region.

Thompson, L. L.↗

High sensitivity operation of discrete solid state detectors at 4 K

Techniques are described to allow operation of discrete, solid state detectors at 4 K with optimized JFET amplifiers. Three detector types cover the 0.6 to 4 mm spectral range with NEP approximately equal to 10 to the 16th power Hz (-1/2) for two of the types and potential improvement to this performance for the third. Lower NEP's are anticipated at longer infrared wavelengths.

Rieke, G. H.↗

High sensitivity operation of discrete solid state detectors of 4 K

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4 micron spectral range with a noise equivalent power (NEP) of approximately 10 to the -16th per sq rt Hz for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

Rieke, G. H.↗

Simple cryogenic temperature regulator - The Zener diode

For obtaining optimum performance from cooled infrared detectors used in astronomy, it is often necessary to operate the preamplifier transistor (usually a JFET) at a higher temperature than that provided by the cryogen. Various means of elevating the temperature of the FET above the temperature of its environment are considered. A description is presented of a method which uses a 10 V Zener diode (actually an avalanche diode) as a self-stabilizing heater element. The diode is mounted in good thermal contact with the FET, and both are isolated from the work surface by a link of poor conductivity. The diode is driven by a stable, constant voltage power supply.

Storey, J. W. V.↗

Solid state microelectronics tolerant to radiation and high temperature

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Draper, B. L.↗

Evaluation of crystal oscillators and frequency dividers for high temperature operation

Active and passive components of crystal oscillators and frequency dividers were tested to determine their performance at temperatures from 300 C to 350 C. The properties of GaAs JFETs were determined and their performance compared with that of silicon devices. Techniques for constructing breadboard circuits were assessed for operation in this temperature range. A Pierce oscillator and a multivibrator (Colorado crystal) oscillator were constructed and tested. Device failures are discussed.

Source record↗

Error-Compensated Integrate and Hold

Differencing circuit cancels error caused by switching transistors capacitance. In integrate and hold circuit using JFET switch, gate-to-source capacitance causes error in output voltage. Differential connection cancels out error. Applications in systems where very low voltages sampled or many integrate-and -hold cycles before circuit is reset.

Matlin, M.↗

Advanced components for spaceborne infrared astronomy

The need for improved cryogenic components to be used in future spaceborne infrared astronomy missions was identified. Improved low noise cryogenic amplifiers operated with infrared detectors, and better cryogenic actuators and motors with extremely low power dissipation are needed. The feasibility of achieving technological breakthroughs in both of these areas was studied. An improved silicon junction field effect transistor (JFET) could be developed if: (1) high purity silicon; (2) optimum dopants; and (3) very high doping levels are used. The feasibility of a simple stepper motor equipped with superconducting coils is demonstrated by construction of such a device based on a standard commercial motor. It is found that useful levels of torque at immeasurably low power levels were achieved. It is concluded that with modest development and optimization efforts, significant performance gains is possible for both cryogenic preamplifiers and superconducting motors and actuators.

Davidson, A. W.↗

Long wavelength photoconductive detectors for airborne and orbital infrared astronomy

Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the system under low photon background conditions indicated that sensitivity was limited by the Johnson noise of the load resistor. The detectors were mounted in the Ames cooled grating spectrometer, and flown on the Kuiper Airborne Observatory. Good quality astronomical data were obtained during the flight of 7 July 1983.

Houck, J. R.↗

Cooled grating infrared spectrometer for astronomical observations

A liquid helium-cooled infrared spectrometer for the 16 to 50 micron range is described. The instrument has six detectors, three each of Si:Sb and Ge:Ga and two diffraction gratings mounted back-to-back. Cold preoptics are used to match the spectrometer to the telescope. In its nominal configuration the system resolution is 0.03 micron from 16 to 30 microns and 0.07 micron from 28 to 50 microns. A cooled filter wheel is used to change order sorting filters. The gratings are driven by a steel band and gear train operating at 4 K. The detector outputs are amplified by a TIA, employing a matched pair of JFETs operating at 70 K inside the dewar. The external warm electronics include a gain stage for the TIA and dc-coupled gating circuit to remove charged-particle (cosmic-ray secondary)-induced noise spikes. The gating circuit reduces the overall system noise by a factor of two when the spectrometer is used on NASA's Kuiper Airborne Observatory. Sample spectra are presented and the deglitcher performance is illustrated.

Houck, J. R.↗

Cryogenic telescope on the Infrared Astronomical Satellite (IRAS)

The Infrared Astronomical Satellite (IRAS) has completed an unbiased all-sky survey at wavelengths from 10 to 100 microns. The design and performance of the focal plane array is described with emphasis on in-orbit measurements of the sensitivity and stability. In the four broad spectral bands centered at 12, 25, 60, and 100 microns, the system noise equivalent flux density (NEFD) values are in Jy/(Square root of Hz), 0.03, 0.025, 0.046, and 0.21, respectively (Jansky = 10 to the -26th W/sq m/Hz). For point sources, a single scan at the survey rate of 3.8 arcmin/s yields limiting flux densities at the 3-sigma confidence level of 0.36, 0.30, 0.39, and 1.2 Jy. The dc stability of the junction field effect transistor (JFET) amplifiers and the excellent off-axis rejection of the telescope permit total flux measurements of extended infrared emission at levels below 6,000,000 Jy/sr. Response of the extrinsic silicon and germanium photo-detectors to ionizing radiation is described.

Low, F. J.↗

Infrared and visible detector electronics for the Infrared Astronomical Satellite (IRAS)

The paper describes the detectors, preamplifiers, and processing electronics; the system characterization test methods and results; and the performance of the detectors and electronics during the first month of on-orbit operation of the IRAS telescope. The Focal Plane Array (FPA) consists of 62 IR channels and 8 visible channels operating at 2.5 K. The IR detectors are grouped in eight 7 or 8 channel staggered linear subarrays with shared bias voltage; the visible detectors are grouped in two 4 channel skewed arrays, also with shared bias. Each channel detector is dc coupled to a TIA preamplifier through a very low power thermally isolated JFET source follower operating at about 65 K within the FPA housing. The visible channel detectors are ac coupled to TIA preamplifiers and signal chain electronics using MOSFET source followers operating at about 2.5 K within the FPA housing. The detectors, preamplifiers, analog electronics, and grounding are discussed as they evolved and were implemented during FPA retrofit, telescope integration, and preparation for launch.

Langford, D. L.↗

Ultra-low-noise, high-impedance preamp for cryogenic detectors

A relatively simple room-temperature preamp design that satisfies both the low-noise and wideband requirements for the InSb Putley-mode detector and which is based on a common-drain JFET input, is presented. The design has an input capacitance of 28 pf which is much less than comparably noisy common-source amplifiers. It can be used for preamplification of 0.1 to 10 MHz signals from liquid-helium-cooled radiation detectors.

Brown, E. R.↗

MIPS - The Multiband Imaging Photometer for SIRTF

The Multiband Imaging Photometer for SIRTF (MIPS) is to be designed to reach as closely as possible the fundamental sensitivity and angular resolution limits for SIRTF over the 3 to 700 micron spectral region. It will use high performance photoconductive detectors from 3 to 200 micron with integrating JFET amplifiers. From 200 to 700 microns, the MIPS will use a bolometer cooled by an adiabatic demagnetization refrigerator. Over much of its operating range, the MIPS will make possible observations at and beyond the conventional Rayleigh diffraction limit of angular resolution.

Rieke, G. H.↗

MIPS - The Multiband Imaging Photometer for SIRTF

The Multiband Imaging Photometer System (MIPS) for SIRTF is to be designed to reach as closely as possible the fundamental sensitivity and angular resolution limits for SIRTF over the 3 to 700 microns spectral region. It will use high performance photoconductive detectors from 3 to 200 microns with integrating JFET amplifiers. From 200 to 700 microns, the MIPS will use a bolometer cooled by an adiabatic demagnetization refrigerator. Over much of its operating range, the MIPS will make possible observations at and beyond the conventional Rayleigh diffraction limit of angular resolution.

Rieke, G. H.↗

Design and status of the detector block for the ISO-SWS

The Short Wave Spectrometer (SWS) is one of the two spectrometers for the Infrared Space Observatory (ISO). It consists of a pair of grating spectrometers and a Fabry-Perot interferometer. Together, the grating spectrometers cover the wavelength range 2.4 to 45 microns, at a resolution between 1000 and 2000. The Fabry-Perot interferometer, in series with one of the grating spectrometers, provides a resolution of about 20,000 at the wavelengths between 15 and 35 microns. The SWS is being built by the Space Research Organization of the Netherlands and the Max Planck Institute for Extraterrestrial Physics in Garching, Germany. The spectrometer has 52 discrete detectors, most of which are bulk detectors. In the design of the spectrometer, the main emphasis is on the sensitivity of the individual channels, rather than on the number of detectors. This was one of the main reasons to select non-destructive read-out circuits, with a separate heated-JFET pre-amplifier for each individual detector. The signals are amplified and filtered in parallel. The engineering tests on the SWS detector block have not yet been completed. The design of the detector block is described and the present problem areas are indicated.

Luinge, W.↗