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Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.
The formation of voids through interdiffusion in bimetallic welded structures exposed to high operating temperatures is inhibited by utilizing an alloy of the parent materials in the junction of the parent materials or by preannealing the junction at an ultrahigh temperature. These methods are also used to reduce the concentration gradient of a hardening agent.
The paper reports observation of doubly degenerate parametric amplification and oscillation at 36 GHz from a single point-contact Josephson junction. The experimental results agree qualitatively with theoretical calculations based on the resistively shunted junction model. The estimated noise temperature of an amplifier with 11 dB net gain is consistent with zero, but has an upper limit of 50 K. Attempts to observe parametric amplification in the singly degenerate mode with a pump frequency of 72 GHz were not successful.
Violet cells with 500-1000 A junction depths have been made in GaAs by narrow junction diffusion followed by anodization. The best AM0 efficiencies obtained by this technique have been 10.5% (14% at AM1). GaAlAs-GaAs structures with very thin GaAlAs layers are much more promising, and efficiencies of over 18% at AM0 have been measured (21.9% at AM1).
Free carrier and electric field distributions of one-dimensional semiconductor junctions are evaluated using a quantum mechanical phase-space distribution and its corresponding Boltzmann equation. Attention is given to quantum and exchange corrections in cases of high doping concentrations when carrier densities become degenerate. Quantitative differences between degenerate and classical junction characteristics, e.g., maximum electric field and built-in voltage and carrier concentration within the transition region, are evaluated numerically.
Numerical calculations are carried out on harmonic mixing with an externally pumped Josephson junction. Bias conditions for optimum conversion efficiency are studied for a variety of junction parameters. The predicted noise temperature for harmonic mixing is compared with that for fundamental mixing at the same signal frequency.
A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.
A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.
An improved oven for maintaining the junctions of a plurality of reference thermocouples at a common and constant temperature is described. The oven is characterized by a cylindrical body defining a heat sink with axially extended-cylindrical cavity a singularized heating element which comprises a unitary cylindrical heating element consisting of a resistance heating coil wound about the surface of metallic spool with an axial bore defined and seated in the cavity. Other features of the oven include an annular array of radially extended bores defined in the cylindrical body and a plurality of reference thermocouple junctions seated in the bores in uniformly spaced relation with the heating element, and a temperature sensing device seated in the axial bore for detecting temperature changes as they occur in the spool and circuit to apply a voltage across the coil in response to detected drops in temperatures of the spool.
New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.
Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.
The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.
A model applicable to normal metal tunnel junctions is presented. This model, referred to herein as the stationary state model, is an extension of the extended basis function theory of Kleinman and Duke (1972). Under the assumption that elastic tunneling is the dominant transport mechanism under static bias, the theory has been extended to include the case where there is an ac component of bias potential, and the fluctuation spectrum has been derived. In this approach structure eigenstates are used as the basis, allowing observables to be evaluated without recourse to the perturbation theory inherent in the transfer Hamiltonian model. Comparison is made to the appropriate results of the first order transfer Hamiltonian model, and it is found that there is close but not always exact agreement to lowest order in the tunneling exponential. The stationary state model should be accurate with large barrier transmission, as it includes all orders of the tunneling exponential. The model as presented here should be applicable to normal metal tunnel junctions, where elastic tunneling is the dominant transport mechanism (under static bias), up to infrared excitation frequencies.
The effect of 3-G conditions on the bone-to-ligament junctions of the knee is studied in rats. Results following chronic 3-G centrifugation of rats show that their bone-to-ligament junctions exhibited a force-sustaining capacity (F) which was 95 + or - 12% of the value for the control group. However, F was actually 29 + or - 5% greater for centrifuged rats than for control rats of comparable size, as the experimental animals grew to smaller body mass. It is concluded that gravity determines part of the magnitude of F, and therefore this value will probably be weaker after development in a weightless environment.
Computer analysis was used to determine the AMO conversion efficiency of single-junction crystalline cells, two-cell and three-cell crystalline tandem structures operating under 100 suns and at 80 C. For optimally designed devices, the calculated efficiencies are 24% for single-junction cells, 33 to 35% for two-cell tandem structures, and 37 to 39% for three-cell tandem structures. Practical efficiencies are expected to be about 15 relative percentage points lower in each case.
The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.
Concept for improving efficiency of photovoltaic solar cells based on decreasing p/n junction area in relation to total surface area of cell. Because of reduced junction area, surface leakage drops and saturation current density decreases. Surface passivation helps to ensure short-circuit current remains at high value and response of cells to blue light increases.
High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.