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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Investigation of failure mechanisms in integrated vacuum circuits

The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.

Rosengreen, A.↗
NASA NTRS1971

Damage and recovery characteristics of lithium-containing solar cells.

Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length damage coefficient after recovery were derived using results of short-circuit current, diffusion-length, and reverse-bias capacitance measurements. The damage coefficients were expressed in terms of a single lithium density parameter, the lithium gradient. A fluence dependence was also established, this dependence being the same for both the immediate-post-irradiation and post-recovery cases. Cell recovery rates were found to increase linearly with lithium gradient.

Faith, T. J.↗
NASA NTRS1972

Radiation damage effects by electrons, protons, and neutrons in Si/Li/ detectors.

The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.

Liu, Y. M.↗
NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗
NASA NTRS1977

Application of the SEM to the measurement of solar cell parameters

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗
NASA NTRS1977

Reconditioning experience at Marshall Space Flight Center

Problems encountered on Skylab prompted the development of a reconditioning circuit which involves a DC to DC converter, a circuit sensing device, and the capability of switching several size reconditioners onto a circuit. Across each cell there is a full bridge rectifier. During battery discharge, if there is low cell voltage, the reconditioning systems holds that voltage up and permits discharge to continue on the system. When the cell is good, the voltage is up about one volt, the diodes are back, or reversed biased, and the current drawn out of the system is very low. The system has a standby power thrown at about one volt. As the voltage drops on a cell, the circuit strts picking up the load and helps hold the overall battery voltage up.

Paschal, L. E.↗
NASA NTRS1980

JANTX1N3016B zener diode

Report evaluates effects of power and temperature overstress on Motorola and Siemens devices. Reverse bias leakage maximum limit failure and Zener-breakdown maximum limit failure were common. Other failures are described.

Source record↗
NASA NTRS1980

Asteroid rotation. III - 1978 observations

Photoelectric observations of 32 asteroids observed from Table Mountain Observatory during the second half of 1978 are reported. Rotation periods were obtained for most objects. Absolute magnitudes and phase functions were not determined for any of these asteroids. The geometric mean rotation period of the 32 asteroids observed is 14.2 + or - 1.6 hr, as compared to 9.38 + or - 0.35 hr for 182 asteroids analyzed in Harris and Burns (1979). This difference is attributed to an observational selection effect which favors detection of fast rotation. If this is true, then the present sample contains the reverse bias, since it is complete in that a period (in some cases very approximate) was obtained for each object observed, but fast rotators are underrepresented due to prior discovery of their rotation properties.

Harris, A. W.↗
NASA NTRS1981

Power transistor switching characterization

The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.

Blackburn, D. L.↗
NASA NTRS1981

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Berning, D.↗
NASA NTRS1982

On the reality of a boundary in the H-R diagram between late-type stars with and without high temperature outer atmospheres

The Linsky-Haisch hypothesis (1979) that a boundary exists in the H-R diagram separating yellow giants from red giants and supergiants is tested. IUE 1150-2000 A low-resolution spectra of 10 stars chosen to constitute a reverse bias sample are presented and discussed. Despite the bias, weak C IV emission indicative of high-temperature plasma was observed in four of the six stars chosen to be probable red stars, while no C IV emission was detected in the four stars chosen to be yellows. In a second test using the entire sample of 39 stars, nearly all of the yellow giants and supergiants were found to have an emission feature at 1549 A, which is attributed to C IV. The large magnitude dispersion could be attributed to temporal or spatial variability, differing magnetic field strengths and geometries, or age-related effects during post-main-sequence evolution. It is concluded that the Linsky-Haisch transition region boundary is a real phenomenon.

Simon, T.↗
NASA NTRS1981

Design, fabrication and performance of high efficiency photovoltaic modules

Design details and performance and environmental test results of newly developed high performance and reliability photovoltaic modules are presented. Efficiencies averaging 14.3% for 3040 cells were obtained by using ion implantation for cell junction and back surface field formation. 152 rectangular (6.0 cm x 4.6 cm) cells arranged with a 97% local packing density comprise the circuit assembly, and cells are wired 4 in parallel by 38 in series. The top cover of the superstrate design module is composed of tempered low-iron glass to provide transparent protection for the optical surface. Results show that this design has an encapsulation system which does not fail in the event of reverse-bias operation, and an average module efficiency of 12.2% was achieved at a 58.6W power which varied only 2% among all 20 modules.

Nowlan, M. J.↗
NASA NTRS1984

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗
NASA NTRS1984

Topics in the optimization of millimeter-wave mixers

This report is in three parts: 1. In the first part a user-oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140-220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. 2. The second part of this report describes a computer program for the analysis of varactor diode multipliers. The diode may operate in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. In addition, a design for a varactor diode doubler, tunable over an output frequency range of 150-220 GHz, is given. The doubler has 10-20% conversion efficiency with an instantaneous bandwidth of 3%. 3. The third section of this report contains a description and analysis of i new H-plane rectangular waveguide transformer. The transformer can be made luckily and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given, and good agreement is obtained with measurements made at X-band. Design curves are included for transitions which have a VSWR <1.2 over a full waveguide band when the impedance ratio is as high as 4 to 1.

Millimeter-wave↗
NASA NTRS1984

Performance measurement of low concentration ratio solar array for space application

The measured performance of a silicon and a gallium arsenide low concentration ratio solar array (LCRSA) element is presented. The element characteristics measured in natural sunlight are off pointing performance and response to mechanical distortions. Laboratory measurements of individual silicon and gallium-arsenide solar cell assemblies are also made. The characteristics measured in the laboratory involved responses to temperature and intensity variations as well as to the application of reverse bias potentials. The element design details covered include the materials, the solar cells, and the rationale for selecting these specific characteristics. The measured performance characteristics are contrasted with the predicted values for both laboratory testing and high altitude natural sunlight testing. Excellent agreement between analytical predictions and measured performance is observed.

Mills, M. W.↗
NASA NTRS1984

A new FET-bipolar combinational power semiconductor switch

A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.

Chen, D. Y.↗
NASA NTRS1984

Monolithically integrated array of GaAlAs electroabsorption modulators

The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.

Robinson, D. L.↗
NASA NTRS1987

Concentrator hot-spot testing, phase 1

Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator module hot-spot qualification test is the test developed for flat-plate modules, issues, such as providing cell illumination, introduce additional complexities into the testing procedure. The same general guidelines apply for protecting concentrator modules from hot-spot stressing as apply to flat-plate modules. Therefore, recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. In addition, a new method for determining the cell temperature in the laboratory or in the field is discussed.

Gonzalez, C. C.↗