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Results for “CIRCUIT RELIABILITY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗
NASA NTRS1977

Parylene coating for circuit components

Inexpensive internal coating improves reliability of plastic-packaged parts. Coating protects device from effects of humidity and heat and acts as barrier between device and harmful substances generated by plastic-packaging material.

Berkebile, M. J.↗
NASA NTRS1980

Propulsion controls

Increased system requirements and functional integration with the aircraft have placed an increased demand on control system capability and reliability. To provide these at an affordable cost and weight and because of the rapid advances in electronic technology, hydromechanical systems are being phased out in favor of digital electronic systems. The transition is expected to be orderly from electronic trimming of hydromechanical controls to full authority digital electronic control. Future propulsion system controls will be highly reliable full authority digital electronic with selected component and circuit redundancy to provide the required safety and reliability. Redundancy may include a complete backup control of a different technology for single engine applications. The propulsion control will be required to communicate rapidly with the various flight and fire control avionics as part of an integrated control concept.

Harkney, R. D.↗
NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗
NASA NTRS1992

Toward Agent Programs with Circuit Semantics

New ideas are presented for computing and organizing actions for autonomous agents in dynamic environments-environments in which the agent's current situation cannot always be accurately discerned and in which the effects of actions cannot always be reliably predicted. The notion of 'circuit semantics' for programs based on 'teleo-reactive trees' is introduced. Program execution builds a combinational circuit which receives sensory inputs and controls actions. These formalisms embody a high degree of inherent conditionality and thus yield programs that are suitably reactive to their environments. At the same time, the actions computed by the programs are guided by the overall goals of the agent. The paper also speculates about how programs using these ideas could be automatically generated by artificial intelligence planning systems and adapted by learning methods.

ELECTRICAL CIRCUITS↗
NASA NTRS2015

The NASA Electronic Parts and Packaging (NEPP) Program: Overview and the New Tenets for Cost Conscious Mission Assurance on Electrical, Electronic, and Electromechanical (EEE) Parts

The NEPP Program focuses on the reliability aspects of electronic devices (integrated circuits such as a processor in a computer). There are three principal aspects of this reliability: 1) Lifetime, inherent failure and design issues related to the EEE parts technology and packaging; 2) Effects of space radiation and the space environment on these technologies, and; 3) Creation and maintenance of the assurance support infrastructure required for mission success. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment, and to ensure that appropriate EEE parts research is performed to meet NASA mission assurance needs. NEPPs FY15 goals are to represent the NASA voice to the greater aerospace EEE parts community including supporting anti-counterfeit and trust, provide relevant guidance to cost-effective missions, aid insertion of advanced (and commercial) technologies, resolve unexpected parts issues, ensure access to appropriate radiation test facilities, and collaborate as widely as possible with external entities. In accordance with the changing mission profiles throughout NASA, the NEPP Program has developed a balanced portfolio of efforts to provide agency-wide assurance for not only traditional spacecraft developments, but also those in-line with the new philosophies emerging worldwide. In this presentation, we shall present an overview of this program and considerations for EEE parts assurance as applied to cost conscious missions.

space radiation↗
NASA NTRS1973

Ferrite logic reliability study

Development and use of digital circuits called all-magnetic logic are reported. In these circuits the magnetic elements and their windings comprise the active circuit devices in the logic portion of a system. The ferrite logic device belongs to the all-magnetic class of logic circuits. The FLO device is novel in that it makes use of a dual or bimaterial ferrite composition in one physical ceramic body. This bimaterial feature, coupled with its potential for relatively high speed operation, makes it attractive for high reliability applications. (Maximum speed of operation approximately 50 kHz.)

Baer, J. A.↗
NASA NTRS1986

Voltage Regulators for Photovoltaic Systems

Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

Delombard, R.↗
NASA NTRS1973

Advanced On-Board Processor (AOP)

Advanced On-board Processor the (AOP) uses large scale integration throughout and is the most advanced space qualified computer of its class in existence today. It was designed to satisfy most spacecraft requirements which are anticipated over the next several years. The AOP design utilizes custom metallized multigate arrays (CMMA) which have been designed specifically for this computer. This approach provides the most efficient use of circuits, reduces volume, weight, assembly costs and provides for a significant increase in reliability by the significant reduction in conventional circuit interconnections. The required 69 CMMA packages are assembled on a single multilayer printed circuit board which together with associated connectors constitutes the complete AOP. This approach also reduces conventional interconnections thus further reducing weight, volume and assembly costs.

Source record↗
NASA NTRS1976

Accelerated test techniques for micro-circuits: Evaluation of high temperature (473 k - 573 K) accelerated life test techniques as effective microcircuit screening methods

The application of high temperature accelerated test techniques was shown to be an effective method of microcircuit defect screening. Comprehensive microcircuit evaluations and a series of high temperature (473 K to 573 K) life tests demonstrated that a freak or early failure population of surface contaminated devices could be completely screened in thirty two hours of test at an ambient temperature of 523 K. Equivalent screening at 398 K, as prescribed by current Military and NASA specifications, would have required in excess of 1,500 hours of test. All testing was accomplished with a Texas Instruments' 54L10, low power triple-3 input NAND gate manufactured with a titanium- tungsten (Ti-W), Gold (Au) metallization system. A number of design and/or manufacturing anomalies were also noted with the Ti-W, Au metallization system. Further study of the exact nature and cause(s) of these anomalies is recommended prior to the use of microcircuits with Ti-W, Au metallization in long life/high reliability applications. Photomicrographs of tested circuits are included.

Johnson, G. M.↗
NASA NTRS1970

High temperature circuit breaker

Alternating current circuit breaker is suitable for reliable long-term service at 1000 deg F in the vacuum conditions of outer space. Construction materials are resistant to nuclear radiation and vacuum welding. Service test conditions and results are given.

Edwards, R. N.↗
NASA NTRS1973

Glass encapsulation provides extra protection for IC semiconductor devices

Oxide-passivated semiconductor chip is given protective glass coating by means of vapor deposition over metallic substrate of integrated circuit (IC). Method provides more reliable oxide-passivation and hermetic sealing in current use. Chips and scratches incurred during dicing, testing, and assembly are markedly reduced.

Doelp, W. L., Jr.↗
NASA NTRS1972

Development of ferrite logic devices for an arithmetic processor

A number of fundamentally ultra-reliable, all-magnetic logic circuits are developed using as a basis a single element ferrite structure wired as a logic delay element. By making minor additions or changes to the basic wiring pattern of the delay element other logic functions such as OR, AND, NEGATION, MAJORITY, EXCLUSIVE-OR, and FAN-OUT are developed. These logic functions are then used in the design of a full-adder, a set/reset flip-flop, and an edge detector. As a demonstration of the utility of all the developed devices, an 8-bit, all-magnetic, logic arithmetic unit capable of controlled addition, subtraction, and multiplication is designed. A new basic ferrite logic element and associated complementary logic scheme with the potential of improved performance is also described. Finally, an improved batch process for fabricating joint-free power drive and logic interconnect conductors for this basic class of all-magnetic logic is presented.

Heckler, C. H., Jr.↗
NASA NTRS1975

Development of beam lead RF integrated circuits

This paper describes the design and development of a set of multifunction VHF/UHF integrated circuits aimed at providing a major improvement in spacecraft radio reliability through low stress operation and the processing of these circuits in beam-lead form. The methods evolved for the high frequency characterization of the devices are discussed together with the design of suitable test fixtures. Typical test results and the distribution of test parameters are presented. A unique carrier for beam-lead devices is described, and the need for such a device is discussed. The application of the carrier to device screening, burn-in and drift measurements is discussed together with the incentives for providing these capabilities. An overview of the integration of the devices into the spacecraft radio is given and candidate assembly processes are discussed. The technology impact of this approach upon future spacecraft radio systems is qualitatively examined.

Kline, A. J.↗
NASA NTRS1978

Multilevel metallization method for fabricating a metal oxide semiconductor device

An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.

Hollis, B. R., Jr.↗
NASA NTRS1977

Non-parametric PCM to ADM conversion

An all-digital technique to convert pulse code modulated (PCM) signals into adaptive delta modulation (ADM) format is presented. The converter developed is shown to be independent of the statistical parameters of the encoded signal and can be constructed with only standard digital hardware. The structure of the converter is simple enough to be fabricated on a large scale integrated circuit where the advantages of reliability and cost can be optimized. A concise evaluation of this PCM to ADM translation technique is presented and several converters are simulated on a digital computer. A family of performance curves is given which displays the signal-to-noise ratio for sinusoidal test signals subjected to the conversion process, as a function of input signal power for several ratios of ADM rate to Nyquist rate.

Locicero, J. L.↗
NASA NTRS2001

Low Temperature Testing of a Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital (A/D) Converter

Power processing electronic systems, data acquiring probes, and signal conditioning circuits are required to operate reliably under harsh environments in many of NASA:s missions. The environment of the space mission as well as the operational requirements of some of the electronic systems, such as infrared-based satellite or telescopic observation stations where cryogenics are involved, dictate the utilization of electronics that can operate efficiently and reliably at low temperatures. In this work, radiation-hard CMOS 8-bit flash A/D converters were characterized in terms of voltage conversion and offset in the temperature range of +25 to -190 C. Static and dynamic supply currents, ladder resistance, and gain and offset errors were also obtained in the temperature range of +125 to -190 C. The effect of thermal cycling on these properties for a total of ten cycles between +80 and - 150 C was also determined. The experimental procedure along with the data obtained are reported and discussed in this paper.

Gerber, Scott S.↗