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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wound Field and Hybrid Synchronous Machines for EV Traction with Brushless Capacitive Rotor Field Excitation (Final Report)

This project focused on the development of wound field synchronous machines (WFSMs) and hybrid excitation synchronous machines (HESMs) with brushless capacitive power transfer for the field excitation. The target application for the machines developed is the main traction motor in electric vehicles. The magnetization in these types of machines is provided by a field winding on the rotor which is excited with DC current. The magnetization level in the machine can be varied by changing the magnitude of the field current. The variable magnetization or field is one of the key features of WFSMs. WFSMs are commonly used as generators however they have several attractive features for automotive traction applications. 1) No use of permanent magnet: Rare earth permanent magnets are primarily mined and processed in China. They have been subject to large price and supply variations and their export may be restricted during times of geopolitical tension. 2) Easy field weakening: Wound field synchronous machines have complete control of their field excitation. With proper design, this type of machine can electromagnetically have an infinite constant power speed range. 3) High power factor: With proper choice of the field excitation, WFSMs may be operated with high or even unity power factor. This potentially allows for the inverter connected to the stator winding to be downsized. In comparison induction machines and interior permanent magnet synchronous machines must supply reactive power to the stator increasing the kVA rating and cost of the inverter. 4) Reduced iron losses at high speed: By reducing the field excitation, the iron loss in the stator can be reduced. This is in comparison to interior permanent magnet synchronous machines which must use stator current to buck or reduce the flux produced by the permanent magnets. Generally, WFSMs have their highest efficiency at high speed. 5) Torque output at high temperatures: The magnetization provided by the field winding only depends on the field current and not on the field winding temperature. This is in contrast to permanent magnet machines where the permanent magnet flux decreases as the magnet temperature increases. Historically a number of approaches have been developed to provide DC current to the rotating field winding in WFSM’s including brushes and slip rings, low frequency brushless exciters, and high frequency rotary transformers and rectifiers. In this project, a different approach was used: brushless capacitive power transfer. Brushless capacitive power transfer uses two sets of rotating capacitors or electrodes in which an AC electric field is established by a high frequency inverter. A displacement current can flow through the airgap in the rotating capacitors which is rectified on the rotor using a diode bridge. The potential advantage of capacitive power transfer is that there is no need for heavy iron to guide magnetic flux. The electric flux lines terminate on the charges on the rotary capacitor surfaces. This should also limit the electric field outside the rotary capacitor airgaps. The main challenge with capacitive power transfer is that the capacitance and surface area of the rotating capacitors is small. Because capacitive power transfer systems are essentially a dual of a magnetic system, an Ampere per Hertz relationship is characteristic versus a Volts per Hertz relationship. A very high frequency power inverter must be used to provide sufficient excitation to the field winding. The concept of using capacitive power transfer to excite a high performance WFSM was initially developed in a previous U.S.A. Dept. of Energy project, DE-EE0006829. This project focused on increasing the power density of the WFSMs and reducing the cost and manufacturing complexity of the capacitive power transfer system. This project has demonstrated that WFSMs with brushless capacitive field power transfer can provide a high-power density and low-cost automotive powertrain technology.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

High-Density Capacitive Energy Storage in Low-Dielectric-Constant Polymer PMMA/2D Mica Nanofillers Heterostructure Composite

The ubiquitous, rising demand for energy storage devices with ultra-high storage capacity and efficiency has drawn tremendous research interest in developing energy storage devices. Dielectric polymers are one of the most suitable materials used to fabricate electrostatic capacitive energy storage devices with thin-film geometry with high power density. In this work, we studied the dielectric properties, electric polarization, and energy density of PMMA/2D Mica nanocomposite capacitors where stratified 2D nanofillers are interfaced between the multiple layers of PMMA thin films using two heterostructure designs of the capacitors, PMMA/2D Mica/PMMA (PMP) and PMMA/2D Mica/PMMA/2D Mica/PMMA (PMPMP). The incorporation of a 2D Mica nanofiller in the low-dielectric-constant PMMA leads to an enhancement in the dielectric constant, with ∆ε ~ 15% and 53% for PMP and PMPMP heterostructures at room temperature. Additionally, a significant improvement in discharged energy density was measured for the PMPMP capacitor (Ud ~ 38 J/cm3 at 825 MV/m) compared to the pristine PMMA (Ud ~ 9.5 J/cm3 at 522 MV/m) and PMP capacitors (Ud ~ 19 J/cm3 at 740 MV/m). This excellent capacitive and energy storage performance of the PMMA/2D Mica heterostructure nanocomposite may inform the fabrication of thin-film, high-density energy storage capacitor devices for potential applications in various platforms.

Biochemistry & Molecular Biology↗
DOE OSTI2021

Supply voltage decoupling circuits for voltage droop mitigation

Circuits and methods are provided for utilizing decoupling capacitors to mitigate voltage droop on power supply lines of a power distribution network. A power supply line is capacitively decoupled using a first decoupling capacitor connected to the power supply line and charged to a first voltage level of the power supply line. A second decoupling capacitor is pre-charged to a second voltage level greater than the first voltage level and held in standby. A control circuit determines or predicts an occurrence of a droop event in which the first voltage decreases to a level which is at or below a droop threshold voltage level, and selectively connects the pre-charged second decoupling capacitor to the power supply line to source additional boosting current through discharging of the second decoupling capacitor and thereby capacitively decouple the power supply line using the higher second voltage and additional boosting current.

Zhang, Xin↗
DOE OSTI2024

Pulse generator

A pulse shaping device includes an inductor that is selectively output-coupled to a first port of a capacitor. The inductor is charged to a selected current throughput and then coupled to the first port to generate a first characteristic within the current flowing at a second port of the capacitor. The capacitor is charged until reaching a clamping voltage at the first port. A voltage clamp of the shaping device clamps the first port of the capacitor at the clamping voltage to generate a second characteristic within the current flowing at a second port of the capacitor.

Zan, Xin↗
DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy

We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode utilizes two ammeters instead of one as commonly employed in the classical total electron yield scheme to measure photocurrents of devices under soft x-ray irradiation. The advantage of this configuration over the surface sensitive classical total electron yield mode is that it can provide information from buried layers and interfaces up to a thickness equal to the penetration depth of soft x-rays. The method can be easily adapted to existing synchrotron end stations. We investigate dielectric capacitors with dissimilar electrodes to assess the feasibility of the modified total electron yield method. Furthermore, in operando soft x-ray absorption spectroscopy measurements are performed on ferroelectric capacitors under bias and using two ammeters. The experimental results are discussed in terms of the external and internal photoemission processes and their distribution in thin film capacitors under an external bias condition. The proposed detection method opens the way to perform electronic and chemical state analyses of the buried interfaces and layers in various devices like multiferroic tunnel junctions, memristive devices, etc., during operation under an applied bias.

Kröger, E.↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Noise Optimization for MKIDs with Different Design Geometries and Material Selections

The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.

generation-recombination noise↗
DOE OSTI2025

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗
DOE OSTI2022

Electrostatic energy harvester

An electrostatic energy harvester broadly comprises an electrical energy storage component, an electrical energy transfer stage, first and second variable capacitors, and a switching control module. The electrical energy transfer stage includes diode-connected transistors and dictates electrical energy transfer between the electrical energy storage component and the variable capacitors. The switching control module timely switches between the first and second variable capacitors according to a state machine. Subsequent electrical energy investments from the electrical energy storage component are less than an initial electrical energy investment due to remnant electrical energy remaining at the previously active one of the first and second variable capacitors from previous electrical energy harvesting.

Wilson, Amy Charlene↗
DOE OSTI2022

Electrostatic energy harvester

An electrostatic energy harvester broadly comprises an electrical energy storage component, an electrical energy transfer stage, first and second variable capacitors, and a switching control module. The electrical energy transfer stage includes diode-connected transistors and dictates electrical energy transfer between the electrical energy storage component and the variable capacitors. The switching control module timely switches between the first and second variable capacitors according to a state machine. Subsequent electrical energy investments from the electrical energy storage component are less than an initial electrical energy investment due to remnant electrical energy remaining at the previously active one of the first and second variable capacitors from previous electrical energy harvesting.

Wilson, Amy Charlene↗
DOE OSTI2022

Electrostatic energy harvester

An electrostatic energy harvester broadly comprises an electrical energy storage component, an electrical energy transfer stage, first and second variable capacitors, and a switching control module. The electrical energy transfer stage includes diode-connected transistors and dictates electrical energy transfer between the electrical energy storage component and the variable capacitors. The switching control module timely switches between the first and second variable capacitors according to a state machine. Subsequent electrical energy investments from the electrical energy storage component are less than an initial electrical energy investment due to remnant electrical energy remaining at the previously active one of the first and second variable capacitors from previous electrical energy harvesting.

Wilson, Amy Charlene↗
DOE OSTI2023

System and method of inverter control

A control system and method for an inverter that reduces capacitor current through a DC bus capacitor of the inverter. The control system and method may generate switching signals for a plurality of switching circuits in a manner that reduces capacitor current through the DC bus capacitor.

Xue, Lingxiao↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Diagnosing electric and magnetic fields in laser-driven coil targets

Laser-driven capacitor coils are widely used to generate intense magnetic fields for various applications in high-energy-density (HED) physics research. Accurate measurement of the magnetic fields is essential but challenging, due to the overlapping contributions from magnetic and electric fields in proton radiography, which is the primary tool diagnosing the field generation around the coils. In this study, we systematically analyze proton radiographs obtained from laser-driven capacitor-coil targets along two orthogonal axes under various electromagnetic field conditions, including magnetic field only, electric field only, and combined electromagnetic fields. By analyzing key features in the radiographs, we distinguish and characterize the respective contributions from magnetic and electric fields. Using detailed simulations validated by experimental benchmarks, methods to isolate and quantify the magnetic field and electric field are given. The methods are successfully applied to determine the electric current and charge distribution in a double coil configuration. Our findings provide insights into improving the diagnostic capability of proton radiography, potentially leading to more accurate measurements of electromagnetic fields and enhancing the utility of laser-driven capacitor coils in HED experiments.

electromagnetic field diagnostics↗
DOE OSTI2021

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗