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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Measurements of displacement cross sections of metals for 120-GeV proton beam irradiation

The number of displacements per atom (dpa) is widely used as an indicator of irradiation damage of materials in proton accelerator facilities. Experiments have been carried out to validate the dpa of metallic materials for protons with energies below 3 GeV. However, measurements of the displacement cross-sections for high-energy protons above 3 GeV have not been carried out and the calculations have not been validated. To validate the displacement cross section of metals in high-energy region, electrical resistivity changes in wires of aluminum, copper and tungsten at 8 K were measured using protons with energies of 120-GeV. The results show that the Norgett-Robinson-Torrens dpa model of the Particle and Heavy Ion Transport Calculation Code overestimates the experimental data. On the other hand, the calculated results using the athermal recombination corrected dpa model were in agreement with the measured displacement cross sections. In the proton energy region above 1 GeV, the displacement cross section is almost constant, which is due to the fact that the damage energy of the material under 1 GeV proton irradiation is almost the same as under 120 GeV proton irradiation. Damage recovery of defects accumulated in the sample was also measured using isochronal annealing: At 80 K, approximately 60 % and 80 % of the damage remains for copper and tungsten, respectively. These results are the same as those obtained from other experiments on proton and neutron irradiation.

43 PARTICLE ACCELERATORS↗
NASA NTRS1991

The effects of electron and proton radiation on GaSb infrared solar cells

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

Gruenbaum, P. E.↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1992

Track structure model for damage to mammalian cell cultures during solar proton events

Solar proton events (SPEs) occur infrequently and unpredictably, thus representing a potential hazard to interplanetary space missions. Biological damage from SPEs will be produced principally through secondary electron production in tissue, including important contributions due to delta rays from nuclear reaction products. We review methods for estimating the biological effectiveness of SPEs using a high energy proton model and the parametric cellular track model. Results of the model are presented for several of the historically largest flares using typical levels and body shielding.

Cucinotta, F. A.↗
NASA NTRS2009

Altered Gene Expressions and Cytogenetic Repair Efficiency in Cells with Suppressed Expression of XPA after Proton Exposure

Cellular responses to damages from ionizing radiation (IR) exposure are influenced not only by the genes involved in DNA double strand break (DSB) repair, but also by non- DSB repair genes. We demonstrated previously that suppressed expression of several non-DSB repair genes, such as XPA, elevated IR-induced cytogenetic damages. In the present study, we exposed human fibroblasts that were treated with control or XPA targeting siRNA to 250 MeV protons (0 to 4 Gy), and analyzed chromosome aberrations and expressions of genes involved in DNA repair. As expected, after proton irradiation, cells with suppressed expression of XPA showed a significantly elevated frequency of chromosome aberrations compared with control siRNA treated (CS) cells. Protons caused more severe DNA damages in XPA knock-down cells, as 36% cells contained multiple aberrations compared to 25% in CS cells after 4Gy proton irradiation. Comparison of gene expressions using the real-time PCR array technique revealed that expressions of p53 and its regulated genes in irradiated XPA suppressed cells were altered similarly as in CS cells, suggesting that the impairment of IR induced DNA repair in XPA suppressed cells is p53-independent. Except for XPA, which was more than 2 fold down regulated in XPA suppressed cells, several other DNA damage sensing and repair genes (GTSE1, RBBP8, RAD51, UNG and XRCC2) were shown a more than 1.5 fold difference between XPA knock-down cells and CS cells after proton exposure. The possible involvement of these genes in the impairment of DNA repair in XPA suppressed cells will be further investigated.

Zhang, Ye↗
NASA NTRS2018

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Sun, Xiaoli↗
NASA NTRS2018

The Probability of False Go/No-Go Determined by GOES Proton Flux: Proposed Launch Constraints for Avoiding Damaging Solar Energetic Particle Events

Most space-bound hardware needs to be designed to withstand space weather events to some degree. Long-term predictability of space weather events, such as solar flares or coronal mass ejections, are still a matter of theory so designers should assume a worst case event for their specific environment. In our analysis, we show preliminary results of the probability of encountering a false/true go/no-go based on a threshold launch and design proton environment. The goal in choosing a threshold launch environment is to avoid the chance of exceeding the design environment during vulnerable parts of the mission. Operationally, this method cannot predict damaging space weather but can aid in avoiding space weather events that are already occurring. The GOES (Geostationary Operational Environmental Satellite) proton flux database is used as a proxy for the heavy ion fluxes, which impart a greater threat because of larger single event upsets and effects. Our use of protons as a proxy for heavy ions is justified on the basis of the correlation between their fluxes shown by a qualitative comparison of GOES proton integral fluxes at greater than 10 megaelectronvolts and ACE/SIS (Advanced Composition Explorer / Solar Isotope Spectrometer) heavy ion integral fluxes.

DeStefano, Anthony M.↗
DOE OSTI2026

X-ray characterization of fully-depleted p-channel Skipper-CCDs for the DarkNESS mission

The Dark matter Nanosatellite Equipped with Skipper Sensors (DarkNESS) mission is a 6U CubeSat designed to search for X-ray lines from decaying dark matter using Skipper-CCDs. Thick, fully-depleted p-channel Skipper-CCDs provide low readout noise and high quantum efficiency for 1-10 keV X-rays, but their X-ray performance has not yet been demonstrated in the space environment. DarkNESS will operate in low-Earth orbit, where trapped protons induce displacement damage in the sensor that increases charge-transfer inefficiency and degrades the X-ray energy resolution. This work measures the X-ray line response of Skipper-CCDs before and after proton irradiation and quantifies the associated degradation. A sensor was exposed to 217 MeV protons at a fluence of 8.4 x 10^10 protons cm^-2, corresponding to a displacement-damage dose more than an order of magnitude above the three-year expectation for representative mid-inclination and Sun-synchronous low-Earth orbits. A 55Fe source was used to compare the energy resolution of the beam-exposed quadrant to adjacent unexposed quadrants and a non-irradiated reference sensor. These measurements provide a quantitative assessment of radiation-induced spectral degradation in Skipper-CCDs and enable an estimate of the end-of-life X-ray energy resolution expected for DarkNESS operation in low-Earth orbit.

Alpine, Phoenix [Illinois U., Urbana] (ORCID:00090↗
NASA NTRS1997

TOPEX/Poseidon Radiation Issues: Displacement Damage in Optocouplers

In this paper we describe observed failures of optocouplers on the TOPEX/Poseidon (T/P) ocean measuring satellite. An indirect assessment is made of proton doses by the spacecraft, and these data are compared with laboratory proton irradiations of optocouplers. It is shown that the T/P failures occur at expected doses for proton-induced displacement damage.

optocouplers TOPEX Poseidon↗
NASA NTRS2014

Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

Single Event Effects↗
NASA NTRS2018

The Probability of False Go/No-Go Determined by GOES Proton Flux: Proposed Launch Constraints for Avoiding Damaging Solar Energetic Particle Events

The space environment is full of harmful radiation and high energy particles that can cause damage to materials and affect computer systems by e.g., single event effects (SEEs), total ionizing dose (TID), etc. There are three main sources of high energy particles: Trapped radiation in Earth's Van Allen belts (electrons and protons); Solar energetic particles (SEPs) (protons and heavy ions); Galactic cosmic rays (GCRs) (protons and heavy ions). In this study, we focus on the SEPs and their time series and energy spectrum to quantify probabilities of launch go/no-go. The SEPs originate from solar particle events (SPEs) that are associated with a solar flare and/or a coronal mass ejection (CME). These events are difficult to predict. Recent work has been done on these prediction techniques. The Geostarionary Operational Environmental Satellite (GOES) has been observing SEPs for decades. The greater than 10 megaelectronvolt proton flux is shown in Figure 2 since 1986. The SEPs are influenced by the 11-year solar cycle and typically come from active regions on the Sun.

DeStefano, Anthony M.↗
NASA NTRS2003

Displacement damage characterization of laser diodes

Displacement damage effects from protons and neutrons are compared. Differences in the annealing properties were observed which are due to the different microscopic structure of the damaged regions from the two ty pes of particles.

Miyahira, T. F.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗