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NASA NTRS2016

Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 C

Prolonged 500 degrees Celsius to 700 degrees Celsius electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability limits of the present version of NASA Glenn's extreme temperature microelectronics technology. The results of this study support the hypothesis that T ≥ 500 degrees Celsius durability-limiting IC failure initiates with thermal-stress-related crack formation where dielectric passivation layers overcoat micron-scale vertical features including patterned metal traces.

high temperature↗

NASA NTRS2023

Broadband and Wide Angle Nonreciprocal Thermal Emission from Weyl Semimetal Structures

Nonreciprocal thermal emission is a cutting-edge technology that enables fundamental control over thermal radiation and has exciting applications in thermal energy harvesting. However, so far one of the foremost challenges is making nonreciprocal emission to operate over a broad wavelength range and for multiple angles. In this work, we solve this outstanding problem by proposing three different types of structures always utilizing only one Weyl semimetal (WSM) thin film combined with one or two additional dielectric or metallic layers and terminated by a metallic substrate. First a tradeoff relationship between the magnitude and bandwidth of the thermal nonreciprocity contrast is established based on the thickness of the WSM film. Then, the bandwidth broadening effect is demonstrated via the insertion of a dielectric spacer layer that can also be fine-tuned by varying its thickness. Finally, further control on the resulting strong nonreciprocal thermal radiation is demonstrated by the addition of a thin metallic layer in the proposed few layer designs. The presented composite structures work for a broad frequency range and multiple emission angles, consisting highly advantageous properties to various nonreciprocal thermal radiation applications. Moreover, the proposed designs do not require any patterning and can be experimentally realized by simple deposition fabrication methods. They are expected to aid in the creation of broadband nonreciprocal thermal emitters that can find applications in new energy harvesting devices.

Andrew Butler↗

NASA NTRS1998

Modeling the Effect of Vegetation on Passive Microwave Remote Sensing of Soil Moisture

The effect of vegetation on passive microwave remote sensing of soil moisture is studied. The radiative transfer modeling work of Njoku and Kong is applied to a stratified medium of which the upper layer is treated as a layer of vegetation. An effective dielectric constant for this vegetation layer is computed using estimates of the dielectric constant of individual components of the vegetation layer. The horizontally-polarized brightness temperature is then computed as a function of the incidence angle. Model predictions are used to compare with the data obtained in the Huntsville '96, remote sensing of soil moisture experiment, and with predictions obtained using a correction procedure of Jackson and Schmugge.

Liu, Y. P.↗

NASA NTRS1989

Modeling and observation of the radar polarization signature of forested areas

To understand radar measurements of forested areas, the authors have developed a model of L-band (25-cm) microwave scattering from a forest. The forest floor is modeled as a rough dielectric surface above which is a layer of nearly vertical dielectric cylinders representing tree trunks. Above this layer is a second layer consisting of randomly oriented cylinders which represent branches. The authors identify several scattering mechanisms and calculate the corresponding Stokes matrices, which combine to give the total Stokes matrix and resulting polarization signature. It is found that this simple model permits accurate prediction of the polarization of the scattered waves and that additional mechanisms, including the effects of leaves and twigs, are not required for the 25-cm observation of the forests studied. The authors present measurements of the polarization signature acquired over a forested area and show comparisons with model calculations.

Durden, Stephen L.↗

NASA NTRS2013

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Chervenak, James↗

NASA NTRS2013

Antenna with Dielectric Having Geometric Patterns

An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

Dudley, Kenneth L.↗

NASA NTRS1997

SYNTHESIS OF NOVEL ALL-DIELECTRIC GRATING FILTERS USING GENETIC ALGORITHMS

We are concerned with the design of inhomogeneous, all dielectric (lossless) periodic structures which act as filters. Dielectric filters made as stacks of inhomogeneous gratings and layers of materials are being used in optical technology, but are not common at microwave frequencies. The problem is then finding the periodic cell's geometric configuration and permittivity values which correspond to a specified reflectivity/transmittivity response as a function of frequency/illumination angle. This type of design can be thought of as an inverse-source problem, since it entails finding a distribution of sources which produce fields (or quantities derived from them) of given characteristics. Electromagnetic sources (electric and magnetic current densities) in a volume are related to the outside fields by a well known linear integral equation. Additionally, the sources are related to the fields inside the volume by a constitutive equation, involving the material properties. Then, the relationship linking the fields outside the source region to those inside is non-linear, in terms of material properties such as permittivity, permeability and conductivity. The solution of the non-linear inverse problem is cast here as a combination of two linear steps, by explicitly introducing the electromagnetic sources in the computational volume as a set of unknowns in addition to the material unknowns. This allows to solve for material parameters and related electric fields in the source volume which are consistent with Maxwell's equations. Solutions are obtained iteratively by decoupling the two steps. First, we invert for the permittivity only in the minimization of a cost function and second, given the materials, we find the corresponding electric fields through direct solution of the integral equation in the source volume. The sources thus computed are used to generate the far fields and the synthesized triter response. The cost function is obtained by calculating the deviation between the synthesized value of reflectivity/transmittivity and the desired one. Solution geometries for the periodic cell are sought as gratings (ensembles of columns of different heights and widths), or combinations of homogeneous layers of different dielectric materials and gratings. Hence the explicit unknowns of the inversion step are the material permittivities and the relative boundaries separating homogeneous parcels of the periodic cell.

Zuffada, Cinzia↗

NASA NTRS1989

CWG: A FORTRAN program for mutual coupling in a planar array of circular waveguide-fed apertures

A FORTRAN program which calculates the mutual coupling between circular apertures in a conductive plane is documented. The program is quite general in that the apertures do not have to be the same sizes, nor do they have to be polarized in the same direction. In addition, several waveguide modes (TE and/or TM) may be specified in the apertures and the mutual coupling between all combinations of apertures and modes will be calculated. The program also allows multiple layers of homogeneous dielectrics to be placed over the aperture array. Outside the layered region, one can specify either a homogeneous half-space, or a perfect reflecting surface.

Bailey, M. C.↗

NASA NTRS2020

Genetically optimized dual-wavelength all-dielectric metasurface based on double-layer epsilon-near-zero indium-tin-oxide films

Explore the source record for details and available documents.

Raana Sabri↗

NASA NTRS2017

Transparent Conductive Ink for Additive Manufacturing

NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts. Nanotechnology is listed in NASA's Technology Roadmap as a key area to invest for further development.1 This research project focused on using nanotechnology to improve electroluminescent lighting in terms of additive manufacturing and to increase energy efficiency. Specifically, this project's goal was to produce a conductive but transparent printable ink that can be sprayed on any surface for use as one of the electrodes in electroluminescent device design. This innovative work is known as thick film dielectric electroluminescent (TDEL) technology. TDEL devices are used for "backlighting, illumination, and identification due to their tunable color output, scalability, and efficiency" (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). These devices use a 'front-to-back' printing method, where the substrate is the transparent layer, and the dielectric and phosphor are layered on top. This project is a first step in the process of creating a 3D printable 'back-to-front' electroluminescent device. Back-to-front 3D-printed devices are beneficial because they can be printed onto different substrates and embedded in different surfaces, and the substrate is not required to be transparent, all because the light is emitted from the top surface through the transparent conductor. Advances in this area will help further development of printing TDEL devices on an array of different surfaces. Figure 1 demonstrates the layering of the two electrodes that are aligned in a parallel plate capacitor structure (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). Voltage is applied across the device, and the subsequent electron excitation results in light emission at the top layer.

Patlan, X. J.↗

NASA NTRS2008

Method for implementation of back-illuminated CMOS or CCD imagers

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Pain, Bedabrata↗

NASA NTRS1977

Polyimide thin-film dielectrics on ferroelectrics

Conducting layers of multi-layered thin-film ferroelectric device, such as is used in liquid crystal/ferroelectric display, can be electrically isolated using thin-film layer of polyimide. Ease of application and high electrical-breakdown strength allow dependable and economical means of providing dielectric for other thin-film microelectronic devices.

Galiardi, R. V.↗

NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗

NASA NTRS1973

Radio interferometry depth sounding. II.

Experimental results from an analog scale model and from field tests on two glaciers using radio-frequency interferometry (RFI) are interpreted on the basis of previously described theoretical results. The RFI technique is found to be a practical method with which to study layering in low-loss dielectrics. Three parameters of the upper layer can be estimated from the data: the dielectric constant, the loss tangent, and an estimate of the thickness to a reflector. The method is an inexpensive way to sound ice sheets less than a few hundred meters thick, and could be used to study low-loss layers on the moon.

Rossiter, J. R.↗

NASA NTRS2004

A Novel, Real-Valued Genetic Algorithm for Optimizing Radar Absorbing Materials

A novel, real-valued Genetic Algorithm (GA) was designed and implemented to minimize the reflectivity and/or transmissivity of an arbitrary number of homogeneous, lossy dielectric or magnetic layers of arbitrary thickness positioned at either the center of an infinitely long rectangular waveguide, or adjacent to the perfectly conducting backplate of a semi-infinite, shorted-out rectangular waveguide. Evolutionary processes extract the optimal physioelectric constants falling within specified constraints which minimize reflection and/or transmission over the frequency band of interest. This GA extracted the unphysical dielectric and magnetic constants of three layers of fictitious material placed adjacent to the conducting backplate of a shorted-out waveguide such that the reflectivity of the configuration was 55 dB or less over the entire X-band. Examples of the optimization of realistic multi-layer absorbers are also presented. Although typical Genetic Algorithms require populations of many thousands in order to function properly and obtain correct results, verified correct results were obtained for all test cases using this GA with a population of only four.

Hall, John Michael↗

NASA NTRS2009

Multilayer Electroactive Polymer Composite Material Comprising Carbon Nanotubes

An electroactive material comprises multiple layers of electroactive composite with each layer having unique dielectric, electrical and mechanical properties that define an electromechanical operation thereof when affected by an external stimulus. For example, each layer can be (i) a 2-phase composite made from a polymer with polarizable moieties and an effective amount of carbon nanotubes incorporated in the polymer for a predetermined electromechanical operation, or (ii) a 3-phase composite having the elements of the 2-phase composite and further including a third component of micro-sized to nano-sized particles of an electroactive ceramic incorporated in the polymer matrix.

Ounaies, Zoubeida↗

NASA NTRS2011

Multilayer Electroactive Polymer Composite Material

Ounaies, Zoubeida↗

NASA NTRS2013

Integrated power passives

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Xie, Huikai↗