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At least 163 records · Page 9

Optical conductivity of overdoped cuprates from ab initio out-of-plane impurity potentials

Dopant impurity potentials determined by ab initio supercell density functional theory calculations are used to calculate the optical conductivity of overdoped La 2-x ⁢Sr x CuO 4 (LSCO) and Tl 2 ⁢Ba 2⁢ CuO 6+δ (Tl-2201) in the superconducting and normal states. Vertex corrections are included to account for the effect of forward scattering on two-particle properties. This approach was previously shown to provide good, semiquantitative agreement with measurements of superfluid density in LSCO. Here, in this study, we compare calculations of conductivity with measurements of terahertz conductivity on LSCO using identical impurity, band, and correlation parameters and find similarly good correspondence with experiment. In the process, we delineate the impact of the different disorder mechanisms on single-particle and transport relaxation processes. In particular, we reveal the critical role of apical oxygen vacancies in transport scattering and show that transport relaxation rates in LSCO are significantly reduced when apical oxygen vacancies are annealed out. These considerations are shown to be crucial for understanding the variability of experimental results for overdoped LSCO in samples of nominally identical doping but different types. Finally, we give predictions for Tl-2201 terahertz conductivity experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

Deman, H. J. J.↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination.

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

De Man, H. J. J.↗

Application of the MOS C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

An experimental and theoretical investigation of the feasibility of using the MOS C-V (capacitance-voltage) technique to determine impurity and surface state concentrations on the diffused face of Si solar cells with Ta2O5 coatings. Impurity concentration 10 A from the diffused surface is found to be 2.9 times 10 to the 20th power per cu cm. Charge density in surface and oxide states is 2.1 times 10 to the 13th power per sq cm. These data agree with theoretical predictions.-

Weinberg, I.↗

Mossbauer effect studies in iron containing nonmagnetic impurities

Mossbauer parameters of dilute quaternary (Fe-XYZ) alloys where X, Y, Z, are Al, Ge, and La, respectively were studied. A comparison between the computed and the observed values indicates that changes in effective hyperfine field, outer peak widths and the isomer shift predicted on the basis of binary alloys of the individual impurities are equal, within experimental errors, to those obtained in quaternary (Fe-XYZ) alloys. The effects of simultaneously present dilute impurities are shown to be additive, independent of their respective electronic configurations.

Singh, J. J.↗

Use of accelerated helium-3 ions for determining oxygen and carbon impurities in some pure materials

Methods are developed for the determination of O impurity in Be and Si carbide and concurrent determination of C and O impurities in Si and W by irradiation with accelerated He-3 ions and subsequent activity measurements of C-11 and F-18 formed from C and O with the aid of a gamma-gamma coincidence spectrometer. Techniques for determining O in Ge and Ga arsenide with radiochemical separation of F-18 are also described.

Aleksandrova, G. I.↗

Analysis of the Effects of Impurities in Silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. The program employed flight quality technologies and quality assurance to assure that variations in cell performance were due to the impurities incorporated in the silicon. The initial verification runs have resulted in an average AM0 cell efficiency of 12.8% at 25 C.

Wohlgemuth, J. H.↗

Effect of copper impurity on polycrystalline silicon solar cells

The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.

Daud, T.↗

Effects of impurities in coal-derived liquids on accelerated hot corrosion of superalloys

A Mach 0.3 burner rig was used to determine the effects of potential coal derived liquid fuel impurity combustion of products on hot corrosion in IN-100, IN-792, IN_738, U-700, Mar M-509, and 304 stainless steel. The impurities, added as aqueous solutions to the combustor, were salts of sodium, potassium, vanadium, molybdenum, tungsten, phosphorus, and lead. Extent of attack was determined by metal consumption and compared to the effects of sodium alone. Vanadium, molybdenum, tungsten, phosphorous, and lead in combination with sodium all resulted in increased attack as compared with sodium alone at some temperatures, apparently due in large part to the extension of the formation of liquid deposits. Varying the sodium-potassium ratio had little effect for ratios less than 1:3 for which reduced, but measurable, attack was observed.

Deadmore, D. L.↗

Dependence of growth rate of quartz in fused silica on pressure and impurity content

The effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica were measured. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cu cm/mole. The activation enthalpy for all specimens is extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C(OH) in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.

Fratello, V. J.↗

Albedo and flux extinction coefficient of impure snow for diffuse shortwave radiation

Impurities enter a snowpack as a result of fallout of scavenging by falling snow crystals. Albedo and flux extinction coefficient of soot contaminated snowcovers were studied using a two stream approximation of the radiative transfer equation. The effect of soot was calculated by two methods: independent scattering by ice grains and impurities and average refractive index for ice grains. Both methods predict a qualitatively similar effect of soot; the albedo is decreased and the extinction coefficient is increased compared to that for pure snow in the visible region; the infrared properties are largely unaffected. Quantitatively, however, the effect of soot is more pronounced in the average refractive index method. Soot contamination provides a qualitative explanation for several snow observations.

Choudhury, B. J.↗

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Hopkins, R. H.↗

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

Hopkins, R. H.↗

Eliminating Impurity Traps in the Silane Process

Redistribution reaction section of silane process progressively separates heavier parts of chlorosilane feedstock until light silane product is available for pyrolysis. Small amount of liquid containing impurities is withdrawn from processing stages in which trapping occurs and passed to earlier processing stage in which impurities tend to be removed via chemical reactions.

Coleman, L. M.↗

Precipitating Chromium Impurities in Silicon Wafers

Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

Salama, A. M.↗

The effects of impurities on the performance of silicon solar cells

The major factors that determine the tolerable concentrations of impurities in silicon feedstock for solar cells used in power generation are discussed in this report. It is concluded that a solar-grade silicon can be defined only for a specific manufacturing process. It is also concluded that it is the electrical effects, efficiency and resistivity, that are dominant in determining tolerable concentrations of impurities in the silicon feedstock. Crystal growth effects may become important when faster growth rates and larger crystal diameters are developed and used.

Yamakawa, K. A.↗